TWI498295B - A trench processing tool and a method for processing a trough of a thin-film solar cell and a trench processing apparatus - Google Patents
A trench processing tool and a method for processing a trough of a thin-film solar cell and a trench processing apparatus Download PDFInfo
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- TWI498295B TWI498295B TW102108199A TW102108199A TWI498295B TW I498295 B TWI498295 B TW I498295B TW 102108199 A TW102108199 A TW 102108199A TW 102108199 A TW102108199 A TW 102108199A TW I498295 B TWI498295 B TW I498295B
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- groove processing
- solar cell
- processing tool
- thin film
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- 239000010409 thin film Substances 0.000 title claims description 33
- 238000000034 method Methods 0.000 title claims description 18
- 239000010408 film Substances 0.000 claims description 17
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 238000006748 scratching Methods 0.000 claims description 2
- 230000002393 scratching effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 33
- 239000010410 layer Substances 0.000 description 16
- 238000003672 processing method Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052951 chalcopyrite Inorganic materials 0.000 description 3
- -1 chalcopyrite compound Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910017612 Cu(In,Ga)Se2 Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23C—MILLING
- B23C3/00—Milling particular work; Special milling operations; Machines therefor
- B23C3/28—Grooving workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
本發明係關於一種製造薄膜太陽電池時使用之槽加工工具及使用槽加工工具之槽加工方法以及槽加工裝置。The present invention relates to a groove processing tool used in the manufacture of a thin film solar cell, a groove processing method using the groove processing tool, and a groove processing device.
在薄膜太陽電池，一般為在基板上串聯有複數個單元胞之積體型構造。作為薄膜太陽電池之一例，針對將黃銅礦化合物半導體用作光吸收層之黃銅礦化合物系薄膜太陽電池之製造方法進行說明。此外，黃銅礦化合物，除了CIGS(Cu(In,Ga)Se2)以外，亦包含CIGSS(Cu(In,Ga)(Se,S)2)、CIS(CuInS2)等。In a thin film solar cell, an integrated structure in which a plurality of unit cells are connected in series on a substrate is generally used. As an example of a thin film solar cell, a method for producing a chalcopyrite compound-based thin film solar cell using a chalcopyrite compound semiconductor as a light absorbing layer will be described. Further, the chalcopyrite compound includes CIGSS (Cu(In,Ga)(Se,S)2), CIS (CuInS2), and the like in addition to CIGS (Cu(In,Ga)Se2).
圖7係顯示CIGS薄膜太陽電池之製程之示意圖。首先，如圖7(a)所示，在由鈉鈣玻璃(SLG)等構成之絕緣基板1上，藉由濺鍍法形成作為正側之下部電極之Mo電極層2後，對光吸收層形成前之薄膜太陽電池基板進行刻劃加工以形成下部電極分離用之槽S。Fig. 7 is a schematic view showing the process of a CIGS thin film solar cell. First, as shown in FIG. 7(a), on the insulating substrate 1 made of soda lime glass (SLG) or the like, the Mo electrode layer 2 as the lower side electrode is formed by sputtering, and the light absorbing layer is applied. The thin film solar cell substrate before formation is scribed to form a groove S for separating the lower electrode.
之後，如圖7(b)所示，在Mo電極層2上藉由蒸鍍法、濺鍍法等形成由化合物半導體(CIGS)薄膜構成之光吸收層3，在其上藉由CBD法(化學水浴沉積法)形成用於異質接合之由ZnS薄膜等構成之緩衝層4，在其上形成由ZnO薄膜構成之絕緣層5。接著，對透明電極層形成前之薄膜太陽電池基板，在從下部電極分離用之槽S往橫方向離開既定距離之位置，藉由刻劃加工形成到達Mo電極層2之電極間接觸件用之槽M1。Thereafter, as shown in FIG. 7(b), a light absorbing layer 3 composed of a compound semiconductor (CIGS) film is formed on the Mo electrode layer 2 by a vapor deposition method, a sputtering method, or the like, and the CBD method is used thereon. Chemical bath deposition method) A buffer layer 4 made of a ZnS film or the like for heterojunction is formed, and an insulating layer 5 made of a ZnO thin film is formed thereon. Next, the thin film solar cell substrate before the formation of the transparent electrode layer is formed at a position separated from the groove S for separating the lower electrode by a predetermined distance in the lateral direction, and the electrode-to-electrode contact member reaching the Mo electrode layer 2 is formed by scribing. Slot M1.
接著，如圖7(c)所示，從絕緣層5之上形成由ZnO：Al薄膜構成之作為上部電極之透明電極層6，作為具備利用光電轉換之發電所需之各功能層之太陽電池基板，藉由刻劃加工形成到達下部之Mo電極層2之電極分離用之槽M2。Next, as shown in FIG. 7(c), a transparent electrode layer 6 made of a ZnO:Al thin film as an upper electrode is formed on the insulating layer 5 as a solar cell having functional layers required for power generation by photoelectric conversion. On the substrate, a groove M2 for electrode separation reaching the lower Mo electrode layer 2 is formed by scribing.
在上述積體型薄膜太陽電池之製程，作為藉由刻劃對電極分離用之槽M1及M2進行槽加工之技術，使用雷射刻劃法與機械刻劃法。In the process of the above-described integrated thin film solar cell, as a technique for performing groove processing by grooves M1 and M2 for electrode separation, a laser scribing method and a mechanical scribing method are used.
雷射刻劃法，例如專利文獻1所揭示，照射藉由電弧燈等連續放電燈使Nd：YAG結晶激發傳送之雷射光，藉此形成電極分離用之槽。此方法，對光吸收層形成後之薄膜太陽電池基板形成槽之情形，會有在刻劃時因雷射光之熱使光吸收層3之光電轉換特性劣化之虞。In the laser scribing method, for example, as disclosed in Patent Document 1, the Nd:YAG crystal is excited by a continuous discharge lamp such as an arc lamp to excite the transmitted laser light, thereby forming a groove for electrode separation. According to this method, in the case where the thin film solar cell substrate after the formation of the light absorbing layer is formed into a groove, the photoelectric conversion characteristics of the light absorbing layer 3 are deteriorated by the heat of the laser light at the time of scribing.
機械刻劃法，例如專利文獻2及3所揭示，係對前端為尖細狀之金屬針(針)等之槽加工工具之刃尖施加既定壓力並使其按壓於基板且移動，藉此加工電極分離用之槽之技術。In the mechanical scribe method, for example, as disclosed in Patent Documents 2 and 3, a predetermined pressure is applied to a blade edge of a groove processing tool such as a metal needle (needle) whose tip end is tapered, and is pressed against a substrate and moved. The technique of the groove for electrode separation.
專利文獻1：日本特開平11-312815號公報Patent Document 1: Japanese Patent Laid-Open No. Hei 11-312815
專利文獻2：日本特開2002-94089號公報Patent Document 2: Japanese Laid-Open Patent Publication No. 2002-94089
專利文獻3：日本特開2004-115356號公報Patent Document 3: Japanese Laid-Open Patent Publication No. 2004-115356
專利文獻2及3所揭示之機械刻劃法中，槽加工工具之刃尖之形狀雖為尖細之針狀，但嚴格來說，為了使壓接於薄膜太陽電池之部分之接觸面積變廣，前端大致水平地切斷以呈平面。亦即，如圖8所示，前端部分為尖細之圓錐梯形。將此種形狀之槽加工工具8’按壓於應形成薄膜太陽電池基板之槽之薄膜(上下兩電極或光吸收層等之各種功能層)並同時 沿著刻劃預定線往Y方向相對移動，藉此進行槽加工。In the mechanical scribing method disclosed in Patent Documents 2 and 3, the shape of the tip of the groove processing tool is a sharp needle shape, but strictly speaking, in order to widen the contact area of the portion bonded to the thin film solar cell The front end is cut substantially horizontally to be flat. That is, as shown in Fig. 8, the front end portion is a tapered conical trapezoid. The groove processing tool 8' of such a shape is pressed against a film (a plurality of functional layers such as upper and lower electrodes or a light absorbing layer) to form a groove of the thin film solar cell substrate, and simultaneously The groove machining is performed by moving relative to the Y direction along the predetermined line.
藉由使用前端部分尖細之圓錐梯形之槽加工工具，能較穩定地進行槽加工。另一方面，薄膜會不規則地大幅剝離，無須除去之部分亦被除去，會有太陽電池之性能及產率降低之問題點。By using a tapered conical trapezoidal groove processing tool at the front end portion, the groove processing can be performed more stably. On the other hand, the film is peeled off irregularly, and the portion that does not need to be removed is also removed, which may cause problems in the performance and yield of the solar cell.
因此，本發明之目的在於提供一種在對薄膜太陽電池基板之光吸收層或電極膜等之各種功能層加工槽時，產率佳且可抑制光電轉換效率等之產品性能降低地加工之薄膜太陽電池之槽加工工具及使用此槽加工工具之槽加工方法以及槽加工裝置。In view of the above, it is an object of the present invention to provide a film sun which is excellent in productivity and can suppress the deterioration of product properties such as photoelectric conversion efficiency when processing grooves of various functional layers such as a light absorbing layer or an electrode film of a thin film solar cell substrate. A cell processing tool for a battery, a groove processing method using the groove processing tool, and a groove processing device.
為了解決上述課題，本發明之薄膜太陽電池用之槽加工工具，由棒狀之本體與形成在本體前端之圓錐梯狀之刃尖區域構成；刃尖區域具有底面與從底面朝向本體延伸之側面；藉由底面與側面形成之角部構成刃尖；從底面朝向本體變細地形成。In order to solve the above problems, the groove processing tool for a thin film solar cell of the present invention comprises a rod-shaped body and a conical stepped blade tip region formed at a front end of the body; the blade tip region has a bottom surface and a side extending from the bottom surface toward the body The corner formed by the bottom surface and the side surface constitutes a blade edge; the bottom surface is formed to be thinner toward the body.
又，為了解決上述課題，本發明之薄膜太陽電池之槽加工方法，係沿著薄膜太陽電池基板之刻劃預定線，以槽加工工具之刃尖按壓並同時使太陽電池基板與槽加工工具相對移動，在太陽電池基板之薄膜形成刻劃線，其特徵在於：使用本發明之槽加工工具，將槽加工工具之底面按壓於薄膜太陽電池基板之表面以進行槽加工。Further, in order to solve the above problems, the groove processing method of the thin film solar cell of the present invention is performed by cutting a predetermined line along the thin film solar cell substrate, pressing the blade tip of the groove processing tool, and simultaneously making the solar cell substrate and the groove processing tool Moving, a thin line is formed on the film of the solar cell substrate, and the bottom surface of the groove processing tool is pressed against the surface of the thin film solar cell substrate to perform groove processing using the groove processing tool of the present invention.
再者，為了解決上述課題，本發明之薄膜太陽電池之槽加工裝置，具備本發明之槽加工工具、用以載置太陽電池基板之平台、及在將槽加工工具之底面按壓於該薄膜太陽電池基板之表面之狀態下進行刻劃之刻劃頭。Further, in order to solve the above problems, the groove processing apparatus for a thin film solar cell of the present invention includes the groove processing tool of the present invention, a stage on which the solar cell substrate is placed, and the bottom surface of the groove processing tool is pressed against the thin film sun. The scratching is performed in the state of the surface of the battery substrate.
根據本發明之槽加工工具，由於刃尖區域從按壓於薄膜太陽電池基板之底面朝向本體變細地形成，因此從基板除去後之薄膜順暢地往 本體側排出，不會受到除去後之薄膜之影響，可形成膜剝離較少之刻劃線。According to the groove processing tool of the present invention, since the blade edge region is formed to be thinned from the bottom surface of the thin film solar cell substrate toward the body, the film removed from the substrate smoothly flows toward The main body side is discharged, and is not affected by the film after the removal, and a scribe line having a small peeling of the film can be formed.
(用以解決其他課題之手段及效果)(means and effects to solve other problems)
槽加工工具，較佳為，底面之寬度為30μm以上、100μm以下。In the groove processing tool, the width of the bottom surface is preferably 30 μm or more and 100 μm or less.
槽加工工具，較佳為，藉由底面與前後面形成之刃尖之角度為65°以上、85°以下。Preferably, the groove processing tool has an angle of 65° or more and 85° or less by the edge formed by the bottom surface and the front and back surfaces.
槽加工工具，較佳為，以超硬合金、或金剛石形成。The groove processing tool is preferably formed of a superhard alloy or diamond.
藉此，工具之壽命變長，變形亦少，因此能長期間高精度地進行刻劃加工。As a result, the life of the tool is long and the deformation is small, so that the scribing process can be performed with high precision for a long period of time.
W‧‧‧太陽電池基板W‧‧‧Solar battery substrate
7‧‧‧刻劃頭7‧‧‧Scratch
8‧‧‧槽加工工具8‧‧‧Slot processing tools
81‧‧‧本體81‧‧‧Ontology
82‧‧‧刃尖區域82‧‧‧Edge area
83‧‧‧刃尖區域之底面83‧‧‧Bottom of the blade tip area
84‧‧‧刃尖區域之側面84‧‧‧Side side of the blade tip area
85‧‧‧刃尖85‧‧‧ cutting edge
圖1係顯示本發明之積體型薄膜太陽電池之槽加工裝置之一實施形態之立體圖。Fig. 1 is a perspective view showing an embodiment of a groove processing device for an integrated type thin film solar cell of the present invention.
圖2係本發明之槽加工工具之立體圖。Figure 2 is a perspective view of the slot processing tool of the present invention.
圖3係上述槽加工工具之底面放大圖。Figure 3 is an enlarged view of the bottom surface of the above-described groove processing tool.
圖4係本發明之槽加工工具之刃尖區域之放大圖。Figure 4 is an enlarged view of the blade tip region of the slot processing tool of the present invention.
圖5係顯示習知加工工具之加工狀態之例之圖。Fig. 5 is a view showing an example of a processing state of a conventional processing tool.
圖6係顯示本發明之槽加工工具之加工狀態之例之圖。Fig. 6 is a view showing an example of the processing state of the groove processing tool of the present invention.
圖7(a)~(c)係顯示一般CIGS系之薄膜太陽電池之製程之示意圖。7(a) to (c) are schematic views showing the process of a general CIGS-based thin film solar cell.
圖8係顯示習知槽加工工具之一例之立體圖。Fig. 8 is a perspective view showing an example of a conventional groove processing tool.
以下，根據顯示實施形態之圖式詳細說明本發明之詳細。圖1係顯示本發明之使用槽加工工具之積體型薄膜太陽電池用刻劃裝 置之實施形態之立體圖。刻劃裝置具備可往水平方向(Y方向)移動且在水平面內可90度及角度θ旋轉之平台18，平台18實質上形成太陽電池基板W之保持手段。Hereinafter, the details of the present invention will be described in detail based on the drawings showing the embodiments. 1 is a stencil for an integrated type solar cell using a groove processing tool of the present invention. A perspective view of the embodiment. The scribing device has a platform 18 that is movable in the horizontal direction (Y direction) and is rotatable at 90 degrees and an angle θ in a horizontal plane. The platform 18 substantially forms a holding means for the solar cell substrate W.
以隔著平台18設置之兩側之支承柱20,20與往X方向延伸之導桿21構成之橋部19係設成橫跨平台18上。保持具支承體23係安裝成可沿著形成在導桿21之導件22移動，藉由馬達24之旋轉往X方向移動。The bridge portion 19 formed by the support columns 20, 20 disposed on both sides of the platform 18 and the guide rods 21 extending in the X direction is disposed across the platform 18. The holder support 23 is attached so as to be movable along the guide 22 formed on the guide rod 21, and is moved in the X direction by the rotation of the motor 24.
在保持具支承體23設有刻劃頭7，在刻劃頭7之下部設有保持具9，該保持具9保持對載置於平台18上之太陽電池基板W之薄膜表面進行刻劃加工之槽加工工具8。The holder support 23 is provided with a scribing head 7, and a holder 9 is provided at a lower portion of the scribing head 7, and the holder 9 keeps scribing the surface of the film of the solar cell substrate W placed on the stage 18. Slot processing tool 8.
又，在能往X方向及Y方向移動之台座12,13分別設有攝影機10,11。台座12,13在支承台13上沿著往X方向延伸之導件15移動。攝影機10,11能以手動操作而上下動，可調整攝影之焦點。以攝影機10,11拍攝之影像顯示在顯示器16,17。Further, cameras 10 and 11 are provided in the pedestals 12, 13 which are movable in the X direction and the Y direction, respectively. The pedestals 12, 13 move on the support table 13 along the guides 15 extending in the X direction. The cameras 10, 11 can be moved up and down by manual operation to adjust the focus of photography. Images taken with the cameras 10, 11 are displayed on the displays 16, 17.
在載置在平台18上之太陽電池基板W之表面設有用以特定位置之對準標記，藉由攝影機10,11拍攝對準標記，藉此調整太陽電池基板W之位置。具體而言，藉由攝影機10,11拍攝平台18所支承之太陽電池基板W之表面之對準標記，特定對準標記之位置。根據特定出之對準標記之位置檢測太陽電池基板W之表面載置時之方向偏移，藉由使平台18旋轉既定角度以修正偏移。An alignment mark for a specific position is provided on the surface of the solar cell substrate W placed on the stage 18, and the alignment marks are photographed by the cameras 10, 11, thereby adjusting the position of the solar cell substrate W. Specifically, the cameras 10, 11 capture the alignment marks of the surface of the solar cell substrate W supported by the platform 18, and the positions of the alignment marks are specified. The direction shift at the time of surface mounting of the solar cell substrate W is detected based on the position of the specific alignment mark, and the offset is corrected by rotating the stage 18 by a predetermined angle.
接著，每當平台18往Y方向移動既定間距時，使刻劃頭7下降，在槽加工工具8之刃尖按壓於太陽電池基板W之表面之狀態下，往X方向移動，沿著X方向對太陽電池基板W之表面進行刻劃加工。沿著Y 方向對太陽電池基板W之表面進行刻劃加工之情形，使平台18旋轉90度，進行與上述相同之動作。Then, each time the stage 18 is moved to the predetermined distance in the Y direction, the scribe head 7 is lowered, and in the state where the blade edge of the groove processing tool 8 is pressed against the surface of the solar cell substrate W, it moves in the X direction along the X direction. The surface of the solar cell substrate W is scribed. Along Y When the direction of the surface of the solar cell substrate W is scribed, the stage 18 is rotated by 90 degrees, and the same operation as described above is performed.
圖2、圖3及圖4係顯示在本發明使用之槽加工工具8之示意圖。圖2係從下方觀察之立體圖，圖3係從底面側觀察槽加工工具8之底面之放大圖，圖4係從側面側觀察槽加工工具8之刃尖區域之放大圖。此槽加工工具8實質上由作為對刻劃頭7之安裝部之圓柱狀本體81與在其前端部一體地形成之刃尖區域82構成，以超硬合金或金剛石等之硬質材料製造。刃尖區域82由圓形之底面83與從底面83之外緣朝向本體81上升之側面84構成。藉由底面83與側面84形成之角部成為刃尖85。2, 3 and 4 are schematic views showing the groove processing tool 8 used in the present invention. 2 is a perspective view from below, and FIG. 3 is an enlarged view of the bottom surface of the groove processing tool 8 as viewed from the bottom surface side, and FIG. 4 is an enlarged view of the blade edge region of the groove processing tool 8 as viewed from the side surface side. The groove processing tool 8 is basically composed of a cylindrical body 81 as a mounting portion for the scribing head 7 and a blade edge region 82 integrally formed at the tip end portion thereof, and is made of a hard material such as cemented carbide or diamond. The blade edge region 82 is composed of a circular bottom surface 83 and a side surface 84 that rises from the outer edge of the bottom surface 83 toward the body 81. The corner formed by the bottom surface 83 and the side surface 84 serves as the blade edge 85.
底面83之寬度W較佳為50~80μm，但配合要求之刻劃之槽寬可為30~100μm。又，刃尖區域82之有效高度、亦即刃尖區域之側面84之高度H較佳為10μm~230μm程度。又，底面83與側面84所形成之角部之角度較佳為65°~85°。再者，圓柱狀本體81之直徑為2~4mm程度即可。此外，槽加工工具8之本體81並不限於圓柱狀，以剖面四角形或多角形形成亦可。The width W of the bottom surface 83 is preferably 50 to 80 μm, but the groove width of the scribed surface may be 30 to 100 μm. Further, the effective height of the blade edge region 82, that is, the height H of the side surface 84 of the blade edge region is preferably about 10 μm to 230 μm. Further, the angle of the corner formed by the bottom surface 83 and the side surface 84 is preferably 65 to 85. Further, the diameter of the cylindrical body 81 may be about 2 to 4 mm. Further, the body 81 of the groove processing tool 8 is not limited to a cylindrical shape, and may be formed in a quadrangular shape or a polygonal shape.
使用上述槽加工工具8進行加工之情形，在刃尖區域82之底面83沿著工具之移動方向之狀態且相對於太陽電池基板W之表面平行之狀態下，安裝於刻劃頭7。The processing by the above-described groove processing tool 8 is attached to the scribing head 7 in a state where the bottom surface 83 of the blade edge region 82 is in the moving direction of the tool and parallel to the surface of the solar cell substrate W.
根據本發明，刃尖區域82從按壓於薄膜太陽電池基板W之底面83朝向本體81變細地形成，因此從基板除去後之薄膜順暢地往本體側排出，不會受到除去後之薄膜之影響，可形成膜剝離較少之刻劃線。According to the invention, the blade edge region 82 is formed to be thinner from the bottom surface 83 pressed against the thin film solar cell substrate W toward the body 81, so that the film removed from the substrate is smoothly discharged toward the body side without being affected by the removed film. It can form a score line with less peeling of the film.
圖5係比較以往之加工工具所形成之刻劃線與本發明之槽 加工工具所形成之刻劃線之影像資料。圖5(a)係顯示使用習知槽加工工具形成之刻劃線，圖5(b)係顯示使用本發明之槽加工工具形成之刻劃線。在使用本發明之槽加工工具形成刻劃線之情形，與習知例相較，明顯地可形成一定寬度且漂亮之刻劃線。Figure 5 is a comparison of the scribe line formed by the conventional processing tool and the groove of the present invention. The image data of the scribe line formed by the processing tool. Fig. 5(a) shows a scribe line formed using a conventional groove processing tool, and Fig. 5(b) shows a scribe line formed using the groove processing tool of the present invention. In the case where the scribe line is formed using the groove processing tool of the present invention, it is apparent that a certain width and a beautiful scribe line can be formed as compared with the conventional example.
此外，上述實施例中，藉由使刻劃頭7往X方向移動以執行刻劃加工，但只要刻劃頭7與太陽電池基板W能相對移動即可，因此在太陽電池基板W固定之狀態下使刻劃頭7往X方向或Y方向移動亦可，不使刻劃頭7移動而僅使太陽電池基板W往X方向或Y方向移動亦可。Further, in the above embodiment, the scribing head 7 is moved in the X direction to perform the scribing process, but as long as the scribing head 7 and the solar cell substrate W can relatively move, the solar cell substrate W is fixed. The scribe head 7 may be moved in the X direction or the Y direction, and the solar cell substrate W may be moved only in the X direction or the Y direction without moving the scribe head 7.
以上，說明本發明之代表實施例，但本發明並不僅限於上述實施例之構造。為了達成其目的，在不脫離申請專利範圍之情況下可適當地進行修正、變更。The representative embodiments of the present invention have been described above, but the present invention is not limited to the configurations of the above embodiments. In order to achieve the objective, modifications and changes may be made as appropriate without departing from the scope of the patent application.
本發明可適用於薄膜太陽電池之製造所使用之槽加工工具、槽加工方法及槽加工裝置。The present invention is applicable to a groove processing tool, a groove processing method, and a groove processing device used in the manufacture of a thin film solar cell.
8‧‧‧槽加工工具8‧‧‧Slot processing tools
81‧‧‧本體81‧‧‧Ontology
82‧‧‧刃尖區域82‧‧‧Edge area
83‧‧‧刃尖區域之底面83‧‧‧Bottom of the blade tip area
84‧‧‧刃尖區域之側面84‧‧‧Side side of the blade tip area
85‧‧‧刃尖85‧‧‧ cutting edge
Claims (6)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2012081865A JP5804999B2 (en) | 2012-03-30 | 2012-03-30 | Groove machining tool, groove machining method and groove machining apparatus for thin-film solar cell using the same |
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| TW201339114A TW201339114A (en) | 2013-10-01 |
| TWI498295B true TWI498295B (en) | 2015-09-01 |
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| JP (1) | JP5804999B2 (en) |
| KR (1) | KR101512705B1 (en) |
| CN (1) | CN103367535B (en) |
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| CN104952971B (en) * | 2014-03-28 | 2017-09-19 | 三星钻石工业股份有限公司 | Groove processing instrument and the scoring device for being provided with the groove processing instrument |
| JP6406006B2 (en) * | 2014-03-28 | 2018-10-17 | 三星ダイヤモンド工業株式会社 | Grooving tool and scribing device equipped with the groove machining tool |
| JP6332618B2 (en) * | 2014-04-24 | 2018-05-30 | 三星ダイヤモンド工業株式会社 | Scribing cutter wheel and scribing device |
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| JP2000315809A (en) * | 1999-03-04 | 2000-11-14 | Matsushita Electric Ind Co Ltd | Fabrication of integrated thin film solar cell and patterning system |
| JP2002033498A (en) * | 2000-07-17 | 2002-01-31 | Matsushita Electric Ind Co Ltd | Manufacturing method for integrated thin-film solar cell and patterning apparatus |
| US7553390B2 (en) * | 2001-11-08 | 2009-06-30 | Sharp Kabushiki Kaisha | Method and device for parting glass substrate, liquid crystal panel, and liquid crystal panel manufacturing device |
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| JP2013211465A (en) | 2013-10-10 |
| CN103367535B (en) | 2016-05-25 |
| KR20130111328A (en) | 2013-10-10 |
| KR101512705B1 (en) | 2015-04-16 |
| TW201339114A (en) | 2013-10-01 |
| JP5804999B2 (en) | 2015-11-04 |
| CN103367535A (en) | 2013-10-23 |
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