JP2010251441A - Led module for illumination - Google Patents

Led module for illumination Download PDF

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Publication number
JP2010251441A
JP2010251441A JP2009097739A JP2009097739A JP2010251441A JP 2010251441 A JP2010251441 A JP 2010251441A JP 2009097739 A JP2009097739 A JP 2009097739A JP 2009097739 A JP2009097739 A JP 2009097739A JP 2010251441 A JP2010251441 A JP 2010251441A
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Prior art keywords
substrate
emitting diode
insulating layer
light emitting
led module
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JP2009097739A
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JP5330889B2 (en
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Kenji Miyagawa
健志 宮川
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Denki Kagaku Kogyo Kk
電気化学工業株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

An object of the present invention is to provide a module substrate having excellent heat dissipation characteristics and an illumination LED module capable of suppressing a temperature drop even when a plurality of light emitting diode elements are arranged at a high density due to the structure.
In the present invention, an LED module for illumination is formed of a module substrate 4, a light emitting diode element 5, and a phosphor. The module substrate 4 includes a substrate 1, an insulating layer 2 having a thermal conductivity of 1 W / mK or more stacked on the substrate 1, and a conductive layer 3 stacked on the insulating layer 2 while having a conductive pattern. . The light emitting diode element 5 is attached on the conductive layer 3 of the module substrate 4. The phosphor is disposed on the light irradiation side of the light emitting diode element 5.
[Selection] Figure 1

Description

  The present invention relates to an illumination LED (Light Emitting Diode) module including a module substrate and a plurality of light emitting diode elements provided at predetermined positions of the module substrate.

There is a light emitting diode as a new illumination light source of a lighting fixture. Since a light-emitting diode chip has a small luminous flux with a single light-emitting diode chip element, in order to obtain a luminous flux equivalent to that of an incandescent bulb or a fluorescent lamp, a plurality of light-emitting diode elements are arranged to constitute an illumination light source ( Patent Documents 1 and 2).

When a plurality of light emitting diode elements are arranged, the light emitting diode elements having a low energy conversion efficiency and a large amount of heat generation generate heat. The lifetime of the element is reduced.

Japanese Patent No. 3998794 Japanese Patent No. 4124638

An object of the present invention is to provide an illumination LED module capable of suppressing a temperature rise even when a plurality of light emitting diode elements are arranged at a high density.

The present invention relates to a substrate, an insulating layer having a thermal conductivity of 1 W / mK or more laminated on the substrate, a module substrate having a conductive layer laminated with a conductive pattern on the insulating layer, and a module substrate The LED module for illumination which has the some light emitting diode element attached on the conductive layer of this, and the fluorescent substance arrange | positioned at the light irradiation side of the light emitting diode element.

Another invention is a module substrate having a substrate, an insulating layer having a thermal conductivity of 1 W / mK or more intermittently stacked on the substrate, and a conductive layer stacked with a conductive pattern on the insulating layer And an LED module for illumination having a plurality of light emitting diode elements mounted on a substrate of the module substrate on which an insulating layer is not laminated, and a phosphor disposed on the light irradiation side of the light emitting diode elements.

Another invention is a substrate, an insulating layer having a thermal conductivity of 1 W / mK or more intermittently stacked on the substrate, a conductive layer stacked with a conductive pattern on the insulating layer, An LED module for illumination having a module substrate having conductive columns provided in intermittent portions of the insulating layer, a light emitting diode element mounted on the column, and a phosphor disposed on the light irradiation side of the light emitting diode element. is there.

The substrate is preferably selected from the group consisting of copper, aluminum, or an alloy containing these as a main component, and more preferably an aluminum alloy-graphite composite or an aluminum alloy-graphite-silicon carbide composite. Is preferably selected from the group consisting of

It is preferable that at least one white pigment selected from zinc oxide, calcium carbonate, titanium dioxide, alumina, and smectite is added to the insulating layer. Moreover, it is preferable to form a solder resist film on the surface of the module substrate.

The phosphor is represented by the general formula: (M) x (Eu) y (Si, Al) 12 (O, N) 16 (where M is Li, Mg, Ca, Y and lanthanide elements (excluding La and Ce)) Α-sialon selected from the group consisting of one or more elements containing at least Ca), the oxygen content is 1.2 mass% or less, and the primary particles constituting the α-sialon are columnar α It is preferable that it is a type sialon phosphor. Another preferred phosphor is a phosphor represented by the general formula: Si 6-z Al z O z N 8-z , which is mainly composed of β-sialon containing Eu, and is measured by electron spin resonance spectrum. The phosphor has a spin density of 2.0 × 10 17 pieces / g or less corresponding to the absorption of g = 2.00 ± 0.02 at 25 ° C. in FIG.

  According to the present invention, the above configuration can suppress the temperature rise even when a plurality of light emitting diode elements are arranged at high density.

FIG. 3 is a schematic diagram illustrating a cross section of the illumination LED module according to the first embodiment. FIG. 3 is a schematic diagram illustrating a plan view of the LED module for illumination according to the first embodiment. FIG. 5 is a schematic diagram showing a cross section of an illumination LED module according to Example 2. FIG. 6 is a schematic diagram showing a cross section of an illumination LED module according to Example 3. The schematic diagram of the One-Wire type light emitting diode element used for this invention. The schematic diagram of the Double-Wire type light emitting diode element used for this invention. The schematic diagram of the Face down type light emitting diode element used for this invention.

DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Insulation layer 3 Conductive layer 4 Module board | substrate 5 Light emitting diode element 6 Wire bonding 7 Sealing material 8 Dam material 9 Support | pillar 10 Light emitter 12 Element board 13 Solder 14 Thermal conductive adhesive 15 Bump

<Structure of module board>
As shown in FIGS. 1 and 2, the lighting LED module according to the present invention includes a substrate 1, an insulating layer 2 having a thermal conductivity of 1 W / mK or more laminated on the substrate 1, and an insulating layer 2. A module substrate 4 having a conductive layer 3 laminated with a conductive pattern on the substrate;
A plurality of light emitting diode elements 5 mounted on the conductive layer 3 of the module substrate 4;
This is an illumination LED module having a phosphor (not shown, the same applies hereinafter) disposed on the light irradiation side of the light emitting diode element 5.

As shown in FIG. 3, another invention has a substrate 1, an insulating layer 2 having a thermal conductivity of 1 W / mK or more laminated intermittently on the substrate 1, and a conductive pattern on the insulating layer 2. However, the module substrate 4 having the conductive layer 3 stacked while being laminated;
A plurality of light emitting diode elements 5 attached on the substrate 1 of the module substrate 4 on which the insulating layer 2 is not laminated;
This is an illumination LED module having a phosphor disposed on the light irradiation side of the light emitting diode element 5.

By disposing the light-emitting diode element 5 on the surface of the substrate 1 where the insulating layers 2 are intermittently laminated and are not laminated, heat dissipation can be further improved. Means for intermittently laminating the insulating layer 2 includes means for intermittently laminating the insulating layer 2 and means for removing the insulating layer 2 by chemical polishing, physical polishing, laser processing, or the like after the insulating layer 2 is formed.

As shown in FIG. 4, another invention has a substrate 1, an insulating layer 2 having a thermal conductivity of 1 W / mK or more intermittently stacked on the substrate 1, and a conductive pattern on the insulating layer 2. However, the module substrate 4 having the conductive layers 3 stacked while the conductive pillars 9 are provided at intermittent points of the insulating layer 2;
A light-emitting diode element 5 mounted on the column 9;
This is an illumination LED module having a phosphor disposed on the light irradiation side of the light emitting diode element 5.

With this configuration, the column 9 transmits heat generated by the light-emitting diode element 5 to the substrate 1, so that high heat dissipation can be obtained. As a means for forming the support column 9, there are a means for forming the support 9 as a separate body after the formation of the substrate 1 and a means for providing a protrusion in advance when forming the substrate 1 to form a support.

The substrate 1 is preferably selected from the group consisting of copper, aluminum, or an alloy containing these as a main component, and more preferably an aluminum alloy-graphite composite or an aluminum alloy-graphite-silicon carbide composite. It is preferably selected from the group consisting of

It is preferable that at least one white pigment selected from zinc oxide, calcium carbonate, titanium dioxide, alumina, and smectite is added to the insulating layer.

The phosphor is represented by the general formula: (M) x (Eu) y (Si, Al) 12 (O, N) 16 (where M is Li, Mg, Ca, Y and lanthanide elements (excluding La and Ce)) Α-sialon selected from the group consisting of one or more elements containing at least Ca), the oxygen content is 1.2 mass% or less, and the primary particles constituting the α-sialon are columnar α It is preferable that it is a type sialon phosphor. Another preferred phosphor is a phosphor represented by the general formula: Si 6-z Al z O z N 8-z , which is mainly composed of β-sialon containing Eu, and is measured by electron spin resonance spectrum. The phosphor has a spin density of 2.0 × 10 17 pieces / g or less corresponding to the absorption of g = 2.00 ± 0.02 at 25 ° C. in FIG.

<Insulating layer>
The insulating layer of the present invention needs to have a thermal conductivity of 1 W / mK or more in order to efficiently dissipate heat generated from the light emitting diode element to the back side of the module substrate, and a preferable thermal conductivity is 1.5 W / mK or more. More preferably, it is 2 W / mK or more. The heat generated in the light emitting diode element is dissipated to the back side of the substrate 1 and further dissipated to the outside, thereby reducing the heat storage of the LED module, suppressing the temperature rise of the light emitting diode element, and suppressing the decrease in the light emitting efficiency of the light emitting diode element did it. The withstand voltage between the conductive layer and the substrate is 0.5 kV or more, preferably 1 kV or more.

The material constituting the insulating layer can be appropriately selected as long as the material has this thermal conductivity, specifically, there are phenol resin, imide resin, silicone resin, epoxy resin, etc., more specifically, epoxy resin, What contains the hardening | curing agent for epoxy resins and the inorganic filler is preferable.

<Epoxy resin as insulating layer>
Examples of the epoxy resin include known epoxy resins such as naphthalene type, phenylmethane type, tetrakisphenolmethane type, biphenyl type and bisphenol A alkylene oxide adduct type epoxy resins. Among these, an epoxy resin having a main chain having a polyether skeleton and a straight chain is preferable because of stress relaxation. The epoxy resin whose main chain has a polyether skeleton and has a main chain shape includes bisphenol A type, bisphenol F type epoxy resin, bisphenol A type hydrogenated epoxy resin, polypropylene glycol type epoxy resin, polytetramethylene glycol type epoxy. There are aliphatic epoxy resins typified by resins and polysulfide-modified epoxy resins, and a plurality of these may be used in combination.

When higher heat resistance is required, it is preferable to use a bisphenol A type epoxy resin alone or in combination with another epoxy resin as an epoxy resin.

<Bisphenol A type epoxy resin>
When a bisphenol A type epoxy resin is employed, the epoxy equivalent is preferably 300 or less. When the epoxy equivalent is too large, there is a tendency to cause a decrease in Tg and a decrease in heat resistance due to a decrease in crosslink density seen when a polymer type is obtained.

<Curing agent for epoxy resin>
It is preferable to add a curing agent to the epoxy resin. As the curing agent, one or more selected from the group consisting of aromatic amine resins, acid anhydride resins, phenol resins and dicyanamide can be used. About the addition amount of a hardening | curing agent, it is preferable that it is 5-50 mass parts with respect to 100 mass parts of epoxy resins, and it is still more preferable that it is 10-35 mass parts.

<Curing catalyst for epoxy resin>
A curing catalyst can be used for the epoxy resin as necessary. As a curing catalyst, there are an imidazole compound, an organic phosphate compound, a tertiary amine, and a quaternary ammonium, and there is any one kind or a mixture thereof. The addition amount is not particularly limited because it varies depending on the curing temperature, but if it is too small, the compounding effect of the curing catalyst does not appear, and if it is too large, it becomes difficult to control the degree of curing in the circuit board manufacturing process. It is preferable that it is 0.01 mass part or more and 5 mass parts or less with respect to a part.

<Filler for epoxy resin>
The inorganic filler for epoxy resin is not particularly limited as long as it is electrically insulating and excellent in thermal conductivity. Examples thereof include silicon oxide, aluminum oxide, aluminum nitride, boron nitride, magnesium oxide, and silicon nitride.

As the filler for epoxy resin, aluminum nitride and boron nitride are preferable in order to achieve high thermal conductivity. Crystalline silicon dioxide and boron nitride are preferred when the present invention is used as an electric / electronic component used at high frequencies and the dielectric constant needs to be kept low.

The particle shape of the filler for epoxy resin preferably has an aspect ratio close to 1 in order to improve handling properties and fluidity. When coarse particles and fine particles are mixed together, it is possible to achieve a higher packing than when crushed particles or spherical particles are used alone, which is more preferable.

When mixing and using coarse particles and fine particles as the inorganic filler, (a) 50% by volume or more of those having a maximum particle size of 100 μm or less and a particle size of 1 to 12 μm and an average particle size of 5 to 50 μm Mixed powder of (a) and (b) comprising coarse particles and (b) fine particles having a particle size of 2.0 μm or less and 70% by volume or more and an average particle size of 0.2 to 1.5 μm Is preferably used. The ratio of coarse particles to fine particles is preferably 34 to 70% by volume of coarse particles and 3 to 24% by volume of fine particles. In the case where coarse particles and fine particles are used in combination, at least one of them is more preferably spherical.

70-95 mass parts is preferable with respect to 100 mass parts of total amounts of an epoxy resin and a hardening | curing agent, and, as for the mixture ratio of an inorganic filler, 80-90 mass parts is still more preferable.

<White pigment in insulating layer>
It is preferable to add at least one white pigment selected from zinc oxide, calcium carbonate, titanium dioxide, alumina, and smectite to the insulating layer of the present invention. By including a white pigment in the insulating layer, the reflectance of the insulating layer is improved, and the light from the light emitting diode element can be efficiently irradiated on the front surface. Among the white pigments, titanium dioxide is preferable when the refractive index and the substrate reflectivity are to be increased. In the filler, it is preferable to limit the average particle diameter of the white pigment to 0.30 μm or less so as not to scatter light.

Of the white pigments, zinc oxide is preferred when it has both a high refractive index and high heat dissipation. Moreover, in order not to scatter light in the filler, it is preferable that an average particle diameter is 0.35 micrometer or less.

When a white pigment is added to the insulating layer, the addition amount is preferably 5 to 50% by volume, more preferably 5 to 30% by volume with respect to the entire insulating layer. This is because if the amount is too small, a sufficient effect of improving the reflectance cannot be obtained, and if the amount is too large, sufficient dispersion cannot be achieved and aggregates or the like are formed.

In order to increase the reflectance and insulation reliability of the insulating layer, it is preferable that the insulating layer has two layers. In the case of two layers, it is preferable to have a functional separation structure in which an inner layer is a highly insulating insulating layer and an outer layer is a highly reflective insulating layer.

<Auxiliary>
It is possible to add known auxiliary agents such as a dispersion aid such as a coupling agent and a viscosity adjusting aid such as a solvent to the insulating layer as necessary.

<Board>
The substrate of the present invention may be any one selected from the group consisting of aluminum, iron, copper, or an alloy of the above metals, an aluminum-graphite composite, an aluminum alloy-graphite-silicon carbide composite, aluminum, Copper, or an alloy thereof, an aluminum alloy-graphite composite, or an aluminum alloy-graphite-silicon carbide composite is preferable. Further, if necessary, surface treatment such as sandblasting, etching, various plating treatments, coupling agent treatment, etc. can be appropriately selected on the adhesion surface side with the insulation layer in order to improve adhesion with the insulation layer. .

<Aluminum alloy-graphite composite>
The aluminum alloy-graphite composite is obtained by press-impregnating an isotropic graphite material using coke graphite as a raw material with an aluminum alloy by a melt forging method. The Caustic graphite has a thermal conductivity of 100 to 200 W / mK at a temperature of 25 ° C., and a maximum / minimum value of the thermal conductivity in three orthogonal directions is 1 to 1.3, The thermal expansion coefficient at a temperature of 25 ° C. to 150 ° C. is 2 to 5 × 10 −6 / K, and the maximum / minimum value of the thermal expansion coefficients in three orthogonal directions is 1 to 1.3, and the porosity is It is preferable that it is 10-20 volume%. The aluminum alloy preferably contains 3 to 25% by mass of silicon.

The thermal conductivity in the thickness direction of the aluminum alloy-graphite composite is preferably 150 to 300 W / mK, and the maximum / minimum value of the thermal conductivity in three orthogonal directions is 1 to 1.3. It is preferable. If the thermal conductivity is too low, the heat dissipation characteristics are insufficient, and if it is too large, there are no restrictions on the characteristics, but the material itself becomes expensive and the anisotropy of the characteristics becomes strong, which is not preferable. In addition, if the maximum value / minimum value of the thermal conductivity in the three orthogonal directions is too large, the anisotropy of the heat dissipation characteristic becomes too large, and there is a problem that the temperature of the light emitting diode element rises, which is not preferable.

The aluminum alloy-graphite composite has a thermal expansion coefficient of 4 to 7.5 × 10 −6 / K at a temperature of 25 ° C. to 150 ° C., and the maximum value / minimum value of the thermal expansion coefficients in three orthogonal directions. Is preferably 1 to 1.3. Even if the thermal expansion coefficient at a temperature of 25 ° C. to 150 ° C. is too small or too large, the difference in thermal expansion coefficient between the aluminum alloy-graphite composite and the light-emitting diode element becomes too large, and the life is shortened due to deterioration of the connection portion. Such a problem occurs, which is not preferable. Furthermore, if the maximum value / minimum value of the thermal expansion coefficient in the three directions orthogonal to each other at a temperature of 25 ° C. to 150 ° C. is too large, the anisotropy of the thermal expansion coefficient of the aluminum alloy-graphite composite becomes too large, resulting in light emission. This is not preferable because non-uniform stress is applied to the element during light emission of the diode element, causing problems such as a reduction in life.

<Aluminum alloy-graphite-silicon carbide composite>
The aluminum alloy-graphite-silicon carbide composite is a high-pressure forging method that forms a molded body composed of 60 to 90% by volume of graphite powder and 10 to 40% by volume of silicon carbide powder with a porosity of 10 to 30% by volume. The alloy is pressure impregnated. An aluminum alloy containing 3 to 25% by mass of silicon can be suitably used.

The thermal conductivity in the thickness direction of the aluminum alloy-graphite-silicon carbide composite is preferably 200 W / (m · K) or more, more preferably 250 W / (m · K) or more. If the thermal conductivity is too low, the heat dissipation characteristics are insufficient, and if it is too high, there are no restrictions on the characteristics, but the material itself is expensive, which is not preferable.

The aluminum alloy-graphite-silicon carbide composite preferably has a thermal expansion coefficient of 12 × 10 −6 / K or less at a temperature of 25 ° C. to 150 ° C. If the thermal expansion coefficient is too large, the difference between the thermal expansion coefficients of the light-emitting diode elements becomes too large, which causes problems such as a decrease in life due to deterioration of the connection portion, which is not preferable.

<Thickness of substrate>
The thickness of the substrate is preferably from 0.10 mm to 4 mm. If the substrate is too thin, the handling property is lowered. If the substrate is too thick, there is no technical limitation, but an application as an LED module for lighting cannot be found and it is not practical.

<Conductive layer>
As the conductive layer, aluminum, iron, copper, or an alloy of these metals can be selected, and copper or an alloy thereof is preferable in terms of electrical characteristics. Sandblasting is also used on the mounting surface of the light-emitting diode element to improve the bonding property when the light-emitting diode element is mounted and to prevent oxidation of the surface, and to improve the adhesion to the insulating layer on the bonding surface side with the insulating layer. Surface treatments such as etching, various plating treatments, and coupling agent treatments can also be selected as appropriate.

<Circuit thickness>
The thickness of the conductive layer is preferably 0.005 mm to 0.400 mm, more preferably 0.018 mm to 0.210 mm. If it is less than 0.005 mm, a sufficient conduction circuit as an LED module substrate cannot be secured, and if it exceeds 0.40 mm, there is a problem in the manufacturing process of circuit formation.

<Insulating layer>
In the present invention, the thickness of the insulating layer is preferably 50 μm or more and 200 μm or less. If it is 50 μm or more, electrical insulation can be secured, and if it is 200 μm or less, heat dissipation can be sufficiently achieved, and it can contribute to miniaturization and thickness reduction.

<Light emitting diode element>
In the present invention, a plurality of light emitting diode elements are attached on the conductive layer of the module substrate. A light emitting diode element that emits light in the ultraviolet to blue wavelength region is preferable, and the materials include InGaN, AlGaAs, and AlGaInP. As for the structure, one-wire type (see FIG. 5), double-wire type (see FIG. 6), face down type (see FIG. 7), or the like can be used.

As for the structure of the light emitting diode element, in the case of the configuration shown in FIG. 3 or FIG. 4, it is necessary to use a double-wire type having an insulating layer such as sapphire on the joint surface with the module substrate of the light emitting diode element. In the case of the configuration shown in FIG. 1, a double-wire type, a one-wire type, and a face down type can be used.

<Light-emitting diode element mounting>
For mounting the light-emitting diode element on the module substrate, a known method such as solder mounting using cream solder, eutectic solder, lead-free solder or the like, wire bonding using Ag wire, or Au wire can be used.

<Phosphor>
The phosphor of the present invention (not shown) is disposed on the light irradiation side of the light emitting diode element, and by this arrangement, receives light from the light emitting diode element and emits visible light. As the phosphor, it is sufficient to include at least one of α-type sialon, β-type sialon, YAG phosphor, cozun phosphor (CaAlSiN 3 ), and the like can be used together. Type sialon is preferred.

<Α-type sialon>
In the present invention, when an α-type sialon phosphor is employed as the phosphor, a general formula: (M) x (Eu) y (Si, Al) 12 (O, N) 16 (where M is Li , Mg, Ca, Y and a lanthanide element (excluding La and Ce) and an α-type sialon represented by at least one element containing Ca selected from the group consisting of La and Ce, and an oxygen content of 1.2 mass% or less The α-sialon phosphor is preferably an α-sialon phosphor in which the primary particles constituting the α-sialon are columnar.

When the α-sialon phosphor is employed, it is more preferable that the particle size distribution is high when D50 is 5 to 20 μm, D10 is 2 to 15 μm, and D90 is 6 to 50 μm as measured by the laser diffraction scattering method. Brightness can be achieved.

<Β-sialon>
In the present invention, when a β-type sialon phosphor is employed as the phosphor, a β-sialon represented by the general formula: Si 6-z Al z O z N 8-z and containing Eu is the main component. And a spin density corresponding to absorption of g = 2.00 ± 0.02 at 25 ° C. measured by electron spin resonance spectrum is 2.0 × 10 17 pieces / g or less. preferable.

When adopting the β-type sialon phosphor, more preferably, the particle size distribution of D50 measured by a laser diffraction scattering method is 6 to 30 μm, D10 is 4 μm or more, and the specific surface area is 0.5 m 2. If the range is less than / g, high brightness can be achieved.

<Encapsulant for phosphor>
The phosphor is preferably dispersed in a sealing material for protecting the light emitting diode element in the range of 1 to 50% by mass and disposed on the light emitting diode chip. Examples of the sealing material include silicone resins, epoxy resins, polydimethylsiloxane derivatives having epoxy groups, oxetane resins, acrylic resins, and thermosetting resins such as cycloolefin resins. In the present invention, high refractive index and high heat resistance are provided. A silicone resin is more preferable because it is necessary.

<Solder resist film>
The surface of the module substrate of the present invention can be provided with a solder resist film. By forming a film having a high reflectance in the visible light wavelength region as the solder resist film, light from the light emitting diode element is efficiently irradiated to the front surface. Can be made. Since the solder resist film does not hinder the light emission of the light emitting diode element, it is preferable that the solder resist film is not laminated on the light emitting part, the wiring part or the like of the light emitting diode element.

The reflectance of the solder resist film preferably has a reflectance of 70% or more with respect to light having a wavelength of 400 to 800 nm, more preferably 450 to 470 nm, 520 to 570 nm, and 620 to 660 nm. The maximum reflectance is preferably 80% or more, and more preferably 85% or more.

The solder resist film contains a white pigment in a resin composition containing at least one of an ultraviolet curable resin and a thermosetting resin used as a resist material. As these curable resins, epoxy resins, acrylic resins and mixtures thereof are preferably used. The white pigment preferably contains at least one selected from zinc oxide, calcium carbonate, titanium dioxide, alumina, and smectite. Among these, titanium dioxide is particularly preferable. Among titanium dioxides, rutile type is excellent in stability and thus has a weak photocatalytic action, and can be suitably used because deterioration of the resin component is suppressed as compared with other structures. Further, various surface treatments of titanium dioxide to suppress the photocatalytic action are preferable, and the surface treatment method includes coating with silicon dioxide or aluminum hydroxide.

If the content of the white pigment in the white film is too small, a sufficient reflection effect cannot be obtained, and if it is too large, the fluidity at the time of film formation is lowered and a uniform film cannot be formed, so 30 to 70 volumes. % Is preferable, and more preferably 30 to 60% by volume.

<Reflector>
A reflector is preferably formed on the module substrate of the present invention in order to efficiently irradiate the front surface with light from the light emitting diode element. The shape and material of the reflector can be appropriately selected and employed. In addition to using a separate reflector, the counterbore shape of the light emitting diode element mounting portion is conical when using the configuration shown in FIG. The insulating layer itself can also be made a reflector by forming a shape or a dome shape.

  Next, based on an Example, this invention is demonstrated further in detail, referring a figure.

<Example 1>
As shown in FIGS. 1 and 2, the lighting LED module of Example 1 includes a module substrate 4, a plurality of light emitting diode elements 5 attached on the conductive layer 3 of the module substrate 4, and a light emitting diode element 5. It has a phosphor (not shown) disposed on the light irradiation side. The module substrate 4 includes a substrate 1, an insulating layer 2 having a thermal conductivity of 1 W / mK or more stacked on the substrate 1, and a conductive layer 3 stacked on the insulating layer 2 while having a conductive pattern. Is. Reference numeral 6 in FIG. 1 is wiring, 7 is a sealing material, and 8 is a dam material. Reference numeral 16 in FIG. 2 denotes a wiring portion.

The substrate 1 was 1.0 mm thick aluminum, and the conductive layer 3 was 35 μm thick copper.
Insulating layer 2 is obtained by adding phenol novolak (manufactured by Dainippon Ink & Chemicals, "TD-2131") as a curing agent to bisphenol A type epoxy resin ("EP-828" manufactured by Japan Epoxy Resin Co., Ltd.) Crushed coarse silicon oxide having a diameter of 1.2 μm (manufactured by Tatsumori Co., Ltd., “A-1”) and crushed coarse silicon oxide having an average particle diameter of 10 μm (manufactured by Tatsumori Co., Ltd., “5X”) Are combined so that the volume of the insulating layer is 56% by volume (mass ratio of spherical coarse particles and spherical fine particles is 7: 3). The thermal conductivity of the insulating layer was 2 W / mK.

The insulating layer 2 was laminated on the substrate 1 so as to have a thickness of 80 μm, the conductive layer 3 was laminated, and a circuit (not shown) was formed on the conductive layer 3 by chemical etching to obtain a module substrate 4. .

On the module substrate 4, 36 one-wire type light emitting diode elements (partially omitted in the drawing) with an output of 1.5 W were mounted by wire bonding 6 using cream solder and gold wire.

Further, although not shown, the α-sialon phosphor was sealed with a sealing material in which 20% by mass was dispersed in a silicone-based sealing material (Toray Dow Corning JCR6125). Then, the dam material 8 was provided, the sealing material 7 was filled in the dam material 8, and the LED module for illumination which concerns on a present Example was completed.

As an evaluation, an illumination LED module was prepared by removing the sealing material 7 near the center of the illumination LED module of Example 1, a voltage was applied to the light emitting diode element, and the temperature of the upper surface of the light emitting diode element was measured by thermography. However, the temperature of the light emitting diode element was 95 ° C.

<Comparative Example 1>
As the insulating layer, a bisphenol A type epoxy resin (manufactured by Japan Epoxy Resin, “EP-828”) and a phenol novolak (manufactured by Dainippon Ink & Chemicals, “TD-2131”) as a curing agent were used. Except for this, the procedure was the same as in Example 1. The thermal conductivity of the insulating layer was 0.2 W / mK. A module in which the sealing material 7 near the center of the module was removed in the same manner as in Example 1 and a voltage was applied to the light emitting diode element to obtain a predetermined output. The temperature of the light emitting diode element was 145 ° C.

<Comparative example 2>
Example 1 was performed except that glass having a thickness of 1.0 mm was used as the substrate 1. A module was prepared by removing the sealing material 7 near the center of the module in the same manner as in Example 1, and when a voltage was applied to the light-emitting diode element to obtain a predetermined output, the temperature of the light-emitting diode element was 150 ° C. or higher in 15 minutes. It became.

<Example 2>
Example 1 was repeated except that an aluminum alloy-graphite-silicon carbide composite was used as the substrate 1. The temperature of the light-emitting diode element 5 was 90 ° C.

<Example 3>
The structure of the LED module for illumination is shown in FIG. 3, and an intermittent portion is formed in the insulating layer 2 by a carbon dioxide laser, and the light emitting diode element 5 is the same as in Example 1 except that a two-wire type with an output of 1.5 W is used. did. The temperature of the light-emitting diode element 5 was 67 ° C.

<Example 4>
The same procedure as in Example 3 was performed except that an aluminum alloy-graphite-silicon carbide composite was used as the substrate 1. The temperature of the photodiode element was 67 ° C.

<Comparative Example 3>
Example 3 was performed except that glass having a thickness of 1.0 mm was used as the substrate 1. A module was prepared by removing the sealing material 7 near the center of the module in the same manner as in Example 1, and when a voltage was applied to the light-emitting diode element to obtain a predetermined output, the temperature of the light-emitting diode element was 150 ° C. or higher in 15 minutes. It became.

<Example 5>
The structure of the LED module for illumination is shown in FIG. 4, the same as in Example 1 except that copper is used as the substrate 1 and the light-emitting diode element 5 is a two-wire type with an output of 1 W. The temperature of the light-emitting diode element 5 was 89 ° C.

<Example 6>
When a white pigment formed of zinc oxide was formed on the insulating layer 2 of Example 1, the emission intensity was increased.

<Example 7>
When a solder resist film was formed on the surface of the module substrate 4 of Example 1, the emission intensity became stronger than that of Example 1.

<Example 8>
Even when the α-sialon in Example 1 was changed to β-sialon, high luminance could be obtained as an illumination module.

<Example 8>
In Example 1, the α-type sialon phosphor was sealed with a sealing material in which 20% by mass was dispersed in a silicone-based sealing material (Toray Dow Corning JCR6125). Filled with phosphor. In Example 8, since the phosphor was blended in the entire sealing material 7, higher luminance than that in Example 1 was achieved.

Claims (9)

  1. A substrate (1), an insulating layer (2) having a thermal conductivity of 1 W / mK or more laminated on the substrate (1), and a conductive layer laminated on the insulating layer (2) with a conductive pattern A module substrate (4) having (3);
    A plurality of light emitting diode elements (5) mounted on the conductive layer (3) of the module substrate (4);
    LED module for illumination which has the fluorescent substance arrange | positioned at the light irradiation side of a light emitting diode element (5).
  2. A substrate (1), an insulating layer (2) having a thermal conductivity of 1 W / mK or more intermittently stacked on the substrate (1), and a conductive pattern on the insulating layer (2). A module substrate (4) having a conductive layer (3),
    A plurality of light emitting diode elements (5) mounted on a substrate (1) of the module substrate (4) where the insulating layer (2) is not laminated;
    LED module for illumination which has the fluorescent substance arrange | positioned at the light irradiation side of a light emitting diode element (5).
  3. A substrate (1), an insulating layer (2) having a thermal conductivity of 1 W / mK or more intermittently stacked on the substrate (1), and a conductive pattern on the insulating layer (2). A module substrate (4) having conductive struts (9) provided at intermittent locations of the conductive layer (3) and the insulating layer (2);
    A light emitting diode element (5) mounted on the support post (9);
    LED module for illumination which has the fluorescent substance arrange | positioned at the light irradiation side of a light emitting diode element (5).
  4. The LED module for illumination according to any one of claims 1 to 3, wherein the substrate (1) is selected from the group consisting of copper, aluminum, or an alloy containing these as a main component.
  5. The lighting LED module according to any one of claims 1 to 3, wherein the substrate (1) is selected from the group consisting of an aluminum alloy-graphite composite and an aluminum alloy-graphite-silicon carbide composite. .
  6. The lighting LED module according to any one of claims 1 to 5, wherein at least one white pigment selected from zinc oxide, calcium carbonate, titanium dioxide, alumina, and smectite is added to the insulating layer.
  7. The LED module for illumination according to any one of claims 1 to 6, wherein a solder resist film is formed on a surface of the module substrate.
  8. The phosphor is represented by the general formula: (M) x (Eu) y (Si, Al) 12 (O, N) 16 (where M is Li, Mg, Ca, Y and lanthanide elements (excluding La and Ce)) Α-sialon selected from the group consisting of one or more elements containing at least Ca), the oxygen content is 1.2 mass% or less, and the primary particles constituting the α-sialon are columnar α The illumination LED module according to any one of claims 1 to 7, which is a type sialon phosphor.
  9. The phosphor is represented by the general formula: Si 6-z Al z O z N 8-z , and is a phosphor mainly composed of β-sialon containing Eu, which is 25 ° C. in measurement by electron spin resonance spectrum. The LED module for illumination according to claim 1, wherein a spin density corresponding to absorption of g = 2.00 ± 0.02 is 2.0 × 10 17 pieces / g or less.
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KR102047889B1 (en) * 2019-03-26 2019-11-22 동의대학교 산학협력단 Manufacturing Method of Powder Coating Materials containing Aluminum Silicate and the Thermal Radiation Application of thereof

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KR102047889B1 (en) * 2019-03-26 2019-11-22 동의대학교 산학협력단 Manufacturing Method of Powder Coating Materials containing Aluminum Silicate and the Thermal Radiation Application of thereof

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