JP2015076417A5 - - Google Patents
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- JP2015076417A5 JP2015076417A5 JP2013209507A JP2013209507A JP2015076417A5 JP 2015076417 A5 JP2015076417 A5 JP 2015076417A5 JP 2013209507 A JP2013209507 A JP 2013209507A JP 2013209507 A JP2013209507 A JP 2013209507A JP 2015076417 A5 JP2015076417 A5 JP 2015076417A5
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- JP
- Japan
- Prior art keywords
- substrate
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- injector
- material gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 22
- 230000007246 mechanism Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 21
- 239000007789 gas Substances 0.000 description 15
- 239000012159 carrier gas Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Images
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013209507A JP6058515B2 (ja) | 2013-10-04 | 2013-10-04 | 気相成膜装置 |
| TW103133413A TWI521089B (zh) | 2013-10-04 | 2014-09-26 | 氣相成膜裝置 |
| DE102014114099.0A DE102014114099A1 (de) | 2013-10-04 | 2014-09-29 | Gasphasen-Schichtabscheidung-Vorrichtung |
| CN201410512506.0A CN104513968B (zh) | 2013-10-04 | 2014-09-29 | 气相成膜装置 |
| US14/502,801 US20150096496A1 (en) | 2013-10-04 | 2014-09-30 | Vapor phase film deposition apparatus |
| KR1020140133061A KR101681375B1 (ko) | 2013-10-04 | 2014-10-02 | 기상 성막 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013209507A JP6058515B2 (ja) | 2013-10-04 | 2013-10-04 | 気相成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015076417A JP2015076417A (ja) | 2015-04-20 |
| JP2015076417A5 true JP2015076417A5 (https=) | 2016-07-21 |
| JP6058515B2 JP6058515B2 (ja) | 2017-01-11 |
Family
ID=52693369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013209507A Active JP6058515B2 (ja) | 2013-10-04 | 2013-10-04 | 気相成膜装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20150096496A1 (https=) |
| JP (1) | JP6058515B2 (https=) |
| KR (1) | KR101681375B1 (https=) |
| CN (1) | CN104513968B (https=) |
| DE (1) | DE102014114099A1 (https=) |
| TW (1) | TWI521089B (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102773048B (zh) * | 2011-05-09 | 2017-06-06 | 波利玛利欧洲股份公司 | 生产环己酮肟的氨肟化反应器 |
| TWI563542B (en) * | 2014-11-21 | 2016-12-21 | Hermes Epitek Corp | Approach of controlling the wafer and the thin film surface temperature |
| JP6569406B2 (ja) * | 2015-09-09 | 2019-09-04 | セイコーエプソン株式会社 | 原子層堆積装置および原子層堆積の成膜方法 |
| JP6685216B2 (ja) * | 2016-01-26 | 2020-04-22 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 |
| TWI612176B (zh) * | 2016-11-01 | 2018-01-21 | 漢民科技股份有限公司 | 應用於沉積系統的氣體分配裝置 |
| US10844490B2 (en) | 2018-06-11 | 2020-11-24 | Hermes-Epitek Corp. | Vapor phase film deposition apparatus |
| CN214848503U (zh) | 2018-08-29 | 2021-11-23 | 应用材料公司 | 注入器设备、基板处理设备及在机器可读介质中实现的结构 |
| TWI680201B (zh) * | 2018-09-27 | 2019-12-21 | 漢民科技股份有限公司 | 氣相沉積裝置及其蓋板與噴氣裝置 |
| DE102018130140A1 (de) * | 2018-11-28 | 2020-05-28 | Aixtron Se | Verfahren zur Herstellung eines Bestandteils eines CVD-Reaktors |
| DE102020101066A1 (de) * | 2020-01-17 | 2021-07-22 | Aixtron Se | CVD-Reaktor mit doppelter Vorlaufzonenplatte |
| CN112323043A (zh) * | 2020-10-30 | 2021-02-05 | 泉芯集成电路制造(济南)有限公司 | 一种气体分配器以及原子层沉积反应设备 |
| CN119220962A (zh) * | 2023-06-28 | 2024-12-31 | 中微半导体设备(上海)股份有限公司 | 晶圆承载装置、气相沉积设备及使用方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2596070A1 (fr) * | 1986-03-21 | 1987-09-25 | Labo Electronique Physique | Dispositif comprenant un suscepteur plan tournant parallelement a un plan de reference autour d'un axe perpendiculaire a ce plan |
| JPH06310438A (ja) * | 1993-04-22 | 1994-11-04 | Mitsubishi Electric Corp | 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置 |
| JPH08181076A (ja) * | 1994-10-26 | 1996-07-12 | Fuji Xerox Co Ltd | 薄膜形成方法および薄膜形成装置 |
| US5468299A (en) * | 1995-01-09 | 1995-11-21 | Tsai; Charles S. | Device comprising a flat susceptor rotating parallel to a reference surface about a shaft perpendicular to this surface |
| US5788777A (en) * | 1997-03-06 | 1998-08-04 | Burk, Jr.; Albert A. | Susceptor for an epitaxial growth factor |
| US6005226A (en) * | 1997-11-24 | 1999-12-21 | Steag-Rtp Systems | Rapid thermal processing (RTP) system with gas driven rotating substrate |
| US6449428B2 (en) * | 1998-12-11 | 2002-09-10 | Mattson Technology Corp. | Gas driven rotating susceptor for rapid thermal processing (RTP) system |
| JP4537566B2 (ja) * | 2000-12-07 | 2010-09-01 | 大陽日酸株式会社 | 基板回転機構を備えた成膜装置 |
| US6569250B2 (en) * | 2001-01-08 | 2003-05-27 | Cree, Inc. | Gas-driven rotation apparatus and method for forming silicon carbide layers |
| JP2002305155A (ja) * | 2001-04-09 | 2002-10-18 | Nikko Materials Co Ltd | ＧａＮ系化合物半導体結晶の結晶成長装置 |
| US6797069B2 (en) * | 2002-04-08 | 2004-09-28 | Cree, Inc. | Gas driven planetary rotation apparatus and methods for forming silicon carbide layers |
| JP2005005693A (ja) | 2003-05-16 | 2005-01-06 | Asekku:Kk | 化学気相成長装置 |
| JP4423082B2 (ja) * | 2004-03-29 | 2010-03-03 | 京セラ株式会社 | ガスノズルおよびその製造方法とそれを用いた薄膜形成装置 |
| KR101309334B1 (ko) * | 2004-08-02 | 2013-09-16 | 비코 인스트루먼츠 인코포레이티드 | 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터 |
| JP2006093275A (ja) * | 2004-09-22 | 2006-04-06 | Hitachi Cable Ltd | 気相成長方法 |
| JP2006228782A (ja) * | 2005-02-15 | 2006-08-31 | Sumco Corp | 枚葉式エピタキシャルウェーハ製造装置およびその保守方法 |
| JP2007180340A (ja) * | 2005-12-28 | 2007-07-12 | Matsushita Electric Ind Co Ltd | 半導体装置の製造装置 |
| JP5107185B2 (ja) * | 2008-09-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
| JP2010232624A (ja) * | 2009-02-26 | 2010-10-14 | Japan Pionics Co Ltd | Ｉｉｉ族窒化物半導体の気相成長装置 |
| JP5068780B2 (ja) * | 2009-03-04 | 2012-11-07 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、プログラム、およびコンピュータ可読記憶媒体 |
| JP5409413B2 (ja) | 2010-01-26 | 2014-02-05 | 日本パイオニクス株式会社 | Ｉｉｉ族窒化物半導体の気相成長装置 |
| KR100996210B1 (ko) * | 2010-04-12 | 2010-11-24 | 세메스 주식회사 | 가스 분사 유닛 및 이를 이용한 박막 증착 장치 및 방법 |
| JP2013197474A (ja) * | 2012-03-22 | 2013-09-30 | Hitachi Kokusai Electric Inc | 基板処理方法と半導体装置の製造方法、および基板処理装置 |
-
2013
- 2013-10-04 JP JP2013209507A patent/JP6058515B2/ja active Active
-
2014
- 2014-09-26 TW TW103133413A patent/TWI521089B/zh active
- 2014-09-29 CN CN201410512506.0A patent/CN104513968B/zh active Active
- 2014-09-29 DE DE102014114099.0A patent/DE102014114099A1/de not_active Withdrawn
- 2014-09-30 US US14/502,801 patent/US20150096496A1/en not_active Abandoned
- 2014-10-02 KR KR1020140133061A patent/KR101681375B1/ko not_active Expired - Fee Related
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