JP2010251725A5 - - Google Patents

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Publication number
JP2010251725A5
JP2010251725A5 JP2010066112A JP2010066112A JP2010251725A5 JP 2010251725 A5 JP2010251725 A5 JP 2010251725A5 JP 2010066112 A JP2010066112 A JP 2010066112A JP 2010066112 A JP2010066112 A JP 2010066112A JP 2010251725 A5 JP2010251725 A5 JP 2010251725A5
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JP
Japan
Prior art keywords
crystal semiconductor
single crystal
layer
substrate
semiconductor substrate
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Application number
JP2010066112A
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English (en)
Japanese (ja)
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JP5607399B2 (ja
JP2010251725A (ja
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Priority to JP2010066112A priority Critical patent/JP5607399B2/ja
Priority claimed from JP2010066112A external-priority patent/JP5607399B2/ja
Publication of JP2010251725A publication Critical patent/JP2010251725A/ja
Publication of JP2010251725A5 publication Critical patent/JP2010251725A5/ja
Application granted granted Critical
Publication of JP5607399B2 publication Critical patent/JP5607399B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010066112A 2009-03-24 2010-03-23 Ｓｏｉ基板の作製方法 Expired - Fee Related JP5607399B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010066112A JP5607399B2 (ja) 2009-03-24 2010-03-23 Ｓｏｉ基板の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009071103 2009-03-24
JP2009071103 2009-03-24
JP2010066112A JP5607399B2 (ja) 2009-03-24 2010-03-23 Ｓｏｉ基板の作製方法

Publications (3)

Publication Number Publication Date
JP2010251725A JP2010251725A (ja) 2010-11-04
JP2010251725A5 true JP2010251725A5 (OSRAM) 2013-04-04
JP5607399B2 JP5607399B2 (ja) 2014-10-15

Family

ID=42784784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010066112A Expired - Fee Related JP5607399B2 (ja) 2009-03-24 2010-03-23 Ｓｏｉ基板の作製方法

Country Status (2)

Country Link
US (1) US8048773B2 (OSRAM)
JP (1) JP5607399B2 (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5819614B2 (ja) * 2011-02-02 2015-11-24 信越化学工業株式会社 Ｓｏｉウェーハの製造方法
FR2971885A1 (fr) * 2011-02-18 2012-08-24 Commissariat Energie Atomique Procédé de réalisation d'un support de substrat
IN2014CN02633A (OSRAM) * 2011-10-14 2015-06-26 3M Innovative Properties Co
FR3007891B1 (fr) * 2013-06-28 2016-11-25 Soitec Silicon On Insulator Procede de fabrication d'une structure composite
JP6096685B2 (ja) * 2014-01-28 2017-03-15 日本電信電話株式会社 半導体装置の製造方法
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features
CN106153178A (zh) * 2015-03-17 2016-11-23 中国科学院苏州纳米技术与纳米仿生研究所 柔性导电振膜、柔性振动传感器及其制备方法和应用
CN109770866B (zh) * 2018-12-11 2020-08-07 东北大学 一种高灵敏度电子皮肤的制备方法

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JPS61260621A (ja) * 1985-05-15 1986-11-18 Matsushita Electric Ind Co Ltd 非晶質シリコンもしくは多結晶シリコンの再処理方法
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JPH0395922A (ja) 1989-09-07 1991-04-22 Canon Inc 半導体薄膜の形成方法
CA2048339C (en) 1990-08-03 1997-11-25 Takao Yonehara Semiconductor member and process for preparing semiconductor member
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WO2009001836A1 (en) * 2007-06-28 2008-12-31 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7795114B2 (en) 2007-08-10 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing methods of SOI substrate and semiconductor device
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FR2942674B1 (fr) * 2009-02-27 2011-12-16 Commissariat Energie Atomique Procede d'elaboration d'un substrat hybride par recristallisation partielle d'une couche mixte

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