JP2010182763A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2010182763A
JP2010182763A JP2009023202A JP2009023202A JP2010182763A JP 2010182763 A JP2010182763 A JP 2010182763A JP 2009023202 A JP2009023202 A JP 2009023202A JP 2009023202 A JP2009023202 A JP 2009023202A JP 2010182763 A JP2010182763 A JP 2010182763A
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JP
Japan
Prior art keywords
processed
gas
gas hole
sample stage
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009023202A
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English (en)
Japanese (ja)
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JP2010182763A5 (https=
Inventor
Masatoshi Kawakami
雅敏 川上
Toru Aramaki
徹 荒巻
Shigeru Shirayone
茂 白米
Katanobu Yokogawa
賢悦 横川
Takumi Tando
匠 丹藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2009023202A priority Critical patent/JP2010182763A/ja
Priority to US12/393,272 priority patent/US20100193130A1/en
Publication of JP2010182763A publication Critical patent/JP2010182763A/ja
Publication of JP2010182763A5 publication Critical patent/JP2010182763A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2009023202A 2009-02-04 2009-02-04 プラズマ処理装置 Pending JP2010182763A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009023202A JP2010182763A (ja) 2009-02-04 2009-02-04 プラズマ処理装置
US12/393,272 US20100193130A1 (en) 2009-02-04 2009-02-26 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009023202A JP2010182763A (ja) 2009-02-04 2009-02-04 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2010182763A true JP2010182763A (ja) 2010-08-19
JP2010182763A5 JP2010182763A5 (https=) 2012-03-08

Family

ID=42396736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009023202A Pending JP2010182763A (ja) 2009-02-04 2009-02-04 プラズマ処理装置

Country Status (2)

Country Link
US (1) US20100193130A1 (https=)
JP (1) JP2010182763A (https=)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014143244A (ja) * 2013-01-22 2014-08-07 Tokyo Electron Ltd 載置台及びプラズマ処理装置
JP2016187056A (ja) * 2016-07-22 2016-10-27 東京エレクトロン株式会社 載置台
CN106970173A (zh) * 2015-11-20 2017-07-21 日本株式会社日立高新技术科学 产生气体分析方法以及产生气体分析装置
JP2017201713A (ja) * 2017-07-12 2017-11-09 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
JP2019149422A (ja) * 2018-02-26 2019-09-05 東京エレクトロン株式会社 プラズマ処理装置及び載置台の製造方法
WO2019244631A1 (ja) * 2018-06-19 2019-12-26 東京エレクトロン株式会社 載置台及び基板処理装置
KR20200005398A (ko) * 2018-07-05 2020-01-15 삼성전자주식회사 정전 척 및 그를 포함하는 플라즈마 처리 장치
KR20200047675A (ko) * 2017-10-26 2020-05-07 교세라 가부시키가이샤 시료 유지구
KR102294545B1 (ko) * 2020-11-27 2021-08-27 주식회사 엘케이엔지니어링 정전척 및 그 수리방법
JP2022512852A (ja) * 2018-11-01 2022-02-07 ラム リサーチ コーポレーション Ｈｅ孔着火／アーク放電を防止する特徴を有する高出力静電チャック
JP2022091737A (ja) * 2020-12-09 2022-06-21 三星ディスプレイ株式會社 蒸着装置及びそれを含む表示パネルの製造装置
KR20240155282A (ko) * 2022-03-30 2024-10-28 교세라 가부시키가이샤 통기성 플러그 및 적재대
KR20250137671A (ko) 2023-06-19 2025-09-18 스미토모 오사카 세멘토 가부시키가이샤 정전 척 부재 및 정전 척 장치

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6276919B2 (ja) * 2013-02-01 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置および試料台
JP6655310B2 (ja) * 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US10784139B2 (en) * 2016-12-16 2020-09-22 Applied Materials, Inc. Rotatable electrostatic chuck having backside gas supply
JP7153574B2 (ja) * 2019-01-17 2022-10-14 東京エレクトロン株式会社 上部電極構造、プラズマ処理装置、及び上部電極構造を組み立てる方法
CN114731122B (zh) * 2019-11-25 2025-06-20 京瓷株式会社 试样保持件
JP7458195B2 (ja) * 2020-02-10 2024-03-29 東京エレクトロン株式会社 載置台、プラズマ処理装置及びクリーニング処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344766A (ja) * 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2008117850A (ja) * 2006-11-01 2008-05-22 Hitachi High-Technologies Corp ウエハ載置用電極

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344766A (ja) * 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2008117850A (ja) * 2006-11-01 2008-05-22 Hitachi High-Technologies Corp ウエハ載置用電極

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10340174B2 (en) 2013-01-22 2019-07-02 Tokyo Electron Limited Mounting table and plasma processing apparatus
JP2014143244A (ja) * 2013-01-22 2014-08-07 Tokyo Electron Ltd 載置台及びプラズマ処理装置
CN106970173A (zh) * 2015-11-20 2017-07-21 日本株式会社日立高新技术科学 产生气体分析方法以及产生气体分析装置
JP2016187056A (ja) * 2016-07-22 2016-10-27 東京エレクトロン株式会社 載置台
JP2017201713A (ja) * 2017-07-12 2017-11-09 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
KR20200047675A (ko) * 2017-10-26 2020-05-07 교세라 가부시키가이샤 시료 유지구
KR102394687B1 (ko) 2017-10-26 2022-05-06 교세라 가부시키가이샤 시료 유지구
TWI774926B (zh) * 2018-02-26 2022-08-21 日商東京威力科創股份有限公司 電漿處理裝置及載置台之製造方法
JP6994981B2 (ja) 2018-02-26 2022-01-14 東京エレクトロン株式会社 プラズマ処理装置及び載置台の製造方法
JP2019149422A (ja) * 2018-02-26 2019-09-05 東京エレクトロン株式会社 プラズマ処理装置及び載置台の製造方法
WO2019244631A1 (ja) * 2018-06-19 2019-12-26 東京エレクトロン株式会社 載置台及び基板処理装置
JP2019220555A (ja) * 2018-06-19 2019-12-26 東京エレクトロン株式会社 載置台及び基板処理装置
JP7149739B2 (ja) 2018-06-19 2022-10-07 東京エレクトロン株式会社 載置台及び基板処理装置
KR102650167B1 (ko) 2018-07-05 2024-03-22 삼성전자주식회사 정전 척 및 그를 포함하는 플라즈마 처리 장치
KR20200005398A (ko) * 2018-07-05 2020-01-15 삼성전자주식회사 정전 척 및 그를 포함하는 플라즈마 처리 장치
JP2022512852A (ja) * 2018-11-01 2022-02-07 ラム リサーチ コーポレーション Ｈｅ孔着火／アーク放電を防止する特徴を有する高出力静電チャック
JP7534292B2 (ja) 2018-11-01 2024-08-14 ラム リサーチ コーポレーション Ｈｅ孔着火／アーク放電を防止する特徴を有する高出力静電チャック
KR102294545B1 (ko) * 2020-11-27 2021-08-27 주식회사 엘케이엔지니어링 정전척 및 그 수리방법
JP2022091737A (ja) * 2020-12-09 2022-06-21 三星ディスプレイ株式會社 蒸着装置及びそれを含む表示パネルの製造装置
KR20240155282A (ko) * 2022-03-30 2024-10-28 교세라 가부시키가이샤 통기성 플러그 및 적재대
KR102923087B1 (ko) 2022-03-30 2026-02-06 교세라 가부시키가이샤 통기성 플러그 및 적재대
KR20250137671A (ko) 2023-06-19 2025-09-18 스미토모 오사카 세멘토 가부시키가이샤 정전 척 부재 및 정전 척 장치

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