JP2010167782A5 - - Google Patents
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- Publication number
- JP2010167782A5 JP2010167782A5 JP2010010240A JP2010010240A JP2010167782A5 JP 2010167782 A5 JP2010167782 A5 JP 2010167782A5 JP 2010010240 A JP2010010240 A JP 2010010240A JP 2010010240 A JP2010010240 A JP 2010010240A JP 2010167782 A5 JP2010167782 A5 JP 2010167782A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resist pattern
- deposition
- thickness
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000463 material Substances 0.000 claims 29
- 238000000034 method Methods 0.000 claims 28
- 238000000151 deposition Methods 0.000 claims 14
- 230000008021 deposition Effects 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 8
- 238000000992 sputter etching Methods 0.000 claims 3
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 238000013459 approach Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/357,296 US20100183957A1 (en) | 2009-01-21 | 2009-01-21 | Method of Patterned Media Template Formation and Templates |
| US12/357,296 | 2009-01-21 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010167782A JP2010167782A (ja) | 2010-08-05 |
| JP2010167782A5 true JP2010167782A5 (https=) | 2013-02-14 |
| JP5670060B2 JP5670060B2 (ja) | 2015-02-18 |
Family
ID=42337218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010010240A Expired - Fee Related JP5670060B2 (ja) | 2009-01-21 | 2010-01-20 | パターン・メディア用テンプレートおよびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20100183957A1 (https=) |
| JP (1) | JP5670060B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8771529B1 (en) * | 2010-09-30 | 2014-07-08 | Seagate Technology Llc | Method for imprint lithography |
| US8771847B2 (en) | 2011-10-14 | 2014-07-08 | Seagate Technology | Reader stop-layers |
| JP6136271B2 (ja) * | 2013-01-08 | 2017-05-31 | 大日本印刷株式会社 | インプリントモールドの製造方法 |
| US9466325B2 (en) * | 2013-07-10 | 2016-10-11 | Seagate Technology Llc | Patterned growth guiding mechanism |
| US9269384B1 (en) | 2015-05-29 | 2016-02-23 | Seagate Technology Llc | Template misalignment and eccentricity error compensation for a patterned medium |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01243426A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | レジスト膜のエツチング方法 |
| JPH0242723A (ja) * | 1988-08-02 | 1990-02-13 | Nec Corp | 微細パターン形成方法 |
| JPH02260423A (ja) * | 1989-03-31 | 1990-10-23 | Hitachi Ltd | 有機膜のドライエッチング方法 |
| JPH0494536A (ja) * | 1990-08-10 | 1992-03-26 | Fujitsu Ltd | レジストパターンの形成方法 |
| US5618383A (en) * | 1994-03-30 | 1997-04-08 | Texas Instruments Incorporated | Narrow lateral dimensioned microelectronic structures and method of forming the same |
| US7268082B2 (en) * | 2004-04-30 | 2007-09-11 | International Business Machines Corporation | Highly selective nitride etching employing surface mediated uniform reactive layer films |
| JP2006276266A (ja) * | 2005-03-28 | 2006-10-12 | Toshiba Corp | レティクルおよびそれを用いた磁気ディスク媒体の製造方法ならびに磁気ディスク媒体 |
| US7537866B2 (en) * | 2006-05-24 | 2009-05-26 | Synopsys, Inc. | Patterning a single integrated circuit layer using multiple masks and multiple masking layers |
| US7807575B2 (en) * | 2006-11-29 | 2010-10-05 | Micron Technology, Inc. | Methods to reduce the critical dimension of semiconductor devices |
| JP2008276907A (ja) * | 2007-03-30 | 2008-11-13 | Fujifilm Corp | モールド構造体、及びそれを用いたインプリント方法、並びに磁気記録媒体及びその製造方法 |
| US7758981B2 (en) * | 2007-07-25 | 2010-07-20 | Hitachi Global Storage Technologies Netherlands B.V. | Method for making a master disk for nanoimprinting patterned magnetic recording disks, master disk made by the method, and disk imprinted by the master disk |
-
2009
- 2009-01-21 US US12/357,296 patent/US20100183957A1/en not_active Abandoned
-
2010
- 2010-01-20 JP JP2010010240A patent/JP5670060B2/ja not_active Expired - Fee Related
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