JP2000315809A - Fabrication of integrated thin film solar cell and patterning system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance characteristics while increasing yield by forming a lower electrode on one major surface of an insulating substrate then removing a part of a semiconductor film or an upper electrode film by making a trench in the outer circumferential part of the part being removed and stripping the part being removed. SOLUTION: A trench is made only in a semiconductor film 92 by means of a trenching tool, e.g. a diamond pin, on the opposite sides of a part being removed using an Mo film as a stopper. The semiconductor film 92 is then stripped from the part being removed by means of a scraper 16, or the like. Subsequently, an upper electrode film is formed to cover the semiconductor film 92 and a lower electrode 91 on an insulating substrate 90 exposed by removing the semiconductor film 92. That film is connected electrically with the lower electrode 91 through a split part of the semiconductor film 92. Subsequently, the semiconductor film 92 and the upper electrode film are removed partially in stripe and split into stripe. An integrated solar cell is formed by making a trench only in the semiconductor film 92 and the upper electrode film and the upper electrode film of each cell unit is connected in series with the lower electrode 91 of an adjacent unit cell.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of manufacturing an integrated thin-film solar cell and a patterning apparatus.

[0002]

2. Description of the Related Art CuInSe ₂ (CIS), which is a compound semiconductor film (chalcopyrite structure semiconductor film) comprising a group Ib element, a group IIIb element and a group VIb element, or Cu (In, Ga) Se ₂ (a solid solution of Ga). The structure and manufacturing method of a thin-film solar cell module using CIGS) or CuInS ₂ for the light absorbing layer have been reported (for example, 13TH EUROPEAN).
PHOTOVOLTAIC SOLAR CONFERE
NCE 1995 p. 1451-1455). In such a CIS thin-film solar cell, an integrated structure in which a plurality of unit cells are connected in series on a substrate is generally used.

An example of a conventional method of manufacturing an integrated thin-film solar cell will be described with reference to FIG. First, as shown in FIG. 15A, a Mo film or the like serving as the lower electrode film 2 is formed on an insulating substrate 1 by a sputtering method, and then the Mo film is irradiated with a continuous wave laser beam L1. Are stripped to form a strip-shaped lower electrode film 2. Thereafter, as shown in FIG. 15B, a semiconductor film 3 composed of a laminated film of a p-type CuInSe ₂ thin film and an n-type CdS thin film is formed by an evaporation method, a sputtering method, a chemical deposition method, or the like. Then, FIG.
As shown in FIG. 5C, the semiconductor film 3 is divided into strips by a mechanical scribe method. Then, FIG.
(D), a transparent conductive film serving as the upper electrode film 4,
For example, a ZnO film or an ITO film is formed. And FIG.
As shown in FIG. 5E, the upper electrode film 4 is divided into strips by a mechanical scribe method. In this way,
An integrated thin-film solar cell is manufactured. In the integrated thin-film solar cell of FIG. 15E, the upper electrode film 4 of each unit cell 5
However, each unit cell 5 is connected in series by being connected to the lower electrode film 2 of the adjacent unit cell 5.

In the steps shown in FIGS. 15C and 15E, the thin film is divided by a mechanical scribe method by removing a part of the thin film with a cutter knife or a needle shown in FIG. 16A. Done by

[0005]

However, in the conventional mechanical scribe method, since a thin film such as a semiconductor film is removed at once by a needle or a cutter shown in FIG.
As shown in FIG. 16B, the width of the processed groove after removing the thin film was not constant. Further, when the adhesion between the lower electrode film 2 and the semiconductor film 3 is poor, the semiconductor film 3 is largely peeled off as shown in FIG. Was. For this reason, in the conventional mechanical scribe method, it is necessary to perform patterning in consideration of a shift during processing, and there is a problem that the effective area of the solar cell is reduced. Further, when the semiconductor film 3 is peeled off, there is a problem that poor contact between the lower electrode film 2 and the upper electrode film 4 is likely to occur. Therefore, the conventional manufacturing method described above has a problem that the characteristics and the yield of the integrated thin-film solar cell are reduced.

On the other hand, when the steps shown in FIGS. 15C and 15E are patterned by the laser scribe method, the semiconductor film 3 is damaged by heat at the time of laser irradiation, and the characteristics of the solar cell deteriorate. was there.

[0007] In order to solve the above-mentioned problems, an object of the present invention is to provide a method of manufacturing an integrated thin-film solar cell capable of manufacturing an integrated thin-film solar cell having high characteristics with a high yield, and a patterning apparatus used therefor.

[0008]

In order to achieve the above object, a method of manufacturing an integrated type thin film solar cell according to the present invention is directed to an integrated thin film solar cell in which two or more solar cell unit cells connected in series are formed on an insulating substrate. A method for manufacturing a thin film solar cell, comprising: forming a lower electrode film on one main surface of the insulating substrate;
A first step of dividing the lower electrode film into strips, a second step of forming a semiconductor film including a pn junction on the lower electrode film, and removing a part of the semiconductor film in a stripe shape A third step of dividing the semiconductor film into strips by
A fourth step of forming an upper electrode film on the semiconductor film and the lower electrode film which is exposed by removing the semiconductor film; and forming a part of the semiconductor film and a part of the upper electrode film in a stripe shape. A fifth step of dividing the upper electrode film into strips by removing the upper electrode film in a strip shape.
And at least one step selected from the fifth step includes a step of forming a groove in an outer peripheral portion of the part to be removed and peeling the part. In the above manufacturing method, when a part of the semiconductor film or a part of the upper electrode film is removed in a stripe shape, a groove is formed in an outer peripheral portion of a part to be removed, and then a peeling is performed. Therefore, according to the above manufacturing method, highly accurate patterning can be performed with little damage to the film, and an integrated thin-film solar cell having high characteristics can be manufactured with high yield.

In the above manufacturing method, the groove is formed by a first side surface on the part of the side to be removed and a second side surface different from the first side surface, the groove having a substantially V-shaped cross section. Wherein the average angle formed between the one main surface and the first side surface of the insulating substrate is smaller than the average angle formed between the one main surface and the second side surface of the insulating substrate. preferable. According to the above configuration, it is possible to prevent the film of the portion not to be removed from being peeled off, and to easily peel off the portion to be removed.

In the above manufacturing method, the average angle formed between the one main surface of the insulating substrate and the first side surface is 30 degrees or less, and the one main surface and the second side surface of the insulating substrate are provided. It is preferable that the average angle formed by the angles is 60 degrees or more and 90 degrees or less. According to the above configuration, it is possible to particularly prevent the film in the portion not to be removed from peeling, and it is particularly easy to peel off the portion to be removed.

In the above manufacturing method, the groove is formed by moving a groove forming tool having a contact surface having a substantially V-shaped cross section formed by two surfaces while pressing the contact surface against a film to be removed. When forming the groove, the average angle between the first surface of the partial surface to be removed, which is the surface forming the contact surface, and one main surface of the film to be removed is Moving the groove forming tool in a state smaller than an average angle formed by a second surface different from the first surface, which is a surface forming the contact surface, and one main surface of the film to be removed. Is preferred. According to the above configuration, it is possible to prevent the film of the portion not to be removed from being peeled off, and to easily peel off the portion to be removed.

In the above manufacturing method, the average angle between one principal surface of the film to be removed and the first surface is 30 degrees or less, and the one principal surface of the film to be removed and the second surface are different from each other. It is preferable that the average angle is 60 degrees or more and 90 degrees or less.
According to the above configuration, it is possible to particularly prevent the film in the portion not to be removed from peeling, and it is particularly easy to peel off the portion to be removed.

[0013] In the above manufacturing method, when forming the groove, an average angle of a direction in which the groove forming tool is moved among angles formed by one main surface of the film to be removed and the groove forming tool is set. It is preferable that the groove forming tool is moved in a state of not more than 15 degrees. According to the above configuration, it is possible to prevent the film of the portion that should not be removed from being peeled during patterning.

In the above manufacturing method, the semiconductor film is laminated on the compound semiconductor film containing a group I element, a group III element and a group VI element, and the compound semiconductor film containing a group II element and a group VI element. It is preferable to include a compound film.

Further, the patterning apparatus of the present invention is a patterning apparatus for patterning a thin film formed on a substrate, comprising: a substrate stage for holding the substrate; and a groove formation for forming a groove in the thin film. It is characterized by including a tool and a peeling tool for peeling the thin film on which the groove is formed. In the above patterning device, after a groove is formed on an outer peripheral portion of a portion to be removed using a groove forming tool, the groove can be peeled off using a peeling tool. Therefore, according to the patterning apparatus, high-precision patterning can be easily performed with little damage to the film, and an integrated thin-film solar cell having high characteristics can be manufactured with high yield.

In the above patterning apparatus, at least one selected from the groove forming tool, the peeling tool, and the substrate stage is movable in a direction parallel to one main surface of the substrate on which the thin film is formed. It is preferable that at least one selected from a forming tool, the peeling tool, and the substrate stage is movable in a direction perpendicular to the one main surface.

In the above patterning apparatus, it is preferable that the patterning apparatus further includes a processing load adjusting means, and the load for processing the thin film is adjusted by the processing load adjusting means in the groove forming tool and the peeling tool. With the above configuration,
Damage to the film during patterning can be reduced.

In the above patterning apparatus, it is preferable that the pattern forming apparatus further includes a rotatable tool holding unit, and the groove forming tool is rotatably held by the tool holding unit.
According to the above configuration, since the angle of the groove forming tool with respect to the film can be changed by rotating the groove forming tool, patterning can be performed with high reliability.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below.

Embodiment 1 In Embodiment 1, an example of a patterning apparatus of the present invention will be described.

FIG. 1 schematically shows a perspective view of the patterning apparatus 10 of the first embodiment. With reference to FIG. 1, a patterning apparatus 10 includes a gantry 11, a substrate stage 12 and a Z-table support 13 arranged on the gantry 11.
And a Z table 14 installed on the Z table support 13
, A groove forming tool 15 and a scraper (peeling tool) 16 installed on the Z table 14, and a controller 17. The groove forming tool 15 and the scraper 16
Through the machining load adjusting means 18 and 19, respectively,
It is installed on a table 14.

The substrate stage 12 has a vacuum suction function and fixes the substrate 20. The substrate stage 12 is movable in the direction of the XY plane in FIG. 1 (a direction parallel to one main surface of the substrate 20 on which the thin film is formed), and moves according to a command from the controller 17.

The Z table 14 is movable in the Z axis direction (a direction perpendicular to one main surface of the substrate 20 on which the thin film is formed), and moves according to a command from the controller 17.

The groove forming tool 15 is a tool for forming a groove in the thin film formed on the substrate 20. For example, a groove having a substantially V-shaped cross section (hereinafter, may be referred to as a V-shaped groove). It is a tool for forming. As the groove forming tool, for example, a diamond pin or a diamond wheel can be used.

FIG. 2 shows an example of a cross section of the groove forming tool 15 in a direction perpendicular to the traveling direction. As shown in FIG. 2A, the groove forming tool 15 has a contact surface 1 having a substantially V-shaped cross section formed by a first surface 15b and a second surface 15c.
5a is preferred. In the above configuration, by moving the contact surface while pressing the film to be removed, V
A groove can be formed. Furthermore, in the groove forming tool 15, it is preferable that the angle α formed by the first surface 15b and the second surface 15c is not less than 60 degrees and not more than 120 degrees. With the above-described structure, it is possible to prevent the film in a portion that should not be removed from being peeled when forming the groove.

Further, as shown in FIG. 2B, the groove forming tool 15 may have a cross-sectional shape that is asymmetrical with respect to the traveling direction. FIG. 3A shows a side view (viewed from the side in the traveling direction) and FIG. 3B shows a front view (viewed from the traveling direction) of an example of a diamond wheel having an asymmetrical cross-sectional shape. . As shown in FIG. 3B, of the two surfaces forming the contact surface 30a of the diamond wheel 30, the first surface 30b on the side from which the film is removed and the film 3 to be removed
It is preferable that the average value θv1 (average angle θv1) of the angle formed by the main surface of No. 1 (hatching is omitted) is 30 degrees or less. The average angle θv2 (average angle θv2) between the second surface 30c different from the first surface 30b and the film 31 to be removed among the two surfaces forming the contact surface is 6
It is preferable that it is 0 degree or more and 90 degrees or less. According to the above configuration, as described in the following embodiments, it is possible to prevent the film of a portion that should not be removed when forming a groove from being peeled, and to easily remove the film of a portion that should be removed. Become.

The scraper 16 shown in FIG.
This is a peeling tool for peeling a part of the thin film formed thereon. In addition, another peeling tool may be used instead of the scraper 16. The height of the groove forming tool 15 and the scraper 16 can be adjusted by moving the Z table 14 in the Z-axis direction in FIG. Also,
Only one of the groove forming tool 15 and the scraper 16 can be used.

The controller 17 includes the substrate stage 12,
Z table 14 and machining load adjusting means 18 and 1
9 is control means for controlling the operation of No. 9.

The machining load adjusting means 18 and 19 are composed of, for example, a leaf spring and a load meter, and are used for adjusting the machining load of the groove forming tool 15 or the scraper 16. The processing load adjusting means 18 and 19 may adjust the processing load by using another method such as air pressure.

The function of the groove forming tool 15 will be described with reference to FIG. As shown in FIG. 4, the groove forming tool 15 is pressed against a thin film 41 (semiconductor film or transparent conductive film) formed on the substrate 40 and moved in the direction of the arrow, thereby forming a groove (for example, a V-shaped groove) in the thin film 41. ) Can be formed.
By forming grooves on both sides of the portion to be removed using the groove forming tool 15, it is easy to remove the film with the scraper 16, and damage to the film is reduced.

The function of the scraper 16 will be described with reference to FIG. As shown in FIG. 5, by moving the scraper 16 in the direction of the arrow, the thin film 41 separated by the V-shaped groove can be peeled off, and a part of the thin film 41 can be linearly removed.

According to the patterning apparatus 10 of the first embodiment, a groove with little damage to the thin film is formed by the groove forming tool 15 on the outer peripheral portion of the portion to be removed of the thin film, and then the thin film is peeled by the scraper 16. Accordingly, chipping, cracking, film peeling, and the like can be suppressed in portions other than the peeled portion in the peeling step. Further, according to the patterning apparatus 10, a thin film can be patterned with high accuracy. Therefore, according to the patterning apparatus 10, for example, when manufacturing an integrated thin-film solar cell, an integrated thin-film solar cell having high characteristics and a high yield can be manufactured.

In the first embodiment, the case where the substrate stage 12 is movable in the XY plane direction has been described. However, the groove forming tool 15 and the scraper 16 may be movable in the XY plane direction.

In the first embodiment, the case where the groove forming tool 15 and the scraper 16 are movable in the Z-axis direction has been described. However, the case where the substrate stage 12 is movable in the Z-axis direction may be used.

Further, the patterning apparatus 10 may include two groove forming tools 15 and a scraper 16 arranged as shown in FIG. In the configuration shown in FIG. 6, by moving the two groove forming tools 15 and the scraper 16 in the direction of the arrow, the thin film can be peeled by one movement, and patterning can be performed with high productivity.

Further, the groove forming tool 15 and the scraper 1
6 may be integrated. FIG. 7 shows a perspective view of an example of the tool 70 in which the groove forming tool 15 and the scraper 16 are integrated. As shown in FIG. 7, the tool 70 includes two groove forming portions 70a, and a distance between the two groove forming portions 70a is a patterning width (for example, 20 μm to 200 μm).
Is approximately equal to According to the tool 70, patterning can be performed by one scan.

Embodiment 2 In Embodiment 2, another example of the patterning apparatus of the present invention will be described. Note that the patterning apparatus 10a according to the second embodiment is partially different from the apparatus described in the first embodiment, and a duplicate description will be omitted.

FIG. 8 schematically shows a perspective view of the patterning apparatus 10a of the second embodiment. Referring to FIG.
The patterning apparatus 10 a includes a gantry 11, a substrate stage 12 disposed on the gantry 11, and a Z-table support 1.
3 and Z table 1 installed on Z table support 13
4, a groove forming tool 15 and a scraper 16 installed on the Z table 14, and a controller 17.
The groove forming tool 15 and the scraper 16 are respectively
Z table 1 via machining load adjusting means 18 and 19
4 Further, the processing load adjusting means 18
Is connected to the turntable 80.

The rotary table 80 is a table that can rotate in the XZ plane of FIG. Therefore, in the patterning device 10a, the groove forming tool 15 is also rotatable in the XZ plane.

In the patterning apparatus 10a of the second embodiment, since the groove forming tool 15 can be rotated, the angle between the contact surface of the groove forming tool 15 and the thin film can be freely adjusted. Therefore, as described in the following embodiment, patterning can be performed with particularly high reliability. Also,
According to the patterning device 10a, the angle formed between the contact surface of the groove forming tool 15 and the thin film can be changed according to the type and thickness of the thin film, so that various thin films can be patterned with high reliability. .

Embodiment 3 In Embodiment 3, an example of a method for manufacturing an integrated thin-film solar cell of the present invention will be described.

In the method for manufacturing a solar cell according to Embodiment 3, first, as shown in FIG. 9A, a lower electrode film 91 is formed on one main surface of an insulating substrate 90, and then the lower electrode film 91 is formed. Divide into strips. The lower electrode film 91 is made of, for example, a Mo thin film and can be formed by a sputtering method or an evaporation method. The thickness of the lower electrode film 91 is, for example, 0.5 μm to
2.0 μm. The step of dividing the lower electrode film 91 into strips can be performed, for example, by a laser scribe method using a laser beam L1.

Thereafter, as shown in FIG. 9B, a semiconductor film 92 is formed, and a groove a is formed in the outer peripheral portion (both sides) of a portion of the semiconductor film 92 to be removed in a stripe shape. The semiconductor thin film 82 includes a pn junction composed of a p-type semiconductor film and an n-type semiconductor film (compound film). As the p-type semiconductor film, for example, a compound semiconductor film containing a Group I element, a Group III element, and a Group VI element can be used. In particular,
For example, CuInSe ₂ (CIS) film, Cu (In, G
a) A chalcopyrite structure semiconductor film such as a Se ₂ (CIGS) film or CuInS ₂ may be formed by an evaporation method, a sputtering method, or the like. As the n-type semiconductor film (compound film), for example, CdS, ZnO, Zn
A film made of a compound containing a group II element and a group VI element such as (O, OH), Zn (O, OH, S) may be formed by a chemical deposition method, a sputtering method, or the like.

Thereafter, as shown in FIG. 9C, portions of the semiconductor film 92 to be removed are removed in a stripe shape. The steps in FIGS. 9B and 9C will be described with reference to FIG. In the step of FIG. 9B, first, FIG.
As shown in (b), grooves a are formed on both sides of the portion to be removed using a groove forming tool such as a diamond pin. At this time, since the Mo film of the lower electrode film 91 has high hardness, the groove a is formed by using the Mo film as a stopper and the semiconductor film 9.
The groove a is formed only in the groove 2. Thereafter, as shown in FIG. 10C, the portion of the semiconductor film 92 to be removed is peeled off using a peeling tool such as a scraper. Note that the processing load for forming the groove and the processing load for peeling the semiconductor film 92 are adjusted so that damage to the film is reduced. The processing load is, for example, about 100 mN. Thus, a part of the semiconductor film 92 is removed in a stripe shape, and the semiconductor film 92 is divided into strips.

Thereafter, as shown in FIG. 9D, an upper electrode film 93 is formed so as to cover the semiconductor film 92 and the lower electrode film 91 exposed by removing the semiconductor film 92. As the upper electrode film 93, for example, a ZnO film, ZnO: Al
A film, an ITO film, or the like may be formed by a sputtering method. The upper electrode film 93 is electrically connected to the lower electrode film 91 through a divided portion of the semiconductor film 92.

Thereafter, as shown in FIG. 9E, the semiconductor film 92 and the upper electrode film 9 are removed by removing a part of the semiconductor film 92 and the upper electrode film 93 in a stripe shape.
3 is divided into strips. The process at this time is shown in FIG. In the step of FIG. 9E, first, as shown in FIGS. 11A and 11B, grooves are formed on both sides of a portion to be removed using a groove forming tool such as a diamond pin. At this time, since the Mo film of the lower electrode film 91 has high hardness, a groove is formed only in the semiconductor film 92 and the upper electrode film 93 using the Mo film as a stopper. Then, FIG.
As shown in (c), the portion of the upper electrode film 93 to be removed is peeled using a peeling tool such as a scraper. At this time, since the semiconductor film 92 is softer than the lower electrode film 91, the semiconductor film 92 is removed together with the upper electrode film 93. The processing load for forming the V-shaped groove and the processing load for peeling off the upper electrode film 93 are adjusted so that damage to the film is further reduced. Thus, a part of the upper electrode film 93 is removed in a stripe shape, and the semiconductor film 92 and the upper electrode film 93 are divided into strips.

The steps shown in FIGS. 10 and 11 correspond to the patterning device 10 or 10 described in the first or second embodiment.
This can be easily performed using a.

Thus, an integrated thin-film solar cell is formed. In the integrated thin-film solar cell of FIG. 9E, the upper electrode film 93 of each solar cell unit cell 94 is connected to the lower electrode film 91 of the adjacent solar cell unit cell 94, so that each solar cell unit cell 94 Are connected in series. FIG. 12 shows a partial plan view of the integrated thin-film solar cell of FIG.

In the steps shown in FIGS. 9B and 9E, a preferred shape and a preferred method of forming the groove a formed in the film to be removed will be described below.

The structure of the groove a is preferably substantially V-shaped in cross section and asymmetrical in the left-right direction. Regarding an example of a preferable structure of two grooves a formed on both sides of a portion to be removed,
FIG. 13 shows a sectional view in a direction perpendicular to the groove a. FIG.
3, the hatching is omitted for easy understanding.
Referring to FIG. 13, a preferred groove a is formed by a first side surface a1 on a part of the side from which the film is removed and a second side surface a2 different from the first side surface a1, and Side a
1 and one principal surface of the insulating substrate 90 (substantially parallel to one principal surface of the semiconductor film 92), the average value θa1 (average angle θa1) of the second side surface a2 and the insulating substrate 90 It is smaller than the average value θa2 of the angles formed by one main surface (hereinafter, referred to as average angle θa2). The average angle θa1 is particularly preferably 30 degrees or less. The average angle θa2 is 6
It is particularly preferable that the angle is 0 degree or more and 90 degrees or less.

The preferable groove a can be formed by moving the groove forming tool 15 at a predetermined angle while pressing the film to be removed. An example of a preferable process in this case will be described with reference to FIG. FIG. 14A is a view of an example of the groove forming tool 15 from the side of the film to be removed, and FIG. 14B is a cross-sectional view taken along line XX ′ of FIG. 14 (c) is a line Y- in FIG. 14 (b).
It is sectional drawing in Y '. In FIG. 14, hatching of the groove forming tool 15 is omitted.

As shown in FIG. 14A, the groove forming tool 1
5 has a substantially triangular pyramid shape, and a contact surface 15a that contacts the film is formed by a first surface 15b and a second surface 15c. Then, a V-shaped groove can be formed in the film by moving the contact surface 15a while pressing the film.

As shown in FIG. 14B, the contact surface 15a
It is preferable that the average value θh (average angle θh) of the angle in the direction in which the groove forming tool 15 is moved among the angles formed by the main surface of the film to be removed (semiconductor film 92) is 15 degrees or less. The angle α of the groove forming tool 15 (the angle of the contact surface in a direction parallel to the traveling direction) is preferably 75 degrees or more and 120 degrees or less. By setting the angle α to 75 degrees or more and 120 degrees or less, the contact area between the groove forming tool 15 and the film can be increased, and the film that should not be removed when forming the groove is prevented from peeling. it can.

As shown in FIG. 14C, when forming the groove, the first surface 15b on the side where the film is to be removed and one main surface of the film to be removed (one surface of the insulating substrate 90). Average value θv1 (average angle θv1) of the angle formed by the main surface and the main surface).
Is preferably smaller than the average value θv2 (average angle θv2) of the angle formed between the second surface 15c and one main surface of the film to be removed. The average angle θv1 is preferably equal to or less than 30 degrees. The average angle θv2 is preferably not less than 60 degrees and not more than 90 degrees. The process shown in FIG.
By using the patterning device 10a described in the above section, it can be easily implemented. That is, when forming two grooves a on both sides of the portion to be removed in a stripe shape, the first groove a is formed by inclining to the side of the portion from which the groove forming tool 15 is to be removed, and then the groove forming tool 15 is reversed. The second groove a may be formed to be inclined to the side.

According to the method of manufacturing the integrated thin-film solar cell described in the third embodiment, in the step of patterning the semiconductor film or the upper electrode film, after forming the groove with less damage to the thin film by the groove forming tool, Since the thin film is peeled off and patterned by a peeling tool, the thin film is not chipped except at the peeled portion in the peeling step, and cracks and film peeling do not occur. Therefore, according to the manufacturing method, an integrated thin-film solar cell having high characteristics can be manufactured with high yield. Further, when the groove described with reference to FIG.
In the case where the grooves are formed by the method described above, an integrated solar cell having particularly high characteristics and high yield can be manufactured.

In the second embodiment, the semiconductor film 92
9 (b) and 9 (c)) and the step of removing the semiconductor film 92 and the upper electrode film 93 (FIG. 9 (e)). However, by using the patterning method in any one of the steps, an integrated thin-film solar cell having higher characteristics can be manufactured with higher yield than in the conventional manufacturing method.

[0057]

As described above, according to the method for manufacturing an integrated thin-film solar cell of the present invention, an integrated thin-film solar cell having high characteristics can be manufactured with high yield.

Further, according to the patterning apparatus of the present invention, it is possible to manufacture an integrated type solar cell having high characteristics with little damage to a thin film, high precision patterning, and high characteristics.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an example of a patterning device of the present invention.

FIG. 2 is a view showing an example of a groove forming tool for the patterning apparatus of the present invention.

FIG. 3 is a view showing another example of a groove forming tool for the patterning apparatus of the present invention.

FIG. 4 is a perspective view showing a function of a groove forming tool in the patterning apparatus of the present invention.

FIG. 5 is a perspective view showing a function of a scraper in the patterning apparatus of the present invention.

FIG. 6 is a schematic view showing an example of an arrangement of a groove forming tool and a scraper in the patterning apparatus of the present invention.

FIG. 7 is a view showing an example of a tool for the patterning apparatus of the present invention.

FIG. 8 is a perspective view showing another example of the patterning apparatus of the present invention.

FIG. 9 is a process chart showing an example of a method for manufacturing an integrated thin-film solar cell of the present invention.

FIG. 10 is a perspective view showing a manufacturing process in the method of manufacturing an integrated thin-film solar cell according to the present invention.

FIG. 11 is a perspective view showing another manufacturing step in the method for manufacturing an integrated thin-film solar cell of the present invention.

FIG. 12 is a partial plan view showing an example of a solar cell manufactured by the method for manufacturing an integrated thin-film solar cell of the present invention.

FIG. 13 is a cross-sectional view illustrating an example of a groove formed in the method of manufacturing an integrated solar cell according to the present invention.

FIG. 14 is a diagram illustrating an example of a method of forming a groove in the method of manufacturing an integrated solar cell according to the present invention.

FIG. 15 is a process chart showing an example of a conventional method for manufacturing an integrated thin-film solar cell.

FIG. 16 is a diagram showing an example of a manufacturing process for a conventional method for manufacturing an integrated thin-film solar cell.

[Explanation of symbols]

 10, 10a Patterning device 12 Substrate stage 15 Groove forming tool 15a Contact surface 15b First surface 15c Second surface 16 Scraper (peeling tool) 20 Substrate 80 Rotary table 90 Insulating substrate 91 Lower electrode film 92 Semiconductor film 93 Upper electrode Film 94 solar cell unit cell a groove a1 first side surface a2 second side surface θa1, θa2, θh, θv1, θv2 average angle

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Takuyuki Negami 1006 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor Masatoshi Kitagawa 1006 Kazuma Kadoma, Kadoma-shi, Osaka Matsushita Electric Industrial Co., Ltd. F-term (reference) 5F051 EA02 EA10 EA11 EA13

Claims (11)

[Claims] 1. A method for manufacturing an integrated thin-film solar cell, comprising forming two or more solar cell unit cells connected in series on an insulating substrate, comprising: forming a lower electrode film on one main surface of the insulating substrate. A first step of dividing the lower electrode film into strips after forming, a second step of forming a semiconductor film including a pn junction on the lower electrode film, and striping a part of the semiconductor film. A third step of dividing the semiconductor film into strips by removing the semiconductor film, and a fourth step of forming an upper electrode film on the semiconductor film and the lower electrode film exposed by removing the semiconductor film. And a fifth step of dividing the upper electrode film into strips by removing both the semiconductor film and a part of the upper electrode film in a stripe shape, wherein the fifth step is selected from the third and fifth steps. At least one The method includes a step of forming a groove in an outer peripheral portion of the part to be removed and exfoliating the part. 2. The groove is a substantially V-shaped groove formed by a first side surface on the partial side to be removed and a second side surface different from the first side surface, The average angle formed between the one main surface of the insulating substrate and the first side surface is smaller than the average angle formed between the one main surface and the second side surface of the insulating substrate. Method for manufacturing an integrated thin-film solar cell. 3. The first main surface of the insulating substrate and the first main surface of the insulating substrate.
The integrated angle according to claim 2, wherein an average angle formed by the side surface of the insulating substrate is 30 degrees or less, and an average angle formed by the one main surface of the insulating substrate and the second side surface is 60 degrees or more and 90 degrees or less. Method of manufacturing a thin-film solar cell. 4. The formation of the groove is performed by moving a groove forming tool having a contact surface having a substantially V-shaped cross section formed by two surfaces while pressing the contact surface against a film to be removed. When forming the groove, the average angle between the first surface of the part of the film to be removed, which is a surface forming the contact surface, and one main surface of the film to be removed is equal to the contact angle. 2. The groove forming tool according to claim 1, wherein the groove forming tool is moved in a state smaller than an average angle formed by a second surface different from the first surface and a main surface of the film to be removed. A method for producing the integrated thin-film solar cell according to the above. 5. An average angle between one main surface of the film to be removed and the first surface is 30 degrees or less, and an average angle between one main surface of the film to be removed and the second surface. 5. The method for producing an integrated thin-film solar cell according to claim 4, wherein the angle is not less than 60 degrees and not more than 90 degrees. 6. An average angle of a direction in which the groove forming tool is moved out of angles formed by one main surface of the film to be removed and the groove forming tool when forming the groove is 15 degrees. The method for manufacturing an integrated thin-film solar cell according to claim 4 or 5, wherein the groove forming tool is moved in the following state. 7. The compound semiconductor film according to claim 1, wherein the semiconductor film includes a compound semiconductor film including a group I element, a group III element, and a group VI element, and a compound film including a group II element and a group VI element and stacked on the compound semiconductor film. The method for manufacturing an integrated thin-film solar cell according to claim 1, comprising: 8. A patterning apparatus for patterning a thin film formed on a substrate, comprising: a substrate stage for holding the substrate; a groove forming tool for forming a groove in the thin film; A stripping tool for stripping the thin film. 9. At least one selected from the groove forming tool, the peeling tool, and the substrate stage,
The thin film is movable in a direction parallel to one main surface of the substrate, and at least one selected from the groove forming tool, the peeling tool, and the substrate stage is movable in a direction perpendicular to the one main surface. The patterning apparatus according to claim 8, wherein 10. The patterning apparatus according to claim 8, further comprising a processing load adjusting unit, wherein a load for processing the thin film in the groove forming tool and the peeling tool is adjusted by the processing load adjusting unit. 11. The patterning apparatus according to claim 8, further comprising a rotatable tool holder, wherein the groove forming tool is rotatably held by the tool holder.