JP2010167484A - Method and apparatus of removing thin film of thin film laminated glass substrate - Google Patents

Method and apparatus of removing thin film of thin film laminated glass substrate Download PDF

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JP2010167484A
JP2010167484A JP2009014656A JP2009014656A JP2010167484A JP 2010167484 A JP2010167484 A JP 2010167484A JP 2009014656 A JP2009014656 A JP 2009014656A JP 2009014656 A JP2009014656 A JP 2009014656A JP 2010167484 A JP2010167484 A JP 2010167484A
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thin film
glass substrate
laminated glass
film laminated
gas
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JP5207306B2 (en
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Taro Kuwabara
太郎 桑原
Yoichi Kawakami
洋一 川上
Hidenori Aoki
秀憲 青木
Takashi Tamari
隆志 玉利
Daisuke Maeyama
大輔 前山
Kenta Hasegawa
健太 長谷川
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TAKEI ELECTRIC IND CO Ltd
TAKEI ELECTRIC INDUSTRIES CO Ltd
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TAKEI ELECTRIC IND CO Ltd
TAKEI ELECTRIC INDUSTRIES CO Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To remove an unnecessary film in the periphery of a thin film laminated glass substrate by laser without degrading quality as a device while more surely preventing evaporated matters, plasma, dust, etc., generated during machining from sticking to parts composing the device in a substrate. <P>SOLUTION: A thin film removing apparatus (A) includes: a receptacle pin (11) that holds the substrate (5), with a thin film (51) put on the lower side; a laser scanning part (4) that removes the unnecessary portions of the thin film (51) by irradiating a machining part through a glass plate (50) with a laser beam from the glass plate (50) side of the substrate (5); a gas supply part (2) that supplies gas in parallel with the film face of the thin film (51) from the side of a non-machining region in the lower part of the substrate (5); and a gas sucking part (3) that sucks the gas supplied in the gas supply part (2), and the atmosphere containing the evaporated matters, plasma, dust, etc., generated in the machining part, in the manner flowing to each side direction in parallel with the film face of the thin film (51). <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、薄膜積層ガラス基板の薄膜除去方法及び装置に関するものである。更に詳しくは、薄膜積層ガラス基板の周辺部の不要な薄膜をレーザにより除去する際、薄膜積層ガラス基板に熱による損傷を与えることなく、加工点で発生する蒸発物やプラズマ、粉塵等の基板への付着を防止することができるものに関する。   The present invention relates to a method and apparatus for removing a thin film from a thin film laminated glass substrate. More specifically, when an unnecessary thin film at the periphery of the thin film laminated glass substrate is removed by a laser, the thin film laminated glass substrate is not damaged by heat, and the evaporated material generated at the processing point, plasma, dust, etc. It is related with what can prevent adhesion.

例えば薄膜太陽電池やフラットパネルディスプレイなどの製造工程においては、機能性材料の薄膜を積層したガラス基板である薄膜積層ガラス基板が製作される。この薄膜積層ガラス基板は、基板同士の貼り合せや薄膜部分の気密性を保つために、ガラス基板周辺部の封止を行う場合がある。   For example, in a manufacturing process of a thin film solar cell or a flat panel display, a thin film laminated glass substrate which is a glass substrate on which thin films of functional materials are laminated is manufactured. This thin-film laminated glass substrate may be sealed at the periphery of the glass substrate in order to keep the substrates bonded together and to keep the thin film portion airtight.

その際、接着箇所となるガラス基板周辺部では、積層された機能性材料の薄膜が接着力の低下や外部への電気の漏洩などを引き起こす可能性があるため、予めその部分の薄膜を除去する工程が必要になる。従来、この工程は、研磨や湿式腐食処理により行われることが多かったが、ランニングコストや発生する廃棄物の観点から、近年においては、レーザを用いて薄膜を除去する装置が提案されている(例えば特許文献1参照)。   At that time, since the laminated thin film of the functional material may cause a decrease in adhesive force or leakage of electricity to the outside in the peripheral portion of the glass substrate that becomes the bonding location, the thin film in that portion is removed in advance. A process is required. Conventionally, this process has often been performed by polishing or wet corrosion treatment, but recently, from the viewpoint of running cost and generated waste, an apparatus for removing a thin film using a laser has been proposed ( For example, see Patent Document 1).

特許文献1に記載のレーザ加工装置は、被加工体にレーザ光を照射するレーザ装置と、レーザ光によって加工される被加工体のスキャンエリアに向く噴出口を備え、この噴出口からスキャンエリアにエアーを噴き付けるエアー噴出装置と、レーザ光によって被加工体から発生する塵埃を集塵する集塵装置とを備えており、レーザ加工時に発生する塵埃が被加工体に付着するのを防止することができるというものである。   The laser processing apparatus described in Patent Document 1 includes a laser device that irradiates a workpiece with laser light, and a jet port that faces the scan area of the workpiece to be processed by the laser beam. Equipped with an air jetting device that blows air and a dust collector that collects dust generated from the workpiece by laser light, and prevents dust generated during laser processing from adhering to the workpiece It can be done.

特開2007−185685JP2007-185685

しかしながら、特許文献1に記載のレーザ加工装置には、次のような課題があった。
すなわち、加工において、ガラス基板はデバイスが設けられている薄膜を上面側にしてセットされており、加工点で生じた蒸発物やプラズマ、粉塵等を吸引部へ送るエアーを斜め上方から吹き付ける作業をガラス基板の膜面上方で行うので、大量に生じた蒸発物やプラズマ、粉塵等のうち、エアーの流れから漏れた一部が重力によって薄膜上に降りてデバイスを構成する部分に付着し、絶縁箇所の抵抗値低下を引き起こす等、商品性が損なわれるおそれがあった。
However, the laser processing apparatus described in Patent Document 1 has the following problems.
That is, in processing, the glass substrate is set with the thin film on which the device is provided on the upper surface side, and the work of blowing air that sends evaporate, plasma, dust etc. generated at the processing point to the suction part from diagonally above Since it is performed above the film surface of the glass substrate, a part of the evaporated material, plasma, dust, etc. that leaks from the air flow descends onto the thin film due to gravity and adheres to the parts that make up the device, insulating. There was a risk that the merchantability would be impaired, such as causing a decrease in the resistance value of the part.

また、一般的に、レーザを用いて薄膜の除去加工を行う場合、処理能力を高めるために、平均出力500W以上の高出力のパルスレーザが採用されることが多い。しかし、高出力のパルスレーザによる加工では、薄膜が除去される際に局所的にガラス基板の温度が極めて高温になり、薄膜と接するガラス板に熱の影響で微細なクラック等が発生するおそれがあった。   In general, when performing removal processing of a thin film using a laser, a high-power pulse laser having an average output of 500 W or more is often employed in order to increase the processing capability. However, in processing with a high-power pulse laser, the temperature of the glass substrate locally becomes extremely high when the thin film is removed, and there is a risk that fine cracks and the like may occur due to the heat on the glass plate in contact with the thin film. there were.

本発明の目的は、加工点で発生した蒸発物やプラズマ、粉塵等の、基板内のデバイスを構成する部分に対する付着をより確実に防止し、デバイスとしての品質を低下させることなく薄膜積層ガラス基板の周辺部の不要な薄膜をレーザにより除去することができる装置を提供することである。   The object of the present invention is to more reliably prevent the evaporation, plasma, dust, etc. generated at the processing point from adhering to the part constituting the device in the substrate, and the thin film laminated glass substrate without deteriorating the quality as the device It is an object of the present invention to provide an apparatus capable of removing an unnecessary thin film around the periphery of the substrate with a laser.

また、本発明の他の目的は、前記目的に加えて、薄膜積層ガラス基板にレーザの熱による微細なクラック等の損傷が生じにくいようにすることである。   In addition to the above object, another object of the present invention is to make it difficult for the thin film laminated glass substrate to be damaged such as fine cracks due to laser heat.

上記課題を解決するために本発明が講じた手段は次のとおりである。
本発明は、
薄膜積層ガラス基板においてデバイスが設けられている薄膜の不要部分をガラス板から除去する装置であって、
薄膜を下側にして薄膜積層ガラス基板を保持する保持部と、
薄膜積層ガラス基板のガラス板側からガラス板を通し加工部にレーザを当てて薄膜の不要部分を除去するレーザ走査部と、
薄膜積層ガラス基板の下方において薄膜積層ガラス基板の非加工領域側から薄膜の膜面と平行に気体を供給する気体供給部と、
気体供給部で供給された気体と、薄膜積層ガラス基板の加工部で生じた蒸発物やプラズマ、粉塵等を含む雰囲気を薄膜積層ガラス基板の非加工領域側から薄膜の膜面と平行に各辺方向へ流れるように吸引する気体吸引部と、
を備えている、薄膜積層ガラス基板の薄膜除去装置である。
Means taken by the present invention to solve the above problems are as follows.
The present invention
An apparatus for removing unnecessary portions of a thin film provided with devices in a thin film laminated glass substrate from a glass plate,
A holding part for holding the thin-film laminated glass substrate with the thin film facing down,
A laser scanning unit that removes unnecessary portions of the thin film by applying a laser to the processing unit through the glass plate from the glass plate side of the thin film laminated glass substrate;
A gas supply unit that supplies gas in parallel with the film surface of the thin film from the non-processed region side of the thin film laminated glass substrate below the thin film laminated glass substrate;
Each side parallel to the film surface of the thin film from the non-processed area side of the thin film laminated glass substrate, including the gas supplied by the gas supply unit and the atmosphere containing evaporant, plasma, dust, etc. generated in the processed part of the thin film laminated glass substrate A gas suction part for sucking so as to flow in the direction;
A thin film removing apparatus for a thin film laminated glass substrate.

本発明は、
レーザ走査部によるレーザの走査は、薄膜積層ガラス基板の加工部において薄膜積層ガラス基板の辺部とほぼ平行に往復走査しながら気体の流れの方向と同じ方向へ移動させて、加工部の全面について行うようにしてある、
前記薄膜積層ガラス基板の薄膜除去装置である。
The present invention
The laser scanning unit scans the entire surface of the processing unit by moving the processing unit of the thin film laminated glass substrate in the same direction as the gas flow direction while reciprocating and scanning in parallel with the side of the thin film laminated glass substrate. Like to do,
A thin film removing apparatus for the thin film laminated glass substrate.

本発明は、
レーザ走査部のパルスレーザ発振器の平均出力が200W以下である、
前記薄膜積層ガラス基板の薄膜除去装置である。
The present invention
The average output of the pulse laser oscillator of the laser scanning unit is 200 W or less,
A thin film removing apparatus for the thin film laminated glass substrate.

本発明は、
薄膜積層ガラス基板においてデバイスが設けられている薄膜の不要部分をガラス板から除去する方法であって、
薄膜を下側にして薄膜積層ガラス基板を保持し、
薄膜積層ガラス基板の下方において薄膜積層ガラス基板の非加工領域側から薄膜の膜面と平行に気体を供給し、
薄膜積層ガラス基板のガラス板側からガラス板を通し加工部にレーザを当てて薄膜の不要部分を除去し、
供給された気体と、薄膜積層ガラス基板の加工部で生じた蒸発物やプラズマ、粉塵等を含む雰囲気を薄膜積層ガラス基板の非加工領域側から薄膜の膜面と平行に各辺方向へ流れるように吸引する、
薄膜積層ガラス基板の薄膜除去方法である。
The present invention
A method for removing unnecessary portions of a thin film on which a device is provided in a thin film laminated glass substrate from a glass plate,
Hold the thin film laminated glass substrate with the thin film facing down,
Under the thin film laminated glass substrate, gas is supplied in parallel with the film surface of the thin film from the non-processed region side of the thin film laminated glass substrate,
Pass the glass plate from the glass plate side of the thin film laminated glass substrate and apply laser to the processed part to remove the unnecessary part of the thin film,
The atmosphere containing the supplied gas and the evaporant, plasma, dust, etc. generated in the processing part of the thin film laminated glass substrate flows from the non-processed area side of the thin film laminated glass substrate in the direction of each side parallel to the film surface of the thin film. To suck into,
It is the thin film removal method of a thin film laminated glass substrate.

本発明は、
レーザの走査は、薄膜積層ガラス基板の加工部において薄膜積層ガラス基板の辺部とほぼ平行に往復走査しながら気体の流れの方向と同じ方向へ移動させて、加工部の全面について行う、
前記薄膜積層ガラス基板の薄膜除去方法である。
The present invention
The scanning of the laser is performed on the entire surface of the processing portion by moving in the same direction as the direction of gas flow while reciprocating scanning in parallel with the side portion of the thin film laminated glass substrate in the processing portion of the thin film laminated glass substrate.
It is the thin film removal method of the said thin film laminated glass substrate.

本発明は、
平均出力が200W以下のパルスレーザ発振器より出射されたレーザを使用して薄膜の不要部分を除去する、
前記薄膜積層ガラス基板の薄膜除去方法である。
The present invention
Removing unnecessary portions of the thin film using a laser emitted from a pulse laser oscillator having an average output of 200 W or less;
It is the thin film removal method of the said thin film laminated glass substrate.

(作用)
本発明に係る薄膜積層ガラス基板用薄膜除去装置の作用を説明する。なお、ここでは、説明で使用する各構成要件に、後述する実施の形態において各部に付与した符号を対応させて付与するが、この符号は、特許請求の範囲の各請求項に記載した符号と同様に、あくまで内容の理解を容易にするためであって、各構成要件の意味を上記各部に限定するものではない。
(Function)
The operation of the thin film removing apparatus for a thin film laminated glass substrate according to the present invention will be described. Here, the constituent elements used in the description are assigned in correspondence with the reference numerals given to the respective parts in the embodiments described later. These reference numerals are the same as the reference numerals described in the claims of the claims. Similarly, it is only for the purpose of facilitating understanding of the contents, and the meaning of each component is not limited to the above-described parts.

薄膜積層ガラス基板用薄膜除去装置において、まず保持部(11)によって薄膜積層ガラス基板(5)をデバイスが設けられている薄膜(51)を下側にして所定の位置に保持する。
次に、薄膜積層ガラス基板(5)の下方において、気体供給部(2)によって薄膜積層ガラス基板(5)の非加工領域側から薄膜(51)の膜面と平行に空気等の気体を供給し、同時に気体吸引部(3)によって、気体供給部(2)で供給された気体と、それを含む周囲の雰囲気を吸い込む。これにより、薄膜積層ガラス基板(5)の下方において、非加工領域である薄膜積層ガラス基板(5)の内側から各辺部の外側へ向かう雰囲気の流れをつくることができる。
In the thin film removal apparatus for thin film laminated glass substrate, first, the thin film laminated glass substrate (5) is held at a predetermined position by the holding unit (11) with the thin film (51) provided with the device facing down.
Next, under the thin film laminated glass substrate (5), gas such as air is supplied in parallel with the film surface of the thin film (51) from the non-processed region side of the thin film laminated glass substrate (5) by the gas supply unit (2). At the same time, the gas supplied by the gas supply unit (2) and the surrounding atmosphere including the gas are sucked by the gas suction unit (3). Thereby, the flow of the atmosphere which goes to the outer side of each side part from the inner side of the thin film laminated glass substrate (5) which is a non-processed area can be created below the thin film laminated glass substrate (5).

次に、この雰囲気の流れを維持した状態で、レーザ走査部(4)によって薄膜積層ガラス基板(5)のガラス板(50)側からガラス板(50)を通し薄膜積層ガラス基板(5)の加工部にレーザを当てて薄膜(51)の不要部分を除去するように走査する。
薄膜(51)においてレーザが当たる加工点においては、レーザの熱によって蒸発物やプラズマ、粉塵等が発生する。これら蒸発物等は、前記流れを維持している雰囲気中に浮遊するか、または重力で下方へ落下する。
Next, while maintaining the flow of this atmosphere, the laser scanning unit (4) passes the glass plate (50) from the glass plate (50) side of the thin film laminated glass substrate (5) to the thin film laminated glass substrate (5). Scanning is performed so as to remove unnecessary portions of the thin film (51) by applying a laser to the processed portion.
At the processing point where the laser strikes in the thin film (51), vapor, plasma, dust, etc. are generated by the heat of the laser. These evaporates and the like float in the atmosphere maintaining the flow or fall downward due to gravity.

蒸発物等のうち下方へ落下するものは、上方にある薄膜積層ガラス基板(5)の薄膜(51)の膜面に付着することはない。また、蒸発物等のうち雰囲気中に浮遊するものは、雰囲気と共に、上方にある薄膜積層ガラス基板(5)の薄膜(51)の膜面と平行に送られ、薄膜(51)に付着することなく薄膜積層ガラス基板(5)の非加工領域側から各辺部の外側へ送られ、外部へ排出される。
このようにして、薄膜積層ガラス基板(5)においてデバイスが設けられている薄膜(51)の不要部分をガラス板(50)から除去することができる。
An evaporating substance that falls downward does not adhere to the film surface of the thin film (51) of the thin film laminated glass substrate (5) located above. In addition, vaporized substances that float in the atmosphere, along with the atmosphere, are sent in parallel with the film surface of the thin film (51) of the thin film laminated glass substrate (5) above and adhere to the thin film (51). Instead, the thin film laminated glass substrate (5) is fed from the non-processed region side to the outside of each side portion and discharged to the outside.
In this manner, unnecessary portions of the thin film (51) on which the device is provided in the thin film laminated glass substrate (5) can be removed from the glass plate (50).

レーザ走査部(4)によるレーザの走査を、ガラス基板(5)の加工部においてガラス基板(5)の辺部とほぼ平行に往復走査しながら気体の流れの方向と同じ方向へ移動させて、加工部の全面について行うようにしてあるものは、上流側の加工点で発生した蒸発物等は、万一下流側で薄膜(51)の膜面に付着したとしても、付着した部分はその後レーザで加工されるので、蒸発物等が付着したまま膜面に残る可能性を排除できる。   The laser scanning by the laser scanning unit (4) is moved in the same direction as the direction of gas flow while reciprocating scanning in parallel with the side of the glass substrate (5) in the processed part of the glass substrate (5), What is performed on the entire surface of the processing part is that even if the evaporant generated at the processing point on the upstream side adheres to the film surface of the thin film (51) on the downstream side, the attached part is subsequently laser Therefore, it is possible to eliminate the possibility that the evaporant or the like remains on the film surface.

レーザ走査部(4)のパルスレーザ発振器(40)の平均出力が200W以下であるものは、加工点において発生する熱を抑えることができるので、ガラス基板(5)にレーザの熱による微細なクラック等の損傷が生じにくいようにすることができる。また、薄膜(51)の加工点の温度上昇を抑制して熱の影響を低減することができるので、加工点における薄膜(51)の気化やプラズマ化を抑制することができ、発生する蒸発物やプラズマ等の量を低減することができる。   When the average output of the pulse laser oscillator (40) of the laser scanning unit (4) is 200 W or less, the heat generated at the processing point can be suppressed, so fine cracks caused by the laser heat on the glass substrate (5) It is possible to make it difficult to cause damage. In addition, since the temperature rise at the processing point of the thin film (51) can be suppressed and the influence of heat can be reduced, vaporization and plasmaization of the thin film (51) at the processing point can be suppressed, and the generated evaporant And the amount of plasma and the like can be reduced.

本発明は、前記構成を備え、次のような効果を有している。
(a)加工点で発生した蒸発物やプラズマ、粉塵等は、ガラス基板の下面側の薄膜の膜面に沿って流れる気体とそれを含む雰囲気によって、非加工領域である薄膜積層ガラス基板の内側から各辺部の外側へ排出することができる。しかも、薄膜積層ガラス基板は薄膜を下側にして保持されて加工されるので、蒸発物等が雰囲気の流れから漏れても重力によって落下したものが薄膜に付着することはない。
これにより、薄膜積層ガラス基板においてデバイスを構成する部分に対する付着をより確実に防止することができるので、デバイスとしての品質を低下させることなく、薄膜積層ガラス基板の周辺部の不要な薄膜をレーザにより除去することができる。
The present invention has the above-described configuration and has the following effects.
(A) Evaporated matter, plasma, dust, etc. generated at the processing point are formed on the inside of the thin film laminated glass substrate which is a non-processed region depending on the gas flowing along the film surface of the thin film on the lower surface side of the glass substrate and the atmosphere containing the gas. To the outside of each side. In addition, since the thin film laminated glass substrate is processed while being held with the thin film facing down, even if the evaporating substance leaks from the atmosphere flow, it does not adhere to the thin film as it falls due to gravity.
As a result, it is possible to more reliably prevent the thin film laminated glass substrate from adhering to the parts constituting the device, so that an unnecessary thin film around the thin film laminated glass substrate can be removed with a laser without deteriorating the quality of the device. Can be removed.

(b)レーザ走査部のパルスレーザ発振器の平均出力が200W以下であるものは、加工点において発生する熱を抑えることができるので、ガラス基板にレーザの熱による微細なクラック等の損傷が生じにくいようにすることができる。また、薄膜の加工点の温度上昇を抑制して熱の影響を低減することができるので、加工点における薄膜の気化やプラズマ化を抑制することができ、発生する蒸発物やプラズマ等の量を低減することができる。 (B) When the average output of the pulse laser oscillator of the laser scanning unit is 200 W or less, the heat generated at the processing point can be suppressed, so that the glass substrate is unlikely to be damaged by fine cracks due to the heat of the laser. Can be. Moreover, since the temperature rise at the processing point of the thin film can be suppressed and the influence of heat can be reduced, vaporization and plasmatization of the thin film at the processing point can be suppressed, and the amount of generated evaporants and plasma can be reduced. Can be reduced.

本発明に係る薄膜積層ガラス基板用薄膜除去装置の一実施の形態を示し使用状態を表した側面視断面説明図。Side surface sectional explanatory drawing which showed one Embodiment of the thin film removal apparatus for thin film laminated glass substrates which concerns on this invention, and represented the use condition. 本発明に係る薄膜積層ガラス基板用薄膜除去装置の一実施の形態を示し使用状態を表した平面視説明図。BRIEF DESCRIPTION OF THE DRAWINGS Plan view explanatory drawing which showed one Embodiment of the thin film removal apparatus for thin film laminated glass substrates which concerns on this invention, and represented the use condition. 薄膜積層ガラス基板におけるレーザによる走査軌跡を示す説明図。Explanatory drawing which shows the scanning locus | trajectory by the laser in a thin film laminated glass substrate.

本発明を図面に示した実施の形態に基づき詳細に説明する。   The present invention will be described in detail based on the embodiments shown in the drawings.

なお、図2は、図示の便宜上、レーザ走査部4の図示を省略している。   In FIG. 2, the laser scanning unit 4 is not shown for convenience of illustration.

薄膜積層ガラス基板用薄膜除去装置Aは、後述する薄膜積層ガラス基板5においてデバイスが設けられている薄膜51のうち、四角形のガラス板50の周辺部(四辺部)にある不要部分をガラス板50から除去する装置であり、台部1、気体供給部2、気体吸引部3及びレーザ走査部4を備えた構造を有している。以下、それぞれについて詳細に説明する。   A thin film removing apparatus A for a thin film laminated glass substrate removes unnecessary portions in the peripheral part (four sides) of the square glass plate 50 of the thin film 51 provided with devices in the thin film laminated glass substrate 5 described later. The apparatus has a structure including a pedestal 1, a gas supply unit 2, a gas suction unit 3, and a laser scanning unit 4. Hereinafter, each will be described in detail.

(台部1)
薄膜積層ガラス基板用薄膜除去装置Aは、平面視で四角形状(長方形状)の台部1を備えている。台部1の上面10は水平になっており、上面10の中央部及び各隅部寄りには合計五箇所に薄膜積層ガラス基板5を載置して保持する受ピン11(保持部)が設けられている。各受ピン11は、薄膜積層ガラス基板5の膜面に損傷を与えないように有機高分子樹脂材料を使用している。各受ピン11の長さは同じに形成されており、本実施の形態では5mmである。なお、保持部としては前記受ピン11の他、薄膜積層ガラス基板5を吸着により保持する吸盤あるいは横方向から挟んで保持する挟持具等を採用することもできる。
(Stand 1)
The thin film removing apparatus A for a thin film laminated glass substrate includes a base 1 having a rectangular shape (rectangular shape) in plan view. The upper surface 10 of the base portion 1 is horizontal, and receiving pins 11 (holding portions) for placing and holding the thin-film laminated glass substrate 5 at a total of five locations are provided near the center and each corner of the upper surface 10. It has been. Each receiving pin 11 uses an organic polymer resin material so as not to damage the film surface of the thin film laminated glass substrate 5. Each receiving pin 11 has the same length, and is 5 mm in the present embodiment. In addition to the receiving pin 11, a suction cup that holds the thin film laminated glass substrate 5 by suction or a holding tool that holds and holds the thin film laminated glass substrate from the lateral direction can also be adopted as the holding portion.

したがって、各受ピン11で保持される薄膜積層ガラス基板5の下側の薄膜51の膜面と上面10との隙間(気体流通部13)の間隔は、同じく5mmとなる。なお、受ピン11の長さは5mmに限定されるものではなく、気体流通部13の必要な間隔に合わせて適宜設定することができ、受ピン11の数や配置も薄膜積層ガラス基板5の形状や大きさに合わせて適宜設定できるものである。   Therefore, the gap (gas flow part 13) between the film surface of the lower thin film 51 and the upper surface 10 held by each receiving pin 11 is also 5 mm. Note that the length of the receiving pins 11 is not limited to 5 mm, and can be set as appropriate according to the required interval of the gas flow part 13, and the number and arrangement of the receiving pins 11 are also the same as those of the thin film laminated glass substrate 5. It can be appropriately set according to the shape and size.

(気体供給部2)
また、上面10において前記中央部の受ピン11を囲む四箇所には、気体供給部2が設けられている。各気体供給部2は、上面10上において水平方向の全周方向に気体(本実施の形態においては空気)を射出することができる噴出部20と、噴出部20に気体を送る給気管21を備えている。なお、各噴出部20は各受ピン11より低くなるように設けられている。
(Gas supply unit 2)
In addition, gas supply portions 2 are provided at four locations surrounding the receiving pin 11 in the central portion on the upper surface 10. Each gas supply unit 2 includes an ejection unit 20 that can eject gas (air in the present embodiment) in a horizontal circumferential direction on the upper surface 10, and an air supply pipe 21 that sends gas to the ejection unit 20. I have. In addition, each ejection part 20 is provided so as to be lower than each receiving pin 11.

これにより、各噴出部20は、各受ピン11で保持される薄膜積層ガラス基板5の下方の気体流通部13において、薄膜積層ガラス基板5の内側(非加工領域となる基板中央部分)から薄膜の膜面と平行に気体を供給することができる。なお、各噴出部20から噴出させる気体は、薄膜積層ガラス基板5中央部分の気体流通部13への粉塵等の流入を防ぐため、高圧の気体(圧縮空気等)を使用している。なお、気体としては、空気の他、例えばアルゴンやヘリウム等、無害で安全な気体を単一で、またはこれらを適宜割合で混合した混合気体として使用することもできる。   Thereby, each ejection part 20 is a thin film from the inside of the thin film laminated glass substrate 5 (the substrate central part which becomes a non-processed region) in the gas flow part 13 below the thin film laminated glass substrate 5 held by each receiving pin 11. Gas can be supplied in parallel with the film surface. In addition, in order to prevent inflow of the dust etc. to the gas distribution | circulation part 13 of the thin film laminated glass substrate 5 center, the gas ejected from each ejection part 20 uses the high pressure gas (compressed air etc.). As the gas, in addition to air, for example, a harmless and safe gas such as argon or helium can be used alone or as a mixed gas in which these are mixed in an appropriate ratio.

(気体吸引部3)
前記台部1は、四辺の側面部12を備えている。各側面部12近傍には、各気体供給部2から供給された気体と、薄膜積層ガラス基板5の加工部で生じた蒸発物やプラズマ、粉塵等を含む雰囲気を薄膜積層ガラス基板5の非加工領域側から薄膜51の膜面と平行に四辺方向へ流れるように吸引する気体吸引部3が設けられている。
(Gas suction part 3)
The said base part 1 is provided with the side part 12 of four sides. In the vicinity of each side surface portion 12, the atmosphere containing the gas supplied from each gas supply unit 2 and the evaporant, plasma, dust, etc. generated in the processing unit of the thin film laminated glass substrate 5 is not processed in the thin film laminated glass substrate 5. A gas suction unit 3 is provided for suctioning from the region side so as to flow in the four directions parallel to the film surface of the thin film 51.

各気体吸引部3は、吸気部30と気体噴射部31で構成されている。各吸気部30は、各側面部12の外側に側面部12ととやや隙間(気体流通部14)を設けて配されている。各吸気部30は、口部がラッパ状に拡がった形状の吸込具301に排気管302がつながれている構造である。各吸気部30は、図2に示すように長辺側の側面部12にはそれぞれ三箇所に設けられ、短辺側の側面部12にはそれぞれ二箇所に設けられている。   Each gas suction part 3 includes an intake part 30 and a gas injection part 31. Each intake part 30 is arranged on the outside of each side part 12 with a slight gap (gas circulation part 14) with the side part 12. Each intake portion 30 has a structure in which an exhaust pipe 302 is connected to a suction tool 301 having a mouth portion that expands in a trumpet shape. As shown in FIG. 2, the intake portions 30 are provided at three locations on the long side surface portion 12, and are provided at two locations on the short side surface portion 12.

前記気体噴射部31は、各側面部12に設けられている。各気体噴射部31は、噴射ノズル311と、噴射ノズル311に気体を送る給気管312を備えている。各噴射ノズル311は、噴射口の幅が各側面部12の幅とほぼ同じ長さになるように設けられており、各噴射ノズル311の噴射方向は各吸込具301へ向けられている。   The gas injection part 31 is provided on each side part 12. Each gas injection unit 31 includes an injection nozzle 311 and an air supply pipe 312 that sends gas to the injection nozzle 311. Each injection nozzle 311 is provided such that the width of the injection port is substantially the same as the width of each side surface portion 12, and the injection direction of each injection nozzle 311 is directed to each suction tool 301.

各気体噴射部31の噴射ノズル311から各吸込具301へ向け気体が高速で噴射されることにより、その周囲の気体は負圧となり(ベルヌーイの法則による)、気体流通部13、14において気体に流れをつくる。この気体により、ガラス基板の加工部で生じた蒸発物やプラズマ、粉塵等を含む雰囲気が取り込まれ、さらに各吸込具301で吸引され、排気管302を通り外部へ排出される。   When the gas is injected at high speed from the injection nozzle 311 of each gas injection unit 31 to each suction tool 301, the surrounding gas becomes negative pressure (according to Bernoulli's law), and the gas flows into the gas circulation units 13 and 14. Create a flow. By this gas, an atmosphere containing evaporant, plasma, dust and the like generated in the processed portion of the glass substrate is taken in, sucked by each suction tool 301, and discharged to the outside through the exhaust pipe 302.

(レーザ走査部4)
レーザ走査部4は、薄膜積層ガラス基板5のガラス板50側からガラスを通し加工部にレーザを当てて薄膜の不要部分を除去するものである。レーザ走査部4は、加工される薄膜積層ガラス基板5の四辺部に対応して、それらの上方四箇所に設けられている。
(Laser scanning unit 4)
The laser scanning unit 4 passes the glass from the glass plate 50 side of the thin film laminated glass substrate 5 and applies a laser to the processing unit to remove unnecessary portions of the thin film. The laser scanning units 4 are provided at four positions above the four sides of the thin film laminated glass substrate 5 to be processed.

各レーザ走査部4は、レーザ発振器40と、光学系の二台のガルバノメータミラー41を備えている。レーザ発振器40は比較的低出力であり、本実施の形態では平均出力200Wのものが採用されている。   Each laser scanning unit 4 includes a laser oscillator 40 and two galvanometer mirrors 41 of an optical system. The laser oscillator 40 has a relatively low output, and an average output of 200 W is employed in this embodiment.

レーザ発振器40に低出力のものを採用することにより、レーザによりガラス基板にクラック等の熱影響による損傷が生じることを防止することができる。また、加工点でのガラス基板の温度上昇を抑制することができ、熱の影響を低減することができ、なおかつ加工時に発生する除去物である薄膜51の気化やプラズマ化を抑制することができる。   By adopting a low-power laser oscillator 40, it is possible to prevent the glass substrate from being damaged due to thermal effects such as cracks. Moreover, the temperature rise of the glass substrate at a processing point can be suppressed, the influence of heat can be reduced, and vaporization and plasmatization of the thin film 51 which is a removed material generated during processing can be suppressed. .

なお、レーザ走査部4は低出力のレーザを用いて加工を行うため、高出力のレーザを用いた場合よりも加工処理能力は低下するので、これを改善するためにレーザのスポット部P(図3参照)の径を微小に絞り、ガルバノメータミラー41によりレーザを高速に走査できるようにして十分な処理能力を発揮できるようにしている。   Since the laser scanning unit 4 performs processing using a low-power laser, the processing capability is lower than when a high-power laser is used. Therefore, in order to improve this, the laser spot P (see FIG. 3) and the galvanometer mirror 41 can scan the laser at high speed so that sufficient processing capability can be exhibited.

(作用)
図1ないし図3を参照して薄膜積層ガラス基板用薄膜除去装置Aの作用及び薄膜積層ガラス基板の薄膜を除去する方法を説明する。
なお、図1、図2における矢印は、気体や雰囲気の流れを表したものである。
(Function)
With reference to FIG. 1 thru | or 3, the effect | action of the thin film removal apparatus A for thin film laminated glass substrates and the method of removing the thin film of a thin film laminated glass substrate are demonstrated.
The arrows in FIGS. 1 and 2 represent the flow of gas or atmosphere.

加工される薄膜積層ガラス基板5は、ガラス板50と、その一方側の表面に積層されておりデバイス(図示省略)が設けられている薄膜51で構成されている。
薄膜積層ガラス基板用薄膜除去装置Aにおいては、まず各受ピン11によって薄膜積層ガラス基板5がデバイスが設けられている薄膜51を下側にして載置保持される。
The thin film laminated glass substrate 5 to be processed is composed of a glass plate 50 and a thin film 51 laminated on one surface thereof and provided with a device (not shown).
In the thin film removal apparatus A for thin film laminated glass substrate, the thin film laminated glass substrate 5 is first placed and held by each receiving pin 11 with the thin film 51 provided with the device facing down.

次に、薄膜積層ガラス基板5の下方において、気体供給部2の噴出部20から気体流通部13に空気が供給される。この空気は、雰囲気と共に薄膜積層ガラス基板5の内側の非加工領域側から薄膜51の膜面と平行に供給される。   Next, air is supplied to the gas circulation part 13 from the ejection part 20 of the gas supply part 2 below the thin film laminated glass substrate 5. The air is supplied in parallel with the film surface of the thin film 51 from the non-processed region side inside the thin film laminated glass substrate 5 together with the atmosphere.

前記空気の供給と同時に、台部1の各側面部12近傍の気体吸引部3によって、気体流通部13、14にある、気体供給部2で供給された気体と、それを含む周囲の雰囲気を吸い込む。これにより、薄膜積層ガラス基板5の下方において、非加工領域である薄膜積層ガラス基板5の内側から各辺部の外側へ向かう雰囲気の流れがつくられる。   Simultaneously with the supply of the air, the gas supplied by the gas supply unit 2 in the gas flow units 13 and 14 and the surrounding atmosphere including the gas in the gas flow units 13 and 14 by the gas suction units 3 in the vicinity of the side surfaces 12 of the base unit 1. Inhale. Thereby, the flow of the atmosphere which goes to the outer side of each side part from the inner side of the thin film laminated glass substrate 5 which is a non-process area | region under the thin film laminated glass substrate 5 is created.

次に、気体流通部13、14における雰囲気の流れを維持した状態で、レーザ走査部4によって薄膜積層ガラス基板5のガラス板50側からガラス板50を通し加工部にレーザを当てて薄膜の不要部分を除去するように走査する。   Next, in a state where the atmosphere flow in the gas flow parts 13 and 14 is maintained, the laser scanning part 4 passes the glass plate 50 from the glass plate 50 side of the thin film laminated glass substrate 5 to apply a laser to the processing part, and no thin film is required. Scan to remove portions.

レーザ走査部4によるレーザの走査は、薄膜積層ガラス基板5の各辺部(四辺部)が同時に行われる。この走査は、図3に示すように薄膜積層ガラス基板5の各辺と平行に行われ、一回の走査により線状の加工を行う。この線状の加工を線幅の分ずらし往復を繰返してレーザを走査していくことで、面状の加工を行うことができる。図3では、各辺における走査範囲が両端部において一部が重なるようにしているが、より広い範囲で重なるようにしてもよいし、薄膜51の残りが生じないのであれば重ならないようにしてもよい。
なお、図3においては、図示の便宜上、走査線間に隙間を設けて表している。
Laser scanning by the laser scanning unit 4 is performed simultaneously on each side (four sides) of the thin film laminated glass substrate 5. This scanning is performed in parallel with each side of the thin film laminated glass substrate 5 as shown in FIG. 3, and linear processing is performed by one scanning. Surface processing can be performed by scanning the laser by repeating the reciprocation by shifting the linear processing by the line width. In FIG. 3, the scanning ranges on each side are partially overlapped at both ends. However, they may be overlapped in a wider range, and if the remaining thin film 51 is not generated, it is not overlapped. Also good.
In FIG. 3, for convenience of illustration, a gap is provided between the scanning lines.

その際、最初のレーザの走査箇所は、対象となる加工部分において薄膜積層ガラス基板5の中央に近い位置とする。その後、レーザの走査する位置を徐々に薄膜積層ガラス基板5の外側に移動させて加工を行う。すなわち、前記加工は、時系列的に薄膜積層ガラス基板5の中心部より徐々に外側に向けて拡張していくことになる。
これによれば、上流側の加工点Pで発生した蒸発物等は、万一下流側で薄膜51の膜面に付着したとしても、付着した部分はその後レーザで加工され、最終的には除去されるので、蒸発物等が付着したまま膜面に残る可能性を排除できる。
At that time, the scanning position of the first laser is set to a position close to the center of the thin film laminated glass substrate 5 in the processing portion to be processed. Thereafter, the laser scanning position is gradually moved to the outside of the thin film laminated glass substrate 5 for processing. That is, the process is gradually extended outward from the center of the thin-film laminated glass substrate 5 in time series.
According to this, even if the evaporant generated at the processing point P on the upstream side adheres to the film surface of the thin film 51 on the downstream side, the adhering part is then processed by the laser and finally removed. Therefore, it is possible to eliminate the possibility that the evaporant or the like remains on the film surface.

レーザは、ガラス板50内部を透過した後、ガラス板50に積層されている薄膜51の加工点Pで吸収され、熱的なエネルギーに変換される。これによって、薄膜51は蒸発物やプラズマ、またはその衝撃による固体状の粉塵となり、ガラス板50から除去される。
その際、発生した蒸発物やプラズマ、粉塵等は、前記流れを維持している雰囲気中に浮遊するか、または重力で薄膜積層ガラス基板5下方へ落下し飛散する。
After passing through the inside of the glass plate 50, the laser is absorbed at the processing point P of the thin film 51 laminated on the glass plate 50 and converted into thermal energy. As a result, the thin film 51 becomes solid dust due to evaporant, plasma, or its impact, and is removed from the glass plate 50.
At that time, the generated evaporant, plasma, dust or the like floats in the atmosphere maintaining the flow, or falls below the thin film laminated glass substrate 5 by gravity and scatters.

なお、レーザ走査部4のパルスレーザ発振器40の平均出力は200Wであるので、加工点Pにおいて発生する熱を抑えることができ、薄膜積層ガラス基板5にレーザの熱による微細なクラック等の損傷が生じにくいようにすることができる。また、薄膜51の加工点Pの温度上昇を抑制して熱の影響を低減することができるので、加工点Pにおける薄膜51の気化やプラズマ化を抑制することができる。   In addition, since the average output of the pulse laser oscillator 40 of the laser scanning unit 4 is 200 W, the heat generated at the processing point P can be suppressed, and the thin laminated glass substrate 5 is damaged by minute cracks and the like due to the heat of the laser. It can be made difficult to occur. Moreover, since the temperature rise of the processing point P of the thin film 51 can be suppressed and the influence of heat can be reduced, vaporization and plasmatization of the thin film 51 at the processing point P can be suppressed.

蒸発物等のうち重力で下方へ落下し飛散するものは、上方にある薄膜積層ガラス基板5の薄膜51の膜面に付着することはない。また、蒸発物等のうち雰囲気中に浮遊するものは、雰囲気に捕捉されて雰囲気と共に、上方にある薄膜積層ガラス基板5の薄膜51の膜面と平行に送られ、薄膜51に付着することなく薄膜積層ガラス基板5の内側の非加工領域側から各辺部の外側へ送られ、気体吸引部3によって外部へ排出される。   Among the evaporates and the like, those that fall and scatter due to gravity do not adhere to the film surface of the thin film 51 of the thin film laminated glass substrate 5 located above. Moreover, what floats in the atmosphere among the evaporates and the like is trapped in the atmosphere and sent together with the atmosphere in parallel with the film surface of the thin film 51 of the thin film laminated glass substrate 5 located above, and does not adhere to the thin film 51. The thin film laminated glass substrate 5 is fed from the non-processed region side inside the thin film laminated glass substrate 5 to the outside of each side portion and is discharged outside by the gas suction unit 3.

このように薄膜積層ガラス基板用薄膜除去装置Aによれば、薄膜積層ガラス基板5においてデバイスが設けられている薄膜51の不要部分をガラス板50から除去することができる。   Thus, according to the thin film removal apparatus A for thin film laminated glass substrates, the unnecessary part of the thin film 51 in which the device is provided in the thin film laminated glass substrate 5 can be removed from the glass plate 50.

なお、本明細書で使用している用語と表現は、あくまでも説明上のものであって、なんら限定的なものではなく、本明細書に記述された特徴およびその一部と等価の用語や表現を除外する意図はない。また、本発明の技術思想の範囲内で、種々の変形態様が可能であるということは言うまでもない。   Note that the terms and expressions used in this specification are merely explanatory and are not limiting at all, and terms and expressions equivalent to the features described in this specification and parts thereof. There is no intention to exclude. It goes without saying that various modifications are possible within the scope of the technical idea of the present invention.

A 薄膜積層ガラス基板用薄膜除去装置
1 台部
10 上面
11 受ピン
12 側面部
13 気体流通部
14 気体流通部
2 気体供給部
20 噴出部
21 給気管
3 気体吸引部
30 吸気部
301 吸込具
302 排気管
31 気体噴射部
311 噴射ノズル
312 給気管
4 レーザ走査部
40 レーザ発振器
41 ガルバノメータミラー
5 薄膜積層ガラス基板
50 ガラス板
51 薄膜
A thin film removal apparatus for thin film laminated glass substrate 1 base part 10 upper surface 11 receiving pin 12 side part 13 gas flow part 14 gas flow part 2 gas supply part 20 ejection part 21 air supply pipe
DESCRIPTION OF SYMBOLS 3 Gas suction part 30 Air intake part 301 Suction tool 302 Exhaust pipe 31 Gas injection part 311 Injection nozzle 312 Supply pipe 4 Laser scanning part 40 Laser oscillator 41 Galvanometer mirror 5 Thin film laminated glass substrate 50 Glass plate 51 Thin film

Claims (5)

薄膜積層ガラス基板(5)においてデバイスが設けられている薄膜(51)の不要部分をガラス板(50)から除去する装置であって、
薄膜(51)を下側にして薄膜積層ガラス基板(5)を保持する保持部(11)と、
薄膜積層ガラス基板(5)のガラス板(50)側からガラス板(50)を通し加工部にレーザを当てて薄膜(51)の不要部分を除去するレーザ走査部(4)と、
薄膜積層ガラス基板(5)の下方において薄膜積層ガラス基板(5)の非加工領域側から薄膜(51)の膜面と平行に気体を供給する気体供給部(2)と、
気体供給部(2)で供給された気体と、薄膜積層ガラス基板(5)の加工部で生じた蒸発物やプラズマ、粉塵等を含む雰囲気を薄膜積層ガラス基板(5)の非加工領域側から薄膜(51)の膜面と平行に各辺方向へ流れるように吸引する気体吸引部(3)と、
を備えている、薄膜積層ガラス基板の薄膜除去装置。
An apparatus for removing unnecessary portions of a thin film (51) provided with devices in a thin film laminated glass substrate (5) from a glass plate (50),
A holding part (11) for holding the thin-film laminated glass substrate (5) with the thin film (51) on the lower side,
A laser scanning section (4) for removing unnecessary portions of the thin film (51) by applying a laser to the processing section through the glass plate (50) from the glass plate (50) side of the thin film laminated glass substrate (5);
A gas supply unit (2) for supplying gas in parallel with the film surface of the thin film (51) from the non-processed region side of the thin film laminated glass substrate (5) below the thin film laminated glass substrate (5),
The atmosphere containing the gas supplied by the gas supply unit (2) and the evaporant, plasma, dust, etc. generated in the processing unit of the thin film laminated glass substrate (5) from the non-processed region side of the thin film laminated glass substrate (5) A gas suction part (3) for sucking so as to flow in the direction of each side parallel to the film surface of the thin film (51);
An apparatus for removing a thin film from a thin film laminated glass substrate.
レーザ走査部(4)によるレーザの走査は、薄膜積層ガラス基板(5)の加工部において薄膜積層ガラス基板(5)の辺部とほぼ平行に往復走査しながら気体の流れの方向と同じ方向へ移動させて、加工部の全面について行うようにしてある、
請求項1記載の薄膜積層ガラス基板の薄膜除去装置。
Laser scanning by the laser scanning unit (4) is performed in the same direction as the gas flow direction while reciprocally scanning the thin film laminated glass substrate (5) in the processed part of the thin film laminated glass substrate (5) substantially parallel to the side of the thin film laminated glass substrate (5). It is moved and performed on the entire surface of the processing part.
The thin film removal apparatus of the thin film laminated glass substrate of Claim 1.
薄膜積層ガラス基板(5)においてデバイスが設けられている薄膜(51)の不要部分をガラス板(50)から除去する方法であって、
薄膜(51)を下側にして薄膜積層ガラス基板(5)を保持し、
薄膜積層ガラス基板(5)の下方において薄膜積層ガラス基板(5)の非加工領域側から薄膜(51)の膜面と平行に気体を供給し、
薄膜積層ガラス基板(5)のガラス板(50)側からガラス板(50)を通し加工部にレーザを当てて薄膜(51)の不要部分を除去し、
供給された気体と、薄膜積層ガラス基板(5)の加工部で生じた蒸発物やプラズマ、粉塵等を含む雰囲気を薄膜積層ガラス基板(5)の非加工領域側から薄膜(51)の膜面と平行に各辺方向へ流れるように吸引する、
薄膜積層ガラス基板の薄膜除去方法。
A method for removing an unnecessary portion of a thin film (51) provided with a device in a thin film laminated glass substrate (5) from a glass plate (50),
Hold the thin film laminated glass substrate (5) with the thin film (51) on the bottom,
Under the thin film laminated glass substrate (5), gas is supplied in parallel with the film surface of the thin film (51) from the non-processed region side of the thin film laminated glass substrate (5),
Applying a laser to the processed part through the glass plate (50) from the glass plate (50) side of the thin film laminated glass substrate (5) to remove unnecessary portions of the thin film (51),
The film surface of the thin film (51) from the non-processed area side of the thin film laminated glass substrate (5) to the atmosphere containing the supplied gas and evaporant, plasma, dust, etc. generated in the processed part of the thin film laminated glass substrate (5) Suction to flow in the direction of each side in parallel with
A method for removing a thin film from a thin film laminated glass substrate.
レーザの走査は、薄膜積層ガラス基板(5)の加工部において薄膜積層ガラス基板(5)の辺部とほぼ平行に往復走査しながら気体の流れの方向と同じ方向へ移動させて、加工部の全面について行う、
請求項3記載の薄膜積層ガラス基板の薄膜除去方法。
The scanning of the laser is performed in the processing part of the thin film laminated glass substrate (5) by moving in the same direction as the gas flow direction while reciprocating and scanning in parallel with the side part of the thin film laminated glass substrate (5). To do the entire surface,
The thin film removal method of the thin film laminated glass substrate of Claim 3.
平均出力が200W以下のパルスレーザ発振器より出射されたレーザを使用して薄膜の不要部分を除去する、
請求項3または4のいずれかに記載の薄膜積層ガラス基板の薄膜除去方法。
Removing unnecessary portions of the thin film using a laser emitted from a pulse laser oscillator having an average output of 200 W or less;
The thin film removal method of the thin film laminated glass substrate in any one of Claim 3 or 4.
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