TW201414561A - Laser scribing system - Google Patents

Laser scribing system Download PDF

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Publication number
TW201414561A
TW201414561A TW102121965A TW102121965A TW201414561A TW 201414561 A TW201414561 A TW 201414561A TW 102121965 A TW102121965 A TW 102121965A TW 102121965 A TW102121965 A TW 102121965A TW 201414561 A TW201414561 A TW 201414561A
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Taiwan
Prior art keywords
scribing
optical
laser
substrate
scribe
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TW102121965A
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Chinese (zh)
Inventor
Sergej Ristau
Dennis Kiefer
Thomas Witte
Andre Gahler
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Tel Solar Ag
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/042Automatically aligning the laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/16Composite materials, e.g. fibre reinforced
    • B23K2103/166Multilayered materials
    • B23K2103/172Multilayered materials wherein at least one of the layers is non-metallic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Abstract

A laser scribing system for removing portions of a thin film layer positioned on a large-area substrate is provided. The system includes a source laser, a diffractive optical element configured to produce one or more optical scribing beams from a laser beam provided by the source laser, a blocking element, a scattering element, or a combination thereof, the blocking element and the scattering element being positioned between the diffractive optical element and the large-area substrate and configured to block one or more portions of unwanted diffracted beams, one or more of the optical scribing beams, or a combination thereof, focusing optics configured to focus the optical scribing beams, and a control system configured to dynamically position the optical scribing beams with respect to the substrate and control the source laser, an alignment and spacing of the diffractive optical element, the blocking element, the scanning element, or the combination thereof, and the focusing optics.

Description

雷射劃線系統 Laser marking system

本發明關於雷射劃線系統,且尤其關於用以製造大規模薄膜太陽能電池之雷射劃線系統。再者,本發明關於用以將光伏打裝置分割成複數分段之雷射劃線系統的用法。 This invention relates to laser scribing systems, and more particularly to laser scribing systems for fabricating large scale thin film solar cells. Furthermore, the present invention relates to the use of a laser scribing system for dividing a photovoltaic device into a plurality of segments.

雷射系統已被用於劃刻各種材料並用於將半導體晶圓切割成獨立的構件。現存的雷射劃線系統一般在小規模裝置上操作且不需要穿過大面積之基板。 Laser systems have been used to scribe various materials and to cut semiconductor wafers into individual components. Existing laser scribing systems typically operate on small scale devices and do not require passage through large areas of the substrate.

然而,在薄膜光伏打電池之領域中,必須處理非常大的基板(為至少約0.75平方公尺之等級)。此等大型基板對基板和雷射定位、校準以及有效地形成劃刻線上造成許多後勤方面的困難。通常情況下,數個雷射光束係用於形成劃刻線。 However, in the field of thin film photovoltaic cells, very large substrates (of at least about 0.75 square meters) must be processed. These large substrates create many logistical difficulties for substrate and laser positioning, calibration, and efficient formation of scribe lines. Typically, several laser beams are used to form the scribe line.

此外,雷射劃線系統中所有元件之間的協調,從雷射源到光學系統,到基板之移動和任何雷射頭之移動皆須精確且迅速地控制,以促進高效率的處理產量。 In addition, coordination between all components in a laser scribing system, from laser source to optical system, to substrate movement and movement of any laser head, must be accurately and quickly controlled to promote efficient processing throughput.

此外,當使用多光束雷射劃線系統時,後續之劃線必須與先前的劃線精確地對齊,以產生能分割裝置之期望的膜切割。 Moreover, when a multi-beam laser scribing system is used, the subsequent scribe lines must be precisely aligned with the previous scribe lines to produce the desired film cut of the segmentable device.

劃線位置的主動控制已在文獻中往往以用語「動態劃線對齊(DSA)」加以描述。相對於以靜態的方式預先定義的劃線佈局,DSA的概念測量先前的劃刻線,以判定相鄰線之確實的目標位置,從而補償先前的劃刻線的目標佈局之任何偏差,因此可減少劃線偏離。此類型的動態劃線對齊對雷射劃線系統構成許多挑戰。劃線系統必須滿足量產中之嚴格的節 拍時間(takt time)目標(大致為完成兩個連續的光伏打單元所必須經過之時間量,以滿足需求)。因此DSA必須發生在不增加劃線處理時間以及不增加劃線工具至雷射劃線系統的情況下實施。此外,必須增加產量至接近100%,同時降低劃線寬度和間距以減少死區。 Active control of the position of the line has been described in the literature by the term "Dynamic Line Alignment (DSA)". The concept of the DSA measures the previous scribe line relative to the pre-defined scribe line layout in a static manner to determine the exact target position of the adjacent line, thereby compensating for any deviation in the target layout of the previous scribe line, thus Reduce the deviation of the scribe line. This type of dynamic scribe alignment poses many challenges to the laser scribing system. The scribing system must meet the strict festivals in mass production The takt time target (roughly the amount of time that must pass through two consecutive photovoltaic units to meet demand). Therefore DSA must occur without increasing the scribing process time and without adding a scribing tool to the laser scribing system. In addition, it is necessary to increase the yield to nearly 100% while reducing the scribe width and spacing to reduce the dead zone.

根據檢測到先前劃刻線的位置之時機,可做出已知的劃線對齊提案之間的分別。DSA之概念為首先掃描一個模組的完整佈局,如所有P1劃線,然後計算包含必要校正之下一個佈局,例如,在P1旁邊的P2,並在下一步驟中劃刻相鄰之佈局,DSA概念可達成死區之減少,但無法滿足先進薄膜光伏打加工中必要之節拍時間和成本的要求。 Based on the timing at which the position of the previously scribed line is detected, a distinction can be made between known scribe alignment proposals. The concept of DSA is to first scan the complete layout of a module, such as all P1 lines, and then calculate a layout containing the necessary corrections, for example, P2 next to P1, and scribe adjacent layouts in the next step, DSA The concept can achieve a reduction in dead zones, but it cannot meet the necessary tact time and cost requirements for advanced thin film photovoltaic processing.

過去已建議,在劃刻鄰接線,例如在P1旁邊的P2,之前以及期間,掃描先前之劃刻線,例如P1線。劃線單元緊跟隨掃描單元,藉此,位置係根據先前所劃之鄰近劃線的實際位置而加以校正,對於兩種選擇而言操作範圍是相同的。然而,若先前的劃線之掃描、加工頭的動態校正、以及在剛掃描之線隔壁劃相鄰的線是在劃該相鄰的線之期間於單一順序完成,則由於可用於數據處理和劃線頭位置校正之時間有限,造成準確度和解析度上的困難。 It has been suggested in the past to scan the adjacent scribe line, such as the P1 line, before scribing the adjacent line, for example, before and during P2 next to P1. The scribe unit follows the scan unit, whereby the position is corrected based on the actual position of the adjacent scribe line previously drawn, and the range of operation is the same for both options. However, if the scanning of the previous scribe line, the dynamic correction of the processing head, and the line adjacent to the line next to the line just scanned are completed in a single sequence during the grading of the adjacent line, since it can be used for data processing and The timing of the position of the scribing head is limited, resulting in difficulty in accuracy and resolution.

為了避免在定位時準確度過低,測量先前之劃線以及劃刻新的相鄰線之間所允許的時間很短,此導致可用於分析數據和使軸移動平滑所允許的數學運算數量相對少。這導致回復上的困難、可能的振盪問題、並限制最大劃線速度或使不準確度提高。例如以2m/s之劃線速度,為了獲得良好的準確度,可能僅有2ms可用於後續的位置校正之間的掃描期間計算,這使得在典型的PLC控制器上的數學運算數目有限。因此,此等建議之解決方案並不實際,因為它們會導致動態校正以及劃線速度上的限制,此兩者從薄膜製造系統之要求的角度而言都是無法接受的。 In order to avoid the accuracy being too low during positioning, the time allowed to measure the previous scribe line and the new adjacent line is very short, which results in a relative amount of mathematical operations that can be used to analyze the data and smooth the axis movement. less. This leads to difficulties in recovery, possible oscillation problems, and limits the maximum line speed or increases the inaccuracy. For example, at a line speed of 2 m/s, in order to obtain good accuracy, only 2 ms may be available for the scan period calculation between subsequent position corrections, which makes the number of mathematical operations on a typical PLC controller limited. Therefore, these proposed solutions are not practical because they result in dynamic correction and limits on the speed of the scribing, both of which are unacceptable from the standpoint of the requirements of the film manufacturing system.

任何動態劃線對齊系統必須處理的第二個挑戰是先前之劃線的離群值。離群值可來自玻璃/基板上之刮痕、其他玻璃/基板缺陷、遺漏的劃線點、及其相似物。任何掃描模式必須能夠識別和處理此等離群值,否則此等離群值在校正後會導致相鄰劃線之錯誤的新劃線位置。例如,若第一點為離群值且需要連續的劃線速度以達到最高的處理品質時,所劃 線之平行性在快速(例如1-3m/s)劃線期間在相對長的距離上係受負面影響,直到控制系統開始校正有效的數據點。再者,如果線被中斷同樣的現象將更為明顯。其他範例包含相鄰之佈局不具有相同起始點和結束點,但仍藉由DSA彼此對齊,例如P3對齊P2。DSA運算法必需能夠處理此情況。 The second challenge that any dynamic line alignment system must address is the outliers of the previous line. Outliers can result from scratches on the glass/substrate, other glass/substrate defects, missing scribe lines, and the like. Any scan mode must be able to identify and process such outliers, otherwise such outliers will result in incorrect new line positions for adjacent lines after correction. For example, if the first point is an outlier and a continuous scribing speed is required to achieve the highest processing quality, The parallelism of the lines is negatively affected over a relatively long distance during fast (e.g., 1-3 m/s) scribing until the control system begins to correct valid data points. Furthermore, the same phenomenon will be more pronounced if the line is interrupted. Other examples include adjacent layouts that do not have the same starting and ending points, but are still aligned with each other by DSA, such as P3 aligning P2. The DSA algorithm must be able to handle this situation.

第三個挑戰是使DSA對劃線之校正程度小。如果預期的劃線位置和實際劃線位置之間的幾何誤差大,將導致在每次劃線開始時,垂直於劃線方向之移動的大幅偏移。取決於該移動之動態,劃線之平行性係受負面影響。這些挑戰在文獻中普遍受到低估或高估,但在接近100%的產量之量產中,這些所有的實際問題都必須在任何動態對齊解決方案中獲得解決。 The third challenge is to make the DSA less corrective for the line. If the geometric error between the expected scribe line position and the actual scribe line position is large, it will result in a large shift in the movement perpendicular to the scribe line direction at the beginning of each scribe line. Depending on the dynamics of the movement, the parallelism of the scribe lines is negatively affected. These challenges are generally underestimated or overestimated in the literature, but in mass production close to 100% of production, all of these practical problems must be addressed in any dynamic alignment solution.

因此,在本技藝中,在雷射劃線系統中需要改良之動態對齊。 Therefore, in the art, improved dynamic alignment is required in laser scribing systems.

雷射劃線系統的另一個問題係關於多光束生成及其應用於基板的問題。雖然許多光學元件可用以從單一雷射源產生數個光束,這些元件的一部份,例如,繞射光學元件(diffractive optical elements,DOE)產生除了期望之數個用於劃線之光束外之更高數級的繞射光束。雖然較高數級的繞射光束不具有足夠用於劃線之能量,但在某些情況下它們可帶有劃線光束之光學能量的50%。此能量可足以在相鄰於劃線之區域中造成目標膜之非意欲的不整齊現象(缺陷、結構上的局部變化),例如,在處理非常敏感的薄膜之情況。 Another problem with laser scribing systems is the problem of multi-beam generation and its application to substrates. While many optical components can be used to generate several beams from a single laser source, a portion of these components, such as diffractive optical elements (DOE), are produced in addition to the desired number of beams for scribing. Higher order diffracted beams. Although the higher order diffracted beams do not have enough energy for scribing, in some cases they may carry 50% of the optical energy of the scribing beam. This energy may be sufficient to cause unintended irregularities (defects, structural local variations) of the target film in areas adjacent to the scribe line, for example, in the case of handling very sensitive films.

因此,在本技藝中產生一種需要,以使到達由雷射劃線系統處理之膜之非意欲光量減少。 Accordingly, a need exists in the art to reduce the amount of unintended light reaching a film treated by a laser scribing system.

此外,有時候要用於特定的劃線處理或處理步驟之光束少於所產生之數個光束的全部。因此,本技藝中需要精確控制的光閘系統,以控制期望之光束的通過。 In addition, sometimes the beam to be used for a particular scribing process or processing step is less than the total number of beams produced. Therefore, there is a need in the art for a precisely controlled shutter system to control the passage of a desired beam.

大型基板的移動所產生的實質性問題係關於基板握持/夾持和定位,而不造成基板破壞和基板定位不準確度。因此,在本技藝中,在雷射劃線系統中需要改良的基板握持系統。 The substantial problem with the movement of large substrates is with respect to substrate holding/clamping and positioning without causing substrate damage and substrate positioning inaccuracies. Accordingly, there is a need in the art for an improved substrate handling system in a laser scribing system.

最後,必須有效地移除在雷射劃線處理中產生的碎片,而不在膜上的其他地方再沉積,或以其他方式留下會影響未來之處理及/或損 及元件品質的製品。 Finally, the debris generated in the laser scribing process must be effectively removed without redeposition elsewhere in the film, or otherwise left to affect future processing and/or damage. And component quality products.

上述結果造成本領域需要改良的雷射劃線系統,以處理大面 積基板,如大面積光伏打元件/元件列。 The above results have led to the need for improved laser scribing systems in the art to handle large surfaces Substrate, such as a large area of photovoltaic elements / components.

定義definition

太陽能電池或光伏打電池 (PV電池)為一電子構件,能夠藉由光電效應直接將光(實質上為太陽光)轉化為電能。 A solar cell or a photovoltaic cell (PV cell) is an electronic component that directly converts light (essentially sunlight) into electrical energy by a photoelectric effect.

在一般意義上的 薄膜太陽能電池 包含:在一支撐基板上,由半導體化合物的薄膜沉積所建立的至少一p-i-n接面,夾設在兩個電極或電極層之間。p-i-n接面或薄膜光電轉換單元包含本質半導體化合物層,夾設於一p摻雜和一n摻雜的半導體化合物層之間。用語薄膜指示所提及之層係藉由例如PECVD、LPCVD、PVD或其相似物之處理沉積成薄層或薄膜。薄層實質上意味著具有約10μm或更小之厚度的層,以及特別是小於約2μm的層。 A thin film solar cell in a general sense comprises: on a support substrate, at least one pin junction formed by thin film deposition of a semiconductor compound, sandwiched between two electrodes or electrode layers. The pin junction or thin film photoelectric conversion unit comprises an intrinsic semiconductor compound layer interposed between a p-doped and an n-doped semiconductor compound layer. The term thin film indicates that the layer mentioned is deposited as a thin layer or film by treatment such as PECVD, LPCVD, PVD or the like. A thin layer essentially means a layer having a thickness of about 10 [mu]m or less, and in particular a layer of less than about 2 [mu]m.

圖案化 為具有某些佈局和某些參數的層之特定雷射結構化製程,其隔離或互連電池。 A layout pattern having certain parameters and certain specific laser structuring process layers, which are interconnected or isolated cell.

用語 塗層 沉積物 、和 在本揭露中係可互換使用,意指在真空處理設備中沉積的膜,可為CVD、LPCVD、電漿增強CVD(PECVD)、或PVD(物理氣相沉積)。 The terms layer , coating , deposit , and film are used interchangeably throughout this disclosure to mean a film deposited in a vacuum processing apparatus, which may be CVD, LPCVD, plasma enhanced CVD (PECVD), or PVD (physical gas). Phase deposition).

條帶(band) 由若干線(例如,1到7)所組成,該等線同時由一特殊多光束劃線頭設計處理,其中線的距離代表例如電池或接觸窗之分段的寬度。 A band consists of a number of lines (e.g., 1 to 7) that are simultaneously processed by a special multi-beam scribe head design, where the distance of the line represents the width of a segment such as a battery or contact window.

有效值 係為在容許帶範圍內之數值。 The effective value is a value within the allowable band.

光閘 在本發明之意義上包含任何機械元件,或其它元件或方法,以阻擋一或更多雷射光束。 The shutter comprises any mechanical element, or other element or method, in the sense of the present invention to block one or more laser beams.

DOE 在本發明之意義上為繞射光學元件,將入射光束分成若干光束,此等光束可分為需要的和不需要的光束等級。 The DOE, in the sense of the present invention, is a diffractive optical element that splits the incident beam into a number of beams that can be divided into desired and unwanted beam levels.

輻照意 味著光束功率至光束面積的關係,此係以沿著光束路徑(通常在或接近光束聚焦區域內)之一特定位置計算。 Means that the power of the beam irradiated to the relationship between the beam area, this line along the beam path (typically close to or within the beam focusing region) one specific position calculation.

在一整體實施態樣中,使用動態劃線對齊的雷射劃線方法可包含:決定已考量熱膨脹和收縮之預期劃線位置、制定第一容許帶和第二容許帶,其中第一容許帶和第二容許帶具有圍繞該決定的預期劃線位置之各自的預定條帶位置、使用掃描單元測量劃線位置、決定劃線位置是否在第一容許帶內,若測量之劃線位置在第一容許帶內,決定劃線位置是否在第二容許帶內,若測量之劃線位置在第二容許帶內,則接受測量之劃線位置並使用測量之劃線位置進行劃線對齊,若測量之劃線位置不在第一容許帶內,則將劃線位置設定在決定之預期劃線位置,若測量之劃線位置不在第二容許帶內,則決定測量之劃線位置是否為新的掃描中之第一劃線位置,若測量之劃線位置為第一劃線位置,則將測量之劃線位置設定在根據僅沿著一掃描之以下劃線位置所計算出的位置,且若測量之劃線位置不是第一劃線位置,將測量之劃線位置設定至一位置,該位置係根據沿著掃描之先前或後來的劃線位置或其組合而計算。 In a general implementation, a laser scribing method using dynamic scribing alignment may include determining an expected scribing position for which thermal expansion and contraction have been considered, and formulating a first allowable band and a second allowable band, wherein the first allowable band And the second allowable band has a predetermined strip position around the determined expected scribing position, the scribing position is measured using the scanning unit, and the scribing position is determined to be within the first allowable band, and if the measured scribing position is at the Within the allowable band, determine whether the line position is within the second allowable band. If the measured line position is within the second allowable band, the measured line position is accepted and the line position is measured using the measured line position. If the measured scribing position is not within the first allowable band, the scribing position is set at the determined expected scribing position, and if the measured scribing position is not within the second allowable band, it is determined whether the measured scribing position is new. In the first scribing position in the scan, if the measured scribing position is the first scribing position, the measured scribing position is set to the position calculated according to the underline position only along one scan. And if the measured position is not the first scribing scribing position of the scribe position measurement is set to a position that is calculated based from the previous or subsequent scans along the dashed line position or a combination of.

在另一整體實施態樣中,用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統可包含雷射源、一繞射光學元件,用以從由雷射源提供的雷射光束產生一或更多光學劃線光束、一阻擋元件、一散射元件、或其組合物,該阻擋元件和該散射元件放置於該繞射光學元件和該大面積基板之間,並用以阻擋不需要的繞射光束之一或更多部分、光學劃線光束之一或更多者、或其組合物、一聚焦光學件,用以集中光學劃線光束、以及一控制系統,用以將該光學劃線光束相對於該基板動態定位,並控制雷射源、該繞射光學元件之對齊及間隔、該阻擋元件、該掃描元件、或其組合物、以及該聚焦光學件。 In another overall implementation, a laser scribing system for removing portions of a thin film layer disposed on a large area substrate can include a laser source, a diffractive optical element for providing from a laser source The laser beam produces one or more optical scribe beams, a blocking element, a scattering element, or a combination thereof, the blocking element and the scattering element being placed between the diffractive optical element and the large area substrate, and To block one or more portions of the unwanted diffracted beam, one or more of the optical scribing beams, or a combination thereof, a focusing optic for concentrating the optical scribing beam, and a control system for The optical scribing beam is dynamically positioned relative to the substrate and controls the laser source, the alignment and spacing of the diffractive optical elements, the blocking element, the scanning element, or combination thereof, and the focusing optic.

阻擋元件可包含光學光閘系統,該光學光閘系統包含一或更多光閘元件,用以減少所使用的光學劃線光束數目。 The blocking element can comprise an optical shutter system comprising one or more optical shutter elements for reducing the number of optical scribe beams used.

阻擋元件可包含光學光閘系統,該光學光閘系統包含一或更多光閘元件,用以阻擋不需要的繞射光束通過。 The blocking element can comprise an optical shutter system comprising one or more optical shutter elements for blocking the passage of unwanted diffracted beams.

光閘元件可包含複數指部,用以阻擋不需要的繞射光束通過。 The shutter element can include a plurality of fingers to block unwanted diffracted beams from passing.

光學光間系統可包含一梳形濾波器。 The optical inter-optical system can include a comb filter.

光閘元件可包含複數指部,用以減少所使用的光學劃線光束數目。 The shutter element can include a plurality of fingers to reduce the number of optical scribe beams used.

散射元件可包含該等光學劃線光束通過之透明區域,以及不需要的繞射光束通過之散射區域。 The scattering element can comprise a transparent region through which the optical scribe beam passes, and a scattering region through which the unwanted diffracted beam passes.

散射區域可包含散射粒子,以造成不需要的繞射光束之散射。 The scattering region may contain scattering particles to cause scattering of unwanted diffracted beams.

散射區域可包含一表面,具有用以造成不需要的繞射光束散射的紋理。 The scattering region can include a surface with a texture to cause unwanted diffracted beam scattering.

在另一整體實施態樣中,用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統可包含一平台,該平台中心部具有一分離區,該分離區用以使雷射劃線頭可從平台之下方在基板上操作、一氣墊,形成於該平台之表面的上方,該氣墊用以將基板從該平台之表面升起,其中該平台包含複數通道,一氣體係流動於該等通道中以形成在該平台之表面的上方之氣墊、以及一夾持系統,用以定位待由劃線頭所操作之基板,該夾持系統包含一移動系統,用以藉由一或更多第一夾具在與該劃線頭之移動方向正交的方向移動基板,該一或更多第一夾具係放置在平台之一側,該等第一夾具之每一者包含可調式上夾爪和固定式下夾爪,該下夾爪係設置在與該表面的上方之氣墊等高的高度上,該下夾爪用以使該基板可平放於下夾爪上。 In another overall embodiment, a laser scribing system for removing portions of a film layer disposed on a large area substrate can include a platform having a separation region at a central portion thereof for The laser scribing head can be operated on the substrate from below the platform, and an air cushion is formed above the surface of the platform for lifting the substrate from the surface of the platform, wherein the platform comprises a plurality of channels, a gas An air cushion flowing in the channels to form an upper surface of the platform, and a clamping system for positioning a substrate to be operated by the scribing head, the clamping system including a mobile system for borrowing Moving the substrate by one or more first jigs in a direction orthogonal to a moving direction of the scribing head, the one or more first jigs being placed on one side of the platform, each of the first jigs comprising An adjustable upper jaw and a fixed lower jaw are disposed at a height equal to the air cushion above the surface, the lower jaw being adapted to allow the substrate to rest flat on the lower jaw.

上夾爪和下夾爪可包含玻璃強化塑料。 The upper and lower jaws may comprise glass reinforced plastic.

夾持系統的移動系統係更用以藉由該等第一夾具及放置於該平台之相對側上的一或更多第二夾具將基板移動遠離該等第一夾具,該等第一夾具在劃線頭之移動方向為固定,該等第二夾具在劃線頭之移動方向為可彎曲,以使基板可熱膨脹。 The movement system of the clamping system is further configured to move the substrate away from the first clamps by the first clamps and one or more second clamps placed on opposite sides of the platform, the first clamps being The moving direction of the scribing head is fixed, and the second jig is bendable in the moving direction of the scribing head to make the substrate thermally expandable.

第二夾具之每一者可包含可調式上夾爪和固定式下夾爪,該下夾爪設置在與該表面的上方之氣墊等高的高度上,該下夾爪用以使該基板可平放於下夾爪上。 Each of the second clamps can include an adjustable upper jaw and a fixed lower jaw, the lower jaw being disposed at a height equal to an air cushion above the surface, the lower jaw being configured to make the substrate Place it flat on the lower jaw.

在另一整體實施態樣中,用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統可包含一雷射源、一劃線頭,用以從該雷射源 接收雷射光束並從該處發出一或更多光學劃線光束,該劃線頭包含一繞射光學元件和聚焦光學件,該繞射光學元件係用以從所接收之雷射光束產生一或更多光學劃線光束,該聚焦光學件係用以集中所產生之光學劃線光束、一或更多光閘設置在該劃線頭之外部部分上,該等光閘係用以繞實質上平行於該聚焦光學劃線光束之軸旋轉,並選擇性地阻擋該等聚焦光學劃線光束之一或更多者,以及一控制系統,用以將該光學劃線光束相對於該基板動態定位,及控制該雷射源、該繞射光學元件之對齊及間隔、該等光閘、以及該聚焦光學件。 In another overall implementation, a laser scribing system for removing portions of a thin film layer disposed on a large area substrate can include a laser source, a scribing head for extracting from the laser source Receiving a laser beam and emitting one or more optical scribing beams therefrom, the scribing head comprising a diffractive optical element and a focusing optic for generating a laser beam from the received beam Or more optical scribing beams, wherein the focusing optics are used to concentrate the generated optical scribing beams, and one or more shutters are disposed on the outer portion of the scribing heads. Rotating parallel to the axis of the focused optical scribe beam and selectively blocking one or more of the focused optical scribe beams, and a control system for dynamically illuminating the optical scribe beam relative to the substrate Positioning, and controlling the laser source, the alignment and spacing of the diffractive optical elements, the shutters, and the focusing optics.

在另一整體實施態樣中,提供用以操作移除放置於大面積基板上的薄膜層之部分的雷射劃線系統之方法,該系統包含一雷射源、一劃線頭,用以從該雷射源接收雷射光束並從該處發出一或更多光學劃線光束,該劃線頭包含一繞射光學元件和聚焦光學件,該繞射光學元件係用以從所接收之雷射光束產生一或更多光學劃線光束,該聚焦光學件係用以集中所產生之光學劃線光束、一或更多光閘設置在該劃線頭之外部部分上,該等光閘係用以繞實質上平行於該聚焦光學劃線光束之軸旋轉,並選擇性地阻擋該等聚焦光學劃線光束之一或更多者,以及一控制系統,用以將該光學劃線光束相對於該基板動態定位,及控制該雷射源、該繞射光學元件之對齊及間隔、該等光閘、以及該聚焦光學件,本方法包含識別不期望由該等聚焦光學劃線光束所劃刻之區域、以及以同步的方式旋轉光閘之一或更多者,俾使該等聚焦光學劃線光束係阻擋於在不期望由聚焦光學劃線光束所劃線之區域中劃線,當光閘通過不期望由聚焦光學劃線光束所劃線之區域時,該等光閘繼續旋轉,俾使當劃線頭已離開不期望由聚焦光學劃線光束所劃線之區域時,聚焦光學劃線光束沒有被阻擋。 In another overall embodiment, a method of operating a laser scribing system for removing portions of a film layer disposed on a large area substrate is provided, the system including a laser source and a scribing head for Receiving a laser beam from the laser source and emitting one or more optical scribing beams therefrom, the scribing head comprising a diffractive optical element and a focusing optic for receiving from the receiving The laser beam produces one or more optical scribe beams for concentrating the generated optical scribe beam, one or more shutters disposed on an outer portion of the scribe head, the shutters For rotating about an axis substantially parallel to the focused optical scribe beam and selectively blocking one or more of the focused optical scribe beams, and a control system for aligning the optical scribe beam Dynamically locating the substrate, controlling the alignment of the laser source, the diffractive optical elements, and the focusing optics, and the focusing optics, the method includes identifying that the beam is not desired to be scribed by the focusing optical Scribing area, and One or more of the steps of rotating the shutter, such that the focused optical scribing beam is blocked from scribing in an area that is not desired to be lined by the focused optical scribing beam, when the shutter passes undesirably When focusing the area underlined by the optical scribe beam, the shutters continue to rotate so that the focused optical scribe beam is not blocked when the scribe has left the area not descended by the focused optical scribe beam .

在另一整體實施態樣中,用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統可包含一平台,該平台中心部具有一分離區,該分離區用以使劃線頭可從平台之下方在基板上操作、以及一排氣系統,用以從該基板的處理區域移除剝離的材料,該排氣系統包含一噴嘴,位於該剝離的材料受移除的處理區域上方且靠近該處理區域,該噴嘴用以在該劃線頭前方,在同於劃線頭之移動方向之方向移動,並當由劃線頭在基板 上執行劃線而產生剝離的材料時,從該處理區域移除該剝離的材料。 In another overall embodiment, a laser scribing system for removing portions of a film layer disposed on a large area substrate can include a platform having a separation region at a central portion thereof for The scribing head is operable on the substrate from below the platform, and an exhaust system for removing the stripped material from the processing region of the substrate, the exhaust system including a nozzle at which the stripped material is removed Above the processing area and close to the processing area, the nozzle is used to move in the direction of the moving direction of the scribing head in front of the scribing head, and when the substrate is on the substrate by the scribing head The peeled material is removed from the treated area when the scribing is performed to effect the peeling of the material.

一流線型夾套可圍繞該噴嘴,該流線型夾套係用以減少由該噴嘴之移動所造成之擾動。 A first-rate linear jacket surrounds the nozzle, and the streamlined jacket is used to reduce the disturbance caused by the movement of the nozzle.

1‧‧‧光伏打結構 1‧‧‧Photovoltaic structure

2‧‧‧透明絕緣基板 2‧‧‧Transparent insulating substrate

3‧‧‧透明電極層 3‧‧‧Transparent electrode layer

4‧‧‧光電轉換半導體層 4‧‧‧Photoelectric conversion semiconductor layer

5‧‧‧背面電極層 5‧‧‧Back electrode layer

6‧‧‧第一隔離溝槽 6‧‧‧First isolation trench

7‧‧‧槽 7‧‧‧ slot

8‧‧‧第二隔離槽 8‧‧‧Second isolation trench

100‧‧‧雷射劃線系統 100‧‧‧Laser marking system

110‧‧‧雷射源 110‧‧‧Laser source

112‧‧‧雷射光束 112‧‧‧Laser beam

115‧‧‧分光器 115‧‧‧ Spectroscope

120‧‧‧繞射光學元件 120‧‧‧Diffractive optical components

122‧‧‧光學劃線光束 122‧‧‧Optical line beam

124‧‧‧不需要的繞射光束 124‧‧‧Unwanted diffracted beam

130‧‧‧散射元件 130‧‧‧scattering elements

132‧‧‧透明區域 132‧‧‧Transparent area

134‧‧‧散射區域 134‧‧‧scattering area

136‧‧‧散射光 136‧‧‧scattered light

140‧‧‧聚焦光學件 140‧‧‧Focus optics

150‧‧‧控制系統 150‧‧‧Control system

160‧‧‧光學光閘 160‧‧‧ optical shutter

162‧‧‧隔離劃線 162‧‧‧Isolation line

164‧‧‧光學光閘 164‧‧‧ optical shutter

170‧‧‧劃線頭 170‧‧‧ scribe head

180‧‧‧工件支撐件 180‧‧‧Workpiece support

181‧‧‧基板 181‧‧‧Substrate

182‧‧‧工件側面夾持機構 182‧‧‧Workpiece side clamping mechanism

184‧‧‧平台 184‧‧‧ platform

186‧‧‧夾具 186‧‧‧ fixture

187‧‧‧下夾爪 187‧‧‧ Lower jaw

188‧‧‧氣墊 188‧‧‧ air cushion

189‧‧‧上夾爪 189‧‧‧Upper jaw

190‧‧‧排氣系統 190‧‧‧Exhaust system

192‧‧‧噴嘴 192‧‧‧ nozzle

194‧‧‧氣動力殼體 194‧‧‧ aerodynamic shell

196‧‧‧移動系統 196‧‧‧Mobile system

282‧‧‧夾持機構 282‧‧‧Clamping mechanism

286‧‧‧夾具 286‧‧‧ fixture

287‧‧‧下夾爪 287‧‧‧ Lower jaw

289‧‧‧上夾爪 289‧‧‧Upper jaw

300‧‧‧真空單元 300‧‧‧vacuum unit

圖1A示意性地描繪根據本發明之實施態樣的雷射劃線系統之概要。 FIG. 1A schematically depicts an overview of a laser scribing system in accordance with an embodiment of the present invention.

圖1B繪示根據本發明之實施態樣的雷射劃線系統之劃線頭的範例。 FIG. 1B illustrates an example of a scribing head of a laser scribing system in accordance with an embodiment of the present invention.

圖2示意性地描繪由圖1之雷射劃線系統所產生之受劃線的基板。 Figure 2 schematically depicts a scribed substrate produced by the laser scribing system of Figure 1.

圖3A和圖3B描繪用以從繞射光學元件散射不需要的繞射光之光學元件。 3A and 3B depict optical elements used to scatter unwanted diffracted light from a diffractive optical element.

圖4描繪可選擇地用於本發明之雷射劃線系統的光學光閘系統。 4 depicts an optical shutter system that may alternatively be used in the laser scribing system of the present invention.

圖5顯示由雷射劃線系統之控制系統進行之用於動態對齊之離群值移除的概要。 Figure 5 shows an overview of the outlier removal for dynamic alignment by the control system of the laser scribing system.

圖6A和圖6B分別繪示了根據本發明之實施態樣的雷射劃線系統之工件支撐件的立體和側面範例。 6A and 6B are respectively a perspective and side elevational view of a workpiece support of a laser scribing system in accordance with an embodiment of the present invention.

圖7A為一側視圖,顯示根據本發明之實施態樣的雷射劃線系統之排氣系統的範例。 Figure 7A is a side elevational view showing an example of an exhaust system of a laser scribing system in accordance with an embodiment of the present invention.

圖7B為一剖視圖,顯示根據相關範例的雷射劃線系統的排氣系統之噴嘴的範例。 Figure 7B is a cross-sectional view showing an example of a nozzle of an exhaust system of a laser scribing system according to a related example.

圖7C為一剖視圖,顯示根據本發明之實施態樣的雷射劃線系統的排氣系統之流線型噴嘴的範例。 Figure 7C is a cross-sectional view showing an example of a streamlined nozzle of an exhaust system of a laser scribing system in accordance with an embodiment of the present invention.

現參照圖1A和圖1B,該等圖描繪雷射劃線系統100之概要。提供雷射源110。可使用各種雷射作為雷射源110。示例性的雷射源可 包含脈衝雷射和連續波雷射。雷射源110可在紅外線、可見光、或紫外線光譜區發射雷射光束112。在一實施例中,紅外線雷射在紅外線光譜區域以1064nm的基本波長操作。可產生此波長的諧波,以用於使用適當定位的倍頻或混頻晶體(未示出)之電射處理。例如,可產生第二諧波波長(532nm,在綠光譜區)及/或第三諧波波長(355nm,在紫外線光譜區)。在一實施例中,此等數個所產生之諧波波長可使用適當放置的兩向色鏡分開,可選擇地放置在分光器115中,以用在例如數個劃線頭中。為求簡單,圖1A和圖1B僅顯示單一劃線頭170,其他使用由雷射源110所提供之不同波長者可平行於該劃線頭170而增加。藉由選擇數個劃線頭之其中一者,可將最佳波長用於每個薄膜及/或處理步驟。雷射源110可用範圍介於1微微秒至50毫微秒的脈衝長度進行脈衝,並在範圍介於10kHz到10MHz之脈衝重複頻率操作。 1A and 1B, which depict an overview of a laser scribing system 100. A laser source 110 is provided. Various lasers can be used as the laser source 110. An exemplary laser source is available Includes pulsed laser and continuous wave laser. Laser source 110 can emit laser beam 112 in the infrared, visible, or ultraviolet spectral region. In one embodiment, the infrared laser is operated at a fundamental wavelength of 1064 nm in the infrared spectral region. Harmonics of this wavelength can be generated for electro-radiation processing using properly positioned multiplier or mixing crystals (not shown). For example, a second harmonic wavelength (532 nm in the green spectral region) and/or a third harmonic wavelength (355 nm in the ultraviolet spectral region) can be generated. In one embodiment, the plurality of generated harmonic wavelengths may be separated using a suitably placed dichroic mirror, optionally placed in beam splitter 115 for use, for example, in a plurality of scribing heads. For simplicity, FIGS. 1A and 1B show only a single scribe head 170, and other uses of different wavelengths provided by the laser source 110 may be added parallel to the scribe head 170. The optimum wavelength can be used for each film and/or processing step by selecting one of a plurality of scribing heads. The laser source 110 can be pulsed with a pulse length ranging from 1 picosecond to 50 nanoseconds and operated at a pulse repetition frequency ranging from 10 kHz to 10 MHz.

繞射光學元件(DOE)120係放置於劃線頭170內之雷射源110的下游處。需注意各種光學元件,包含分光器115、擴束器、聚焦元件、準直器、反射鏡、兩向色鏡、光纖、光束衰減器等(未示出)可定位在雷射源110和DOE 120之間,取決於雷射源110和DOE 120之間的間距,以及期望之雷射光點大小及輻照。另外,應注意本系統之元件不需要如所描繪般沿著單一軸放置。使用鏡或其它反射元件、以及光纖,可根據雷射劃線系統100的整體配置和空間要求構建各種光學軸。 A diffractive optical element (DOE) 120 is placed downstream of the laser source 110 within the scribing head 170. It is noted that various optical components, including beam splitter 115, beam expander, focusing element, collimator, mirror, dichroic mirror, fiber optics, beam attenuator, etc. (not shown) can be positioned at laser source 110 and DOE. Between 120, depending on the spacing between the laser source 110 and the DOE 120, as well as the desired laser spot size and exposure. Additionally, it should be noted that the components of the system need not be placed along a single axis as depicted. Various optical axes can be constructed in accordance with the overall configuration and space requirements of the laser scribing system 100 using mirrors or other reflective elements, as well as optical fibers.

DOE 120產生數個光學劃線光束122以及不需要的繞射光束124。不需要的繞射光束124包含無助於劃線,但可損壞膜之未劃線區域的高階繞射光。在一實施例中,所有的光學劃線光束122具有大致相同的強度。雖然描繪了四道光束,但DOE 120可用以產生更多或更少光學劃線光束122。光學劃線光束122係以α恆定角度間距彼此定向,並集中於DOE 120之光軸。 The DOE 120 produces a plurality of optical scribe beams 122 and an unwanted diffracted beam 124. The unwanted diffracted beam 124 contains high order diffracted light that does not contribute to scribing, but can damage unlined areas of the film. In an embodiment, all of the optical scribe beam beams 122 have substantially the same intensity. Although four beams are depicted, the DOE 120 can be used to create more or fewer optical scribe beams 122. The optical scribing beams 122 are oriented relative to each other at a constant angular spacing of a and are concentrated on the optical axis of the DOE 120.

雖然不需要(即高階)的繞射光束124係藉由DOE 120之設計最小化,但不需要的繞射光束124仍可攜帶光學劃線光束122的總光學功率之40%以下。為了防止此光損壞待處理之膜,散射元件130可置於在劃線頭170中之DOE 120的下游處。散射元件130包含:透明區域132(參照 圖3A),該區域使光學劃線光束122不受影響地穿過。然而,不需要的繞射光束124穿過散射區域134。在一實施例中,散射元件130可由熔融二氧化矽、光學級玻璃所製成,以允許例如紫外線波長之傳輸。其他適當的材料可用於其它波長範圍,包含各種聚合物材料。散射區域134可包含粗糙表面紋理,以散射不需要的繞射光束124。合適的表面紋理可由以下方式產生:a)機械處理(如:噴砂、雕刻),b)光學處理(如:雷射處理,例如雷射劃線),或c)化學處理(如:具有或不具有圖案之蝕刻)。 Although the diffracted beam 124 that is not required (i.e., high order) is minimized by the design of the DOE 120, the unwanted diffracted beam 124 can still carry less than 40% of the total optical power of the optical scribing beam 122. To prevent this light from damaging the film to be treated, the scattering element 130 can be placed downstream of the DOE 120 in the scribing head 170. The scattering element 130 includes: a transparent region 132 (refer to Figure 3A), this region passes the optical scribing beam 122 unaffected. However, the unwanted diffracted beam 124 passes through the scattering region 134. In an embodiment, the scattering element 130 can be made of molten ceria, optical grade glass to allow for transmission of, for example, ultraviolet wavelengths. Other suitable materials can be used in other wavelength ranges, including various polymeric materials. The scattering region 134 can include a rough surface texture to scatter unwanted diffracted beams 124. Suitable surface textures can be produced by: a) mechanical treatment (eg sandblasting, engraving), b) optical treatment (eg laser treatment, eg laser marking), or c) chemical treatment (eg with or without With pattern etching).

需注意上述用以提供粗糙表面紋理之處理僅為示例性的技術,且任何散射不需要的繞射光束124之結構可用於散射元件130。例如,散射粒子可嵌入在材料內部或附著至散射區域134,以造成散射。在另一實施例中,不同於用於透明區域132之低傳輸材料可用於散射區域134。 It is noted that the above-described process for providing a rough surface texture is merely an exemplary technique, and any structure of the diffracted beam 124 that is not required for scattering can be used for the scattering element 130. For example, the scattering particles can be embedded within the material or attached to the scattering region 134 to cause scattering. In another embodiment, a different transport material than for the transparent region 132 can be used for the scattering region 134.

如圖3B所示,透明區域132和散射區域134可配置為同心的圓形圖案。當DOE 120係用被繞系統之光軸旋轉,以使光束圖案方向變化,而不需要旋轉散射元件130時,這是非常有用的。圖3B之示例性實施例係為產生四道光束之DOE,但取決於DOE產生的光束數量,可使用更小或更大數量的同心區域。 As shown in FIG. 3B, the transparent region 132 and the scattering region 134 can be configured in a concentric circular pattern. This is very useful when the DOE 120 is rotated by the optical axis of the wound system to change the direction of the beam pattern without the need to rotate the scattering element 130. The exemplary embodiment of Figure 3B is a DOE that produces four beams, but depending on the number of beams produced by the DOE, a smaller or larger number of concentric regions can be used.

散射元件130可為單獨之光學元件或可設置在聚焦透鏡、聚焦透鏡之蓋玻璃,或是放置在聚焦透鏡前或後的玻璃中。 The scattering element 130 can be a separate optical element or can be placed in a focusing lens, a cover glass of a focusing lens, or in a glass placed in front of or behind the focusing lens.

藉由使用散射元件130,不需要的輻照係降低到低於影響用於產生薄膜太陽能模組之處理以及材料之閾值。雖然散射光136之一部分仍可擴散至處理區域,並能干擾其他散射光,它將不會變更薄膜。 By using the scattering element 130, the unwanted radiation is reduced below the threshold affecting the process and material used to create the thin film solar module. Although a portion of the scattered light 136 can still diffuse into the processing region and interfere with other scattered light, it will not alter the film.

來自DOE 120之光學劃線光束122係入射於包含在劃線頭170內之聚焦光學件140上。聚焦光學件140可包含一或更多物鏡、準直透鏡、和其他用以淨化處理區域前之光學劃線光束122的光學元件。需注意聚焦光學件140、DOE 120、和散射元件130之相對位置可相對於彼此改變,以及相對於正在使用控制系統150進行處理的基板而改變。此外,控制系統150可用以藉由控制光學劃線系統100的其他部分,如雷射源110之輸出功率、任何使用之衰減器的設定等等,提供期望之輻照及光束強度分布。 控制系統150更可用於相對於光軸,選擇光學劃線光束122的圖案方向。 The optical scribing beam 122 from the DOE 120 is incident on the focusing optics 140 contained within the scribing head 170. The focusing optics 140 can include one or more objective lenses, collimating lenses, and other optical components for purifying the optical scribing beam 122 prior to processing the region. It is noted that the relative positions of focusing optics 140, DOE 120, and scattering element 130 can be varied relative to each other and to the substrate being processed using control system 150. In addition, control system 150 can be used to provide desired radiation and beam intensity distribution by controlling other portions of optical scribing system 100, such as the output power of laser source 110, the settings of any attenuators used, and the like. Control system 150 is further operable to select the pattern direction of optical scribing beam 122 relative to the optical axis.

在一實施例中,一或更多光學光閘160、164可提供於雷射劃線系統100中並且安裝至劃線頭170的外部。光閘164可繞實質上平行於光學劃線光束122之軸線旋轉。光閘可被旋轉並固定於選擇性地阻斷一或更多光學劃線光束122之位置。可使用此等光閘之一組(圖中未示出),以選擇性地阻擋來自光學劃線光束122之線性圖案的每一側之光束。此外,光閘164可用於引起「跳過」基板上現存之不該由目前的劃線操作所影響之特徵部或結構。 In an embodiment, one or more optical shutters 160, 164 may be provided in the laser scribing system 100 and mounted to the exterior of the scribing head 170. The shutter 164 is rotatable about an axis substantially parallel to the optical scribe beam 122. The shutter can be rotated and fixed to selectively block the position of one or more optical scribe beams 122. A set of such shutters (not shown) may be used to selectively block the beam from each side of the linear pattern of optical scribe beam 122. In addition, shutter 164 can be used to cause existing features or structures on the "skip" substrate that should not be affected by the current scribing operation.

在圖4中,元件162係為,例如,圍繞整個模組之周圍行進的隔離劃線。用來分割電池的縱向劃線在圖案P1、P2、P3中的至少一部份不得越過此隔離劃線。如圖4所示,光閘164可用於輕鬆地完成「跳過」垂直於當前的電池分離劃線之隔離線,此係藉由以和掃描動作(使用控制系統150)同步的方式旋轉光閘164,俾使當劃線頭170穿過隔離劃線162時,可能撞擊隔離線的光學劃線光束122被光閘164所遮蔽。其好處為放寬短隔離劃線162之高速長縱向掃瞄之精確結束、及因此要求劃線頭170的「緊急減速」之要求。可理解地,當隔離劃線162係設置於靠近縱向掃描之開頭附近時,可採取相同作法。在此情況下,光閘164使劃線頭170在由隔離劃線162所圍成的空間外開始掃描(即穩定速度、取得現存圖案之動態鎖等),然後跳過隔離劃線162並繼續掃描以分割電池。 In Figure 4, element 162 is, for example, an isolated scribe line that travels around the entire module. The longitudinal scribe line used to divide the battery must not pass over the isolation scribe line in at least a portion of the patterns P1, P2, P3. As shown in FIG. 4, the shutter 164 can be used to easily "skip" the isolation line perpendicular to the current battery separation scribe line by rotating the shutter in synchronization with the scanning action (using the control system 150). 164. When the scribe head 170 passes through the isolation scribe line 162, the optical scribe beam 122 that may strike the isolation line is shielded by the shutter 164. The benefit is the precise end of the high speed long longitudinal scan that relaxes the short isolation scribe line 162, and therefore the requirement for "emergency deceleration" of the scribe head 170. Understandably, the same approach can be taken when the isolation scribe line 162 is placed near the beginning of the longitudinal scan. In this case, the shutter 164 causes the scribe head 170 to begin scanning outside the space enclosed by the scribe lines 162 (ie, stabilize the speed, obtain a dynamic lock of the existing pattern, etc.), then skip the scribe line 162 and continue Scan to divide the battery.

光閘164亦可用於更平凡的任務,例如減少在基板邊緣附近之平行間隔開的劃線數,其中剩餘的劃線數小於在劃線頭170中之光學劃線光束122的數量。另外,在光學劃線光束圖案係以使所有光束皆用以產生單一劃線(通常為寬的劃線,此係藉由使光束圖案僅非常輕微地非平行於劃線本身,以使做出比單一劃線光束可產生之更寬的劃線)而座向之操作中,可使用光閘164以選擇性地阻擋,例如,1或2光束以將輻照減少至最適合某些可能不需要4個光束以完成劃線之膜的程度。此亦可與設定雷射及/或任何光束衰減器的功率一起完成。 Shutter 164 can also be used for more mundane tasks, such as reducing the number of parallel spaced scribe lines near the edge of the substrate, with the remaining number of scribe lines being less than the number of optical scribe beams 122 in scribe head 170. In addition, the optical scribing beam pattern is such that all beams are used to create a single scribe line (usually a wide scribe line) by making the beam pattern only slightly non-parallel to the scribe line itself to make In the operation of the seating direction, a shutter 164 can be used to selectively block, for example, 1 or 2 beams to reduce the irradiation to the most suitable for some possibilities. The extent to which 4 beams are required to complete the film of the scribe line. This can also be done with the power of the set laser and/or any beam attenuator.

進一步參照圖1B,該圖顯示安裝在實質上平行於光學劃線光束122之其他可移動/可旋轉軸之臂上的第二光閘160。該第二光閘160 具有梳狀,其中該梳狀圖案,即「指部」,係用於阻擋不需要的繞射光束124,使光學劃線光束122可穿過梳狀「指部」之間。該第二光閘160可用於代替散射元件130或與散射元件130一起使用。例如,若散射元件130不充分地散射不需要的繞射光束124,或正在處理非常敏感的膜時,第二光閘160可代替散射元件130使用或與散射元件130一起使用。 With further reference to FIG. 1B, the figure shows a second shutter 160 mounted on an arm that is substantially parallel to the other movable/rotatable shaft of the optical scribe beam 122. The second shutter 160 There is a comb shape, wherein the comb pattern, that is, the "finger", is used to block the unnecessary diffracted beam 124 so that the optical scribing beam 122 can pass between the comb-like "finger". The second shutter 160 can be used in place of or in conjunction with the scattering element 130. For example, if the scattering element 130 does not sufficiently scatter the unwanted diffracted beam 124, or is processing a very sensitive film, the second shutter 160 can be used in place of or in conjunction with the scattering element 130.

第二光閘160之替代性實施例可用於控制光學劃線光束122,如同光閘164。例如,當光閘164無法選擇性地阻擋在線性圖案中之中間光束的一部份時,第二光閘160可用以使其指部之一或更多者選擇性地阻擋在圖案中之中間光束的一或更多者,同時使外光束可擴散及處理。在此情況下,其上安裝第二光閘160的軸/馬達可圍繞光學劃線光束圖案之軸線周圍旋轉,以當光束圖案旋轉時,不限制第二光閘160之使用。 An alternative embodiment of the second shutter 160 can be used to control the optical scribe beam 122, like the shutter 164. For example, when the shutter 164 is unable to selectively block a portion of the intermediate beam in the linear pattern, the second shutter 160 can be used to selectively block one or more of its fingers in the middle of the pattern. One or more of the beams, while allowing the outer beam to diffuse and process. In this case, the shaft/motor on which the second shutter 160 is mounted can be rotated around the axis of the optical scribing beam pattern to not limit the use of the second shutter 160 when the beam pattern is rotated.

所有光閘可任選地設置冷卻系統,以防止其發熱和翹曲,或其它機械失準。此外,光閘之冷卻可抑制因為在升高的溫度下圍繞元件之大的熱梯度,而形成於圍繞處理區域之空氣中的熱電流。這些電流可干擾從處理區域之碎片擷取。可替代地,光閘可包含用於將不需要的光束引導至光束傾卸部的鏡面表面部。 All shutters can optionally be provided with a cooling system to prevent heat and warpage, or other mechanical misalignment. In addition, the cooling of the shutter can suppress thermal currents formed in the air surrounding the processing region due to the large thermal gradient around the component at elevated temperatures. These currents can interfere with the capture of debris from the processing area. Alternatively, the shutter may include a mirror surface portion for directing an unwanted beam to the beam dump.

圖1A所繪示之雷射劃線系統100的工件支撐件180之範例,係示意性地顯示於圖6A和圖6B中。支撐件180包含分開的平台184,其中劃線頭170位於分開平台之兩個部分的槽中,支撐件180亦包含工件側面夾持機構182沿平台184的一個長邊設置。在夾持機構182中,夾持元件係為可交換式。換句話說,具有不同的可能尺寸,以不論隔離線及/或玻璃邊緣的距離,在其主動區域以外夾持各種模組之夾持元件,可用以配合不同的基板配置。夾持元件的表面紋理係以平行(或垂直)於基板181邊緣之移動方向加以建構,以確保更佳之玻璃夾持效果。在一實施例中,可選擇具有用於雷射劃線處理之高剛性和摩擦之特殊夾持材料。例如,夾持機構可為玻璃增強塑料。夾持單元的數目,係根據待處理基板之大小和形狀為可變化的。 An example of a workpiece support 180 of the laser scribing system 100 illustrated in FIG. 1A is shown schematically in FIGS. 6A and 6B. The support member 180 includes a separate platform 184, wherein the scribing head 170 is located in a slot separating the two portions of the platform, and the support member 180 also includes a workpiece side gripping mechanism 182 disposed along a long side of the platform 184. In the clamping mechanism 182, the clamping elements are interchangeable. In other words, having different possible dimensions, regardless of the distance of the isolation line and/or the edge of the glass, sandwiching the clamping elements of the various modules outside of their active area, can be used to match different substrate configurations. The surface texture of the gripping elements is constructed in parallel (or perpendicular) to the direction of movement of the edges of the substrate 181 to ensure a better glass grip. In an embodiment, a special gripping material having high rigidity and friction for laser scribing treatment can be selected. For example, the clamping mechanism can be a glass reinforced plastic. The number of clamping units is variable depending on the size and shape of the substrate to be processed.

在一實施例中,沿著平台184之長邊,夾持機構182可包含安裝至移動系統上之兩個夾具186。這些夾具186在Y方向驅動基板181。 劃線頭170在X方向移動。在一實施例中,雷射劃線系統100具有一或更多位於平台184下之劃線頭170,該等劃線頭處理穿過其上具有膜之玻璃(遠離平台184的表面)。平台184能夠以一面朝下的方式處理基板膜,因為透過在平台184內之通道(未示出)提供之氣墊188使空氣可通過其中,因此沒有接觸。氣墊188在處理期間支撐基板,以使基板之輸送平順。氣墊188將基板181維持在固定的高度,並防止玻璃彎曲。氣墊與上述之側面夾持機構182一起運作,以快速地將玻璃沿Y軸方向移動,而沿X方向之移動係由劃線頭170所執行。基板上之對齊標記係與影像系統一起使用,以確保基板定位之準確度高。此外,在另一替代性實施例中,劃線頭170可安裝至平台184上方的支架上,從而從上方,即不透過玻璃進行膜之劃線。 In an embodiment, along the long side of the platform 184, the clamping mechanism 182 can include two clamps 186 mounted to the mobile system. These jigs 186 drive the substrate 181 in the Y direction. The scribing head 170 moves in the X direction. In one embodiment, the laser scribing system 100 has one or more scribing heads 170 located below the platform 184 that process the glass with the membrane thereon (the surface away from the platform 184). The platform 184 is capable of processing the substrate film in a downward facing manner because the air cushion 188 provided through a passage (not shown) in the platform 184 allows air to pass therethrough and thus has no contact. The air cushion 188 supports the substrate during processing to smooth the transport of the substrate. The air cushion 188 maintains the substrate 181 at a fixed height and prevents the glass from being bent. The air cushion operates in conjunction with the side clamping mechanism 182 described above to rapidly move the glass in the Y-axis direction, and the movement in the X direction is performed by the scribing head 170. Alignment marks on the substrate are used with the imaging system to ensure high accuracy of substrate positioning. Moreover, in another alternative embodiment, the scribing head 170 can be mounted to a bracket above the platform 184 to scribe the film from above, i.e., without glass.

夾持機構182之夾具186係作為具有足夠的靈活性,以適應因為可移動之上夾持部分,或上夾爪189,和固定的下表面,或下夾爪187而造成之玻璃厚度的變化。相對於夾具186,夾具186的下夾爪187係固定在一定的高度,俾使基板181為平放並延伸進入夾具186以進行實際的夾持,同時處於在平台184表面上方之氣墊188的高度。夾具186的上夾爪189可做為可調整式,以因應標稱玻璃厚度的變化,並因應在同一個基板181內之厚度變化。 The clamp 186 of the clamping mechanism 182 is provided with sufficient flexibility to accommodate variations in glass thickness due to the movable upper clamping portion, or the upper jaw 189, and the fixed lower surface, or lower jaw 187. . Relative to the clamp 186, the lower jaw 187 of the clamp 186 is fixed at a height such that the base plate 181 is laid flat and extends into the clamp 186 for actual clamping while being at the level of the air cushion 188 above the surface of the platform 184. . The upper jaw 189 of the clamp 186 can be adjusted to accommodate variations in nominal glass thickness and to vary in thickness within the same substrate 181.

在一實施例中,當從下方穿過玻璃進行處理時,劃線頭170通常放置俾使待劃線之膜位在稍低於雷射光束之焦點下方的高度。由於光學缺陷、光束削波、雷射配置等等,因此光束強度分布並非真正的高斯函數,而僅大約如此。最佳的光束強度分布係於略低於焦點之位置達成,因為光束分布超出焦點後開始惡化。 In one embodiment, when processing through the glass from below, the scribing head 170 is typically placed such that the film to be scored is at a level slightly below the focus of the laser beam. The beam intensity distribution is not a true Gaussian function due to optical defects, beam clipping, laser configurations, etc., but only about this. The optimal beam intensity distribution is achieved at a position slightly below the focus because the beam spreads out of focus and begins to deteriorate.

在由上方進行處理的情況下,可反轉夾具座向。換言之,可固定上夾爪189、289以提供精確的雷射聚焦所用之基準點,而下夾爪187、287可具有彈性以因應厚度變化。氣墊188之整體,即,緩衝氣體的壓力和流動,以及移動系統之控制係藉由控制系統150與移動系統密切配合而完成,移動系統相對於基板控制劃線頭170之升高。 In the case of processing from above, the holder orientation can be reversed. In other words, the upper jaws 189, 289 can be secured to provide a precise point of reference for laser focusing, while the lower jaws 187, 287 can be resilient to accommodate thickness variations. The entirety of the air cushion 188, i.e., the pressure and flow of the buffer gas, and the control of the mobile system are accomplished by the control system 150 in close cooperation with the mobile system, which controls the rise of the scribing head 170 relative to the substrate.

在一實施例中,僅使用沿著平台184的一個長邊設置之兩個夾具186。這需要良好的夾持,因為在橫向(亦即,X方向)滑動可能導致 基板相對於X和Y軸傾斜地定位(成一個角度)。在Y方向之夾具滑動通常不是問題,因為移動和影像系統配合,以根據劃入基板181之對齊標記維持基板之適當的Y位置。 In one embodiment, only two clamps 186 disposed along one long side of the platform 184 are used. This requires good clamping because sliding in the lateral direction (ie, the X direction) may result in The substrate is positioned obliquely (at an angle) with respect to the X and Y axes. Sliding the jig in the Y direction is generally not a problem because the movement and imaging system cooperate to maintain the proper Y position of the substrate in accordance with the alignment marks that are drawn into the substrate 181.

在一實施例中,在相對於夾具186之平台184的一側上沒有夾具,此使基板181可在X方向上熱膨脹或收縮。移動和影像系統與動態劃線對齊配合,以因應熱膨脹及收縮。重要的是需注意這並沒有解決夾具中的X滑動和基板傾斜問題。若夾持時,下基板表面係保持固定,如同當射入之光學劃線光束122從下方接近基板181時,上夾爪189係為可移動,以因應基板的厚度改變及/或變更。氣墊188係設置以確保基板係維持在由下夾爪187所設定之高度。當氣墊188在處理期間提供主動區域之無接觸支撐,主動區域以外之基板區被夾持,以避免對太陽能模組造成污染和損壞。基板181可在主動層位於底側上之情形下進行處理,因為雷射劃線系統100不與基板接觸。 In one embodiment, there is no clamp on the side of the platform 184 relative to the clamp 186, which allows the substrate 181 to thermally expand or contract in the X direction. The moving and imaging system is aligned with the dynamic line to accommodate thermal expansion and contraction. It is important to note that this does not solve the X-slide and substrate tilt problems in the fixture. If clamped, the lower substrate surface remains fixed, as when the incident optical scribe beam 122 approaches the substrate 181 from below, the upper jaw 189 is movable to accommodate changes and/or changes in thickness of the substrate. The air cushion 188 is arranged to ensure that the substrate is maintained at the height set by the lower jaw 187. When the air cushion 188 provides contactless support of the active area during processing, the substrate area outside the active area is clamped to avoid contamination and damage to the solar module. The substrate 181 can be processed with the active layer on the bottom side because the laser scribing system 100 is not in contact with the substrate.

在另一實施例中,如圖6B中所繪示之包含兩個額外夾具286之另一種夾持機構282可加至平台184之相對的長邊。這些夾具286將由移動系統在Y方向主動趨動。該等夾具之「夾爪」之配置將與夾具186相同,因為夾具286之下夾爪287係固定以使在氣墊188上之基板「浮動」位置維持固定(從而集中),且夾具286之上夾爪289將可移動以因應厚度改變。但是這些夾具286將在X方向可彎曲,以允許基板的熱膨脹和收縮。他們將提供足夠的夾持以防止基板181傾斜,但不會在X方向施加過大的偏置力,此可因熱膨脹導致基板彎曲,或因基板收縮相反地導致繃緊。 In another embodiment, another clamping mechanism 282 including two additional clamps 286 as shown in FIG. 6B can be added to the opposite long sides of the platform 184. These clamps 286 will be actively actuated by the mobile system in the Y direction. The "jaws" of the clamps will be identical in configuration to the clamp 186 because the jaws 287 below the clamp 286 are fixed to maintain the "floating" position of the substrate on the air cushion 188 (and thus concentrated) and above the clamp 286 The jaw 289 will be movable to accommodate a change in thickness. However, these clamps 286 will be bendable in the X direction to allow for thermal expansion and contraction of the substrate. They will provide sufficient clamping to prevent the substrate 181 from tilting, but will not exert an excessive biasing force in the X direction, which may cause the substrate to bend due to thermal expansion, or may cause tension due to substrate shrinkage.

將剝離的材料由劃線上移除係由排氣系統190所執行。為了使工件的干擾降到最低,並確保有效地移除碎片,排氣系統190試圖避免在處理區中造成擾動。具有倒L形管之形狀的噴嘴192藉由使用真空單元300,或其它在本技藝具有通常知識者所知道的吸入裝置,將空氣從處理區之一側抽出。噴嘴192之L形的短橫向「腳」係打開並放置靠近基板181。噴嘴192之設計使壓力損失降到最低,以避免擾動和沿著排氣壁之粒子沉積。噴嘴區域通常係配置俾使達到至少10m/s至50m/s的空氣流速。噴嘴角度係設計以避免在處理區域中造成擾動,並在其本身和基板之間可具有一 可變化之距離。 Removal of the stripped material from the score line is performed by the exhaust system 190. In order to minimize interference from the workpiece and to ensure efficient removal of debris, the exhaust system 190 attempts to avoid causing disturbances in the processing zone. The nozzle 192 having the shape of an inverted L-shaped tube draws air from one side of the treatment zone by using a vacuum unit 300, or other inhalation device known to those skilled in the art. The short lateral "foot" of the L-shaped nozzle 192 is opened and placed adjacent to the substrate 181. The design of the nozzle 192 minimizes pressure loss to avoid disturbances and particle deposition along the exhaust wall. The nozzle area is typically configured to achieve an air flow rate of at least 10 m/s to 50 m/s. The nozzle angle is designed to avoid turbulence in the processing area and may have a between itself and the substrate The distance that can be changed.

此外,噴嘴192可用以跟隨光學劃線光束122,例如,藉由安裝至可由控制系統150控制之合適的移動系統196。在一實施例中,當基板181之處理區隨著平台下方之劃線頭的移動而移動時,此移動系統196使噴嘴可在X方向上跟隨劃線頭,且因此能始終維持在靠近基板181的位置。此外,為進一步避免可造成碎片從收集空間噴出以及在基板上之再沉積的靠近基板181之擾動,需特別注意流線化在管路中所有碎片移除之構件,以防止再循環渦流和擾動之發展。 Additionally, nozzle 192 can be used to follow optical scribing beam 122, for example, by mounting to a suitable movement system 196 that can be controlled by control system 150. In one embodiment, the movement system 196 allows the nozzle to follow the scribing head in the X direction as the processing zone of the substrate 181 moves with the movement of the scribing head below the platform, and thus can be maintained close to the substrate at all times. 181 location. In addition, in order to further avoid disturbances near the substrate 181 which can cause debris to be ejected from the collection space and redeposited on the substrate, special attention must be paid to streamlining all debris removal components in the pipeline to prevent recirculation eddy currents and disturbances. Development.

例如,若劃線頭170跟隨排氣系統190,擾動便較少,因為噴嘴192落後於劃線頭,所以處理區域並非「尾隨」移動之管路。但是,若如圖7A中所描繪,排氣系統190以高速跟隨劃線頭170時,即為1~3m/s之速度時,為簡單圓形橫截面之噴嘴192會自己創造足夠的氣體流動模式之擾動,以導致碎片噴出和再沉積。排氣系統190係安裝於劃線頭170之一側上,並跟隨劃線頭170。如圖7B所繪示,當噴嘴192沿X方向在劃線頭170之前移動時,由排氣系統移動所造成之擾動特別明顯。為了減輕這個問題,如圖7C所示,氣動力殼體194係加至噴嘴192的周圍,以減少其路徑中之渦流。 For example, if the scribing head 170 follows the exhaust system 190, the disturbance is less because the nozzle 192 lags behind the scribing head, so the processing area is not a "tailing" moving conduit. However, if the exhaust system 190 follows the scribing head 170 at a high speed as depicted in FIG. 7A, that is, at a speed of 1 to 3 m/s, the nozzle 192 having a simple circular cross section will create sufficient gas flow by itself. Disturbance of the pattern to cause debris to be ejected and redeposited. The exhaust system 190 is mounted on one side of the scribing head 170 and follows the scribing head 170. As shown in Fig. 7B, the disturbance caused by the movement of the exhaust system is particularly noticeable when the nozzle 192 is moved in the X direction before the scribing head 170. To alleviate this problem, as shown in Figure 7C, an aerodynamic housing 194 is applied around the nozzle 192 to reduce turbulence in its path.

圖2描繪已劃線之光伏打結構1。光伏打結構1可包含非晶及/或微晶矽(或其他光伏打材料)膜,該膜具有排列平行於薄膜表面之PIN或NIP接面結構。PIN/NIP結構可夾設於透明膜電極之間,透明膜電極可在基板,如可透光基板或覆板之一主要表面上之該複數區域之每一者連續地延伸。 Figure 2 depicts the scribed photovoltaic structure 1. The photovoltaic structure 1 can comprise an amorphous and/or microcrystalline germanium (or other photovoltaic material) film having a PIN or NIP junction structure aligned parallel to the surface of the film. The PIN/NIP structure may be interposed between the transparent film electrodes, and the transparent film electrodes may continuously extend on each of the plurality of regions on the main surface of the substrate such as the permeable substrate or the cover sheet.

圖2顯示槽6、7、和8。此結構之目的為建立由若干個電性串聯之太陽能電池段所組成的單片光伏打模組。透明電極層3係因此由第一隔離溝槽6所切割,此決定電池段之寬度。在製造過程期間,當整體層堆疊係以:層3-槽6-層4-槽7-層5-槽8之順序進行堆疊時,光電轉換半導體層4填充槽6。由來自透明的背面電極層5之材料填充的槽7使得相鄰電池之間可進行電接觸。光伏打結構1的背面電極5接觸相鄰電池之正面電極3。背面電極層5和光電轉換半導體4最後由第二隔離槽8分割。雷射劃 線系統100產生一或更多這些槽。 Figure 2 shows slots 6, 7, and 8. The purpose of this structure is to create a monolithic photovoltaic module consisting of several electrically connected solar cells. The transparent electrode layer 3 is thus cut by the first isolation trench 6, which determines the width of the battery segment. During the manufacturing process, when the entire layer stack is stacked in the order of layer 3 - slot 6 - layer 4 - slot 7 - layer 5 - groove 8, the photoelectric conversion semiconductor layer 4 fills the groove 6. The grooves 7 filled with the material from the transparent back electrode layer 5 allow electrical contact between adjacent cells. The back electrode 5 of the photovoltaic structure 1 contacts the front electrode 3 of the adjacent cell. The back electrode layer 5 and the photoelectric conversion semiconductor 4 are finally divided by the second isolation trench 8. Laser stroke Line system 100 produces one or more of these slots.

光伏打結構1可以例如以下之方式加工:首先在透明絕緣基板2上沉積透明電極層3,例如,藉由LPCVD之方法,即低壓化學汽相沉積為之。此透明電極層3,亦稱為透明導電氧化物TCO,包含例如ZnO、SnO2、及/或銦錫氧化物ITO,其後係受雷射劃刻以移除該透明電極層3之一部份以形成第一隔離槽6,第一隔離槽6將透明電極層3分割成複數個因此隔離之相鄰的層。 The photovoltaic structure 1 can be processed, for example, by first depositing a transparent electrode layer 3 on a transparent insulating substrate 2, for example, by a LPCVD method, that is, low pressure chemical vapor deposition. The transparent electrode layer 3, also referred to as a transparent conductive oxide TCO, comprises, for example, ZnO, SnO2, and/or indium tin oxide ITO, which is then subjected to laser scribing to remove a portion of the transparent electrode layer 3. In order to form the first isolation trench 6, the first isolation trench 6 divides the transparent electrode layer 3 into a plurality of adjacent layers which are thus isolated.

隨後,在此圖案化的透明電極層3上,採用電漿增強CVD沉積光電轉換層堆疊4。層堆疊4包含至少一個p型摻雜層、本質i層,以及例如薄非晶矽之n型摻雜層。可重複此操作以形成多接面非晶矽薄膜太陽能電池1。因此p-i-n接面可從微晶材料或從非晶和微晶材料之混合物形成,以建立該光電轉換層4。光電轉換半導體層4係接著遭受雷射劃刻,以移除光電轉換半導體層4之一部分,以形成槽7,槽7將光電轉換半導體層4分割成複數此等隔離之層4。 Subsequently, on this patterned transparent electrode layer 3, the photoelectric conversion layer stack 4 is deposited by plasma enhanced CVD. The layer stack 4 comprises at least one p-type doped layer, an intrinsic i-layer, and an n-type doped layer such as a thin amorphous germanium. This operation can be repeated to form a multi-junction amorphous germanium thin film solar cell 1. Thus the p-i-n junction can be formed from a microcrystalline material or from a mixture of amorphous and microcrystalline materials to create the photoelectric conversion layer 4. The photoelectric conversion semiconductor layer 4 is then subjected to laser scribing to remove a portion of the photoelectric conversion semiconductor layer 4 to form a trench 7, which divides the photoelectric conversion semiconductor layer 4 into a plurality of such isolated layers 4.

隨後,背面電極層5係沉積以填充槽7,且從而產生接觸線並亦覆蓋光伏打轉換半導體層4。此背面電極層5亦可為透明導電氧化物TCO,例如ZnO、SnO2、氧化銦錫ITO、或金屬層,例如鋁,或此等層之組合物。 Subsequently, the back electrode layer 5 is deposited to fill the trenches 7, and thereby a contact line is formed and also covers the photovoltaic conversion semiconductor layer 4. The back electrode layer 5 may also be a transparent conductive oxide TCO such as ZnO, SnO2, indium tin oxide ITO, or a metal layer such as aluminum, or a combination of such layers.

最後,光電轉換半導體層4和背面電極層5遭受雷射劃刻而形成第二隔離槽8,第二隔離槽8將光電轉換半導體層4分割成複數電串連之光活性層4或段。圖1所示之光伏打結構1係因此加工而成。TCO層3係分成複數電隔離之區域,此係由槽6之雷射劃線,以5-10毫米之間隔的劃過整個光伏打結構1,並延伸其全長而達成。在沉積之後,光電轉換半導體層4係由雷射劃刻。此需要劃於此層之槽7平行於在TCO層3中之初始槽,通常為沿其整個長度之5-30微米,且盡可能以介於10和150um之間距靠近初始槽6。 Finally, the photoelectric conversion semiconductor layer 4 and the back electrode layer 5 are subjected to laser scribing to form a second isolation trench 8, and the second isolation trench 8 divides the photoelectric conversion semiconductor layer 4 into a plurality of electrically connected photoactive layers 4 or segments. The photovoltaic structure 1 shown in Fig. 1 is thus processed. The TCO layer 3 is divided into a plurality of electrically isolated regions which are achieved by laser scribing of the grooves 6, across the entire photovoltaic structure 1 at intervals of 5-10 mm, and extending over the entire length thereof. After deposition, the photoelectric conversion semiconductor layer 4 is scribed by laser. The groove 7 which needs to be drawn into this layer is parallel to the initial groove in the TCO layer 3, typically 5-30 microns along its entire length, and as close as possible to the initial groove 6 between 10 and 150 um.

沉積背面電極層5後,雷射係用於形成第二隔離槽8,第二隔離槽8同時分割背面電極層5和光電轉換半導體層4,以完成複數段之電性串聯互連。槽8係劃刻以平行於在TCO層3中之初始槽6,通常為沿其 整個長度之5-30微米,且盡可能以介於10和150um之典型的間距靠近光電轉換半導體層中之槽7。 After depositing the back electrode layer 5, the laser system is used to form the second isolation trench 8, and the second isolation trench 8 simultaneously divides the back electrode layer 5 and the photoelectric conversion semiconductor layer 4 to complete the electrical interconnection of the plurality of segments. The groove 8 is scribed to be parallel to the initial groove 6 in the TCO layer 3, usually along its The entire length is 5-30 microns, and as close as possible to the grooves 7 in the photoelectric conversion semiconductor layer at a typical pitch of between 10 and 150 um.

所產生具有太陽能電池段之串連互連的光伏打結構1,可減少此等光伏打結構1的洩漏電流,且由整個電池板產生的電壓係由形成於每個電池內的電位及電池的數目之乘積所給予。通常情況下,1.4m2之電池板係劃分為50-200個電池,使整體電池板的輸出電壓在30-200V之範圍內。 The photovoltaic structure 1 having the series interconnection of the solar cell segments is generated, the leakage current of the photovoltaic structures 1 can be reduced, and the voltage generated by the entire battery panel is formed by the potential formed in each battery and the battery. The product of the number is given. Normally, a 1.4 m 2 panel is divided into 50-200 cells, so that the output voltage of the overall panel is in the range of 30-200V.

除了例如在美國專利第4292092號及日本專利第59172274號(美國第1985/4542578號)中描述之那些材料外,許多其他材料可用於製作薄膜太陽能電池1。其他同樣有效的裝置係用基於碲化鎘(CdTe)、銅銦聯硒化物(CIS)、銅銦鎵二硒化物(CIGS)、和結晶矽玻璃(CSG)等等之光電轉換半導體層4所製作。雷射劃線系統,如圖1之雷射劃線系統100,係通常用於在層3、4、5之一部份或全部劃刻槽6、7、8,以產生在此等裝置中具有串連連接之複數光伏打結構1。 In addition to those materials described in, for example, U.S. Patent No. 4,292,092 and Japanese Patent No. 59,172,274 (U.S. Patent No. 1985/4542578), many other materials can be used for the production of the thin film solar cell 1. Other equally effective devices are based on a photoelectric conversion semiconductor layer 4 based on cadmium telluride (CdTe), copper indium diselenide (CIS), copper indium gallium diselenide (CIGS), and crystalline bismuth glass (CSG). Production. A laser scribing system, such as the laser scribing system 100 of FIG. 1, is typically used to scribe grooves 6, 7, 8 in portions or all of layers 3, 4, 5 to create in such devices. A plurality of photovoltaic structures 1 having a series connection.

用以在各個層的3、4、5中劃刻槽6、7、和8的光學劃線光束122有時係從玻璃板之塗層側施加,但亦可從相反側施加,在此情況下,光束與膜相互作用前穿透玻璃。薄膜太陽能電池亦可製造在如金屬片之非透明基板上。在此情況下,輻照不可能通過基板2,因此所有的劃線處理需要光束從塗層之一側入射。在一些其它的情況下,太陽能電池板係於可彎曲之基板2,如薄金屬或聚合物片材上製作。在前者的情況下,輻照只可能來自塗佈之一側。在後者的情況下,輻照可來自塗佈之一側或穿過基板2。 The optical scribing beam 122 used to scribe the grooves 6, 7, and 8 in the respective layers 3, 4, 5 may be applied from the coated side of the glass sheet, but may also be applied from the opposite side, in which case Next, the beam penetrates the glass before it interacts with the membrane. Thin film solar cells can also be fabricated on non-transparent substrates such as metal sheets. In this case, the irradiation is impossible to pass through the substrate 2, so all the scribing processes require the light beam to be incident from one side of the coating. In some other cases, the solar panel is fabricated on a flexible substrate 2, such as a thin metal or polymer sheet. In the former case, the irradiation may only come from one side of the coating. In the latter case, the irradiation may come from one side of the coating or through the substrate 2.

將槽6放置於光伏打結構1上決定了段之寬度。段寬度之選擇,連同電池之尺寸,係根據光伏打結構1之期望電性,例如,更寬的段造成增加之洩漏電流ISC(SC=短路),更窄,即更多的段造成增加之開路電壓Voc。其他可影響分割槽6、7、8之寬度的考量包含:串聯連接、並聯連接或其他電池連接之組合之電池佈局配置、由受前面3和背面5電極層材料片電阻所影響之電池中的電流損耗之最佳化。 Placing the slot 6 on the photovoltaic structure 1 determines the width of the segment. The choice of the width of the segment, together with the size of the battery, is based on the desired electrical properties of the photovoltaic structure 1, for example, a wider segment causes an increased leakage current I SC (SC = short circuit), which is narrower, ie more segments cause an increase Open circuit voltage Voc. Other considerations that may affect the width of the dividing slots 6, 7, 8 include: a battery layout configuration of a series connection, a parallel connection, or a combination of other battery connections, in a battery affected by the sheet resistance of the front 3 and back 5 electrode layer sheets Optimization of current loss.

雷射劃線系統100任選地可利用使用控制系統150的動態劃線對齊以使第二劃線依循第一劃線定位,以求形成準確之劃線。為進一步 針對動態劃線對齊進行說明,美國專利申請公開號第2009/0324903A1係併入於此作為參考。 The laser scribing system 100 can optionally utilize dynamic scribing alignment using the control system 150 to position the second scribing line along the first scribing line to form an accurate scribing line. For further For a description of the dynamic scribe line alignment, U.S. Patent Application Publication No. 2009/0324903 A1 is incorporated herein by reference.

提供掃描單元(即機器視覺單元,諸如相機)和雷射劃線頭170之空間安排,從而使兩者以機械方式互相耦接。掃描單元能夠掃描先前所劃線之位置,此等位置係用以在當前之雷射劃線操作中,校正雷射劃線頭170之位置,以使劃線能緊密間隔,即便受到例如基板夾持瑕疵、基板熱收縮或擴張等等之影響。由掃描單元測得之數據係就預期的劃線位置進行分析,預期之劃線位置已在劃線前受玻璃的熱膨脹而擴張。這些預期的劃線位置接著用於一特定的離群值考量和趨勢計算內,以造成最終(且小)的動態劃線校正項目。 A spatial arrangement of the scanning unit (i.e., machine vision unit, such as a camera) and the laser scribing head 170 is provided such that the two are mechanically coupled to each other. The scanning unit is capable of scanning the positions of the previously scribed lines for correcting the position of the laser scribe head 170 in the current laser scribing operation so that the scribe lines can be closely spaced, even if subjected to, for example, substrate holders. The effect of enthalpy, heat shrinkage or expansion of the substrate, and the like. The data measured by the scanning unit is analyzed for the expected line position, and the expected line position has been expanded by the thermal expansion of the glass before scribing. These expected scribe positions are then used within a particular outlier consideration and trend calculation to cause a final (and small) dynamic scribe correction item.

劃線頭170可包含數個劃線頭,每一者支撐數個光學劃線光束122。光學劃線光束122之間的距離係大致等同於太陽能電池模組之段的寬度。因此,一個雷射劃線頭170之通過產生具有若干個分段線之完整條帶於太陽能電池模組上,例如若劃線頭包含四個光束則為四個,例如圖1之雷射劃線系統100。 The scribing head 170 can include a plurality of scribing heads, each supporting a plurality of optical scribing beams 122. The distance between the optical scribing beams 122 is substantially equivalent to the width of the segments of the solar cell module. Thus, the passage of a laser scribing head 170 produces a complete strip having a plurality of segmented lines on the solar cell module, for example four if the scribing head contains four beams, such as the laser stroke of FIG. Line system 100.

機械連接之掃描單元和劃線頭之間的中心到中心之距離係大於或等於完整條帶之寬度,較佳地,該距離大於完整條帶之寬度的2~4倍。受劃線條帶之線A的劃線和現存受劃線條帶之線B的檢測係同時進行。在劃線處理的開始,必須在不劃線之情況下執行數個(例如2-4個)檢測通過。劃線和檢測可在兩個劃線方向進行,因為測量數據係適當地排序。 The center-to-center distance between the mechanically coupled scanning unit and the scribing head is greater than or equal to the width of the complete strip, preferably, the distance is greater than 2 to 4 times the width of the complete strip. The line of the line A of the scribed strip and the line of the existing line B of the scribed line are simultaneously performed. At the beginning of the scribing process, several (eg, 2-4) test passes must be performed without scribing. The scribing and detection can be performed in both scribing directions because the measurement data is properly ordered.

此確保在不失準確度和解析度之情況下,有足夠的時間在控制系統中進行數學運算,例如數據分析、離群值演算法和近似法。理想地,雷射劃線頭170旁僅有一掃描單元。在雷射劃線頭170中,總是針對具有例如四個光學劃線光束122之完整條帶進行校正。由於一條帶內的四個光學劃線光束122之間的距離之變化為可忽略的,此為之吾人欲補償之整體校正的有效解決方案。 This ensures that there is sufficient time for mathematical operations in the control system, such as data analysis, outlier algorithms, and approximations, without loss of accuracy or resolution. Ideally, there is only one scanning unit beside the laser scribing head 170. In the laser scribing head 170, correction is always made for a complete strip having, for example, four optical scribing beams 122. Since the change in distance between the four optical scribe beams 122 in a strip is negligible, this is an effective solution for the overall correction that we would like to compensate.

掃描單元為先進的機器影像系統,較佳地為直線掃描或2D陣列攝影機,結合遠心鏡和具有使對比程度最大化之最佳化波長的照明系統。直線掃描攝影機可在內部、外部、或與其位置同步觸發。其檢測特定 位置上的劃線,並將該劃線之位置發送至機器之控制系統150,此使數據流量最小化並可進行高速影像處理。作為一特殊的實施例,相機配方檢測到沿著劃線之一個以上,例如五個劃線位置,檢測離群值,以及,若未檢測到離群值,則將此等位置之平均值發送到控制系統150。此過程增加劃線檢測之可靠性。由於影像係於掃描單元和劃線頭170移動期間所擷取,因此取決於處理條件,該影像代表了十分之一毫米到幾毫米以上之劃線位置。因此,同樣在影像擷取過程中,發生較佳地為5×2毫米=10毫米之平均化且不影響準確度,此係因為在太陽能電池構件上之雷射劃線具有在短長度尺上之相對良好的平直度。 The scanning unit is an advanced machine imaging system, preferably a linear scanning or 2D array camera, combined with a telecentric mirror and an illumination system having an optimized wavelength that maximizes contrast. A line scan camera can be triggered internally, externally, or in sync with its position. Its detection specific The scribing in position and the location of the scribing is sent to the machine's control system 150, which minimizes data flow and enables high speed image processing. As a special embodiment, the camera recipe detects one or more of the scribe lines, for example, five scribe positions, detects outliers, and, if no outliers are detected, sends the average of the positions. Go to control system 150. This process increases the reliability of the scribing detection. Since the image is taken during the movement of the scanning unit and the scribing head 170, the image represents a scribing position of one tenth of a millimeter to several millimeters or more depending on the processing conditions. Therefore, also in the image capturing process, an average of 5 × 2 mm = 10 mm is generated without affecting the accuracy, because the laser scribing on the solar cell member has a short length ruler. Relatively good straightness.

在一實施例中,動態劃線對齊運算法總是預期已在劃線時估算基板之熱膨脹或收縮校正之劃線位置。藉由掃描從P1劃線之兩個對齊交差,可針對每個基板檢測熱膨脹或收縮,且因此可檢測到在開始劃線前模組目前的膨脹或收縮。所確定的熱膨脹或收縮係接著加至提供給雷射劃線工具之目標劃線佈局。因此,預期和實際之線位置之間的差異(偏移)被最小化,並主要包含先前劃線處理之機器所判讀之不準確度。這通常會導致動態劃線運算法之小幅校正值,且對於相鄰線之快速及平穩的劃線十分關鍵,可避免雷射劃線頭之振盪等等。 In one embodiment, the dynamic scribe line alignment algorithm always expects to have estimated the scribe line position of the thermal expansion or contraction correction of the substrate at the time of scribing. By scanning the two aligned intersections from the P1 scribe line, thermal expansion or contraction can be detected for each substrate, and thus the current expansion or contraction of the module prior to beginning the scribe line can be detected. The determined thermal expansion or contraction is then applied to the target scribing layout provided to the laser scribing tool. Therefore, the difference (offset) between the expected and actual line positions is minimized, and mainly includes the inaccuracy of the machine previously processed by the scribing process. This usually results in a small correction of the dynamic scribing algorithm and is critical for fast and smooth scribing of adjacent lines, avoiding oscillations of the laser scribing head, and the like.

在特定條帶之劃線期間,由於掃描和劃線單元係以固定之距離連接,因此配方之佈局訊息必須提供之訊息為掃描單元之攝影機的視線範圍中預期哪一條帶和哪一特定線的位置。 During the scribing of a particular strip, since the scanning and scribing units are connected at a fixed distance, the layout message of the recipe must provide a message as to which strip and which particular line is expected in the line of sight of the camera of the scanning unit. position.

控制系統150分析掃描系統的原始現存劃線位置數據以找出離群值,藉此在第一個實例中離群值係定義為在計算過熱膨脹或收縮後,在既定之第一容許帶以外之劃線位置-較佳地小於0.5毫米-位於預期之現存劃線位置的周圍。離群值可能來自玻璃上的刮痕、其他的玻璃缺陷,遺漏的劃線點、及其相似物等。圖5描繪離群值移除處理。由於劃線位置之預測及熱膨脹或收縮之考量,此可定義之容許帶已非常小,從而得到迅速檢測離群值之有效的方法。控制系統150可包含處理器以計算數據。 Control system 150 analyzes the original existing scribe line position data of the scanning system to find outliers, whereby in the first example the outliers are defined as being outside the established first allowable band after calculating the overheat expansion or contraction. The scribe line position - preferably less than 0.5 mm - is located around the expected existing scribe line position. Outliers may result from scratches on the glass, other glass defects, missing score lines, and the like. Figure 5 depicts the outlier removal process. Due to the prediction of the position of the scribe line and the consideration of thermal expansion or contraction, this configurable allowable band is very small, resulting in an efficient method for quickly detecting outliers. Control system 150 can include a processor to calculate data.

在第一實施例中,該運算法分析第一容許帶以外之現存的離群值之原始數據,並將無效,即離群值位置數據點設定至劃線之預測目標 坐標,同時考量熱膨脹或收縮。此後,在第二非常小的容許帶中-較佳地小於50μm,將刪除仍存在之離群點位置數據點,此係藉由計算至少最後及下一個有效位置(即有效的非離群值劃線位置)之間的平均值,以及接著將無效的離群值位置取代為計算後之平均位置,此等計算後之平均位置係因此自動位於第二容許帶內。在此第二容許帶內雷射劃線頭之動作依循有效位置數據點之趨勢。可進行有效劃線位置數據點之間之進一步的回歸,以增加雷射劃線頭動作之準確度和平滑性。 In the first embodiment, the algorithm analyzes the original data of the existing outliers other than the first allowable band, and sets the invalid, ie, outlier, data points to the predicted target of the scribing Coordinates, while considering thermal expansion or contraction. Thereafter, in the second very small allowable band - preferably less than 50 μm - the remaining outlier position data points will be deleted by calculating at least the last and next valid positions (ie, effective non-outliers) The average between the scribe positions), and then the invalid outlier position is replaced by the calculated average position, and the calculated average position is thus automatically located within the second allowable band. The action of the laser dash head in the second allowable band follows the trend of the effective position data points. Further regression between valid scribe position data points can be performed to increase the accuracy and smoothness of the laser scribe head motion.

特別對於在劃線之開頭或結尾之離群值,重要的是適當地估計有效位置數據點的趨勢。例如,若在一新劃線之第一劃線位置位於第一容許帶之外,則該第一離群值劃線位置可根據後續的數據點之位置的線性或其它回歸所產生之最有可能的位置加以取代(即下一個有效的劃線位置)。這個後向回歸確保第一劃線位置的正確位置以及進一步數據校正步驟的準確度。 Especially for outliers at the beginning or end of a line, it is important to properly estimate the trend of the effective position data points. For example, if the first underline position of a new line is outside the first allowable band, the first outlier line position may be generated based on the linearity or other regression of the position of the subsequent data point. The possible positions are replaced (ie the next valid line position). This backward regression ensures the correct position of the first scribing position and the accuracy of the further data correction step.

更進一步的實施例使用有效數據點的趨勢預測第一劃線位置檢測之數值。該運算法藉由計算直方圖分析趨勢數值之數據組,並將無效數值(離群值)取代為目標位置數值。其後,其進行線性回歸以如前所述地,從有效劃線位置判定最有可能的位置。 A still further embodiment predicts the value of the first scribe position detection using the trend of the valid data points. The algorithm calculates the data set of the trend values by calculating the histogram and replaces the invalid value (outlier value) with the target position value. Thereafter, it performs linear regression to determine the most likely position from the effective scribe position as previously described.

藉由這些方法,可處理具有間斷線(例如圖案2之起始和結束,或在橫向或垂直隔離線之圖案2)之複雜佈局,而無需劃線操作停止(即移動軸停止),此可增加平行性並最佳化節拍時間以進行高速處理。 By these methods, a complex layout with discontinuous lines (eg, the start and end of pattern 2, or pattern 2 of horizontal or vertical isolation lines) can be processed without the need for a scribing operation to stop (ie, moving the axis to stop), Parallelism can be added and takt time optimized for high speed processing.

儘管已針對各種實施例進行前述的發明之描述,吾人應理解此等實施例之本質並非僅為示例性的。各種不脫離由下列請求項所闡述之本發明的實施例皆落於本發明之範圍和精神內。 While the foregoing invention has been described in terms of various embodiments, it is understood that The various embodiments of the invention, which are set forth in the claims below, are intended to be within the scope and spirit of the invention.

100‧‧‧雷射劃線系統 100‧‧‧Laser marking system

110‧‧‧雷射源 110‧‧‧Laser source

112‧‧‧雷射光束 112‧‧‧Laser beam

115‧‧‧分光器 115‧‧‧ Spectroscope

120‧‧‧繞射光學元件 120‧‧‧Diffractive optical components

122‧‧‧光學劃線光束 122‧‧‧Optical line beam

124‧‧‧不需要的繞射光束 124‧‧‧Unwanted diffracted beam

130‧‧‧散射元件 130‧‧‧scattering elements

140‧‧‧聚焦光學件 140‧‧‧Focus optics

150‧‧‧控制系統 150‧‧‧Control system

160‧‧‧光學光閘 160‧‧‧ optical shutter

164‧‧‧光學光閘 164‧‧‧ optical shutter

170‧‧‧劃線頭 170‧‧‧ scribe head

180‧‧‧工件支撐件 180‧‧‧Workpiece support

190‧‧‧排氣系統 190‧‧‧Exhaust system

Claims (18)

一種使用動態劃線對齊之雷射劃線方法,包含:決定已考量熱膨脹和收縮之預期劃線位置;制定第一容許帶和第二容許帶,該第一容許帶和該第二容許帶具有圍繞該決定的預期劃線位置之各自的預定條帶位置;使用掃描單元測量劃線位置;決定該劃線位置是否在該第一容許帶內;若該測量之劃線位置在該第一容許帶內,決定該劃線位置是否在該第二容許帶內;若該測量之劃線位置在該第二容許帶內,則接受該測量之劃線位置並使用該測量之劃線位置進行劃線對齊;若該測量之劃線位置不在該第一容許帶內,則將該劃線位置設定在該決定的預期劃線位置;若該測量之劃線位置不在該第二容許帶內,則決定該測量之劃線位置是否為新的掃描中之第一劃線位置;若該測量之劃線位置為該第一劃線位置,則將該測量之劃線位置設定在根據僅沿著一掃描之以下劃線位置所計算出的位置;且若該測量之劃線位置不是該第一劃線位置,將該測量之劃線位置設定至根據沿著掃描之先前或後來的劃線位置或其組合而計算之位置。 A laser scribing method using dynamic scribing alignment, comprising: determining an expected scribing position for which thermal expansion and contraction have been considered; formulating a first allowable band and a second allowable band, the first allowable band and the second allowable band having a predetermined strip position around the determined line position of the decision; measuring the line position using the scanning unit; determining whether the line position is within the first allowable band; if the measured line position is at the first tolerance In the tape, determining whether the line position is within the second allowable band; if the measured line position is within the second allowable band, accepting the measured line position and using the measured line position Line alignment; if the measured scribe line position is not within the first allowable band, the scribe line position is set at the determined expected scribe line position; if the measured scribe line position is not within the second allowable band, then Determining whether the measured scribing position is the first scribing position in the new scan; if the measured scribing position is the first scribing position, setting the measured scribing position according to only one along Scanning a position calculated by the scribing position; and if the measured scribing position is not the first scribing position, the measured scribing position is set to be based on a previous or subsequent scribing position along the scan or a combination thereof Calculated location. 一種用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,該系統包含:雷射源;繞射光學元件,用以從由該雷射源提供的雷射光束產生一或更多光學劃線光束;阻擋元件、散射元件、或其組合物,該阻擋元件和該散射元件放置於該繞射光學元件和該大面積基板之間,並用以阻擋不需要的繞射光學光束之一或更多部分、該等光學劃線光束之一或更多者、或其組合物;聚焦光學件,用以集中該等光學劃線光束;以及 控制系統,用以將該等光學劃線光束相對於該基板動態定位,並控制該雷射源、該繞射光學元件之對齊及間隔、該阻擋元件、該掃描元件、或其組合物、以及該聚焦光學件。 A laser scribing system for removing portions of a film layer disposed on a large area substrate, the system comprising: a laser source; a diffractive optical element for generating from a laser beam provided by the laser source One or more optical scribing beams; a blocking element, a scattering element, or a combination thereof, the blocking element and the scattering element being placed between the diffractive optical element and the large area substrate and for blocking unwanted diffraction One or more portions of an optical beam, one or more of the optical scribe beams, or a combination thereof; a focusing optic for concentrating the optical scribe beams; a control system for dynamically positioning the optical scribe beam relative to the substrate and controlling the laser source, the alignment and spacing of the diffractive optical elements, the blocking element, the scanning element, or a combination thereof, and The focusing optics. 如申請專利範圍第2項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中該阻擋元件包含光學光閘系統,該光學光閘系統包含一或更多光閘元件,用以減少所使用的該等光學劃線光束之數目。 A laser scribing system for removing a portion of a film layer disposed on a large area substrate, as in claim 2, wherein the blocking element comprises an optical shutter system comprising one or more A shutter element for reducing the number of such optical scribe beams used. 如申請專利範圍第2項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中該阻擋元件包含光學光閘系統,該光學光閘系統包含一或更多光閘元件,用以阻擋該等不需要的繞射光束通過。 A laser scribing system for removing a portion of a film layer disposed on a large area substrate, as in claim 2, wherein the blocking element comprises an optical shutter system comprising one or more A shutter element for blocking the passage of the unwanted diffracted beams. 如申請專利範圍第4項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中該光閘元件包含複數指部,用以阻擋該等不需要的繞射光束通過。 A laser scribing system for removing a portion of a film layer disposed on a large-area substrate, as in claim 4, wherein the optical gate element includes a plurality of fingers for blocking the unwanted diffraction The beam passes through. 如申請專利範圍第3項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中該光學光閘系統包含一梳形濾波器。 A laser scribing system for removing a portion of a film layer placed on a large-area substrate, as in claim 3, wherein the optical shutter system comprises a comb filter. 如申請專利範圍第3項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中該光閘元件包含複數指部,用以減少所使用的該等光學劃線光束之數目。 A laser scribing system for removing a portion of a film layer disposed on a large-area substrate, as in claim 3, wherein the optical gate element includes a plurality of fingers for reducing the optical strokes used The number of line beams. 如申請專利範圍第2項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中該散射元件包含該等光學劃線光束通過之複數透明區域,以及該等不需要的繞射光束通過之複數散射區域。 a laser scribing system for removing a portion of a film layer disposed on a large-area substrate, wherein the scattering element includes a plurality of transparent regions through which the optical scribing beams pass, and such Unwanted diffracted beams pass through the complex scattering regions. 如申請專利範圍第8項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中該等散射區域包含散射粒子,以造成該等不需要的 繞射光束之散射。 A laser scribing system for removing a portion of a film layer disposed on a large-area substrate, as in claim 8 wherein the scattering regions comprise scattering particles to cause such unwanted Scattering of the diffracted beam. 如申請專利範圍第8項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中該等散射區域包含一表面,具有用以造成該等不需要的繞射光束散射的紋理。 A laser scribing system for removing a portion of a film layer disposed on a large-area substrate, as in claim 8 wherein the scattering regions comprise a surface having such unwanted diffraction The texture of the beam scattering. 一種用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,該系統包含:平台,其中心部具有一分離區,該分離區用以使雷射劃線頭可從該平台之下方在該基板上操作;氣墊,形成於該平台之表面的上方,該氣墊用以將該基板從該平台之該表面升起,該平台包含複數通道,一氣體係流動於該等通道中以形成在該平台之該表面的上方之該氣墊;以及夾持系統,用以定位待由該劃線頭所操作之該基板,該夾持系統包含移動系統,用以藉由一或更多第一夾具在與該劃線頭之移動方向正交的方向移動該基板,該一或更多第一夾具係放置在該平台之一側,該等第一夾具之每一者包含可調式上夾爪和固定式下夾爪,該下夾爪係設置在與該表面的上方之該氣墊等高的高度上,該下夾爪用以使該基板可平放於該下夾爪上。 A laser scribing system for removing a portion of a film layer placed on a large-area substrate, the system comprising: a platform having a separation portion at a central portion thereof for enabling a laser scribing head to be The underside of the platform is operated on the substrate; an air cushion is formed above the surface of the platform, the air cushion is used to lift the substrate from the surface of the platform, the platform comprises a plurality of channels, and a gas system flows thereon a channel formed in the channel above the surface of the platform; and a clamping system for positioning the substrate to be operated by the scribing head, the clamping system including a movement system for More first jig moves the substrate in a direction orthogonal to a moving direction of the scribing head, the one or more first jigs are placed on one side of the platform, and each of the first jigs includes Adjusting the upper jaw and the fixed lower jaw, the lower jaw being disposed at a height equal to the air cushion above the surface, the lower jaw being configured to lay the substrate flat on the lower jaw . 如申請專利範圍第11項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中該上夾爪和該下夾爪包含玻璃強化塑料。 A laser scribing system for removing a portion of a film layer disposed on a large-area substrate, as in claim 11, wherein the upper jaw and the lower jaw comprise a glass reinforced plastic. 如申請專利範圍第11項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中該夾持系統的該移動系統係更用以藉由該等第一夾具及放置於該平台之相對側上的一或更多第二夾具將基板移動遠離該等第一夾具,該等第一夾具在該劃線頭之移動方向為固定,該等第二夾具在該劃線頭之移動方向為可彎曲,以使該基板可熱膨脹。 A laser scribing system for removing a portion of a film layer placed on a large-area substrate, as in claim 11, wherein the moving system of the clamping system is further used by the first jig And one or more second clamps disposed on opposite sides of the platform move the substrate away from the first clamps, the first clamps are fixed in a moving direction of the scribing heads, and the second clamps are in the The direction of movement of the scribing head is bendable to allow the substrate to thermally expand. 如申請專利範圍第13項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中該等第二夾具之每一者包含可調式上夾爪和固定式下夾爪,該下夾爪設置在與該表面的上方之該氣墊等高的高度上,該下夾爪用以使該基板可平放於該下夾爪上。 A laser scribing system for removing a portion of a film layer disposed on a large-area substrate, as in claim 13, wherein each of the second jigs includes an adjustable upper jaw and a fixed lower portion a jaw disposed at a height equal to the air cushion above the surface, the lower jaw being adapted to allow the substrate to lie flat on the lower jaw. 一種用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,該系統包含:雷射源;劃線頭,用以從該雷射源接收雷射光束並從該處發出一或更多光學劃線光束,該劃線頭包含一繞射光學元件和聚焦光學件,該繞射光學元件係用以從所接收之雷射光束產生一或更多光學劃線光束,該聚焦光學件係用以集中所產生之光學劃線光束;一或更多光閘,設置在該劃線頭之外部部分上,該等光閘係用以繞實質上平行於該等聚焦光學劃線光束之軸旋轉,並選擇性地阻擋該等聚焦光學劃線光束之一或更多者;以及控制系統,用以將該等光學劃線光束相對於該基板動態定位,及控制該雷射源、該繞射光學元件之對齊及間隔、該等光閘、以及該聚焦光學件。 A laser scribing system for removing portions of a film layer disposed on a large area substrate, the system comprising: a laser source; a scribing head for receiving a laser beam from the laser source and from there Generating one or more optical scribing beams, the scribing head comprising a diffractive optical element and a focusing optic for generating one or more optical scribing beams from the received laser beam, The focusing optics are used to concentrate the generated optical scribing beam; one or more shutters are disposed on an outer portion of the scribing head for winding substantially parallel to the focusing optics An axis of the scribe beam rotates and selectively blocks one or more of the focused optical scribe beams; and a control system for dynamically positioning the optical scribe beam relative to the substrate and controlling the ray A source, an alignment and spacing of the diffractive optical elements, the shutters, and the focusing optics. 一種用以操作移除放置於大面積基板上的薄膜層之部分的雷射劃線系統之方法,該系統包含雷射源、劃線頭,用以從該雷射源接收雷射光束並從該處發出一或更多光學劃線光束,該劃線頭包含一繞射光學元件和聚焦光學件,該繞射光學元件係用以從所接收之雷射光束產生一或更多光學劃線光束,該聚焦光學件係用以集中所產生之光學劃線光束、一或更多光閘,設置在該劃線頭之外部部分上,該等光閘係用以繞實質上平行於該等聚焦光學劃線光束之軸旋轉,並選擇性地阻擋該等聚焦光學劃線光束之一或更多者;以及控制系統,用以將該等光學劃線光束相對於該基板動態定位,及控制該雷射源、該繞射光學元件之對齊及間隔、該等光閘、以及該聚焦光學件,本方法包含:識別不期望由該等聚焦光學劃線光束所劃刻之區域; 以同步的方式旋轉該等光閘之一或更多者,俾使該等聚焦光學劃線光束係阻擋於在不期望由該等聚焦光學劃線光束所劃刻之該區域中劃線,當該等光閘通過不期望由該等聚焦光學劃線光束所劃線之該區域時,該等光閘繼續旋轉,俾使當該劃線頭已離開不期望由該等聚焦光學劃線光束所劃線之該區域時,該等聚焦光學劃線光束沒有被阻擋。 A method of operating a laser scribing system for removing portions of a film layer disposed on a large area substrate, the system including a laser source, a scribing head for receiving a laser beam from the laser source and Equivalent to one or more optical scribe lines, the scribe head comprising a diffractive optical element and a focusing optic for generating one or more optical scribe lines from the received laser beam a beam, the focusing optics for concentrating the generated optical scribe beam, one or more shutters, disposed on an outer portion of the scribe head, the shutters being used to be substantially parallel to the Focusing on an axis of the optical scribing beam and selectively blocking one or more of the focused optical scribing beams; and a control system for dynamically positioning the optical scribing beam relative to the substrate, and controlling The laser source, the alignment and spacing of the diffractive optical elements, the shutters, and the focusing optics, the method includes: identifying regions that are not desired to be scribed by the focused optical scribing beams; Rotating one or more of the shutters in a synchronized manner such that the focused optical scribing beams are blocked from scribing in regions that are not desired to be scribed by the focused optical scribing beams The shutters continue to rotate when the shutters are not desired to be scribed by the focused optical scribe beam, such that when the scribe has left undesired by the focused optical scribe beam The focused optical scribing beams are not blocked when the area is scribed. 一種用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,該系統包含:平台,該平台中心部具有一分離區,該分離區用以使劃線頭從該平台之下方在該基板上操作;以及排氣系統,用以從該基板的處理區域移除剝離的材料,該排氣系統包含一噴嘴,位於該剝離的材料受移除的該處理區域上方且靠近該處理區域,該噴嘴用以在該劃線頭前方,在同於該劃線頭之移動方向之方向移動,並當由該劃線頭在該基板上執行劃線而產生該剝離的材料時,從該處理區域移除該剝離的材料。 A laser scribing system for removing a portion of a film layer placed on a large-area substrate, the system comprising: a platform having a separation region at a central portion thereof for using a scribing head from the platform Operating on the substrate below; and an exhaust system for removing stripped material from the processing region of the substrate, the exhaust system including a nozzle above the treated region where the stripped material is removed and near In the processing area, the nozzle is used to move in the direction of the moving direction of the scribing head in front of the scribing head, and when the scribing head performs scribing on the substrate to generate the stripped material The stripped material is removed from the treatment zone. 如申請專利範圍第17項之用以移除放置於大面積基板上的薄膜層之部分的雷射劃線系統,其中一流線型夾套圍繞該噴嘴,該流線型夾套係用以減少由該噴嘴之移動所造成之擾動。 A laser scribing system for removing a portion of a film layer placed on a large-area substrate, wherein the first-line linear jacket surrounds the nozzle, and the streamlined jacket is used to reduce the nozzle Disturbance caused by the movement.
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