JP5539765B2 - トランジスタの作製方法 - Google Patents

トランジスタの作製方法 Download PDF

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Publication number
JP5539765B2
JP5539765B2 JP2010068657A JP2010068657A JP5539765B2 JP 5539765 B2 JP5539765 B2 JP 5539765B2 JP 2010068657 A JP2010068657 A JP 2010068657A JP 2010068657 A JP2010068657 A JP 2010068657A JP 5539765 B2 JP5539765 B2 JP 5539765B2
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JP
Japan
Prior art keywords
film
etching
semiconductor film
resist mask
layer
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Expired - Fee Related
Application number
JP2010068657A
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English (en)
Japanese (ja)
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JP2010251733A (ja
JP2010251733A5 (enExample
Inventor
秀和 宮入
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2010068657A priority Critical patent/JP5539765B2/ja
Publication of JP2010251733A publication Critical patent/JP2010251733A/ja
Publication of JP2010251733A5 publication Critical patent/JP2010251733A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2010068657A 2009-03-26 2010-03-24 トランジスタの作製方法 Expired - Fee Related JP5539765B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010068657A JP5539765B2 (ja) 2009-03-26 2010-03-24 トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009075573 2009-03-26
JP2009075573 2009-03-26
JP2010068657A JP5539765B2 (ja) 2009-03-26 2010-03-24 トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2010251733A JP2010251733A (ja) 2010-11-04
JP2010251733A5 JP2010251733A5 (enExample) 2013-03-28
JP5539765B2 true JP5539765B2 (ja) 2014-07-02

Family

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Family Applications (1)

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JP2010068657A Expired - Fee Related JP5539765B2 (ja) 2009-03-26 2010-03-24 トランジスタの作製方法

Country Status (2)

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US (1) US8372700B2 (enExample)
JP (1) JP5539765B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6033071B2 (ja) * 2011-12-23 2016-11-30 株式会社半導体エネルギー研究所 半導体装置
KR102373329B1 (ko) * 2015-04-30 2022-03-11 삼성디스플레이 주식회사 유기 발광 표시 장치
JP6353151B1 (ja) * 2017-11-15 2018-07-04 タイズ株式会社 無機ｅｌシートを具備したネームプレート
EP4517834A4 (en) * 2022-10-28 2025-10-29 Boe Technology Group Co Ltd THIN-FILM TRANSISTOR DEVICE AND ITS MANUFACTURING PROCESS, COMPOUND ETCHING SOLUTION AND MATRIX SUBSTRATE

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JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
JPS6269680A (ja) * 1985-09-24 1987-03-30 Seiko Instr & Electronics Ltd 薄膜トランジスタの製造方法
JPS6484669A (en) * 1987-09-26 1989-03-29 Casio Computer Co Ltd Thin film transistor
JPH03161938A (ja) 1989-11-20 1991-07-11 Seiko Instr Inc 薄膜トランジスタの製造方法
DE69635239T2 (de) * 1995-11-21 2006-07-06 Samsung Electronics Co., Ltd., Suwon Verfahren zur Herstellung einer Flüssigkristall-Anzeige
US6493048B1 (en) * 1998-10-21 2002-12-10 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
US6469317B1 (en) * 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
KR100325079B1 (ko) * 1999-12-22 2002-03-02 주식회사 현대 디스플레이 테크놀로지 고개구율 및 고투과율 액정표시장치의 제조방법
KR100494683B1 (ko) * 2000-05-31 2005-06-13 비오이 하이디스 테크놀로지 주식회사 4-마스크를 이용한 박막 트랜지스터 액정표시장치의제조시에 사용하는 할프톤 노광 공정용 포토 마스크
US7223643B2 (en) * 2000-08-11 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW488080B (en) * 2001-06-08 2002-05-21 Au Optronics Corp Method for producing thin film transistor
JP2003179069A (ja) * 2001-12-12 2003-06-27 Matsushita Electric Ind Co Ltd 薄膜トランジスタ、液晶表示装置、有機エレクトロルミネッセンス素子、ならびに表示装置用基板およびその製造方法
JP4152396B2 (ja) * 2005-04-04 2008-09-17 廣輝電子股▲ふん▼有限公司 薄膜トランジスタアレイの製造方法
KR101201017B1 (ko) * 2005-06-27 2012-11-13 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
KR101225440B1 (ko) * 2005-06-30 2013-01-25 엘지디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
US8149346B2 (en) * 2005-10-14 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
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EP1793266B1 (en) * 2005-12-05 2017-03-08 Semiconductor Energy Laboratory Co., Ltd. Transflective Liquid Crystal Display with a Horizontal Electric Field Configuration
JP2007227440A (ja) 2006-02-21 2007-09-06 Idemitsu Kosan Co Ltd Ｔｆｔ基板及びその製造方法
TWI322288B (en) * 2006-03-07 2010-03-21 Au Optronics Corp Manufacture method of pixel array substrate
WO2008099528A1 (ja) * 2007-02-13 2008-08-21 Sharp Kabushiki Kaisha 表示装置、表示装置の製造方法
WO2009072451A1 (en) * 2007-12-03 2009-06-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor and manufacturing method of display device
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US7883943B2 (en) * 2008-03-11 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device
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JP5503995B2 (ja) * 2009-02-13 2014-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7989234B2 (en) * 2009-02-16 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and method for manufacturing display device

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Publication number Publication date
US20100248433A1 (en) 2010-09-30
US8372700B2 (en) 2013-02-12
JP2010251733A (ja) 2010-11-04

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