JP5670060B2 - パターン・メディア用テンプレートおよびその製造方法 - Google Patents
パターン・メディア用テンプレートおよびその製造方法 Download PDFInfo
- Publication number
- JP5670060B2 JP5670060B2 JP2010010240A JP2010010240A JP5670060B2 JP 5670060 B2 JP5670060 B2 JP 5670060B2 JP 2010010240 A JP2010010240 A JP 2010010240A JP 2010010240 A JP2010010240 A JP 2010010240A JP 5670060 B2 JP5670060 B2 JP 5670060B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- deposition
- resist pattern
- pattern
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims description 97
- 239000000463 material Substances 0.000 claims description 68
- 230000008569 process Effects 0.000 claims description 35
- 238000000151 deposition Methods 0.000 claims description 30
- 230000008021 deposition Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000992 sputter etching Methods 0.000 claims description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 14
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 23
- 229910052799 carbon Inorganic materials 0.000 description 23
- 230000005291 magnetic effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000000059 patterning Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000000609 electron-beam lithography Methods 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- 238000013500 data storage Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/855—Coating only part of a support with a magnetic layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/86—Re-recording, i.e. transcribing information from one magnetisable record carrier on to one or more similar or dissimilar record carriers
- G11B5/865—Re-recording, i.e. transcribing information from one magnetisable record carrier on to one or more similar or dissimilar record carriers by contact "printing"
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/357,296 US20100183957A1 (en) | 2009-01-21 | 2009-01-21 | Method of Patterned Media Template Formation and Templates |
| US12/357,296 | 2009-01-21 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010167782A JP2010167782A (ja) | 2010-08-05 |
| JP2010167782A5 JP2010167782A5 (https=) | 2013-02-14 |
| JP5670060B2 true JP5670060B2 (ja) | 2015-02-18 |
Family
ID=42337218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010010240A Expired - Fee Related JP5670060B2 (ja) | 2009-01-21 | 2010-01-20 | パターン・メディア用テンプレートおよびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20100183957A1 (https=) |
| JP (1) | JP5670060B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8771529B1 (en) * | 2010-09-30 | 2014-07-08 | Seagate Technology Llc | Method for imprint lithography |
| US8771847B2 (en) | 2011-10-14 | 2014-07-08 | Seagate Technology | Reader stop-layers |
| JP6136271B2 (ja) * | 2013-01-08 | 2017-05-31 | 大日本印刷株式会社 | インプリントモールドの製造方法 |
| US9466325B2 (en) * | 2013-07-10 | 2016-10-11 | Seagate Technology Llc | Patterned growth guiding mechanism |
| US9269384B1 (en) | 2015-05-29 | 2016-02-23 | Seagate Technology Llc | Template misalignment and eccentricity error compensation for a patterned medium |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01243426A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | レジスト膜のエツチング方法 |
| JPH0242723A (ja) * | 1988-08-02 | 1990-02-13 | Nec Corp | 微細パターン形成方法 |
| JPH02260423A (ja) * | 1989-03-31 | 1990-10-23 | Hitachi Ltd | 有機膜のドライエッチング方法 |
| JPH0494536A (ja) * | 1990-08-10 | 1992-03-26 | Fujitsu Ltd | レジストパターンの形成方法 |
| US5618383A (en) * | 1994-03-30 | 1997-04-08 | Texas Instruments Incorporated | Narrow lateral dimensioned microelectronic structures and method of forming the same |
| US7268082B2 (en) * | 2004-04-30 | 2007-09-11 | International Business Machines Corporation | Highly selective nitride etching employing surface mediated uniform reactive layer films |
| JP2006276266A (ja) * | 2005-03-28 | 2006-10-12 | Toshiba Corp | レティクルおよびそれを用いた磁気ディスク媒体の製造方法ならびに磁気ディスク媒体 |
| US7537866B2 (en) * | 2006-05-24 | 2009-05-26 | Synopsys, Inc. | Patterning a single integrated circuit layer using multiple masks and multiple masking layers |
| US7807575B2 (en) * | 2006-11-29 | 2010-10-05 | Micron Technology, Inc. | Methods to reduce the critical dimension of semiconductor devices |
| JP2008276907A (ja) * | 2007-03-30 | 2008-11-13 | Fujifilm Corp | モールド構造体、及びそれを用いたインプリント方法、並びに磁気記録媒体及びその製造方法 |
| US7758981B2 (en) * | 2007-07-25 | 2010-07-20 | Hitachi Global Storage Technologies Netherlands B.V. | Method for making a master disk for nanoimprinting patterned magnetic recording disks, master disk made by the method, and disk imprinted by the master disk |
-
2009
- 2009-01-21 US US12/357,296 patent/US20100183957A1/en not_active Abandoned
-
2010
- 2010-01-20 JP JP2010010240A patent/JP5670060B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20100183957A1 (en) | 2010-07-22 |
| JP2010167782A (ja) | 2010-08-05 |
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