JP2010251725A5 - - Google Patents

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Publication number
JP2010251725A5
JP2010251725A5 JP2010066112A JP2010066112A JP2010251725A5 JP 2010251725 A5 JP2010251725 A5 JP 2010251725A5 JP 2010066112 A JP2010066112 A JP 2010066112A JP 2010066112 A JP2010066112 A JP 2010066112A JP 2010251725 A5 JP2010251725 A5 JP 2010251725A5
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JP
Japan
Prior art keywords
crystal semiconductor
single crystal
layer
substrate
semiconductor substrate
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Application number
JP2010066112A
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English (en)
Japanese (ja)
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JP5607399B2 (ja
JP2010251725A (ja
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Priority to JP2010066112A priority Critical patent/JP5607399B2/ja
Priority claimed from JP2010066112A external-priority patent/JP5607399B2/ja
Publication of JP2010251725A publication Critical patent/JP2010251725A/ja
Publication of JP2010251725A5 publication Critical patent/JP2010251725A5/ja
Application granted granted Critical
Publication of JP5607399B2 publication Critical patent/JP5607399B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010066112A 2009-03-24 2010-03-23 Ｓｏｉ基板の作製方法 Expired - Fee Related JP5607399B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010066112A JP5607399B2 (ja) 2009-03-24 2010-03-23 Ｓｏｉ基板の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009071103 2009-03-24
JP2009071103 2009-03-24
JP2010066112A JP5607399B2 (ja) 2009-03-24 2010-03-23 Ｓｏｉ基板の作製方法

Publications (3)

Publication Number Publication Date
JP2010251725A JP2010251725A (ja) 2010-11-04
JP2010251725A5 true JP2010251725A5 (https=) 2013-04-04
JP5607399B2 JP5607399B2 (ja) 2014-10-15

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JP2010066112A Expired - Fee Related JP5607399B2 (ja) 2009-03-24 2010-03-23 Ｓｏｉ基板の作製方法

Country Status (2)

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US (1) US8048773B2 (https=)
JP (1) JP5607399B2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5819614B2 (ja) * 2011-02-02 2015-11-24 信越化学工業株式会社 Ｓｏｉウェーハの製造方法
FR2971885A1 (fr) * 2011-02-18 2012-08-24 Commissariat Energie Atomique Procédé de réalisation d'un support de substrat
EP2766656A4 (en) * 2011-10-14 2015-06-17 3M Innovative Properties Co LENS ARRANGEMENT FOR REMOTE PHOSPHORUS LED DEVICE
FR3007891B1 (fr) 2013-06-28 2016-11-25 Soitec Silicon On Insulator Procede de fabrication d'une structure composite
JP6096685B2 (ja) * 2014-01-28 2017-03-15 日本電信電話株式会社 半導体装置の製造方法
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features
CN106153178A (zh) * 2015-03-17 2016-11-23 中国科学院苏州纳米技术与纳米仿生研究所 柔性导电振膜、柔性振动传感器及其制备方法和应用
CN109770866B (zh) * 2018-12-11 2020-08-07 东北大学 一种高灵敏度电子皮肤的制备方法
PT117063B (pt) * 2021-02-15 2022-11-08 Inst Superior Tecnico Processo de produção de rolo e membrana submicrométrica de ga2o3 por implantação iónica

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575327A (en) * 1980-06-13 1982-01-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6046074B2 (ja) 1981-06-30 1985-10-14 日本電信電話株式会社 半導体結晶成長方法
JPS61260621A (ja) * 1985-05-15 1986-11-18 Matsushita Electric Ind Co Ltd 非晶質シリコンもしくは多結晶シリコンの再処理方法
JPS6276715A (ja) 1985-09-30 1987-04-08 Sony Corp 単結晶シリコン薄膜の形成方法
JP2743370B2 (ja) 1988-03-30 1998-04-22 日産自動車株式会社 多結晶膜の形成方法
JP2737152B2 (ja) 1988-05-17 1998-04-08 セイコーエプソン株式会社 Ｓｏｉ形成方法
JPH038797A (ja) 1989-03-24 1991-01-16 Hajime Ihara ダイヤモンドの加圧気相合成法
JP2766315B2 (ja) 1989-06-08 1998-06-18 キヤノン株式会社 半導体の製造法
JPH0395922A (ja) * 1989-09-07 1991-04-22 Canon Inc 半導体薄膜の形成方法
EP0747935B1 (en) * 1990-08-03 2004-02-04 Canon Kabushiki Kaisha Process for preparing an SOI-member
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JPH08250421A (ja) 1995-03-10 1996-09-27 Canon Inc 半導体基板の製造方法および半導体基板
JP3675886B2 (ja) * 1995-03-17 2005-07-27 株式会社半導体エネルギー研究所 薄膜半導体デバイスの作製方法
US6191007B1 (en) * 1997-04-28 2001-02-20 Denso Corporation Method for manufacturing a semiconductor substrate
US6251754B1 (en) * 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method
US6159824A (en) * 1997-05-12 2000-12-12 Silicon Genesis Corporation Silicon-on-silicon wafer bonding process using a thin film blister-separation method
JPH1145862A (ja) 1997-07-24 1999-02-16 Denso Corp 半導体基板の製造方法
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2000124092A (ja) * 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
WO2001006546A2 (en) * 1999-07-16 2001-01-25 Massachusetts Institute Of Technology Silicon on iii-v semiconductor bonding for monolithic optoelectronic integration
EP1939932A1 (en) * 1999-08-10 2008-07-02 Silicon Genesis Corporation A substrate comprising a stressed silicon germanium cleave layer
JP2003124230A (ja) 2001-10-12 2003-04-25 Hitachi Ltd 薄膜トランジスタ装置、その製造方法及びこの装置を用いた画像表示装置
JP4103447B2 (ja) * 2002-04-30 2008-06-18 株式会社Ｉｈｉ 大面積単結晶シリコン基板の製造方法
US7399681B2 (en) * 2003-02-18 2008-07-15 Corning Incorporated Glass-based SOI structures
KR100578787B1 (ko) * 2004-06-12 2006-05-11 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP2006270775A (ja) * 2005-03-25 2006-10-05 Matsushita Electric Works Ltd インターホンシステム
EP1835533B1 (en) * 2006-03-14 2020-06-03 Soitec Method for manufacturing compound material wafers and method for recycling a used donor substrate
EP1975998A3 (en) * 2007-03-26 2013-12-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a plurality of island-shaped SOI structures
CN102623400B (zh) * 2007-04-13 2015-05-20 株式会社半导体能源研究所 显示器件、用于制造显示器件的方法、以及soi衬底
KR101443580B1 (ko) * 2007-05-11 2014-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Soi구조를 갖는 기판
EP2174343A1 (en) * 2007-06-28 2010-04-14 Semiconductor Energy Laboratory Co, Ltd. Manufacturing method of semiconductor device
US7795114B2 (en) * 2007-08-10 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of SOI substrate and semiconductor device
US7781308B2 (en) * 2007-12-03 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
FR2942674B1 (fr) * 2009-02-27 2011-12-16 Commissariat Energie Atomique Procede d'elaboration d'un substrat hybride par recristallisation partielle d'une couche mixte

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