JP2010199497A - 半導体装置の製造装置および半導体装置の製造方法 - Google Patents
半導体装置の製造装置および半導体装置の製造方法 Download PDFInfo
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- JP2010199497A JP2010199497A JP2009045633A JP2009045633A JP2010199497A JP 2010199497 A JP2010199497 A JP 2010199497A JP 2009045633 A JP2009045633 A JP 2009045633A JP 2009045633 A JP2009045633 A JP 2009045633A JP 2010199497 A JP2010199497 A JP 2010199497A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 28
- 239000000758 substrate Substances 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000000356 contaminant Substances 0.000 abstract description 33
- 239000012535 impurity Substances 0.000 abstract description 19
- 239000002245 particle Substances 0.000 abstract description 15
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 78
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 23
- 239000007789 gas Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 20
- 230000007246 mechanism Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 239000003344 environmental pollutant Substances 0.000 description 11
- 231100000719 pollutant Toxicity 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001678 elastic recoil detection analysis Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- -1 NF 3 Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009045633A JP2010199497A (ja) | 2009-02-27 | 2009-02-27 | 半導体装置の製造装置および半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009045633A JP2010199497A (ja) | 2009-02-27 | 2009-02-27 | 半導体装置の製造装置および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010199497A true JP2010199497A (ja) | 2010-09-09 |
| JP2010199497A5 JP2010199497A5 (enrdf_load_stackoverflow) | 2012-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009045633A Withdrawn JP2010199497A (ja) | 2009-02-27 | 2009-02-27 | 半導体装置の製造装置および半導体装置の製造方法 |
Country Status (1)
| Country | Link |
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| JP (1) | JP2010199497A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019122873A1 (en) * | 2017-12-21 | 2019-06-27 | Edwards Limited | A vacuum pumping arrangement |
| JP2020038947A (ja) * | 2018-09-06 | 2020-03-12 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP6718566B1 (ja) * | 2019-06-27 | 2020-07-08 | カンケンテクノ株式会社 | 排ガス除害ユニット |
| JP2020191444A (ja) * | 2019-05-22 | 2020-11-26 | エーエスエム アイピー ホールディング ビー．ブイ． | 装置稼働方法と基板処理装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11343584A (ja) * | 1998-05-28 | 1999-12-14 | Mitsui Chem Inc | ドライエッチング装置およびその運転方法 |
| JP2001168033A (ja) * | 1999-12-03 | 2001-06-22 | Sony Corp | 半導体製造装置 |
| JP2007043171A (ja) * | 2005-08-01 | 2007-02-15 | Samsung Electronics Co Ltd | ポンプユニットを有する半導体素子製造装置及び前記ポンプユニットを洗浄する方法 |
-
2009
- 2009-02-27 JP JP2009045633A patent/JP2010199497A/ja not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11343584A (ja) * | 1998-05-28 | 1999-12-14 | Mitsui Chem Inc | ドライエッチング装置およびその運転方法 |
| JP2001168033A (ja) * | 1999-12-03 | 2001-06-22 | Sony Corp | 半導体製造装置 |
| JP2007043171A (ja) * | 2005-08-01 | 2007-02-15 | Samsung Electronics Co Ltd | ポンプユニットを有する半導体素子製造装置及び前記ポンプユニットを洗浄する方法 |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019122873A1 (en) * | 2017-12-21 | 2019-06-27 | Edwards Limited | A vacuum pumping arrangement |
| JP2021507172A (ja) * | 2017-12-21 | 2021-02-22 | エドワーズ リミテッド | 真空ポンピング構成 |
| JP2020038947A (ja) * | 2018-09-06 | 2020-03-12 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP7080140B2 (ja) | 2018-09-06 | 2022-06-03 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP2020191444A (ja) * | 2019-05-22 | 2020-11-26 | エーエスエム アイピー ホールディング ビー．ブイ． | 装置稼働方法と基板処理装置 |
| JP7517863B2 (ja) | 2019-05-22 | 2024-07-17 | エーエスエム・アイピー・ホールディング・ベー・フェー | 装置稼働方法と基板処理装置 |
| JP6718566B1 (ja) * | 2019-06-27 | 2020-07-08 | カンケンテクノ株式会社 | 排ガス除害ユニット |
| WO2020261518A1 (ja) * | 2019-06-27 | 2020-12-30 | カンケンテクノ株式会社 | 排ガス除害ユニット |
| KR20210018491A (ko) * | 2019-06-27 | 2021-02-17 | 칸켄 테크노 가부시키가이샤 | 배기 가스 제해 유닛 |
| CN112543673A (zh) * | 2019-06-27 | 2021-03-23 | 北京康肯环保设备有限公司 | 废气除害单元 |
| TWI739309B (zh) * | 2019-06-27 | 2021-09-11 | 日商康肯環保設備有限公司 | 廢氣有害物質去除單元 |
| KR102511172B1 (ko) * | 2019-06-27 | 2023-03-20 | 칸켄 테크노 가부시키가이샤 | 배기 가스 제해 유닛 |
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