JP2010182763A - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP2010182763A
JP2010182763A JP2009023202A JP2009023202A JP2010182763A JP 2010182763 A JP2010182763 A JP 2010182763A JP 2009023202 A JP2009023202 A JP 2009023202A JP 2009023202 A JP2009023202 A JP 2009023202A JP 2010182763 A JP2010182763 A JP 2010182763A
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JP
Japan
Prior art keywords
processed
gas
gas hole
sample stage
processing apparatus
Prior art date
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Pending
Application number
JP2009023202A
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English (en)
Japanese (ja)
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JP2010182763A5 (enExample
Inventor
Masatoshi Kawakami
雅敏 川上
Toru Aramaki
徹 荒巻
Shigeru Shirayone
茂 白米
Katanobu Yokogawa
賢悦 横川
Takumi Tando
匠 丹藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2009023202A priority Critical patent/JP2010182763A/ja
Priority to US12/393,272 priority patent/US20100193130A1/en
Publication of JP2010182763A publication Critical patent/JP2010182763A/ja
Publication of JP2010182763A5 publication Critical patent/JP2010182763A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2009023202A 2009-02-04 2009-02-04 プラズマ処理装置 Pending JP2010182763A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009023202A JP2010182763A (ja) 2009-02-04 2009-02-04 プラズマ処理装置
US12/393,272 US20100193130A1 (en) 2009-02-04 2009-02-26 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009023202A JP2010182763A (ja) 2009-02-04 2009-02-04 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2010182763A true JP2010182763A (ja) 2010-08-19
JP2010182763A5 JP2010182763A5 (enExample) 2012-03-08

Family

ID=42396736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009023202A Pending JP2010182763A (ja) 2009-02-04 2009-02-04 プラズマ処理装置

Country Status (2)

Country Link
US (1) US20100193130A1 (enExample)
JP (1) JP2010182763A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014143244A (ja) * 2013-01-22 2014-08-07 Tokyo Electron Ltd 載置台及びプラズマ処理装置
JP2016187056A (ja) * 2016-07-22 2016-10-27 東京エレクトロン株式会社 載置台
CN106970173A (zh) * 2015-11-20 2017-07-21 日本株式会社日立高新技术科学 产生气体分析方法以及产生气体分析装置
JP2017201713A (ja) * 2017-07-12 2017-11-09 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
JP2019149422A (ja) * 2018-02-26 2019-09-05 東京エレクトロン株式会社 プラズマ処理装置及び載置台の製造方法
JP2019220555A (ja) * 2018-06-19 2019-12-26 東京エレクトロン株式会社 載置台及び基板処理装置
KR20200005398A (ko) * 2018-07-05 2020-01-15 삼성전자주식회사 정전 척 및 그를 포함하는 플라즈마 처리 장치
KR20200047675A (ko) * 2017-10-26 2020-05-07 교세라 가부시키가이샤 시료 유지구
KR102294545B1 (ko) * 2020-11-27 2021-08-27 주식회사 엘케이엔지니어링 정전척 및 그 수리방법
JP2022512852A (ja) * 2018-11-01 2022-02-07 ラム リサーチ コーポレーション Ｈｅ孔着火／アーク放電を防止する特徴を有する高出力静電チャック
JP2022091737A (ja) * 2020-12-09 2022-06-21 三星ディスプレイ株式會社 蒸着装置及びそれを含む表示パネルの製造装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6276919B2 (ja) * 2013-02-01 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置および試料台
JP6655310B2 (ja) 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US10784139B2 (en) * 2016-12-16 2020-09-22 Applied Materials, Inc. Rotatable electrostatic chuck having backside gas supply
JP7153574B2 (ja) * 2019-01-17 2022-10-14 東京エレクトロン株式会社 上部電極構造、プラズマ処理装置、及び上部電極構造を組み立てる方法
KR102726666B1 (ko) * 2019-11-25 2024-11-06 교세라 가부시키가이샤 시료 유지구
JP7458195B2 (ja) * 2020-02-10 2024-03-29 東京エレクトロン株式会社 載置台、プラズマ処理装置及びクリーニング処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344766A (ja) * 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2008117850A (ja) * 2006-11-01 2008-05-22 Hitachi High-Technologies Corp ウエハ載置用電極

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5720818A (en) * 1996-04-26 1998-02-24 Applied Materials, Inc. Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344766A (ja) * 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2008117850A (ja) * 2006-11-01 2008-05-22 Hitachi High-Technologies Corp ウエハ載置用電極

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014143244A (ja) * 2013-01-22 2014-08-07 Tokyo Electron Ltd 載置台及びプラズマ処理装置
US10340174B2 (en) 2013-01-22 2019-07-02 Tokyo Electron Limited Mounting table and plasma processing apparatus
CN106970173A (zh) * 2015-11-20 2017-07-21 日本株式会社日立高新技术科学 产生气体分析方法以及产生气体分析装置
JP2016187056A (ja) * 2016-07-22 2016-10-27 東京エレクトロン株式会社 載置台
JP2017201713A (ja) * 2017-07-12 2017-11-09 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
KR20200047675A (ko) * 2017-10-26 2020-05-07 교세라 가부시키가이샤 시료 유지구
KR102394687B1 (ko) 2017-10-26 2022-05-06 교세라 가부시키가이샤 시료 유지구
JP2019149422A (ja) * 2018-02-26 2019-09-05 東京エレクトロン株式会社 プラズマ処理装置及び載置台の製造方法
JP6994981B2 (ja) 2018-02-26 2022-01-14 東京エレクトロン株式会社 プラズマ処理装置及び載置台の製造方法
TWI774926B (zh) * 2018-02-26 2022-08-21 日商東京威力科創股份有限公司 電漿處理裝置及載置台之製造方法
JP2019220555A (ja) * 2018-06-19 2019-12-26 東京エレクトロン株式会社 載置台及び基板処理装置
WO2019244631A1 (ja) * 2018-06-19 2019-12-26 東京エレクトロン株式会社 載置台及び基板処理装置
JP7149739B2 (ja) 2018-06-19 2022-10-07 東京エレクトロン株式会社 載置台及び基板処理装置
KR20200005398A (ko) * 2018-07-05 2020-01-15 삼성전자주식회사 정전 척 및 그를 포함하는 플라즈마 처리 장치
KR102650167B1 (ko) 2018-07-05 2024-03-22 삼성전자주식회사 정전 척 및 그를 포함하는 플라즈마 처리 장치
JP2022512852A (ja) * 2018-11-01 2022-02-07 ラム リサーチ コーポレーション Ｈｅ孔着火／アーク放電を防止する特徴を有する高出力静電チャック
JP7534292B2 (ja) 2018-11-01 2024-08-14 ラム リサーチ コーポレーション Ｈｅ孔着火／アーク放電を防止する特徴を有する高出力静電チャック
KR102294545B1 (ko) * 2020-11-27 2021-08-27 주식회사 엘케이엔지니어링 정전척 및 그 수리방법
JP2022091737A (ja) * 2020-12-09 2022-06-21 三星ディスプレイ株式會社 蒸着装置及びそれを含む表示パネルの製造装置

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