JP2001111078A - Manufacturing device of thin-film solar cell - Google Patents

Manufacturing device of thin-film solar cell

Info

Publication number
JP2001111078A
JP2001111078A JP29121799A JP29121799A JP2001111078A JP 2001111078 A JP2001111078 A JP 2001111078A JP 29121799 A JP29121799 A JP 29121799A JP 29121799 A JP29121799 A JP 29121799A JP 2001111078 A JP2001111078 A JP 2001111078A
Authority
JP
Japan
Prior art keywords
thin
insulating substrate
solar cell
laser beam
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29121799A
Other languages
Japanese (ja)
Other versions
JP4357668B2 (en
Inventor
Yusuke Fukuoka
裕介 福岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP29121799A priority Critical patent/JP4357668B2/en
Publication of JP2001111078A publication Critical patent/JP2001111078A/en
Application granted granted Critical
Publication of JP4357668B2 publication Critical patent/JP4357668B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)

Abstract

PROBLEM TO BE SOLVED: To keep a processing focus of a laser beam just by a simple constitution. SOLUTION: In a manufacturing device for obtaining a thin-film solar cell by subjecting a thin film laminated on one side of a translucent insulating substrate 1 to the patterning with a laser beam 16 projected into the substrate 1 from the opposite side of the thin-film forming plane, a stage 14 where the substrate 1 is placed is constituted so as to support only a marginal part of the substrate, and a holding mechanism 100 which holds the substrate 1 placed on the stage 14 is arranged, thereby correcting deflection or warp of the substrate 1 placed on the stage 14.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は集積型の薄膜太陽電
池の製造装置に関する。
The present invention relates to an integrated thin-film solar cell manufacturing apparatus.

【0002】[0002]

【従来の技術】薄膜太陽電池は、一般に、ガラス等の透
光性絶縁基板上に、透明導電膜、非晶質半導体光電変換
層(以下、光電変換層という)、及び裏面電極を順に積
層して構成されており、その各層(薄膜)はそれぞれ熱
CVD、プラズマCVD、スパッタリング等の方法で形
成されている。
2. Description of the Related Art In general, a thin-film solar cell comprises a transparent conductive film, an amorphous semiconductor photoelectric conversion layer (hereinafter referred to as a photoelectric conversion layer), and a back electrode laminated in this order on a transparent insulating substrate such as glass. Each layer (thin film) is formed by a method such as thermal CVD, plasma CVD, or sputtering.

【0003】また、集積型の薄膜太陽電池は、レーザビ
ームを用いて直列接続パターンを形成するのが一般的で
ある。その集積構造は、透光性絶縁基板上に透明導電膜
を短冊状に形成し、その上に光電変換層及び裏面電極を
順に積層した後、1つの透明導電膜、光電変換層、裏面
電極からなる単位太陽電池(ユニットセル)の透明導電
膜が、隣接する単位太陽電池の裏面電極と接触する構造
となるように、その両電極及び光電変換層のパターンを
形成するという手順で作製される。
In general, an integrated thin-film solar cell forms a series connection pattern using a laser beam. The integrated structure is such that a transparent conductive film is formed in a strip shape on a light-transmitting insulating substrate, and a photoelectric conversion layer and a back electrode are sequentially stacked thereon. The transparent conductive film of a unit solar cell (unit cell) is formed by a procedure of forming a pattern of both electrodes and a photoelectric conversion layer so that the transparent conductive film has a structure in contact with the back electrode of an adjacent unit solar cell.

【0004】そして、以上のような集積型薄膜太陽電池
の製造において、透光性絶縁基板上に形成した透明導電
膜のパターニング(短冊状に分割)は、YAG基本波レ
ーザ装置からのレーザビームを透光性絶縁基板に薄膜形
成面の反対側から入射させて行っており、また、光電変
換層及び裏面電極のパターニングは、YAG−SHGレ
ーザ装置からのレーザビームを、同様に透光性絶縁基板
に入射させて行っている。このように、光電変換層及び
裏面電極のパターニングにYAG−SHGレーザビーム
を用いている理由は、YAG基本波レーザの第2高調波
であるYAG−SHGレーザビーム(波長:0.532
μm)は、光電変換層の下地にある透明導電膜を透過
し、その透明導電膜に損傷を与えずに加工を行える点に
ある。
[0004] In the manufacture of the integrated thin-film solar cell as described above, patterning (dividing into strips) of a transparent conductive film formed on a light-transmitting insulating substrate is performed by using a laser beam from a YAG fundamental wave laser device. The light-transmissive insulating substrate is made to enter from the opposite side of the thin film forming surface, and the photoelectric conversion layer and the back electrode are patterned by using a laser beam from a YAG-SHG laser device in the same manner. It is made to enter. As described above, the reason why the YAG-SHG laser beam is used for patterning the photoelectric conversion layer and the back surface electrode is that the YAG-SHG laser beam (wavelength: 0.532) which is the second harmonic of the YAG fundamental wave laser is used.
μm) is that the transparent conductive film underlying the photoelectric conversion layer can be processed without damaging the transparent conductive film.

【0005】なお、YAG基本波レーザ装置と、YAG
−SHGレーザ装置とは、発振器並びに光学系がそれぞ
れYAG基本波用、YAG−SHG用であること以外
は、ほぼ同じ装置構成である。
A YAG fundamental wave laser device, a YAG
The -SHG laser device has almost the same device configuration except that the oscillator and the optical system are respectively for YAG fundamental wave and YAG-SHG.

【0006】[0006]

【発明が解決しようとする課題】ところで、薄膜太陽電
池の製造において、レーザビームによるパターニングを
安定した状態で行うには、レーザビームの加工焦点を常
に適正に保つことが望ましい。しかし、実際の場合、ガ
ラス基板等の透光性絶縁基板は、厚みのばらつきと反り
があり、さらに、透光性絶縁基板の大面積化を進めるほ
ど基板の撓みが大きくなるため、レーザビームの加工焦
点を適正値に保つことは簡単でない。
By the way, in the production of a thin film solar cell, it is desirable to always keep the processing focus of the laser beam appropriately in order to perform the patterning with the laser beam in a stable state. However, in practice, a light-transmitting insulating substrate such as a glass substrate has variations in thickness and warpage, and furthermore, the larger the area of the light-transmitting insulating substrate is, the greater the deflection of the substrate becomes. It is not easy to keep the processing focus at an appropriate value.

【0007】また、薄膜太陽電池の製造においては、透
過性絶縁基板を支持するステージがレーザビーム照射に
より損傷することを避けるために、透過性絶縁基板の周
縁部のみを支持する構造のステージが用いられている
が、このようなステージを用いても、透過性絶縁基板の
周縁部を支持する部分にレーザビームが当たって損傷し
てしまい、その支持部分の機械的精度を維持できなくな
るため、加工焦点に関する問題は依然として残る。ま
た、透過性絶縁基板の周縁部のみを支持する場合、透過
性絶縁基板が大型化すると、透過性絶縁基板が撓むか、
あるいは反ってしまい、適正なレーザビームの加工焦点
が得られなくなる。
In the manufacture of a thin-film solar cell, a stage having a structure that supports only the periphery of the transparent insulating substrate is used in order to prevent the stage supporting the transparent insulating substrate from being damaged by laser beam irradiation. However, even if such a stage is used, the portion supporting the periphery of the transparent insulating substrate will be damaged by the laser beam, and the mechanical accuracy of the supporting portion will not be maintained. The focus problem still remains. In addition, when supporting only the peripheral portion of the transparent insulating substrate, if the size of the transparent insulating substrate increases, the transparent insulating substrate bends,
Or, it warps, and it becomes impossible to obtain a proper processing focus of the laser beam.

【0008】ここで、薄膜太陽電池の製造において、レ
ーザビームでパターニングされた薄膜は加工残渣となっ
て飛散する。この加工残滓は、非常に微細な粉塵であ
り、これをそのまま放置することは作業環境を悪化させ
る上に、加工残滓はレーザ装置の光学系をはじめとする
設備や製品に悪影響を与える。
Here, in the manufacture of a thin-film solar cell, a thin film patterned by a laser beam scatters as a processing residue. This processing residue is very fine dust. Leaving it as it is degrades the working environment, and the processing residue adversely affects equipment and products including the optical system of the laser device.

【0009】本発明は、上記したような実情に鑑みてな
されたもので、レーザビームの加工焦点を常に適正に保
つことのできる機構を備えた薄膜太陽電池の製造装置の
提供を目的とする。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a thin-film solar cell manufacturing apparatus provided with a mechanism capable of always keeping the processing focus of a laser beam appropriately.

【0010】[0010]

【課題を解決するための手段】本発明の製造装置は、透
光性絶縁基板の片面に積層した薄膜を、その薄膜形成面
の反対側から透光性絶縁基板に入射するレーザビームで
パターニングして薄膜太陽電池を得る製造装置におい
て、透光性絶縁基板の周縁部のみを支持するステージ
と、このステージに置かれた透光性絶縁基板を平坦な状
態に保持する保持機構を備えていることによって特徴づ
けられる。
According to the manufacturing apparatus of the present invention, a thin film laminated on one surface of a light-transmitting insulating substrate is patterned by a laser beam incident on the light-transmitting insulating substrate from the side opposite to the thin film forming surface. A manufacturing apparatus for obtaining a thin film solar cell by using a stage that supports only the periphery of the light-transmitting insulating substrate and a holding mechanism that holds the light-transmitting insulating substrate placed on this stage in a flat state Characterized by

【0011】本発明の製造装置によれば、透過性絶縁基
板が置かれるステージを、基板周縁部のみを支持する構
造としているので、レーザビーム照射によりステージ表
面が損傷することを防止することができる。また、透過
性絶縁基板を平坦な状態に保持する保持機構を設けてい
るので、ステージ上に置いた透過性絶縁基板の撓み・反
りを矯正することができ、常に適正な加工焦点を得るこ
とができる。
According to the manufacturing apparatus of the present invention, since the stage on which the transmissive insulating substrate is placed is configured to support only the peripheral portion of the substrate, it is possible to prevent the stage surface from being damaged by laser beam irradiation. . In addition, since a holding mechanism for holding the transparent insulating substrate in a flat state is provided, it is possible to correct bending and warping of the transparent insulating substrate placed on the stage, and to always obtain an appropriate processing focus. it can.

【0012】ここで、本発明の製造装置に用いる保持機
構は、透過性絶縁基板と接触する部分が、樹脂などの軟
質材料で構成されていることが好ましい。
Here, in the holding mechanism used in the manufacturing apparatus of the present invention, it is preferable that a portion in contact with the transparent insulating substrate is made of a soft material such as a resin.

【0013】また、保持機構に、透光性絶縁基板を支持
する高さを調整するための高さ調整機構を設けておけ
ば、精度の高い加工焦点を得ることができる。
If the holding mechanism is provided with a height adjusting mechanism for adjusting the height for supporting the translucent insulating substrate, it is possible to obtain a processing focus with high accuracy.

【0014】本発明の製造装置において、ステージ上に
置かれた透光性絶縁基板の上面側周縁部に、レーザビー
ムを遮断するためのマスクを設けておけば、レーザビー
ムの照射が避けられない部分つまりステージの基板周縁
支持部の損傷を防止することができる。また、この場
合、マスクを用いて透光性絶縁基板の周縁部を保持する
ように構成すれば、設備の簡略化をはかることができ
る。
In the manufacturing apparatus of the present invention, if a mask for blocking a laser beam is provided on the peripheral edge on the upper surface side of the light-transmitting insulating substrate placed on the stage, laser beam irradiation is inevitable. It is possible to prevent the portion, that is, the peripheral portion of the substrate of the stage, from being damaged. Further, in this case, if the peripheral portion of the light-transmitting insulating substrate is held by using a mask, the facility can be simplified.

【0015】本発明の製造装置において、レーザビーム
のパターニングにより発生する加工残滓を、透光性絶縁
基板の下方側から集塵する手段(集塵機)を設けておけ
ば、作業領域での加工残滓の飛散を減少させることがで
きる。
In the manufacturing apparatus of the present invention, if a means (dust collector) for collecting the processing residue generated by the patterning of the laser beam from the lower side of the translucent insulating substrate is provided, the processing residue in the working area is provided. Scattering can be reduced.

【0016】[0016]

【発明の実施の形態】本発明の実施の形態を、以下、図
面に基づいて説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0017】図1は集積型の薄膜太陽電池の外観図、図
2はその薄膜太陽電池の模式的断面図であり、以下、こ
の図1及び図2を参照しつつ、薄膜太陽電池の製造方法
の一例を説明する。
FIG. 1 is an external view of an integrated thin-film solar cell, and FIG. 2 is a schematic cross-sectional view of the thin-film solar cell. Hereinafter, a method for manufacturing a thin-film solar cell will be described with reference to FIGS. An example will be described.

【0018】まず、ガラス基板(透光性絶縁基板)1と
して、透明導電膜があらかじめ形成されたものを用い
る。このガラス基板1には、透明導電膜2がガラス板の
片側表面と周端面の全面に形成されており、その透明導
電膜2を、YAG基本波レーザビームを用いてパターン
ニングすることにより、第1の開溝7を形成(スクライ
ブ)して、透明導電膜2を複数の短冊10・・10に分離
する。この後、ガラス基板1を純水で洗浄して光電変換
層3を形成する。この光電変換層3は、Hp層、Hi
層、Hn層からなり、合計の厚みは100nmから60
0nm程度である。
First, a glass substrate (light-transmitting insulating substrate) 1 on which a transparent conductive film is formed in advance is used. On the glass substrate 1, a transparent conductive film 2 is formed on the entire surface of one side surface and the peripheral end surface of the glass plate, and the transparent conductive film 2 is patterned by using a YAG fundamental wave laser beam. A single groove 7 is formed (scribed) to divide the transparent conductive film 2 into a plurality of strips 10. Thereafter, the glass substrate 1 is washed with pure water to form the photoelectric conversion layer 3. The photoelectric conversion layer 3 includes an Hp layer, a Hi layer,
Layer, a Hn layer, and the total thickness is 100 nm to 60 nm.
It is about 0 nm.

【0019】次に、レーザビームを用いて光電変換層3
のパターニングを行って第2の開溝8を形成する。この
第2の開溝8は、第1の開溝7から所定距離だけ離れた
位置に、50μm〜100μm程度の幅で形成する。な
お、この第2の開溝8の形成に用いるレーザビームは、
透明導電膜2への影響を避けるため、透明導電膜2に対
する透過性が良好なSHG−YAGレーザビーム等を使
用する。
Next, the photoelectric conversion layer 3 is formed using a laser beam.
Is performed to form a second groove 8. The second groove 8 is formed at a position separated from the first groove 7 by a predetermined distance with a width of about 50 μm to 100 μm. The laser beam used to form the second groove 8 is:
In order to avoid the influence on the transparent conductive film 2, an SHG-YAG laser beam or the like having good transparency to the transparent conductive film 2 is used.

【0020】以上の溝加工が完了した後、透明導電膜4
及び裏面電極5を形成する。透明導電膜4には比抵抗が
小さくて透光性が高いZnOあるいはITOを用いてお
り、また、裏面電極5には反射率の高い金属であるAl
やAgを用いている。なお、透明導電膜4の膜厚は50
nm〜200nm程度、裏面電極5の膜厚は500nm
〜1μm程度である。
After the above groove processing is completed, the transparent conductive film 4
And a back electrode 5 are formed. The transparent conductive film 4 is made of ZnO or ITO having low specific resistance and high translucency, and the back electrode 5 is made of Al which is a metal having high reflectivity.
And Ag are used. The thickness of the transparent conductive film 4 is 50
about 200 nm, and the thickness of the back electrode 5 is 500 nm.
〜1 μm.

【0021】そして、裏面電極5上にレジスト層6とな
る樹脂層を数μmから数十μmの厚さで塗布し、乾燥炉
等において乾燥させる。そのレジスト層6の塗布には、
スプレー方式、スピンコーターなどを採用する。次い
で、SHG−YAGレーザビームを用いて、第3の開溝
9を、第2の開溝8から所定距離だけ離れた位置に、5
0μm〜100μm程度の幅で形成することによって、
図2に示す構造の集積型の薄膜太陽電池を得る。なお、
このような構造において透明導電膜4及びレジスト膜6
は省略しても構わない。
Then, a resin layer to be the resist layer 6 is applied on the back electrode 5 with a thickness of several μm to several tens μm and dried in a drying furnace or the like. In applying the resist layer 6,
Adopt spray method, spin coater, etc. Next, using a SHG-YAG laser beam, the third groove 9 is moved to a position away from the second groove 8 by a predetermined distance, and
By forming with a width of about 0 μm to 100 μm,
An integrated thin-film solar cell having the structure shown in FIG. 2 is obtained. In addition,
In such a structure, the transparent conductive film 4 and the resist film 6
May be omitted.

【0022】次に、本発明の製造装置の実施形態を図3
〜図6を参照しつつ説明する。この例の製造装置は、レ
ーザ発振器15、ガラス基板1が置かれるステージ1
4、所定のスクライブを行うためにステージ14を2次
元方向に移動するXテーブル12及びYテーブル13、
これらを支える架台11などを主体として構成されてお
り、ステージ14にガラス基板1を、薄膜形成面を下に
向けた姿勢で載せ、レーザ発振器15からのレーザビー
ム16をガラス基板1に照射しながら、Xテーブル12
及びYテーブル13を駆動することによって、ガラス基
板1に積層した薄膜をパターニングすることができる。
この例では、レーザ発振器15として、YAG基本波レ
ーザ装置とYAG−SHGレーザ装置が用いられる。
Next, an embodiment of the manufacturing apparatus of the present invention is shown in FIG.
This will be described with reference to FIGS. The manufacturing apparatus of this example includes a laser oscillator 15 and a stage 1 on which the glass substrate 1 is placed.
4. an X table 12 and a Y table 13 for moving the stage 14 in a two-dimensional direction to perform a predetermined scribe;
The glass substrate 1 is mounted on a stage 14 with the thin film forming surface facing down, and a laser beam 16 from a laser oscillator 15 is applied to the glass substrate 1 while the glass substrate 1 is placed on the stage 14. , X table 12
By driving the Y table 13, the thin film laminated on the glass substrate 1 can be patterned.
In this example, a YAG fundamental wave laser device and a YAG-SHG laser device are used as the laser oscillator 15.

【0023】なお、図3〜図6には、薄膜太陽電池の製
造装置において、一般に取付けられているマスク機構等
の記載は省略している。
In FIGS. 3 to 6, the description of the mask mechanism and the like generally attached to the thin-film solar cell manufacturing apparatus is omitted.

【0024】さて、この実施形態の製造装置において
は、ガラス基板1を支持する構造に特徴がある。その詳
細を以下に説明する。
The manufacturing apparatus of this embodiment is characterized by a structure for supporting the glass substrate 1. The details will be described below.

【0025】まず、この実施形態では、図4に示すよう
に、ステージ14に、くり抜き凹部14aを設けて、ガ
ラス基板1の周縁部のみを支持する構造としている。こ
のような構造を採用しているのは、ステージ14の表面
にレーザビームが照射された場合、そのビーム強度によ
ってはステージ材料そのものに加工損傷が加わる点、及
び、透明導電膜2あるいは光電変換層3(もしくは、そ
れらに加えて裏面電極5等)をパターニングした際に発
生する加工残滓が、ステージ14の表面に付着して、そ
のステージ表面の平滑性が損なわれることを避けるため
である。
First, in this embodiment, as shown in FIG. 4, the stage 14 is provided with a hollow 14a to support only the peripheral edge of the glass substrate 1. Such a structure is employed because, when the surface of the stage 14 is irradiated with a laser beam, the stage material itself is damaged depending on the beam intensity, and the transparent conductive film 2 or the photoelectric conversion layer This is to prevent processing residues generated when patterning 3 (or the back electrode 5 or the like in addition thereto) from adhering to the surface of the stage 14 and impairing the smoothness of the stage surface.

【0026】ここで、ステージ14を図4に示すような
構造として、ガラス基板1の周縁部のみを支持するよう
にした場合、ガラス基板1が大型化すると、ガラス基板
1に、図6の2点鎖線で示すような撓み25が生じた
り、あるいはガラス基板1が反ってしまうことがあり、
このような状態になると、適正なレーザビーム加工焦点
が得られなくなる。そこで、この実施形態では、ステー
ジ14のくり抜き凹部14a内に2つの保持機構100
を設け、これら保持機構100によって、ガラス基板1
の撓み・反りを矯正し、ガラス基板1を平坦な状態に保
持することにより、常に適正なレーザビーム加工焦点が
得られるようにしている。
Here, when the stage 14 is structured as shown in FIG. 4 so as to support only the peripheral portion of the glass substrate 1, when the size of the glass substrate 1 increases, the glass substrate 1 The bending 25 as shown by the chain line may occur, or the glass substrate 1 may be warped,
In such a state, an appropriate laser beam processing focus cannot be obtained. Therefore, in this embodiment, two holding mechanisms 100 are provided in the hollow 14 a of the stage 14.
Are provided, and the glass substrate 1 is
By correcting the deflection and warpage of the glass substrate 1 and keeping the glass substrate 1 in a flat state, an appropriate laser beam processing focus can be always obtained.

【0027】保持機構100は、図6に示すように、脚
部18、基板支持部19及び高さ調整ネジ20を組み合
わせたもので、高さ調整ネジ20の操作により、脚部1
8の底面から基板支持部19の上端までの高さ、つまり
ガラス基板1の保持高さを微調整することができる。な
お、保持機構100は、レーザビームによるパターニン
グ部分を避け、基板支持部19にレーザビーム16が照
射されないような位置を選んで設置する。
As shown in FIG. 6, the holding mechanism 100 is a combination of a leg 18, a substrate support 19 and a height adjusting screw 20.
The height from the bottom surface of the substrate 8 to the upper end of the substrate supporting portion 19, that is, the holding height of the glass substrate 1 can be finely adjusted. The holding mechanism 100 avoids the patterning portion by the laser beam and selects and installs a position where the laser beam 16 is not irradiated to the substrate support 19.

【0028】以上の構造の保持機構100において、基
板支持部19は、透明導電膜2あるいは裏面電極5の膜
面に直接接触するので、基板支持部19の材質に硬質の
金属等を用いると、これらの薄膜面に損傷を与える恐れ
がある。薄膜面が損傷した場合、起電力が生じない等の
電気的特性に悪影響を与え、また外観不良となる恐れが
あるので、基板支持部19には、薄膜面を損傷しないよ
うな軟質材料を用いる必要がある。具体的には、四弗化
テフロン等の樹脂が挙げられる。なお、四弗化テフロン
製の基板支持部19を用いた場合、薄膜面に損傷を与え
ることなく加工を行えることが可能であった。
In the holding mechanism 100 having the above structure, the substrate support 19 is in direct contact with the transparent conductive film 2 or the film surface of the back electrode 5. There is a risk of damaging these thin film surfaces. If the thin film surface is damaged, it may adversely affect electrical characteristics such as generation of no electromotive force and may result in poor appearance. Therefore, a soft material that does not damage the thin film surface is used for the substrate support 19. There is a need. Specifically, a resin such as Teflon tetrafluoride is used. When the substrate support 19 made of Teflon tetrafluoride was used, it was possible to perform processing without damaging the thin film surface.

【0029】ここで、レーザビームを用いた加工におい
ては、レーザビームを安定して発振させるために、加工
中においてレーザ発振器の発振を停止しないという加工
法が一般的であり、本実施形態においても、同様にレー
ザビームを発振したままの状態を維持して加工を行う。
このため、短冊10から短冊10への移動過程において
もレーザビームは発振状態にあり、ガラス基板1の周縁
部にもレーザビーム16が照射され、ステージ14の基
板周縁支持部17(図4)の表面が損傷を受けることに
なる。これを防止するため、本実施形態では、図5及び
図6に示すように、ガラス基板1の上面側周縁部を覆う
マスク21、22を設けている。
Here, in processing using a laser beam, a processing method in which oscillation of a laser oscillator is not stopped during processing in order to stably oscillate the laser beam is common. Similarly, processing is performed while maintaining the state in which the laser beam is oscillated.
Therefore, the laser beam is in an oscillating state even in the process of moving from the strip 10 to the strip 10, and the laser beam 16 is also applied to the periphery of the glass substrate 1, and the laser beam 16 is applied to the substrate periphery support 17 (FIG. 4) of the stage 14. The surface will be damaged. In order to prevent this, in the present embodiment, as shown in FIGS. 5 and 6, masks 21 and 22 are provided to cover the peripheral edge of the upper surface of the glass substrate 1.

【0030】このようにマスク21、22を設けておく
ことにより、ガラス基板1の周縁部に向けてレーザビー
ムが進行しても、その進行がマスク21、22によって
遮断されるので、ステージ14の基板周縁支持部17の
表面が損傷を受けることがなく、レーザビーム加工焦点
に影響が及ぶことがなくなる。
By providing the masks 21 and 22 in this manner, even if the laser beam advances toward the peripheral portion of the glass substrate 1, the progress is interrupted by the masks 21 and 22, so that the stage 14 The surface of the substrate peripheral supporting portion 17 is not damaged, and the laser beam processing focus is not affected.

【0031】なお、この例では、マスク21、22にシ
リンダ23を組み合わせて、それらマスク21、22
が、ガラス基板1の周縁部を押さえるホルダとして機能
するように構成している。
In this example, the cylinders 23 are combined with the masks 21 and 22 so that the masks 21 and 22 are combined.
However, it is configured to function as a holder for holding down the peripheral edge of the glass substrate 1.

【0032】また、レーザビームを用いた加工におい
て、レーザビームでパターニングされた薄膜は微粒子状
の加工残滓24となって飛散する(図6参照)。これを
放置することは作業環境を悪化させる上に、光学系の汚
染、製品の汚染の原因ともなり好ましくない。そこで、
本実施形態では、図6に示すように、ステージ14のく
り抜き凹部14aの底部中央に連通する集塵ダクト26
を設置し、この集塵ダクト26に集塵機27を接続し
て、パターニング時に発生する加工残滓24を回収する
という方式を採用しており、このような集塵システムに
より、作業領域におる加工残滓の飛散を減少させること
ができる。
In the processing using the laser beam, the thin film patterned by the laser beam is scattered as fine processing residues 24 (see FIG. 6). Leaving it undesirably deteriorates the working environment and causes contamination of the optical system and the product, which is not preferable. Therefore,
In the present embodiment, as shown in FIG. 6, a dust collection duct 26 communicating with the center of the bottom of the hollow portion 14a of the stage 14 is provided.
Is installed, and a dust collector 27 is connected to the dust collection duct 26 to collect the processing residue 24 generated at the time of patterning. By such a dust collection system, the processing residue in the work area is removed. Scattering can be reduced.

【0033】[0033]

【発明の効果】以上説明したように、本発明の薄膜太陽
電池の製造装置によれば、透光性絶縁基板が置かれるス
テージを、基板周縁部のみを支持する構造とするととも
に、そのステージに置かれた透光性絶縁基板を平坦に保
持する保持機構を設けているので、簡単の構成のもと
に、レーザビームの加工焦点を適正値に保つことがで
き、常に安定したパターニングを実現できる。
As described above, according to the apparatus for manufacturing a thin-film solar cell of the present invention, the stage on which the translucent insulating substrate is placed has a structure that supports only the peripheral portion of the substrate, and the stage has Since a holding mechanism that holds the placed translucent insulating substrate flat is provided, the processing focus of the laser beam can be kept at an appropriate value under a simple configuration, and stable patterning can always be realized. .

【0034】本発明の薄膜太陽電池の製造装置におい
て、保持機構には、透光性絶縁基板を支持する高さを調
整するための高さ調整機構を設けておけば、精度の高い
加工焦点を得ることができる。
In the apparatus for manufacturing a thin-film solar cell according to the present invention, if the holding mechanism is provided with a height adjusting mechanism for adjusting the height for supporting the translucent insulating substrate, a highly accurate processing focus can be obtained. Obtainable.

【0035】本発明の薄膜太陽電池の製造装置におい
て、ステージ上に置かれた透光性絶縁基板の上面側周縁
部に、レーザビームを遮断するためのマスクを設けてお
けば、ステージの基板周縁支持部の損傷を防止すること
ができる。また、この場合、マスクを用いて透光性絶縁
基板の周縁部を保持するように構成すれば、設備の簡略
化をはかることができる。
In the apparatus for manufacturing a thin-film solar cell according to the present invention, if a mask for blocking a laser beam is provided at the peripheral edge on the upper surface side of the light-transmitting insulating substrate placed on the stage, the peripheral edge of the substrate of the stage can be provided. Damage to the support can be prevented. Further, in this case, if the peripheral portion of the light-transmitting insulating substrate is held by using a mask, the facility can be simplified.

【0036】本発明の薄膜太陽電池の製造装置におい
て、レーザビームのパターニングにより発生する加工残
滓を、透光性絶縁基板の下方側から集塵するように構成
しておけば、作業領域での加工残滓の飛散を減少させる
ことができ、これにより作業環境を保全することができ
るとともに、設備・製品への加工残滓の付着による悪影
響を低減することができる。
In the apparatus for manufacturing a thin-film solar cell according to the present invention, if processing residue generated by laser beam patterning is configured to be collected from the lower side of the light-transmitting insulating substrate, processing in the work area can be performed. Scattering of the residue can be reduced, whereby the working environment can be preserved, and adverse effects due to the adhesion of the processing residue to equipment and products can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】集積型の薄膜太陽電池の外観を示す平面図
(A)及び側面図(B)である。
FIG. 1 is a plan view (A) and a side view (B) showing the appearance of an integrated thin-film solar cell.

【図2】集積型の薄膜太陽電池の構造を模式的に示す断
面図である。
FIG. 2 is a cross-sectional view schematically illustrating the structure of an integrated thin-film solar cell.

【図3】本発明の実施形態の要部構造を模式的に示す斜
視図である。
FIG. 3 is a perspective view schematically showing a main structure of the embodiment of the present invention.

【図4】本発明の実施形態に用いるステージの構造を模
式的に示す斜視図である。
FIG. 4 is a perspective view schematically showing a structure of a stage used in the embodiment of the present invention.

【図5】本発明の実施形態に適用するマスクを模式的に
示す斜視図である。
FIG. 5 is a perspective view schematically showing a mask applied to the embodiment of the present invention.

【図6】本発明の実施形態に用いるステージの構造を模
式的に示す断面図である。
FIG. 6 is a cross-sectional view schematically showing a structure of a stage used in the embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 ガラス基板(透光性絶縁基板) 2 透明導電膜 3 光電変換層(非晶質半導体光電変換層) 4 透明導電膜 5 裏面電極 6 レジスト 7 開溝 8 開溝 9 開溝 10 短冊 11 架台 12 Xテーブル 13 Yテーブル 14 ステージ 15 レーザ発振器 16 レーザビーム 17 基板周縁支持部 100 保持機構 18 脚部 19 基板支持部 20 高さ調整ネジ 21,22 マスク 23 シリンダ 24 加工残滓 25 撓み 26 集塵ダクト 27 集塵機 REFERENCE SIGNS LIST 1 glass substrate (translucent insulating substrate) 2 transparent conductive film 3 photoelectric conversion layer (amorphous semiconductor photoelectric conversion layer) 4 transparent conductive film 5 back electrode 6 resist 7 open groove 8 open groove 9 open groove 10 strip 11 mount 12 X table 13 Y table 14 Stage 15 Laser oscillator 16 Laser beam 17 Substrate peripheral support 100 Holding mechanism 18 Leg 19 Substrate support 20 Height adjusting screw 21, 22 Mask 23 Cylinder 24 Processing residue 25 Flexure 26 Dust collector 27 Dust collector

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 透光性絶縁基板の片面に積層した薄膜
を、その薄膜形成面の反対側から透光性絶縁基板に入射
するレーザビームでパターニングして薄膜太陽電池を得
る製造装置において、透光性絶縁基板の周縁部のみを支
持するステージと、このステージに置かれた透光性絶縁
基板を平坦な状態に保持する保持機構とを備えているこ
とを特徴とする薄膜太陽電池の製造装置。
An apparatus for manufacturing a thin-film solar cell by patterning a thin film laminated on one surface of a light-transmitting insulating substrate with a laser beam incident on the light-transmitting insulating substrate from the side opposite to the thin-film forming surface. An apparatus for manufacturing a thin-film solar cell, comprising: a stage that supports only a peripheral portion of a light-insulating substrate; and a holding mechanism that holds the light-transmitting insulating substrate placed on the stage in a flat state. .
【請求項2】 保持機構は、透光性絶縁基板の薄膜形成
面に接触する部分が軟質材料で構成されていることを特
徴とする請求項1記載の薄膜太陽電池の製造装置。
2. The thin-film solar cell manufacturing apparatus according to claim 1, wherein the holding mechanism has a portion in contact with the thin-film forming surface of the light-transmitting insulating substrate made of a soft material.
【請求項3】 保持機構には、透光性絶縁基板を保持す
る高さを調整するための高さ調整機構が設けられている
ことを特徴とする請求項1または2記載の薄膜太陽電池
の製造装置。
3. The thin-film solar cell according to claim 1, wherein the holding mechanism is provided with a height adjusting mechanism for adjusting a height at which the transparent insulating substrate is held. manufacturing device.
【請求項4】 ステージ上に置かれた透光性絶縁基板の
上面側周縁部に、レーザビームを遮断するためのマスク
が設けられていることを特徴とする請求項1、2または
3記載の薄膜太陽電池の製造装置。
4. The mask according to claim 1, wherein a mask for blocking a laser beam is provided on a peripheral edge of an upper surface side of the light-transmitting insulating substrate placed on the stage. Equipment for manufacturing thin-film solar cells.
【請求項5】 透光性絶縁基板の周縁部を上記マスクで
保持するように構成されていることを特徴とする請求項
4記載の薄膜太陽電池の製造装置。
5. The thin-film solar cell manufacturing apparatus according to claim 4, wherein a peripheral portion of the light-transmitting insulating substrate is held by the mask.
【請求項6】 レーザビームのパターニングにより発生
する加工残滓を集塵する手段を備えていることを特徴と
する請求項1、2、3または4記載の薄膜太陽電池の製
造装置。
6. The thin-film solar cell manufacturing apparatus according to claim 1, further comprising means for collecting processing residues generated by laser beam patterning.
JP29121799A 1999-10-13 1999-10-13 Thin film solar cell manufacturing equipment Expired - Fee Related JP4357668B2 (en)

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