TWI426964B - Organic EL display cleaning device, organic EL display manufacturing device, organic EL display and organic EL mask cleaning method - Google Patents

Organic EL display cleaning device, organic EL display manufacturing device, organic EL display and organic EL mask cleaning method Download PDF

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TWI426964B
TWI426964B TW098130217A TW98130217A TWI426964B TW I426964 B TWI426964 B TW I426964B TW 098130217 A TW098130217 A TW 098130217A TW 98130217 A TW98130217 A TW 98130217A TW I426964 B TWI426964 B TW I426964B
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organic
mask
laser
vapor deposition
cleaning
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TW201021928A (en
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Ryo Izaki
Fumio Kataoka
Kenji Katagiri
Nobuhiro Nirasawa
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Hitachi High Tech Corp
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Priority claimed from JP2008262791A external-priority patent/JP2010092761A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00Cleaning by methods involving the use of air flow or gas flow
    • B08B5/04Cleaning by suction, with or without auxiliary action
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Description

有機EL用遮罩潔淨裝置、有機EL顯示器之製造裝置、有機EL顯示器及有機EL用遮罩潔淨方法Mask cleaning device for organic EL, manufacturing device for organic EL display, organic EL display, and mask cleaning method for organic EL

本發明係關於:藉由雷射之照射來進行有機EL用遮罩的潔淨之有機EL用遮罩潔淨裝置、有機EL(Electro Luminescence:電激發光)顯示器之製造裝置、有機EL顯示器及有機EL用遮罩潔淨方法。The present invention relates to a clean mask for a clean organic EL, a device for manufacturing an organic EL (Electro Luminescence) display, an organic EL display, and an organic EL for performing an organic EL mask by laser irradiation. Use a mask to clean the method.

有機EL(Electro Luminescence:電激發光)顯示器,係屬不需要背光之低耗電、輕薄型的畫像顯示裝置,被廣泛地使用。其構造上,係於透明性的玻璃基板上層積有機EL薄膜層,有機EL薄膜層則採用藉由陽極層與陰極層來夾住發光層之構造。發光層則以在玻璃基板上蒸鍍有機材料形成為薄膜者被廣為使用,且將構成顯示器之各畫素區域予以分割為3來蒸鍍RGB(紅色、綠色、藍色)之3色的有機材料。因此,為了於各畫素之3個區域蒸鍍不同顏色的有機材料(有機色素材料),使用形成有多數的開口部之有機EL用遮罩(shadow mask:影像遮罩)來進行蒸鍍。一面將此有機EL用遮罩各畫素份地予以錯開,一面藉由蒸鍍各色之蒸鍍物質,來完成發光層之蒸鍍製程。An organic EL (Electro Luminescence) display is a low-power, thin and light image display device that does not require a backlight, and is widely used. In the structure, an organic EL thin film layer is laminated on a transparent glass substrate, and the organic EL thin film layer has a structure in which a light emitting layer is sandwiched between an anode layer and a cathode layer. The light-emitting layer is widely used by depositing an organic material on a glass substrate to form a thin film, and the respective pixel regions constituting the display are divided into three to vapor-deposit three colors of RGB (red, green, blue). organic material. Therefore, in order to deposit an organic material (organic pigment material) of a different color in three regions of each pixel, vapor deposition is performed using an organic EL mask (image mask) in which a large number of openings are formed. The organic EL is patterned by disposing each of the masks, and the vapor deposition process of the light-emitting layer is completed by vapor-depositing the vapor-deposited materials of the respective colors.

於進行蒸鍍製程時,有機材料不單附著於玻璃基板,也附著於有機EL用遮罩。有機EL用遮罩並非只被使用於1個蒸鍍製程,而係被重複使用,於進行下一蒸鍍製程時,如有機EL用遮罩附著有蒸鍍物質,會有蒸鍍物質附著於新的玻璃基板之虞。另外,有機材料也蒸鍍於多數形成於有機EL用遮罩的開口部之邊緣部分,使得開口部的面積部分地或全面地被堵塞。不用說是開口部的全部被堵塞的情形,單單即使是部分地被堵塞時,開口面積產生變化,使用該有機EL用遮罩之情形的蒸鍍精度會顯著地降低,而且變成無法使用。因此,定期地(以完成1個之蒸鍍製程後)潔淨有機EL用遮罩來進行蒸鍍物質的去除。When the vapor deposition process is performed, the organic material adheres not only to the glass substrate but also to the organic EL mask. The organic EL mask is not used only in one vapor deposition process, but is reused. When the next vapor deposition process is performed, if a vapor deposition material adheres to the organic EL mask, the vapor deposition material adheres to the vapor deposition material. The top of the new glass substrate. Further, the organic material is also vapor-deposited on the edge portion of the opening portion formed in the organic EL mask, so that the area of the opening portion is partially or completely blocked. Needless to say, when the entire opening portion is clogged, the opening area changes even when it is partially blocked, and the vapor deposition accuracy in the case of using the organic EL mask is remarkably lowered, and it becomes unusable. Therefore, the vapor deposition material is removed by periodically cleaning the organic EL mask after completing one vapor deposition process.

作為有機EL用遮罩的潔淨,主要進行使用界面活性劑等之濕式潔淨。濕式潔淨係對於有機EL用遮罩供給液體來進行之潔淨。但是,所被潔淨的有機EL用遮罩,係屬微米級(數十微米程度)的極薄金屬板,於濕式潔淨時,基於液體壓力作用,對有機EL用遮罩產生扭曲或變形等之大的損傷。另外,使用界面活性劑等之藥液來進行濕式潔淨時,需要藥液供給機構以及處理使用完畢的藥液(排液)之排液處理機構,使得機構複雜化,而且也有排液所產生的環境污染問題。As the cleaning of the organic EL mask, wet cleaning using a surfactant or the like is mainly performed. The wet cleaning system cleans the liquid supplied to the organic EL mask. However, the mask for the organic EL to be cleaned is an ultra-thin metal plate of a micron order (several tens of micrometers), and when wet and clean, the organic EL mask is distorted or deformed based on the liquid pressure. The big damage. In addition, when wet cleaning is performed using a chemical solution such as a surfactant, a chemical supply mechanism and a liquid discharge processing mechanism for processing the used chemical liquid (discharge) are required, and the mechanism is complicated, and liquid discharge is also generated. Environmental pollution problems.

另一方面,作為不使用濕式潔淨之藥液的潔淨,於專利文獻1揭露有對有機EL用遮罩照射雷射來進行潔淨(雷射潔淨)之技術。藉由將雷射照射於金屬素材的有機EL用遮罩,使有機EL用遮罩與有機材料之間產生剝離力。專利文獻1之技術,係藉由此剝離力從有機EL用遮罩去除有機材料來進行潔淨者。On the other hand, in the case of cleaning without using a wet clean liquid, Patent Document 1 discloses a technique of irradiating a laser for a mask for organic EL to perform clean (laser clean). A mask for the organic EL is irradiated with a laser to cause a peeling force between the organic EL mask and the organic material. According to the technique of Patent Document 1, the organic material is removed from the organic EL mask by the peeling force to perform cleaning.

[先前技術文獻][Previous Technical Literature]

[專利文獻1]日本專利特開2006-169573號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-169573

於專利文獻1之技術中,雖然對有機EL用遮罩照射雷射,將附著的有機材料予以剝離,但為了防止進行潔淨之槽內或大氣的污染,使剝離後的有機材料不要從有機EL用遮罩分開。因此,為了去除剝離後之有機材料,使用黏著性的薄膜。此薄膜,為了轉印已剝離之有機材料,使其具有黏著力,於將薄膜黏貼於有機EL用遮罩的狀態下,照射雷射,使已剝離的蒸鍍物質轉印於薄膜。然後,藉由使轉印有有機材料的薄膜從有機EL用遮罩剝離,完成潔淨製程。In the technique of Patent Document 1, although the organic EL mask is irradiated with a laser and the adhered organic material is peeled off, in order to prevent contamination in the clean tank or the atmosphere, the organic material after peeling is not required from the organic EL. Separate with a mask. Therefore, in order to remove the organic material after peeling, an adhesive film is used. In order to transfer the peeled organic material to the adhesive, the film is irradiated with a laser and the peeled vapor deposition material is transferred to the film while the film is adhered to the organic EL mask. Then, the cleaning process is completed by peeling off the film on which the organic material is transferred from the mask for the organic EL.

如前述般,有機EL用遮罩是極薄的金屬板,即使是極微微小的力量作用,也會產生扭曲或變形等而造成損傷。並且伴隨近年來的有機EL顯示器的大畫面化,有機EL用遮罩的尺寸也變得大型,大型且極薄的有機EL用遮罩的處理上,需要極微細緻。於專利文獻1之技術中,由有機EL用遮罩之薄膜的剝離,係以抵抗黏著力而予以剝開之方式進行,過多的力量作用於有機EL用遮罩。其結果為,對有機EL用遮罩給予了甚大的損傷。As described above, the mask for organic EL is an extremely thin metal plate, and even if it is a very small force, it may be damaged by deformation or deformation. In addition, with the large screen of the organic EL display in recent years, the size of the mask for the organic EL is also large, and the processing of the large and extremely thin mask for the organic EL needs to be extremely fine. In the technique of Patent Document 1, the peeling of the film of the mask for organic EL is performed so as to be peeled off against the adhesive force, and excessive force acts on the mask for the organic EL. As a result, the organic EL mask was given a great damage.

即在專利文獻1中,雖是藉由雷射,從有機EL用遮罩來將有機材料剝離,但為了去除已剝離的有機材料,使薄膜接觸有機EL用遮罩,結果成為並非以非接觸方式來完成潔淨。另外,作為薄膜,雖然使用雷射可以透過的素材(聚乙烯對苯二甲酯),但即使是使用透過性之薄膜,還是會使雷射產生衰減。因此,無法對於有機EL用遮罩給予充分的能量,有無法發揮高潔淨效果之虞。而且,需要進行薄膜之黏貼及剝離用的專用之機構,存在機構複雜化,且裝置大型化的問題。特別是,如有機EL用遮罩變得大尺寸,薄膜的尺寸也變大,機構的複雜化、裝置的大型化之問題變得更為顯著。In the case of Patent Document 1, the organic material is peeled off from the organic EL mask by laser irradiation. However, in order to remove the peeled organic material, the film is brought into contact with the organic EL mask, and as a result, it is not non-contact. Way to complete the cleansing. Further, as a film, a material that can be transmitted through a laser (polyethylene terephthalate) is used, but even if a transparent film is used, the laser is attenuated. Therefore, it is not possible to give sufficient energy to the mask for organic EL, and it is impossible to exhibit a high cleansing effect. Further, there is a need for a dedicated mechanism for adhering and peeling a film, which has a problem that the mechanism is complicated and the device is enlarged. In particular, when the mask for organic EL is large in size, the size of the film is also increased, and the problem of complication of the mechanism and enlargement of the device becomes more remarkable.

因此,本發明之目的在於:於進行將附著於有機EL用遮罩的蒸鍍物予以去除之潔淨時,對於基板以完全非接觸狀態之方式來去除蒸鍍物。Therefore, an object of the present invention is to remove the vapor-deposited material in a completely non-contact state when the vapor-deposited material adhering to the organic EL mask is removed.

為了解決以上的課題,本發明之申請專利範圍第1項之有機EL用遮罩潔淨裝置,為用以去除附著於有機EL用遮罩的蒸鍍物質之有機EL用遮罩潔淨裝置,其特徵為具備有:使對前述有機EL用遮罩的表面照射雷射光,將前述蒸鍍物質予以粉碎所產生的游離產生物朝上方飛散之雷射手段;及形成於由前述有機EL用遮罩的表面分開的位置之去除前述游離產生物的去除手段。In order to solve the above problems, the mask cleaning apparatus for an organic EL according to the first aspect of the present invention is a mask cleaning apparatus for organic EL for removing a vapor deposition material adhering to a mask for an organic EL. A laser device that irradiates the surface of the organic EL mask with laser light, scatters the vapor-deposited material to cause a free product to scatter upward, and is formed by the organic EL mask. The means for removing the aforementioned free product is removed from the position where the surface is separated.

如依據此有機EL用遮罩潔淨裝置,係將附著於有機EL用遮罩之蒸鍍物質予以粉碎成為游離產生物,使其朝上方飛散,且藉由設置於由有機EL用遮罩的表面分開之位置的去除手段來去除游離產生物,對於有機EL用遮罩,可以不使接觸固體或液體等來進行潔淨。According to the mask cleaning apparatus for the organic EL, the vapor deposition material adhering to the mask for the organic EL is pulverized into a free product, which is scattered upward, and is provided on the surface of the mask for the organic EL. The removal means at a separate position is used to remove the free product, and the mask for the organic EL can be cleaned without contacting a solid or a liquid.

本發明之申請專利範圍第2項之有機EL用遮罩潔淨裝置,係於申請專利範圍第1項所記載之有機EL用遮罩潔淨裝置中,其中前述去除手段,係形成搬運已飛散的前述游離產生物而予以去除的氣流之氣流形成手段。A mask cleaning apparatus for an organic EL according to the invention of claim 2, wherein the removal means is formed by the aforementioned removal means. A gas flow forming means for removing the gas stream which is removed by the product.

如依據此有機EL用遮罩潔淨裝置,可以藉由形成於由有機EL用遮罩表面分開之位置的氣流來去除已飛散之游離產生物。According to the mask cleaning apparatus for organic EL, the scattered free product can be removed by the air current formed at a position separated by the surface of the organic EL mask.

本發明之申請專利範圍第3項之有機EL用遮罩潔淨裝置,係於申請專利範圍第2項所記載之有機EL用遮罩潔淨裝置,其中前述氣流,係形成於從前述有機EL用遮罩的表面分開的位置之層流狀態的氣流,且具有沿著前述EL用遮罩的表面之流動。A mask cleaning apparatus for an organic EL according to the invention of claim 2, wherein the airflow is formed from the organic EL mask. The flow of the laminar flow at a position where the surface of the cover is separated, and has a flow along the surface of the aforementioned EL mask.

如依據此有機EL用遮罩潔淨裝置,氣流成為從有機EL用遮罩的表面分開之層流狀態的氣流,且成為沿著有機EL用遮罩的表面之流動。藉由於有機EL用遮罩的上方形成層流狀態的氣流,已飛散之游離產生物藉由氣流被搬運,且於從有機EL用遮罩的表面分開之位置形成氣流,在有機EL用遮罩的正上方之區域不會產生亂流。藉此,不會再度回到有機EL用遮罩,游離產生物不會再度附著於有機EL用遮罩,可以獲得極高的洗淨效果。According to the mask cleaning apparatus for organic EL, the airflow becomes a laminar flow state separated from the surface of the organic EL mask, and flows along the surface of the organic EL mask. By forming a gas stream in a laminar flow state above the mask for the organic EL, the scattered free product is transported by the airflow, and the airflow is formed at a position separated from the surface of the organic EL mask, and the mask for the organic EL is used. The area directly above does not cause turbulence. As a result, the mask for the organic EL is not returned again, and the free product does not adhere to the mask for the organic EL again, and an extremely high cleaning effect can be obtained.

本發明之申請專利範圍第4項之有機EL用遮罩潔淨裝置,係於申請專利範圍第2或3項所記載之有機EL用遮罩潔淨裝置中,其中具備有:使前述雷射掃瞄前述有機EL用遮罩的表面之雷射掃瞄手段。The mask cleaning apparatus for an organic EL according to the invention of claim 4, wherein the mask cleaning apparatus for organic EL according to claim 2 or 3, wherein the laser scanning apparatus is provided The laser scanning means for the surface of the mask for organic EL.

如依據此有機EL用遮罩潔淨裝置,藉由使雷射掃瞄,可以潔淨有機EL用遮罩的特定區域。雷射的掃瞄範圍,可以是有機EL用遮罩的全面,也可以是限定於一部份區域。According to this mask cleaning apparatus for organic EL, by scanning the laser, it is possible to clean a specific region of the mask for the organic EL. The scanning range of the laser may be comprehensive to the mask of the organic EL, or may be limited to a part of the area.

本發明之申請專利範圍第5項之有機EL用遮罩潔淨裝置,係如申請專利範圍第2或3項所記載之有機EL用遮罩潔淨裝置,其中具備有:使前述有機EL用遮罩與前述雷射手段相對地移動用之相對移動手段。A mask cleaning apparatus for an organic EL according to the invention of claim 5, wherein the mask for cleaning the organic EL is provided in the mask for cleaning the organic EL according to the second aspect of the invention. A relative moving means for moving relative to the aforementioned laser means.

如依據此有機EL用遮罩潔淨裝置,藉由使有機EL用遮罩與雷射手段相對地移動,可以潔淨有機EL用遮罩的特定區域。相對移動手段,如可以使有機EL用遮罩與雷射手段相對地移動即可,也可以使有機EL用遮罩與雷射手段的其中一方或兩方移動。According to the mask cleaning apparatus for organic EL, by moving the organic EL mask and the laser means relatively, it is possible to clean a specific region of the organic EL mask. The relative movement means may be such that the organic EL mask and the laser means can be relatively moved, and one or both of the organic EL mask and the laser means can be moved.

本發明之申請專利範圍第6項之有機EL用遮罩潔淨裝置,係如申請專利範圍第4項或5項所記載之有機EL用遮罩潔淨裝置,其中,為了對前述有機EL用遮罩的不同區域分別照射雷射,具備有複數個前述雷射手段。A mask cleaning apparatus for an organic EL according to claim 4, wherein the mask for cleaning the organic EL according to the fourth or fifth aspect of the invention is used in the mask for the organic EL. The different regions are respectively irradiated with lasers, and there are a plurality of the aforementioned laser means.

如依據此有機EL用遮罩潔淨裝置,可以藉由複數個雷射手段來分割區域以進行有機EL用遮罩的洗淨,能夠高速地進行潔淨。According to the mask cleaning apparatus for organic EL, the organic EL mask can be cleaned by dividing the area by a plurality of laser means, and cleaning can be performed at high speed.

本發明之申請專利範圍第7項之有機EL用遮罩潔淨裝置,係如申請專利範圍第3項所記載之有機EL用遮罩潔淨裝置,其中前述氣流形成手段,係具備:於從前述有機EL用遮罩只分開為了形成層流狀態的前述氣流所必要的間隔之位置所設置的吸引手段。The mask cleaning apparatus for an organic EL according to the invention of claim 3, wherein the airflow forming means is provided from the organic The EL mask separates only the attraction means provided at the position of the interval necessary for forming the aforementioned air current in the laminar flow state.

如依據此有機EL用遮罩潔淨裝置,吸引手段係於從有機EL用遮罩分開之位置,且沿著有機EL用遮罩的表面來進行吸引,成為可以在從有機EL用遮罩的表面分開之位置形成層流狀態的氣流。According to the mask cleaning apparatus for the organic EL, the suction means is attached to the surface of the mask for the organic EL, and is attracted to the surface of the mask for the organic EL, so that the surface can be removed from the surface of the mask for the organic EL. The separated position forms a flow in a laminar flow state.

本發明之申請專利範圍第8項之有機EL用遮罩潔淨裝置,係如申請專利範圍第7項所記載之有機EL用遮罩潔淨裝置,其中前述氣流形成手段,係具備:朝向前述吸引手段送風之送風手段。A mask cleaning apparatus for an organic EL according to claim 7 of the invention, wherein the airflow forming means includes: toward the suction means The means of sending air to the wind.

如依據此有機EL用遮罩潔淨裝置,藉由將吸引手段與送風手段予以組合,可以行程穩定的層流狀態之氣流。According to the mask cleaning apparatus for organic EL, by combining the suction means and the air blowing means, it is possible to travel the flow in a stable laminar flow state.

本發明之申請專利範圍第9項之有機EL用遮罩潔淨裝置,係如申請專利範圍第1項所記載之有機EL用遮罩潔淨裝置,其中具備有:對於多數形成於前述有機EL用遮罩的開口部,從背面朝向表面形成上升氣流的上升氣流形成手段。A mask cleaning apparatus for an organic EL according to claim 9 of the present invention, which is characterized in that: The opening portion of the cover forms an ascending airflow forming means for forming an ascending airflow from the back surface toward the surface.

如依據此有機EL用遮罩潔淨裝置,從有機EL用遮罩的開口部之背面朝向表面形成上升氣流,即使是游離產生物朝向開口部落下,也藉由上升氣流被推回,不會捲入背面而附著。另外,不單是雷射的能量,藉由上升氣流,游離產生物也會朝上升,可以確實地引導游離產生物至去除手段,能夠進行極高洗淨度的潔淨。According to the mask cleaning apparatus for organic EL, an upward flow is formed from the back surface of the opening of the organic EL mask toward the surface, and even if the free product is directed toward the opening, it is pushed back by the ascending airflow, and the volume is not rolled. Attached to the back. In addition, not only the energy of the laser, but also the free product is raised by the ascending air current, and the free product can be reliably guided to the removal means, and the extremely high degree of cleanliness can be cleaned.

本發明之申請專利範圍第10項之有機EL用遮罩潔淨裝置,係如申請專利範圍第1項所記載之有機EL用遮罩潔淨裝置,其中具備有:設置於前述雷射手段的後段側,將附著於前述有機EL用遮罩的表面之游離產生物予以電漿洗淨之電漿洗淨手段。The mask cleaning apparatus for an organic EL according to claim 10, wherein the mask cleaning apparatus for an organic EL according to claim 1 is provided on the rear side of the laser device. A plasma cleaning means for plasma-cleaning the free product adhering to the surface of the organic EL mask.

如依據此有機EL用遮罩潔淨裝置,將藉由雷射手段所被洗淨的有機EL用遮罩進一步予以電漿洗淨,可以獲得更高的洗淨效果。藉由雷射手段雖可以獲得99%以上的洗淨度,但也有極微微量的游離產生物再度附著於有機EL用遮罩之情形。即使在此情形下,藉由進行電漿洗淨,再附著的游離產生物大半被燃燒(灰化),所剩餘者成為燃燒氣體,此燃燒氣體藉由上升氣流而被上升,且藉由去除手段而被去除,可以從有機EL用遮罩將游離產生物確實地予以潔淨。According to the mask cleaning apparatus for organic EL, the organic EL mask which has been washed by the laser means is further plasma-cleaned, and a higher washing effect can be obtained. Although the degree of cleaning of 99% or more can be obtained by the laser method, there is also a case where a very small amount of free product reattaches to the mask for the organic EL. Even in this case, by performing plasma cleaning, most of the re-attached free products are burned (ashed), and the rest become combustion gases, which are raised by the ascending airflow, and are removed by By removing the means, the free product can be reliably cleaned from the mask for the organic EL.

本發明之申請專利範圍第11項之有機EL顯示器之製造裝置,其特徵為:使用藉由申請專利範圍第1、2、3、4、5、6、7、8、9或10項所記載之有機EL用遮罩潔淨裝置而被潔淨的有機EL用遮罩,來製造有機EL顯示器。另外,本發明之申請專利範圍第12項之有機EL顯示器,其特徵為:藉由申請專利範圍第11項所記載之有機EL顯示器的製造裝置所被製造。The apparatus for manufacturing an organic EL display according to claim 11 of the present invention is characterized in that it is used in the first, second, third, fourth, fifth, sixth, seventh, eighth, ninth or tenth aspect of the patent application. The organic EL is manufactured by using a mask for an organic EL that is cleaned by a mask cleaning device to produce an organic EL display. The organic EL display of claim 12 of the present invention is characterized in that it is manufactured by the apparatus for manufacturing an organic EL display according to claim 11.

如前述之有機EL用遮罩潔淨裝置,可以適用於有機EL顯示器之製造裝置。The mask cleaning apparatus for organic EL described above can be applied to a manufacturing apparatus of an organic EL display.

本發明之申請專利範圍第13項之有機EL用遮罩潔淨方法,為用以去除附著於有機EL用遮罩的蒸鍍物質之有機EL用遮罩潔淨方法,其特徵為:使對前述有機EL用遮罩的表面照射雷射光,將前述蒸鍍物質予以粉碎所產生的游離產生物朝上方飛散,藉由空氣之氣流將已飛散的前述游離產生物予以去除。The method for cleaning a mask for an organic EL according to the thirteenth aspect of the invention, which is a method for cleaning a mask for an organic EL for removing a vapor deposition material adhering to a mask for an organic EL, characterized in that the organic The EL irradiates the laser beam with the surface of the mask, and the free product generated by pulverizing the vapor deposition material is scattered upward, and the scattered free product is removed by the air flow.

本發明之申請專利範圍第14項之有機EL用遮罩潔淨方法,係如申請專利範圍第13項所記載之有機EL用遮罩潔淨方法,其中前述氣流,係形成於從前述有機EL用遮罩的表面分開的位置之層流狀態的氣流,且具有沿著前述EL用遮罩的表面之流動。The method of cleaning a mask for an organic EL according to claim 13 of the invention, wherein the airflow is formed from the organic EL mask. The flow of the laminar flow at a position where the surface of the cover is separated, and has a flow along the surface of the aforementioned EL mask.

本發明之申請專利範圍第15項之有機EL用遮罩潔淨方法,係如申請專利範圍第13項所記載之有機EL用遮罩潔淨方法,其中,於藉由前述氣流來去除照射前述雷射所產生的前述游離產生物時,對於多數形成於前述有機EL用遮罩的開口部,從背面朝表面形成上升氣流。The method for cleaning a mask for an organic EL according to claim 13 of the invention, wherein the illuminating the laser is removed by the airflow. In the case of the above-mentioned free product, the upstream portion is formed in the opening portion of the organic EL mask, and an ascending air current is formed from the back surface toward the surface.

本發明係藉由使用雷射手段之雷射照射,來將附著於有機EL用遮罩之蒸鍍物質予以粉碎而成為游離產生物,使其朝上方飛散,且藉由設置於從有機EL用遮罩的表面分開之位置的去除手段來去除游離產生物,能以完全非接觸方式來完成有機EL用遮罩的潔淨。因此,能夠不對有機EL用遮罩造成損傷來進行潔淨。In the present invention, the vapor deposition material adhering to the mask for the organic EL is pulverized by laser irradiation using a laser device to be a free-form material, and is scattered upward, and is provided for use in the organic EL. The removal of the surface of the mask is removed to remove the free product, and the mask for the organic EL can be cleaned in a completely non-contact manner. Therefore, it is possible to clean without causing damage to the organic EL mask.

而且,藉由氣流形成手段來形成氣流,且將氣流形成為層流狀態,從有機EL用遮罩飛散之游離產生物藉由層流狀態的氣流而被捕捉,不會再度回到有機EL用遮罩,得以防止游離產生物之再附著,可以獲得高洗淨度。另外,不需要薄膜之黏貼機構或剝離機構等,可以謀求機構的簡化、裝置的小型化。Further, the air flow is formed by the air flow forming means, and the air flow is formed into a laminar flow state, and the free product scattered from the organic EL mask is captured by the laminar air flow, and is not returned to the organic EL. The mask prevents the re-adhesion of the free product and provides high cleanliness. Further, the film sticking mechanism or the peeling mechanism is not required, and the mechanism can be simplified and the size of the device can be reduced.

進而,形成上升氣流形成手段,即使游離產生物朝向有機EL用遮罩的開口部落下,也不會附著於有機EL用遮罩的表面。此時,不單是雷射的能量,即使藉由上升氣流,游離產生物也會上升,得以大幅地使游離產生物上升,可以確實地引導至去除手段。Further, the rising gas flow forming means is formed so that the free generated product does not adhere to the surface of the organic EL mask even if it is directed toward the opening of the organic EL mask. At this time, not only the energy of the laser, but also the free product is raised by the ascending air current, and the free product can be greatly increased, and the removal means can be surely guided.

以下,參照圖面說明本發明之實施型態。第1圖及第2圖係本發明之有機EL用遮罩潔淨裝置1之概略構成圖。本發明之有機EL用遮罩潔淨裝置1,係具備:有機EL用遮罩2及基座11及搭載工作台12與夾頭部13及移動部14及雷射光源15及電流鏡16及送風部17以及吸引部18而概略地構成。有機EL用遮罩2係於構成有機EL顯示器之玻璃基板(未圖示出),將作為發光層之有機材料蒸鍍於限定的區域來形成圖案所被使用的極薄的金屬板。伴隨近年來之有機EL顯示器的大畫面化,有機EL用遮罩2的尺寸也變得非常地大型。以下所使用的有機EL用遮罩2,係設為極薄且大型尺寸者。Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 and 2 are schematic configuration diagrams of a mask cleaning device 1 for an organic EL according to the present invention. The mask cleaning apparatus 1 for an organic EL of the present invention includes an organic EL mask 2, a susceptor 11, a mounting table 12, a chuck portion 13, a moving portion 14, a laser light source 15, a current mirror 16, and a blower. The portion 17 and the suction portion 18 are roughly configured. The organic EL mask 2 is attached to a glass substrate (not shown) constituting an organic EL display, and an organic material which is a light-emitting layer is deposited on a limited region to form an extremely thin metal plate to be used for patterning. With the large screen of the organic EL display in recent years, the size of the mask 2 for organic EL has also become very large. The mask 2 for organic EL used below is an extremely thin and large size.

如第3圖及第4(a)圖所示般,於有機EL用遮罩2的外周安裝有補強框3。為了於構成有機EL顯示器之玻璃基板高精度地蒸鍍蒸鍍物質,有機EL用遮罩2的厚度係使用微米級的極薄之金屬板。藉由使有機EL用遮罩2的厚度成為極薄,即使蒸鍍於有機EL用遮罩2的有機材料具有大的角度而飛散,也不會於蒸鍍區域形成陰影,得以確保膜厚的均一性。有機EL用遮罩2是極薄且大型的金屬板,無法以單體維持平面狀,為了保持其之保形性,安裝有補強框3。另外,如可以保持有機EL用遮罩2的保形性,也可以使用補強框3以外的方法。As shown in FIG. 3 and FIG. 4(a), the reinforcing frame 3 is attached to the outer periphery of the organic EL mask 2. In order to deposit the vapor deposition material with high precision in the glass substrate constituting the organic EL display, the thickness of the organic EL mask 2 is a micron-thick metal plate. When the thickness of the organic EL mask 2 is extremely thin, even if the organic material deposited on the organic EL mask 2 has a large angle and is scattered, no shadow is formed in the vapor deposition region, and the film thickness is ensured. Uniformity. The organic EL mask 2 is an extremely thin and large metal plate, and cannot be maintained in a planar shape by a single body, and the reinforcing frame 3 is attached in order to maintain its shape retaining property. Further, if the shape retaining property of the organic EL mask 2 can be maintained, a method other than the reinforcing frame 3 can be used.

有機EL用遮罩2係以金屬為素材,且形成有規則地排列之多數的開口部4之遮罩板(影像遮罩)。有機EL用遮罩2雖可以使用各種的金屬,此處適用鈷與鎳之合金。有機EL用遮罩2係於蒸鍍發光層的有機材料之蒸鍍裝置(未圖示出)中,使密接於構成有機顯示器之玻璃基板的狀態下,從蒸鍍源使蒸鍍有機材料(以下,稱為蒸鍍物質)。作為發光層之蒸鍍物質,可以使用各種物質,例如可以使用鋁錯合物(tris-aluminum:Alq)等之有機金屬錯合物。另外,也可以將有機金屬錯合物以外的有機化合物(可以是包含金屬者、不包含金屬者)當成蒸鍍物質使用。從蒸鍍源所被蒸發的蒸鍍物質,係從有機EL用遮罩2之形成有開口部4的部分蒸鍍於前述的玻璃基板。藉此,得以在對應玻璃基板上的畫素之區域蒸鍍作為發光層之蒸鍍物質。The organic EL mask 2 is made of a metal material, and is formed with a mask (image mask) of a plurality of openings 4 that are regularly arranged. For the organic EL mask 2, various metals can be used, and an alloy of cobalt and nickel is used here. In the vapor deposition device (not shown) of the organic material for vapor-depositing the light-emitting layer, the organic EL mask 2 is adhered to the glass substrate constituting the organic display, and the organic material is vapor-deposited from the vapor deposition source ( Hereinafter, it is called a vapor deposition material). As the vapor deposition material of the light-emitting layer, various materials can be used. For example, an organic metal complex such as tris-aluminum (Alq) can be used. Further, an organic compound other than the organic metal complex (which may be a metal-containing or metal-free material) may be used as the vapor deposition material. The vapor deposition material evaporated from the vapor deposition source is deposited on the glass substrate from the portion of the organic EL mask 2 where the opening 4 is formed. Thereby, it is possible to vapor-deposit a vapor deposition material as a light-emitting layer in a region corresponding to a pixel on the glass substrate.

雖然可以使用有機EL用遮罩2以玻璃基板蒸鍍特定圖案之蒸鍍物質,但在蒸鍍時,蒸鍍物質也附著於有機EL用遮罩2。附著於有機EL用遮罩2的蒸鍍物質於下一次的蒸鍍製程中,附著於玻璃基板,或使開口部4的開口面積產生變化等之理由,進行有機EL用遮罩2的潔淨來進行蒸鍍物質的去除。The vapor deposition material of a specific pattern can be deposited on the glass substrate by using the organic EL mask 2, but the vapor deposition material adheres to the organic EL mask 2 at the time of vapor deposition. The vapor deposition material adhering to the organic EL mask 2 is adhered to the glass substrate in the next vapor deposition process, or the opening area of the opening 4 is changed, and the organic EL mask 2 is cleaned. The removal of the vapor deposition material is performed.

有機EL用遮罩潔淨裝置1係被設置於基座11,有機EL用遮罩2係被搭載於搭載工作台12,夾頭部13係保持有機EL用遮罩2的補強框3。有機EL用遮罩2係被保持為蒸鍍面(朝向蒸鍍裝置中之蒸鍍源的面,即蒸鍍物質附著的面)朝上之方式。如第2圖也有顯示般,於搭載工作台12及有機EL用遮罩2之間設置微小間隔,夾頭部13保持補強框3。夾頭部13係保持有機EL用遮罩2的相對2邊之補強框3。另外,夾頭部13也可以是保持補強框3的3邊或4邊者。The organic EL mask cleaning device 1 is provided on the susceptor 11, and the organic EL mask 2 is mounted on the mounting table 12, and the chuck portion 13 holds the reinforcing frame 3 of the organic EL mask 2. The organic EL mask 2 is held such that the vapor deposition surface (the surface facing the vapor deposition source in the vapor deposition device, that is, the surface on which the vapor deposition material adheres) faces upward. As shown in FIG. 2, a small space is provided between the mounting table 12 and the organic EL mask 2, and the chuck portion 13 holds the reinforcing frame 3. The chuck portion 13 is a reinforcing frame 3 that holds the opposite sides of the mask 2 for organic EL. Further, the chuck portion 13 may be one or three sides of the reinforcing frame 3 .

另外,於搭載工作台12的下部具備有作為移動手段之移動部14。移動部14係使搭載工作台12朝1方向移動用的移動手段,可以使用滾珠導螺桿手段或線性電動機手段等之任意的移動手段。此處係將移動部14的移動方向設為第1圖的X方向,將與此X方向正交的方向當成Y方向。但移動部14也可以設為能在X方向及Y方向的2個方向移動。Further, a moving portion 14 as a moving means is provided at a lower portion of the mounting table 12. The moving unit 14 is a moving means for moving the mounting table 12 in one direction, and any moving means such as a ball screw mechanism or a linear motor means can be used. Here, the moving direction of the moving portion 14 is referred to as the X direction of the first drawing, and the direction orthogonal to the X direction is referred to as the Y direction. However, the moving unit 14 may be configured to be movable in two directions in the X direction and the Y direction.

於基座11的上部配置振盪特定波長的雷射之雷射光源15。雷射光源15係振盪有機EL用遮罩2的金屬素材會反應之波長的雷射。在有機EL用遮罩2為鈷與鎳的合金之情形時,做成振盪該合金會反應之波長域532nm附近的雷射。在有機EL用遮罩2使用其他素材的情形時,做成振盪該素材會反應的雷射。從雷射光源15所振盪的雷射射入電流鏡16。電流鏡16係使射入的雷射朝向有機EL用遮罩2反射之反射鏡,成為使雷射的反射角高速地變化之雷射掃瞄手段。因此,電流鏡16係具備使本身振動之驅動部(未圖示出),藉由驅動部的振動,射入的雷射之反射角改變,使有機EL用遮罩2中之照射位置改變。藉由使雷射的反射角朝Y方向改變,雷射往Y方向掃瞄。藉由雷射光源15與電流鏡16構成雷射手段,藉由此雷射手段來進行雷射洗淨。當然雷射手段也可以使用其他任意的光學構件。A laser light source 15 that oscillates a laser of a specific wavelength is disposed on the upper portion of the susceptor 11. The laser light source 15 is a laser that oscillates a wavelength at which the metal material of the mask 2 for organic EL is reflected. In the case where the organic EL mask 2 is an alloy of cobalt and nickel, a laser having a wavelength range of 532 nm in which the alloy reacts is oscillated. When the other material is used for the mask 2 for organic EL, a laser that oscillates the material is reflected. The laser oscillated from the laser source 15 is incident on the current mirror 16. The current mirror 16 is a laser scanning means for reflecting the incident laser beam toward the organic EL mask 2, and is a laser scanning means for changing the reflection angle of the laser at a high speed. Therefore, the current mirror 16 is provided with a driving portion (not shown) that vibrates itself, and the reflection angle of the incident laser beam is changed by the vibration of the driving portion, and the irradiation position in the organic EL mask 2 is changed. By changing the reflection angle of the laser toward the Y direction, the laser scans in the Y direction. The laser light source 15 and the current mirror 16 constitute a laser means, and the laser is washed by the laser means. Of course, any other optical component can be used by the laser means.

送風部17係送風手段,吸引部18係吸引手段。吸引部18係具備回收部18B,混合存在於吸引的空氣之雜質(後述的游離產生物)被回收於回收部18B。因此,例如使用過濾器(未圖示出)來將空氣與雜質分離。送風部17的送風縫隙17A與吸引部18的吸引縫隙18A係設置為相向配置,另外,送風縫隙17A與吸引縫隙18A係設置於相同高度的位置。使得來自送風縫隙17A之送風沿著有機EL用遮罩2的表面,且藉由吸引縫隙18A之吸引為沿著有機EL用遮罩2的表面。The air blowing unit 17 is a blowing means, and the suction unit 18 is a suction means. The suction unit 18 includes a collection unit 18B, and impurities (a free product to be described later) that are mixed in the suction air are collected in the collection unit 18B. Thus, for example, a filter (not shown) is used to separate air from impurities. The air blowing slit 17A of the air blowing portion 17 and the suction slit 18A of the suction portion 18 are disposed to face each other, and the air blowing slit 17A and the suction slit 18A are disposed at the same height. The air blow from the air blowing slit 17A is along the surface of the organic EL mask 2, and the suction by the suction slit 18A is along the surface of the organic EL mask 2.

說明以上構造中之動作。從未圖示出之蒸鍍裝置被取出的有機EL用遮罩2,係藉由搭載工作台12的夾頭部13而被固定保持著,藉由移動部14而被移動於X方向。有機EL用遮罩2的X方向中之前端位置位於電流鏡16的下部時(或其前端)時,從雷射光源15振盪雷射。藉由電流鏡16高速振動,使雷射於有機EL用遮罩2的表面朝Y方向掃瞄。於第1圖及第2圖之例子中,係設為進行有機EL用遮罩2的全面之潔淨,電流鏡16係使雷射的反射角改變,於線上掃瞄有機EL用遮罩2的Y方向中之端部間,移動部14被朝X方向移動,有機EL用遮罩2係於X方向及Y方向之2個方向進行面掃瞄,雷射掃瞄於有機EL用遮罩2的全面。另外,為了取得Y方向中之雷射的掃瞄與X方向中之移動的時序,藉由移動部14之有機EL用遮罩2的移動,以間歇性為佳。Explain the actions in the above construction. The organic EL mask 2, which has been taken out from the vapor deposition device, is fixedly held by the chuck portion 13 of the mounting table 12, and is moved in the X direction by the moving portion 14. When the front end position of the organic EL mask 2 in the X direction is located at the lower portion of the current mirror 16 (or its front end), the laser light is oscillated from the laser light source 15. By the high-speed vibration of the current mirror 16, the laser is scanned in the Y direction on the surface of the organic EL mask 2. In the example of FIG. 1 and FIG. 2, it is assumed that the organic EL mask 2 is completely cleaned, and the current mirror 16 changes the reflection angle of the laser to scan the organic EL mask 2 on the line. The moving portion 14 is moved in the X direction between the ends in the Y direction, and the organic EL mask 2 is scanned in two directions in the X direction and the Y direction, and the laser is scanned in the organic EL mask 2 Comprehensive. Further, in order to obtain the timing of the scanning of the laser in the Y direction and the movement in the X direction, the movement of the organic EL mask 2 by the moving portion 14 is preferably intermittent.

有機EL用遮罩2係被保持為蒸鍍面朝上,蒸鍍物質20成為膜狀而附著於蒸鍍面。雷射係以有機EL用遮罩2的表面成為焦點之方式被照射。而且雷射係具有有機EL用遮罩2的金屬素材(鈷與鎳的合金)為反應的波長(532nm),藉由被照射雷射而被給予熱衝擊。藉此,粉碎力作用於附著於有機EL用遮罩2之蒸鍍物質,成為游離產生物而朝上方飛散。此處,蒸鍍物質藉由雷射照射而被粉碎時,附著於有機EL用遮罩2之蒸鍍物質被粉碎為具有微小粒徑之粉體的同時,也產生氣體。因此,游離產生物不單是微小粉體,也包含氣體。The organic EL mask 2 is held such that the vapor deposition surface faces upward, and the vapor deposition material 20 is in a film shape and adheres to the vapor deposition surface. The laser beam is irradiated so that the surface of the organic EL mask 2 becomes a focus. Further, the laser system has a wavelength (532 nm) at which a metal material (an alloy of cobalt and nickel) of the organic EL mask 2 is reacted, and is subjected to thermal shock by being irradiated with a laser. As a result, the pulverizing force acts on the vapor deposition material adhering to the organic EL mask 2, and becomes a free product and scatters upward. When the vapor deposition material is pulverized by the laser irradiation, the vapor deposition material adhering to the organic EL mask 2 is pulverized into a powder having a fine particle diameter, and a gas is also generated. Therefore, the free product is not only a fine powder but also a gas.

粉碎的游離產生物為比重極小的粉體或氣體,藉由使用雷射之熱衝擊,朝上方順勢地飛散。但如將雷射的強度設定成過度弱,則蒸鍍物質不會粉碎,且有不朝上方飛散之虞。因此,雷射的強度係設定為能粉碎蒸鍍物質而使游離產生物飛散的強度。另一方面,如將雷射的強度設定得過度高,則對有機EL用遮罩2給予過多的熱衝擊,有造成損傷之虞。因此,為了使蒸鍍物質20粉碎及飛散,以設定為必要最低限度的強度為佳。例如依據有機EL用遮罩2的形狀或蒸鍍物質20的材料之附著強度等,將由雷射光源15所振盪之雷射的強度設定為最適當。The pulverized free product is a powder or gas having a very small specific gravity, and is scattered upward by using a thermal shock of a laser. However, if the intensity of the laser is set to be excessively weak, the vapor deposition material does not pulverize and there is a possibility that it does not scatter upward. Therefore, the intensity of the laser is set to an intensity capable of pulverizing the vapor deposition material to cause the free product to scatter. On the other hand, if the intensity of the laser is set too high, excessive thermal shock is applied to the organic EL mask 2, which may cause damage. Therefore, in order to pulverize and scatter the vapor deposition material 20, it is preferable to set the minimum necessary strength. For example, the intensity of the laser oscillated by the laser light source 15 is set to be optimum according to the shape of the mask 2 for the organic EL or the adhesion strength of the material of the vapor deposition material 20.

第4(b)圖係表示有機EL用遮罩2之開口部4的放大圖。如此圖所示般,有機EL用遮罩2的開口部4之邊緣部份4E,已採用推拔形狀者為多。如前述般,基於有機EL用遮罩2的開口部4之開口面積一部份或全部被堵塞,蒸鍍精度顯著惡化而成為不能使用。如第4(b)圖所示般,開口部4之邊緣部份4E係成為推拔形狀,即使是極薄的有機EL用遮罩2之中,成為更薄的部位,藉由熱衝擊,有更高的粉碎力作用。因此,此部位的蒸鍍物質20有非常高的粉碎力作用,且朝上方飛散之能量也變得很強。因此,限定於邊緣部份4E之情形時,由雷射光源15所振盪的雷射之強度,變成不需要設定為太高。Fig. 4(b) is an enlarged view showing the opening portion 4 of the mask 2 for organic EL. As shown in the figure, the edge portion 4E of the opening portion 4 of the mask 2 for organic EL has been pushed and removed. As described above, the opening area of the opening 4 of the mask 2 for organic EL is partially or completely blocked, and the vapor deposition accuracy is remarkably deteriorated, so that it cannot be used. As shown in Fig. 4(b), the edge portion 4E of the opening portion 4 has a push-pull shape, and even a thinner organic EL mask 2 has a thinner portion, and is thermally shocked. It has a higher pulverizing effect. Therefore, the vapor deposition material 20 at this portion has a very high pulverizing force, and the energy of scattering upward becomes also strong. Therefore, when the edge portion 4E is limited, the intensity of the laser oscillated by the laser light source 15 does not need to be set too high.

如第5圖所示般,藉由送風部17及吸引部18所形成的層流狀態之氣流30得以形成,此氣流30係被形成於從有機EL用遮罩2分開特定間隔之位置,且沿著有機EL用遮罩2的表面之流動。為了使氣流30成為層流狀態,以特定的風量及風速由送風縫隙17A送風,另外,從吸引縫隙18A進行吸引。為了做成層流狀態之氣流30,風量及風速係設定為必要的最小限度。另外,並非以朝向有機EL用遮罩2或接近有機EL用遮罩2之方式來形成氣流,而是於從有機EL用遮罩2分開某種程度之位置且沿著有機EL用遮罩2的表面來形成氣流。於有機EL用遮罩2形成多數的開口部4,氣流如與有機EL用遮罩2衝擊或接觸時,氣流成為亂流狀態,微粒化而飛散之灰塵再度附著於有機EL用遮罩2。因此,形成層流狀態之氣流30。As shown in FIG. 5, the airflow 30 in the laminar flow state formed by the air blowing portion 17 and the suction portion 18 is formed, and the air flow 30 is formed at a position separated from the organic EL mask 2 by a certain interval, and The flow along the surface of the mask 2 for organic EL. In order to make the airflow 30 into a laminar flow state, air is blown by the air blowing slit 17A at a specific air volume and wind speed, and suction is performed from the suction slit 18A. In order to create the laminar flow 30, the air volume and the wind speed are set to the minimum necessary. In addition, the airflow is not formed so as to face the organic EL mask 2 or the organic EL mask 2, but is separated from the organic EL mask 2 to some extent and along the organic EL mask 2 The surface to form the airflow. In the organic EL mask 2, a large number of openings 4 are formed, and when the airflow is impacted or contacted with the organic EL mask 2, the airflow is in a turbulent state, and the dust that has been atomized and scattered is again adhered to the organic EL mask 2. Thus, a gas stream 30 in a laminar flow state is formed.

氣流30係形成於從有機EL用遮罩2分開之位置,於氣流30與有機EL用遮罩2之間存在有無風區域31。另外,所謂無風區域31係實質上為無風狀態之沒有流動的區域,成為與具有流動之層流狀態的氣流30不同的區域。即氣流30係形成具有流動的區域,無風區域31係形成沒有流動的區域。微粒化而飛散之游離產生物21雖通過無風區域31,但此區域沒有流動,不會對游離產生物21的行進方向造成影響。因此,游離產生物21通過無風區域31而進入氣流30,被氣流30的流動所捕捉而被搬運。如前述般,游離產生物21係極微小之粉體或氣體,藉由層流狀態之氣流30而被確實地捕捉,朝向吸引部18而被回收。換言之,氣流30成為搬運游離產生物21之搬運流。The airflow 30 is formed at a position separated from the organic EL mask 2, and a windless region 31 exists between the airflow 30 and the organic EL mask 2. Further, the wind-free region 31 is a region that is substantially in a windless state and does not flow, and is a region different from the airflow 30 having a laminar flow state. That is, the airflow 30 forms a region having a flow, and the windless region 31 forms a region where there is no flow. Although the particulate matter generated and scattered free product 21 passes through the windless region 31, this region does not flow and does not affect the traveling direction of the free product 21. Therefore, the free product 21 enters the airflow 30 through the windless region 31, is captured by the flow of the airflow 30, and is transported. As described above, the free product 21 is a very minute powder or gas, and is reliably captured by the laminar flow 30, and is collected toward the suction portion 18. In other words, the air flow 30 serves as a transport flow for transporting the free product 21.

而且,將氣流30做成層流狀態,於其下部形成無風區域31,密接有機EL用遮罩2的表面之區域不會成為亂流。因此,從有機EL用遮罩2所飛散之游離產生物21不會回到有機EL用遮罩2。此時,氣流30與有機EL用遮罩2之間做成為必要之最小限度的間隔。如使該間隔過度地分開時,微粒化而朝上方飛散之灰塵無法抵達氣流30的高度位置,而成為無法回收。藉此,從有機EL用遮罩2一度去除之游離產生物21不會再度附著於有機EL用遮罩2,可以發揮極高的潔淨效果。氣流30與有機EL用遮罩2的間隔,例如可以依據有機EL用遮罩2的開口部4之面積或開口部4的密度、有機EL用遮罩2的材質等來決定。Further, the airflow 30 is in a laminar flow state, and the windless region 31 is formed in the lower portion thereof, and the region of the surface of the mask 2 for the organic EL is not turbulent. Therefore, the free product 21 scattered from the organic EL mask 2 does not return to the organic EL mask 2. At this time, a minimum interval between the airflow 30 and the organic EL mask 2 is required. When the interval is excessively separated, the dust that is atomized and scattered upward cannot reach the height position of the airflow 30, and cannot be recovered. As a result, the free product 21 once removed from the organic EL mask 2 does not adhere to the organic EL mask 2 again, and an extremely high cleaning effect can be exhibited. The distance between the airflow 30 and the organic EL mask 2 can be determined, for example, depending on the area of the opening 4 of the organic EL mask 2, the density of the opening 4, the material of the organic EL mask 2, and the like.

電流鏡16係使雷射於有機EL用遮罩2的Y方向掃瞄,雷射的掃瞄速度非常地高速。因此,事先於有機EL用遮罩2的上方涵蓋廣範圍地形成層流狀態的氣流30。即使是雷射的掃瞄速度非常地高速,於其上方位置一定有氣流30形成,飛散的游離產生物21被氣流30的流動確實地捕捉而搬運。此處,對有機EL用遮罩2的全面進行雷射掃瞄,氣流30係設為涵蓋有機EL用遮罩2的全面以上之範圍而形成。因此,送風部17的送風縫隙17A與吸引部18的吸引縫隙18A,其縫隙長度係個別比有機EL用遮罩2的Y方向之長度還長地構成。藉此,可以無剩餘於回收飛散之游離產生物21。The current mirror 16 scans the laser beam in the Y direction of the organic EL mask 2, and the scanning speed of the laser is extremely high. Therefore, the gas flow 30 in a laminar flow state is widely formed in advance over the mask 2 for the organic EL. Even if the scanning speed of the laser is extremely high, the airflow 30 is always formed at the upper position, and the scattered free product 21 is reliably captured and transported by the flow of the airflow 30. Here, the entire organic EL mask 2 is subjected to laser scanning, and the air flow 30 is formed to cover the entire range of the organic EL mask 2 . Therefore, the gap length between the air blowing slit 17A of the air blowing portion 17 and the suction slit 18A of the suction portion 18 is longer than the length of the organic EL mask 2 in the Y direction. Thereby, there is no remaining free product 21 which is recovered and recovered.

藉由以上,以雷射將有機EL用遮罩2的蒸鍍物質20予以粉碎,當成游離產生物21使其朝上方飛散,藉由氣流30來搬運游離產生物21而予以去除,得以實現藉由完全非接觸之潔淨。藉此,不會對有機EL用遮罩2造成損傷而獲得潔淨效果。另外,使氣流30在從有機EL用遮罩2分開之位置成為層流狀態,游離產生物21不會回到有機EL用遮罩2,可以不再附著地被吸引部18所回收。因此,可不對有機EL用遮罩2造成損傷而確實地進行潔淨,且不使用薄膜之黏貼機構等,可以謀求機構的簡化及裝置的小型化。此有機EL用遮罩潔淨裝置1可以發揮極高的洗淨效果,能夠以99%以上的潔淨度幾乎完全地潔淨有機EL用遮罩2。By the above, the vapor deposition material 20 of the organic EL mask 2 is pulverized by the laser, and the free product 21 is scattered upward, and the free product 21 is transported by the air current 30 to be removed. Clean by completely non-contact. Thereby, the organic EL mask 2 is not damaged and a clean effect is obtained. Further, the airflow 30 is brought into a laminar flow at a position separated from the organic EL mask 2, and the free-generating material 21 does not return to the organic EL mask 2, and can be recovered by the suction portion 18 without being attached. Therefore, it is possible to simplify the mechanism and reduce the size of the device without causing damage to the organic EL mask 2 and reliably cleaning it without using a film bonding mechanism or the like. The organic EL mask cleaning device 1 can exhibit an extremely high cleaning effect, and the organic EL mask 2 can be almost completely cleaned with a cleanliness of 99% or more.

於前述之實施型態中,作為去除從有機EL用遮罩2所飛散之游離產生物21的去除手段,雖使用層流狀態的氣流30,但也可以不使用此氣流30。例如從有機EL用遮罩2分開之方向使產生吸引力,藉由雷射之掃瞄將飛散之游離產生物21朝正交方向吸引亦可。但在此情形下,空氣的流動變成亂流狀態,游離產生物21有再附著於有機EL用遮罩2之可能性。且吸引力對有機EL用遮罩2作用,有機EL用遮罩2會扭曲或變形。但即使是有機EL用遮罩2基於吸引力,也不會被損傷之具有某種程度的厚度之情形等,作為去除手段,也可以是從有機EL用遮罩2分開之方向使吸引力作用者。In the above-described embodiment, the airflow 30 in the laminar flow state is used as the means for removing the free-generating material 21 scattered from the organic EL mask 2, but the airflow 30 may not be used. For example, the attraction force is generated in the direction in which the organic EL mask 2 is separated, and the scattered free product 21 may be attracted to the orthogonal direction by the laser scanning. However, in this case, the flow of the air becomes a turbulent state, and the free product 21 may be attached to the mask 2 for organic EL. The attraction is also applied to the mask 2 for the organic EL, and the mask 2 for the organic EL is distorted or deformed. However, even if the mask 2 for organic EL is not damaged due to the attraction force, it may be a removal means, and the attraction force may be separated from the direction in which the organic EL mask 2 is separated. By.

另外,於前述之本實施型態中,藉由對有機EL用遮罩2的全面照射雷射來進行潔淨,於能夠潔淨有機EL用遮罩2的特定區域即可的情形時(區域洗淨的情形),則限定於該區域來使雷射掃瞄。此時,將藉由移動部14之移動範圍與藉由電流鏡16之反射角的範圍之其中一方或兩方縮小至一部份。另外,於進行區域洗淨的情形,氣流30的範圍也是可以涵蓋潔淨對象之區域即可,不需要於涵蓋有機EL用遮罩2的全面之區域形成氣流30。In addition, in the above-described embodiment, the organic EL mask 2 is irradiated with a laser to clean the surface of the organic EL mask 2 (the area is cleaned). The situation is limited to this area to scan the laser. At this time, one or both of the range of movement of the moving portion 14 and the range of the reflection angle of the current mirror 16 are reduced to a part. Further, in the case where the area is cleaned, the range of the airflow 30 is also an area which can cover the object to be cleaned, and it is not necessary to form the airflow 30 in the entire area covering the mask 2 for the organic EL.

於前述之實施型態中,係藉由移動部14使有機EL用遮罩2朝X方向移動,電流鏡16係使雷射朝Y方向掃瞄來進行區域洗淨。移動部14及電流鏡16可以自動控制,藉由此手法,可以自動地進行有機EL用遮罩2的潔淨。另外,即使藉由其他手法,也可以自動地進行潔淨。例如設為將有機EL用遮罩2固定的狀態,使電流鏡16朝2個方向振動,來使雷射掃瞄於X方向及Y方向之2個方向。In the above-described embodiment, the organic EL mask 2 is moved in the X direction by the moving portion 14, and the current mirror 16 scans the laser in the Y direction to perform region cleaning. The moving portion 14 and the current mirror 16 can be automatically controlled, and by this means, the cleaning of the organic EL mask 2 can be automatically performed. In addition, it can be cleaned automatically even by other methods. For example, in a state in which the organic EL mask 2 is fixed, the current mirror 16 is vibrated in two directions, and the laser is scanned in two directions of the X direction and the Y direction.

但在藉由電流鏡16來使雷射掃瞄之手法的情形,暫且不論有機EL用遮罩2的中心,端部中,雷射具有大的角度而射入有機EL用遮罩2。此時,於有機EL用遮罩2的中心與端部會於洗淨度產生某些差異。另外,有機EL用遮罩2為大型的金屬板,於Y方向的雷射掃瞄也需要某種程度之時間。因此,非以雷射掃瞄,而使有機EL用遮罩2與雷射光源15相對地移動來進行區域洗淨亦可。However, in the case of the laser scanning by the current mirror 16, the laser beam is incident on the organic EL mask 2 at a large angle in the end portion regardless of the center of the organic EL mask 2. At this time, there are some differences in the degree of cleansing at the center and the end of the mask 2 for organic EL. Further, the organic EL mask 2 is a large metal plate, and it takes a certain amount of time for the laser scanning in the Y direction. Therefore, the organic EL mask 2 and the laser light source 15 are relatively moved to perform area cleaning without laser scanning.

例如將電流鏡16當成固定的反射鏡來使用,使移動部14朝X方向及Y方向之2個方向移動。雷射的照射位置雖然沒有變化,但藉由移動部14之移動,有機EL用遮罩2於2個方向位移,成為在反射鏡被反射的雷射與有機EL用遮罩2被相對地移動。在反射鏡被反射之雷射於有機EL用遮罩2的任何部位都以正交方向射入。因此,不會產生基於射入角不同所引起之洗淨度的差異之問題。在此情形,雷射手段雖係藉由雷射光源15與反射鏡所構成,但不使用反射鏡,藉由將雷射光源15的振盪方向成為有機EL用遮罩2的正交方向,雷射手段成為藉由雷射光源15來構成。另外,在此情形,相對移動手段成為藉由移動部14所構成。For example, the current mirror 16 is used as a fixed mirror, and the moving portion 14 is moved in two directions of the X direction and the Y direction. Although the irradiation position of the laser beam is not changed, the organic EL mask 2 is displaced in two directions by the movement of the moving portion 14, and the laser beam reflected by the mirror and the organic EL mask 2 are relatively moved. . The laser beam reflected by the mirror is incident on the organic EL mask 2 in any direction in the orthogonal direction. Therefore, there is no problem of the difference in the degree of washing caused by the difference in the injection angle. In this case, the laser means is constituted by the laser light source 15 and the mirror, but the mirror is not used, and the direction of oscillation of the laser light source 15 is the orthogonal direction of the mask 2 for the organic EL. The shooting means is constituted by the laser light source 15. Further, in this case, the relative moving means is constituted by the moving portion 14.

於藉由相對移動來進行區域洗淨的情形,係藉由移動部14使有機EL用遮罩2移動來進行,和能高速地使照射位置改變的雷射掃瞄相比,潔淨速度變得低速。因此,於藉由相對移動之區域洗淨中,雷射的光點以使用盡可能大者為佳。In the case where the area is cleaned by the relative movement, the organic EL mask 2 is moved by the moving unit 14, and the cleaning speed becomes higher than that of the laser scanning which can change the irradiation position at a high speed. Low speed. Therefore, in the case of washing by the relatively moving area, it is preferable that the spot of the laser is used as large as possible.

另外,於藉由相對移動之區域洗淨中,將搭載有機EL用遮罩2之搭載工作台12加以固定(即不設置移動部14),而使前述之反射鏡朝2個方向移動亦可。藉此,也可以進行區域洗淨。另外,將前述之反射鏡與雷射光源15做成一體之單元來構成,使此單元朝2個方向移動亦可。Further, in the cleaning by the relatively moving region, the mounting table 12 on which the organic EL mask 2 is mounted is fixed (that is, the moving portion 14 is not provided), and the mirror can be moved in two directions. . Thereby, the area can also be washed. Further, the mirror and the laser light source 15 are integrally formed as a unit, and the unit may be moved in two directions.

接著,參照第6圖來說明變形例1。此變形例1係將有機EL用遮罩2分割為複數個區域來進行潔淨之例子。於第6圖中,將雷射光源15配置於2處(設為第1雷射光源15a、第2雷射光源15b),電流鏡16也配置於2處(設為第1電流鏡16a、第2電流鏡16b)。有機EL用遮罩2被分割為2個區域(設為被分割成第1區域2a與第2區域2b者),第1區域2a係從第1雷射光源15a所振盪的雷射藉由第1電流鏡16a被掃瞄來進行潔淨,第2區域2b係從第2雷射光源15b所振盪的雷射藉由第2電流鏡16b而被掃瞄來進行潔淨。第1區域2a、第2區域2b都相同地附著有蒸鍍物質20,第1雷射光源15a與第2雷射光源15b都振盪相同波長之雷射。Next, a modification 1 will be described with reference to Fig. 6 . In the first modification, the organic EL mask 2 is divided into a plurality of regions to be cleaned. In the sixth diagram, the laser light source 15 is disposed at two places (the first laser light source 15a and the second laser light source 15b), and the current mirror 16 is also disposed at two places (the first current mirror 16a, The second current mirror 16b). The organic EL mask 2 is divided into two regions (which are divided into the first region 2a and the second region 2b), and the first region 2a is a laser that is oscillated from the first laser light source 15a. The current mirror 16a is scanned for cleaning, and the second region 2b is scanned by the second current mirror 16b to be cleaned by the second current mirror 16b. The vapor deposition material 20 adheres to the first region 2a and the second region 2b in the same manner, and both the first laser light source 15a and the second laser light source 15b oscillate a laser beam of the same wavelength.

如第6圖般,將有機EL用遮罩2分割為2個區域,藉由第1雷射光源15a之雷射與第2雷射光源15b之雷射來分擔個別區域以進行潔淨,可以同時地潔淨2個區域,且各區域成為有機EL用遮罩2的一半的區域,可以大幅地縮短(約縮短一半)潔淨時間。藉此,可以大幅地提升有機EL顯示器的生產效率。藉由使雷射光源15與電流鏡16之配置台數變多,可以進一步縮短潔淨時間。As shown in Fig. 6, the organic EL mask 2 is divided into two regions, and the laser beam of the first laser light source 15a and the laser of the second laser light source 15b share the individual regions for cleaning. Two areas are cleaned, and each area becomes a half of the organic EL mask 2, and the cleaning time can be greatly shortened (about half). Thereby, the production efficiency of the organic EL display can be greatly improved. By increasing the number of the laser light source 15 and the current mirror 16, the cleaning time can be further shortened.

接著,利用第7圖來說明變形例2。於變形例1中,雖將有機EL用遮罩2於X方向分割為2個區域,但在變形例2中,係於Y方向分割為2個區域。在此情形,將第1雷射光源15a與第2雷射光源15b於Y方向並行配置,另外,將第1電流鏡16a與第2電流鏡16b於Y方向並行配置。由第1雷射光源15a所振盪的雷射進行第1區域2a之掃瞄,由第2雷射光源15b所振盪的雷射進行第2區域2b之掃瞄。如前述般,藉由雷射掃瞄之潔淨,從洗淨度或掃瞄速度等之觀點而言,其掃瞄寬度以盡可能窄者為佳。於變形例2中,係於Y方向分割為2個區域,掃瞄寬度和第1圖之例子相比成為一半。因此,雷射射入各區域之Y方向中之端部時的射入角可以變小,變成可以降低洗淨度的差異。另外,掃瞄時間也可以大幅地減少。因此,可以進行高速且洗淨度高的潔淨。Next, a modification 2 will be described using FIG. In the first modification, the organic EL mask 2 is divided into two regions in the X direction. However, in the second modification, the mask 2 is divided into two regions in the Y direction. In this case, the first laser light source 15a and the second laser light source 15b are arranged in parallel in the Y direction, and the first current mirror 16a and the second current mirror 16b are arranged in parallel in the Y direction. The laser oscillated by the first laser light source 15a performs scanning of the first region 2a, and the laser oscillated by the second laser light source 15b performs scanning of the second region 2b. As described above, by the cleaning of the laser scanning, the scanning width is preferably as narrow as possible from the viewpoints of the degree of cleaning or the scanning speed. In the second modification, the area is divided into two regions in the Y direction, and the scan width is half as compared with the example of the first figure. Therefore, the incident angle when the laser beam enters the end portion of each region in the Y direction can be made small, and the difference in the degree of cleaning can be reduced. In addition, the scanning time can be greatly reduced. Therefore, it is possible to perform high-speed and high-cleanness cleaning.

接著,使用第8圖來說明變形例3。於此變形例3中,如第8圖所示般,使用稜鏡19將從1個雷射光源15所振盪的雷射藉由稜鏡19予以分割。稜鏡19係將射入光的一部份予以反射,使一部份透過之光束分離器,發揮該功能之功能膜為對於射入角以45度所形成之光學元件。在使用此稜鏡19之情形,無法進行雷射之掃瞄,做成使移動部14在X方向及Y方向移動,來進行區域洗淨。在變形例3中,係將有機EL用遮罩2分割為2個區域,使用藉由稜鏡19所被分岔之2個雷射來進行潔淨,潔淨時間大約可以縮短為一半。Next, a modification 3 will be described using FIG. In the third modification, as shown in FIG. 8, the laser oscillated from one laser light source 15 is divided by 稜鏡19 using 稜鏡19. The 稜鏡19 system reflects a part of the incident light, and a part of the beam splitter that transmits the function, and the functional film that performs the function is an optical element formed at an angle of incidence of 45 degrees. In the case where the crucible 19 is used, the scanning of the laser is not possible, and the moving portion 14 is moved in the X direction and the Y direction to perform the area cleaning. In the third modification, the organic EL mask 2 is divided into two regions, and the two lasers branched by the crucible 19 are used for cleaning, and the cleaning time can be shortened to approximately half.

如前述般,於藉由移動部14之相對移動的潔淨,就潔淨速度而言,比藉由雷射掃瞄之潔淨為低速,但對於有機EL用遮罩2能以正交方向來射入雷射,就洗淨度而言,較為有利。因此,藉由複數配置稜鏡19,且設置對於有機EL用遮罩2為正交之複數個雷射,能夠進行短時間且洗淨度高的潔淨。此時,來自雷射光源15之雷射的光點直徑以大者為佳。另外,即使不使用稜鏡19,例如配置複數個雷射光源15,於正交於有機EL用遮罩2之方向照射複數的雷射亦可。As described above, the cleaning speed by the movement of the moving portion 14 is lower than the cleaning speed by the laser scanning, but the organic EL mask 2 can be injected in the orthogonal direction. Lasers are more advantageous in terms of cleanliness. Therefore, by arranging the plural 19 and providing a plurality of lasers orthogonal to the organic EL mask 2, it is possible to perform cleaning with a high degree of cleaning in a short time. At this time, the diameter of the spot of the laser from the laser light source 15 is preferably larger. Further, even if the cymbal 19 is not used, for example, a plurality of laser light sources 15 are disposed, and a plurality of laser beams may be irradiated in a direction orthogonal to the mask 2 for the organic EL.

接著,說明變形例4。此變形例4係從有機EL用遮罩2的背面側形成上升氣流的例子。如前述般,對有機EL用遮罩2照射雷射使游離產生物21飛散,藉由氣流30使已飛散的游離產生物21幾乎完全地去除。但游離產生物21為比重極小的粉體或氣體,雖可發揮幾乎100%之去除率,但極微量之游離產生物21未被氣流30所去除而有落下的可能,有無法發揮完全100%之去除率的情形。Next, a modification 4 will be described. This modification 4 is an example in which an ascending air current is formed from the back side of the organic EL mask 2 . As described above, the organic EL mask 2 is irradiated with a laser to cause the free product 21 to scatter, and the scattered free product 21 is almost completely removed by the air current 30. However, the free product 21 is a powder or a gas having a very small specific gravity, and although it can exhibit a removal rate of almost 100%, a very small amount of the free product 21 is not removed by the gas stream 30 and may fall, and it is impossible to completely 100%. The case of the removal rate.

特別是,有機EL用遮罩2是需要極為小心處理的金屬板,如照射過度高強度的雷射時,大的衝擊作用於有機EL用遮罩2,而有造成損傷之虞。因此,雷射光源15的振盪強度無法設定得太高,無法對有機EL用遮罩2給予太強的能量,有無法飛散至氣流30的位置之情形。即作為雷射光源15的設定強度,要被調節為能將蒸鍍物質20粉碎而使飛散至氣流30的位置之必要最小限度的強度。因此,雖然已飛散的游離產生物21幾乎都到達氣流30的位置,但有極小一部份無法到達氣流30而落下的情形。特別是如第4(b)圖所示般,邊緣部份4E做成推拔形狀的關係,形成斜面,將附著於此邊緣部份4E的蒸鍍物質20予以粉碎時之游離產生物21,有無法到達氣流30的位置之傾向。In particular, the mask 2 for an organic EL is a metal plate that requires extremely careful handling. When an excessively high-intensity laser is irradiated, a large impact acts on the mask 2 for the organic EL, which causes damage. Therefore, the oscillation intensity of the laser light source 15 cannot be set too high, and the organic EL mask 2 cannot be given too much energy, and there is a case where it cannot be scattered to the position of the airflow 30. That is, the set intensity of the laser light source 15 is adjusted to be the minimum necessary intensity to pulverize the vapor deposition material 20 to be scattered to the position of the air current 30. Therefore, although the scattered free product 21 almost reaches the position of the airflow 30, there is a case where a very small portion cannot reach the airflow 30 and fall. In particular, as shown in Fig. 4(b), the edge portion 4E is formed in a push-and-pull relationship, and a bevel is formed, and the vapor-deposited material 20 adhered to the edge portion 4E is pulverized, and the free product 21 is pulverized. There is a tendency that the position of the airflow 30 cannot be reached.

無法到達氣流30的游離產生物21,會朝向有機EL用遮罩2落下,再度附著於有機EL用遮罩2。此時,不單是有機EL用遮罩2的表面(蒸鍍時朝向蒸鍍源之面),游離產生物21也再度附著於背面(表面的相反面)。如第3圖所示般,於有機EL用遮罩2形成有多數的開口部4,且開口部4的孔徑比游離產生物21的尺寸大很多,游離產生物21從開口部4落下。而且,落下開口部4之游離產生物21被捲入有機EL用遮罩2的背面,再度附著於有機EL用遮罩2的背面。有機EL用遮罩2的背面係於蒸鍍時面接玻璃基板的面,游離產生物21如附著於背面時,在新的玻璃基板之蒸鍍時,附著於背面的游離產生物21會被轉印於玻璃基板而污損該玻璃基板。The free product 21 that does not reach the airflow 30 falls toward the organic EL mask 2 and is again adhered to the organic EL mask 2. At this time, not only the surface of the mask 2 for organic EL (the surface facing the vapor deposition source during vapor deposition), but also the free product 21 adheres to the back surface (opposite surface of the surface). As shown in FIG. 3, a plurality of openings 4 are formed in the organic EL mask 2, and the aperture of the opening 4 is much larger than the size of the free product 21, and the free product 21 falls from the opening 4. In addition, the free product 21 of the falling opening portion 4 is wound around the back surface of the organic EL mask 2 and adhered to the back surface of the organic EL mask 2 again. The back surface of the organic EL mask 2 is attached to the surface of the glass substrate during vapor deposition, and when the free product 21 is adhered to the back surface, the free product 21 adhering to the back surface is transferred during vapor deposition of the new glass substrate. It is printed on a glass substrate to stain the glass substrate.

因此,設置如第9圖及第10圖所示之上升氣流形成裝置40。如第9圖及第10圖所示般,上升氣流形成裝置40係具備:框架41與空氣供給部42與多數的空氣噴出孔43及夾頭部44所概略地構成。另外,空氣噴出孔43係以虛線表示。框架41係形成內部被閉鎖的空間之箱體,於側面形成有空氣供給部42。另外,於其上面形成有多數的空氣噴出孔43。空氣供給部42係對框架41供給空氣用之供給部,由此空氣供給部42所供給的空氣流入框架41的內部,從形成於上面之多數的空氣噴出孔43朝上方噴出。於框架41的上面均等且分散地配置各空氣噴出孔43,於框架41的上面形成朝上方之上升氣流。Therefore, the ascending airflow forming device 40 as shown in Figs. 9 and 10 is provided. As shown in FIGS. 9 and 10, the updraft forming device 40 is configured such that the frame 41 and the air supply unit 42 and the plurality of air ejection holes 43 and the chuck portion 44 are roughly configured. Further, the air ejection holes 43 are indicated by broken lines. The frame 41 is a casing that forms a space that is internally closed, and an air supply portion 42 is formed on the side surface. Further, a plurality of air ejection holes 43 are formed on the upper surface. The air supply unit 42 supplies the air supply unit to the frame 41, whereby the air supplied from the air supply unit 42 flows into the inside of the frame 41, and is ejected upward from a plurality of air ejection holes 43 formed in the upper surface. Each of the air ejection holes 43 is evenly and evenly distributed on the upper surface of the frame 41, and an upwardly rising airflow is formed on the upper surface of the frame 41.

夾頭部44係保持有機EL用遮罩2之構件,被固定地配置於框架41的上面。有機EL用遮罩2係被夾頭部44保持為蒸鍍面(朝向蒸鍍裝置中之蒸鍍源的面,即蒸鍍物質20附著之面)朝上。另外,將夾頭部44做成L字狀,成為於有機EL用遮罩2與框架41的上面之間設置有微小的間隔。另外,只要是能於有機EL用遮罩2與框架41的上面之間保有微小的間隔者,可以採用任意的構造。The chuck portion 44 is a member that holds the mask 2 for the organic EL, and is fixedly disposed on the upper surface of the frame 41. The organic EL mask 2 is held by the chucking head 44 so that the vapor deposition surface (the surface facing the vapor deposition source in the vapor deposition device, that is, the surface on which the vapor deposition material 20 adheres) faces upward. Further, the clip head portion 44 is formed in an L shape, and a slight space is provided between the organic EL mask 2 and the upper surface of the frame 41. In addition, any structure can be adopted as long as it can maintain a slight space between the organic EL mask 2 and the upper surface of the frame 41.

藉由以上的上升氣流形成裝置40,對於有機EL用遮罩2在進行使用雷射手段之雷射洗淨之間,成為經常形成有上升氣流。因此,從空氣供給部42對框架41供給空氣,經常地於框架41的上面全體形成上升氣流。第11圖的UF係表示形成於有機EL用遮罩2的開口部4之上升氣流。於有機EL用遮罩2的正下方之區域,藉由上升氣流形成裝置40形成有上升氣流UF,於有機EL用遮罩2的開口部4,從背面2R朝向表面2S形成有上升氣流UF。According to the above-described updraft forming device 40, the organic EL mask 2 is often formed with an ascending airflow between the laser cleaning using the laser device. Therefore, air is supplied to the frame 41 from the air supply unit 42, and an ascending air current is often formed on the entire upper surface of the frame 41. UF of Fig. 11 shows the ascending air current formed in the opening portion 4 of the mask 2 for organic EL. In the region immediately below the mask 2 for the organic EL, the ascending airflow UF is formed by the ascending airflow forming device 40, and the ascending airflow UF is formed from the rear surface 2R toward the surface 2S in the opening 4 of the organic EL mask 2.

如前述般,於進行雷射洗淨時,即使沒有到達氣流30的一部份之游離產生物落下,且朝向開口部4落下,藉由形成於開口部4之上升氣流UF,落下的游離產生物再度被朝上方推回的關係,游離產生物不會被捲入有機EL用遮罩2的背面2R。因此,游離產生物不會再度附著於背面2R。As described above, when the laser cleaning is performed, even if a part of the free product that has not reached the air current 30 falls and falls toward the opening portion 4, the free flow of the falling is generated by the ascending air current UF formed in the opening portion 4. In the relationship that the object is pushed back upward, the free product is not caught in the back surface 2R of the mask 2 for organic EL. Therefore, the free product does not adhere to the back surface 2R again.

上升氣流UF基本上係形成為不使游離產生物再度附著於背面2R者,此外,也發揮使在雷射洗淨時飛散的游離產生物上升用之輔助的功能。附著於有機EL用遮罩2之蒸鍍物質20,藉由雷射被粉碎,游離產生物欲朝上方飛散,藉由形成上升氣流UF,受到上升氣流UF的流動,游離產生物更欲向上高升。即不單藉由雷射之飛散,基於藉由雷射之飛散與上升氣流UF的相乘效果,游離產生物更為上升。The updraft UF is basically formed so as not to cause the free product to adhere to the back surface 2R again, and also functions to assist the rise of the free product which is scattered during the laser cleaning. The vapor deposition material 20 adhering to the mask 2 for organic EL is pulverized by the laser, and the free product is scattered upward. By forming the ascending air current UF, the flow of the upward flow UF is caused, and the free product is more likely to rise upward. That is, not only by the scattering of the laser, but also by the synergistic effect of the scattering of the laser and the updraft UF, the free product rises further.

如前述般,為了避免過多的衝擊作用於有機EL用遮罩2而造成損傷,雷射光源15所振盪的雷射強度無法設定得太高。因此,為了游離產生物之飛散無法給予充分的衝擊,在只藉由此衝擊的能量來使游離產生物飛散的情形,無法飛散至太高的位置。但是從有機EL用遮罩2的下方形成有上升氣流UF,此上升氣流UF當輔助,使游離產生物進一步朝上上升。因此,即使不將雷射光源15的振盪強度設定得很高,藉由上升氣流UF的輔助,也可以充分地使游離產生物上升至氣流30的位置。As described above, in order to prevent damage caused by excessive impact on the organic EL mask 2, the laser intensity oscillated by the laser light source 15 cannot be set too high. Therefore, in order to prevent the scattering of the free-generating material from being able to give a sufficient impact, it is impossible to fly to a position that is too high in the case where the free-generating material is scattered by the energy of the impact. However, an ascending airflow UF is formed from the lower surface of the organic EL mask 2, and the ascending airflow UF is assisted to cause the free-generating material to rise further upward. Therefore, even if the oscillation intensity of the laser light source 15 is not set high, the free-generating material can be sufficiently raised to the position of the airflow 30 by the assistance of the upward airflow UF.

上升氣流形成裝置40係以非常低風量之方式來形成上升氣流UF。本來游離產生物就是比重極低的粉體或氣體等,即使設定為非常低風量,游離產生物也可以藉由上升氣流UF而高高地上升。另一方面,框架41係具有少許的間隔而成為和有機EL用遮罩2分開的狀態,有機EL用遮罩2的背面2R成為直接接受上升氣流UF的狀態。有機EL用遮罩2為極薄且大型的金屬板,如將上升氣流UF的風量胡亂地設定得太高,有機EL用遮罩2會產生扭曲或變形,有對有機EL用遮罩2造成損傷之虞。由此點而言,上升氣流UF以設定為低風量為佳。The ascending airflow forming device 40 forms the ascending airflow UF in a very low air volume. The free product is a powder or a gas having a very low specific gravity. Even if it is set to a very low air volume, the free product can be raised high by the upward flow rate UF. On the other hand, the frame 41 is separated from the organic EL mask 2 by a slight interval, and the back surface 2R of the organic EL mask 2 is in a state of directly receiving the updraft UF. The organic EL mask 2 is an extremely thin and large metal plate. If the air volume of the updraft UF is set too high, the organic EL mask 2 is distorted or deformed, and the organic EL mask 2 is caused. The flaw of injury. From this point of view, it is preferable that the updraft UF is set to a low air volume.

作為上升氣流UF,至少設定為將朝向有機EL用遮罩2的開口部4落下的游離產生物從開口部4推回之風量。另外,在以輔助游離產生物的上升之方式來使上升氣流UF發揮功能的情形時,設定為更大的風量。此時的風量係依據雷射光源15的雷射之振盪強度來改變,在雷射的振盪強度大的情形時,將上升氣流UF的風量設定得小些,在振盪強度小的情形時,將上升氣流UF的風量設定得大些。但要抑制上升氣流UF成為不對有機EL用遮罩2造成損傷之程度的風量。The updraft UF is set to at least the amount of air that is pushed back from the opening 4 by the free product that has fallen toward the opening 4 of the organic EL mask 2 . In addition, when the updraft UF is functioned to assist the rise of the free product, a larger air volume is set. The air volume at this time is changed according to the oscillation intensity of the laser light of the laser light source 15. When the oscillation intensity of the laser is large, the air volume of the upward airflow UF is set smaller, and when the oscillation intensity is small, The air volume of the updraft UF is set larger. However, it is necessary to suppress the updating current UF from being an amount of air that does not cause damage to the organic EL mask 2.

因此,於進行雷射洗淨時,經常藉由上升氣流形成裝置40從有機EL用遮罩2的背面2R朝向表面2S形成上升氣流,落下的游離產生物不會再度附著於背面2R。另外,藉由上升氣流在雷射洗淨時,經常地形成,上升氣流輔助游離產生物的上升,使游離產生物朝上方高高地飛散。藉此,可以將從有機EL用遮罩2所飛散的游離產生物藉由氣流30確實地去除,能以極高的洗淨度來潔淨有機EL用遮罩2。Therefore, when the laser is cleaned, the ascending air current is often formed from the back surface 2R of the organic EL mask 2 toward the surface 2S by the ascending airflow forming device 40, and the fallen free product does not adhere to the back surface 2R again. In addition, when the rising airflow is washed by the laser, it is often formed, and the ascending airflow assists the rise of the free product, and the free product is scattered upward upward. As a result, the free-generating material scattered from the organic EL mask 2 can be reliably removed by the air current 30, and the organic EL mask 2 can be cleaned with an extremely high degree of cleanliness.

接著,利用第12圖來說明變形例5。藉由使用有機EL用遮罩潔淨裝置來進行雷射洗淨,幾乎完全地被潔淨,且如形成上升氣流UF,可以使潔淨度更為完全。但即使是如此,也有極為微少的游離產生物21未被去除而再度附著於有機EL用遮罩2。另外,於有機EL用遮罩2的開口部4形成有上升氣流UF,即使游離產生物附著,並非附著於背面2R而是附著於表面2S。第12圖之電漿洗淨裝置50,係考慮藉由使用有機EL用遮罩潔淨裝置之潔淨下,附著有少許之游離產生物的情形時,再度潔淨有機EL用遮罩2的表面2S所設置者。因此,電漿洗淨裝置50係被配置於將藉由有機EL用遮罩潔淨裝置之潔淨結束後的有機EL用遮罩2予以潔淨之位置,即有機EL用遮罩潔淨裝置之後段側(下游側)。Next, a modification 5 will be described using FIG. Laser cleaning by using a mask cleaning device for organic EL is almost completely cleaned, and if the updraft UF is formed, the cleanliness can be made more complete. However, even in this case, the extremely small free product 21 is not removed and adheres again to the mask 2 for organic EL. In addition, the upward flow UF is formed in the opening 4 of the organic EL mask 2, and even if the free product adheres, it adheres to the surface 2S instead of adhering to the back surface 2R. In the case of the plasma cleaning apparatus 50 of Fig. 12, it is considered that the surface of the organic EL mask 2 is cleaned again when a small amount of free products are adhered by the cleaning of the organic EL mask cleaning device. Setter. Therefore, the plasma cleaning device 50 is disposed at a position where the organic EL mask 2 is cleaned by the cleaning of the organic EL mask cleaning device, that is, the rear side of the organic EL mask cleaning device ( Downstream side).

電漿洗淨裝置50係具備:腔體51與上部電極52及下部電極53而構成,與其他的有機EL用遮罩潔淨裝置被賦予相同符號的構成,則與前述者並無不同。腔體51係於其上部設置上部電極52。另外,於基座11設置空氣噴出孔43。在電漿洗淨裝置50中,為了對有機EL用遮罩2進行電漿洗淨,藉由任意的氣體供給手段(未圖示出)將電漿反應性氣體(例如,氬等之惰性氣體)供給至上部電極52與下部電極53之間(第12圖中,上部電極52之正下方)。然後,藉由對下部電極53施加高頻電壓,電漿反應性氣體電漿化而產生電漿34。藉由將此電漿34照射於有機EL用遮罩2,有機EL用遮罩2的表面之游離產生物21被去除而被洗淨。The plasma cleaning device 50 includes the cavity 51, the upper electrode 52, and the lower electrode 53, and the other organic EL mask cleaning device is provided with the same reference numerals, and is not different from the above. The cavity 51 is provided with an upper electrode 52 on its upper portion. Further, an air ejection hole 43 is provided in the base 11. In the plasma cleaning device 50, in order to plasma-clean the organic EL mask 2, a plasma reactive gas (for example, an inert gas such as argon) is used by any gas supply means (not shown). It is supplied between the upper electrode 52 and the lower electrode 53 (in FIG. 12, directly below the upper electrode 52). Then, by applying a high frequency voltage to the lower electrode 53, the plasma reactive gas is plasmatized to generate a plasma 34. By irradiating the plasma 34 to the organic EL mask 2, the free product 21 on the surface of the organic EL mask 2 is removed and washed.

少量附著於有機EL用遮罩2之游離產生物21,藉由電漿34幾乎燃燒(灰化)而氣體化,一部份成為燃燒氣體而從有機EL用遮罩2游離。游離之燃燒氣體朝有機EL用遮罩2落下,有從開口部4捲入有機EL用遮罩2的背面2R之虞。A small amount of the free product 21 adhering to the mask 2 for organic EL is gasified by almost burning (ashing) the plasma 34, and a part of it becomes a combustion gas and is released from the mask 2 for organic EL. The free combustion gas falls into the organic EL mask 2, and is wound around the back surface 2R of the organic EL mask 2 from the opening 4.

因此,於有機EL用遮罩2的下部設置上升氣流形成裝置40,從有機EL用遮罩2的背面2R朝向表面2S形成上升氣流UF。藉此,上升氣流UF將落下開口部4之燃燒氣體推回,不使燃燒氣體捲入背面2R。而且燃燒氣體藉由上升氣流UF而上升,藉由氣流30被搬運而被去除。因此,燃燒氣體不會附著於有機EL用遮罩2的表面2S,可以獲得幾乎完全之潔淨度。Therefore, the updraft forming device 40 is provided in the lower portion of the organic EL mask 2, and the ascending airflow UF is formed from the back surface 2R of the organic EL mask 2 toward the surface 2S. Thereby, the updraft UF pushes back the combustion gas that has fallen into the opening 4, and does not cause the combustion gas to be caught in the back surface 2R. Moreover, the combustion gas rises by the ascending airflow UF, and is removed by the airflow 30 being carried. Therefore, the combustion gas does not adhere to the surface 2S of the organic EL mask 2, and almost complete cleanliness can be obtained.

藉由以上,組合有機EL用遮罩潔淨裝置與電漿洗淨裝置50做成有機EL用遮罩潔淨裝置,可以發揮更高的洗淨效果。另外,雖然針對電漿洗淨裝置50與有機EL用遮罩潔淨裝置具備有上升氣流形成裝置40之例子做說明,但上升氣流形成裝置40也可以設置於2個裝置之任何一方,也可以設置於2個裝置,也可以都不設置於任何裝置。By combining the organic EL mask cleaning device and the plasma cleaning device 50 as a mask cleaning device for organic EL, a higher cleaning effect can be exhibited. Further, although the plasma cleaning device 50 and the organic EL mask cleaning device are provided with the ascending airflow forming device 40, the ascending airflow forming device 40 may be provided in either of the two devices, or may be provided. It is also possible to set neither of the two devices to any device.

於雷射潔淨中,飛散之游離產生物21藉由氣流30而被搬運去除,於電漿洗淨中,燃燒氣體藉由氣流30被搬運去除。因此,即使不形成上升氣流UF,也可以獲得高洗淨效果,但藉由於2個裝置之各個具備上升氣流形成裝置40,可以防止對有機EL用遮罩2之背面2R的捲入,得以獲得更高的洗淨效果。In the laser cleaning, the scattered free product 21 is removed by the airflow 30, and in the plasma cleaning, the combustion gas is removed by the airflow 30. Therefore, even if the ascending airflow UF is not formed, a high cleaning effect can be obtained. However, since each of the two devices is provided with the ascending airflow forming device 40, it is possible to prevent the entrapment of the back surface 2R of the organic EL mask 2, thereby obtaining Higher washing effect.

另外,於第12圖之例子中,上升氣流形成裝置40係做成藉由從多數排列於框架41的上面之空氣噴出孔43所噴出的氣流來形成上升氣流UF,但並不限定於此,也可以藉由其他的手段。例如藉由使有機EL用遮罩的背面2R側下部成為正壓狀態,使表面2S側上部成為負壓狀態,落下的游離產生物不會捲入有機EL用遮罩2的背面2R側。Further, in the example of Fig. 12, the updraft forming device 40 is configured to form the ascending airflow UF by the airflow ejected from the air ejecting holes 43 arranged in the upper surface of the frame 41, but is not limited thereto. It can also be done by other means. For example, when the lower portion on the back surface 2R side of the organic EL mask is in a positive pressure state, the upper portion on the surface 2S side is in a negative pressure state, and the fallen free product does not get caught on the back surface 2R side of the organic EL mask 2 .

1...潔淨裝置1. . . Clean device

2...有機EL用遮罩2. . . Organic EL mask

11...基座11. . . Pedestal

12...搭載工作台12. . . Equipped with workbench

13...夾頭部13. . . Clip head

14...移動部14. . . Mobile department

15...雷射光源15. . . Laser source

16...電流鏡16. . . Current mirror

17...送風部17. . . Air supply department

18...吸引部18. . . Attraction

20...蒸鍍物質20. . . Evaporating substance

21...游離產生物twenty one. . . Free product

30...氣流30. . . airflow

40...上升氣流形成裝置40. . . Updraft forming device

第1圖係表示潔淨裝置之概略構成的斜視圖。Fig. 1 is a perspective view showing a schematic configuration of a cleaning device.

第2圖係表示潔淨裝置之概略構成的剖面圖。Fig. 2 is a cross-sectional view showing a schematic configuration of a cleaning device.

第3圖係有機EL用遮罩的平面圖。Fig. 3 is a plan view of a mask for an organic EL.

第4圖係有機EL用遮罩的剖面圖及放大圖。Fig. 4 is a cross-sectional view and an enlarged view of a mask for an organic EL.

第5圖係說明氣流捕捉灰塵的狀態圖。Figure 5 is a diagram showing the state of the airflow capturing dust.

第6圖係表示變形例1之潔淨裝置之概略構成的斜視圖。Fig. 6 is a perspective view showing a schematic configuration of a cleaning device of Modification 1.

第7圖係表示變形例2之潔淨裝置之概略構成的斜視圖。Fig. 7 is a perspective view showing a schematic configuration of a cleaning device of a second modification.

第8圖係表示變形例3之潔淨裝置之概略構成的斜視圖。Fig. 8 is a perspective view showing a schematic configuration of a cleaning device according to a third modification.

第9圖係表示變形例4之潔淨裝置之概略構成的剖面圖。Fig. 9 is a cross-sectional view showing a schematic configuration of a cleaning device of a fourth modification.

第10圖係上升氣流形成裝置的斜視圖。Figure 10 is a perspective view of the ascending airflow forming device.

第11圖係說明於有機EL用遮罩形成上升氣流的狀態圖。Fig. 11 is a view showing a state in which an ascending air current is formed in a mask for an organic EL.

第12圖係表示變形例5之電漿洗淨裝置之概略構成的剖面圖。Fig. 12 is a cross-sectional view showing a schematic configuration of a plasma cleaning apparatus according to a fifth modification.

1...潔淨裝置1. . . Clean device

2...有機EL用遮罩2. . . Organic EL mask

11...基座11. . . Pedestal

12...搭載工作台12. . . Equipped with workbench

13...夾頭部13. . . Clip head

14...移動部14. . . Mobile department

15...雷射光源15. . . Laser source

16...電流鏡16. . . Current mirror

17...送風部17. . . Air supply department

18...吸引部18. . . Attraction

20...蒸鍍物質20. . . Evaporating substance

Claims (8)

一種有機EL(Electro Luminescence:電激發光)用遮罩潔淨裝置,為用以去除附著於有機EL用遮罩的蒸鍍物質之有機EL用遮罩潔淨裝置,其特徵為具備有:對前述有機EL用遮罩的表面照射雷射光,以使前述蒸鍍物質粉碎產生的游離產生物朝上方飛散之雷射手段;及氣流形成手段,用於形成搬運已飛散的前述游離產生物而予以去除之氣流;前述氣流,係形成於從前述有機EL用遮罩的表面分開的位置之層流狀態的氣流,且具有沿著前述有機EL用遮罩的表面之流動。 A mask cleaning apparatus for organic EL (Electro Luminescence), which is an organic EL mask cleaning apparatus for removing a vapor deposition material adhering to a mask for an organic EL, and is characterized in that: a laser device in which the EL irradiates the laser beam with the surface of the mask to cause the free product generated by the pulverization of the vapor deposition material to scatter upward; and the air flow forming means for forming and removing the scattered product which has been scattered and removed The air flow is a flow in a laminar flow formed at a position separated from the surface of the organic EL mask, and has a flow along a surface of the organic EL mask. 如申請專利範圍第1項所記載之有機EL用遮罩潔淨裝置,其中具備有:使前述雷射光掃瞄前述有機EL用遮罩的表面之雷射掃瞄手段。 The mask cleaning apparatus for an organic EL according to the first aspect of the invention, comprising: a laser scanning means for scanning the surface of the organic EL mask by the laser light. 如申請專利範圍第1項所記載之有機EL用遮罩潔淨裝置,其中具備有:使前述有機EL用遮罩與前述雷射手段相對地移動用之相對移動手段。 The mask cleaning apparatus for an organic EL according to the first aspect of the invention, wherein the mask for cleaning the organic EL is moved relative to the laser device. 如申請專利範圍第2或3項所記載之有機EL用遮罩潔淨裝置,其中,為了對前述有機EL用遮罩的不同區域分別照射雷射光,具備有複數個前述雷射手段。 The mask cleaning apparatus for organic EL according to the second aspect of the invention, wherein the laser beam is irradiated to different regions of the organic EL mask, and a plurality of the laser devices are provided. 如申請專利範圍第1項所記載之有機EL用遮罩潔淨裝置,其中前述氣流形成手段,係具備:於從前述有機EL用遮罩只分開為了形成層流狀態的前述氣流所必要的 間隔之位置所設置的吸引手段。 The mask cleaning apparatus for an organic EL according to the first aspect of the invention, wherein the airflow forming means is provided to separate only the airflow from the organic EL mask to form a laminar flow state. The attraction means set at the position of the interval. 如申請專利範圍第5項所記載之有機EL用遮罩潔淨裝置,其中前述氣流形成手段,係具備:朝向前述吸引手段送風之送風手段。 The mask cleaning apparatus for an organic EL according to the fifth aspect of the invention, wherein the airflow forming means includes a blowing means for blowing air toward the suction means. 一種有機EL顯示器之製造裝置,其特徵為:使用藉由申請專利範圍第1、2、3、4、5、或6項所記載之有機EL用遮罩潔淨裝置而被潔淨的有機EL用遮罩,來製造有機EL顯示器。 An apparatus for manufacturing an organic EL display, which is characterized in that an organic EL mask which is cleaned by a mask cleaning apparatus for organic EL described in the first, second, third, fourth, fifth or sixth aspect of the patent application is used. A cover to manufacture an organic EL display. 一種有機EL用遮罩潔淨方法,為用以去除附著於有機EL用遮罩的蒸鍍物質之有機EL用遮罩潔淨方法,其特徵為:對前述有機EL用遮罩的表面照射雷射光,使前述蒸鍍物質粉碎所產生的游離產生物朝上方飛散,藉由空氣之氣流將已飛散的前述游離產生物予以去除;前述氣流,係形成於從前述有機EL用遮罩的表面分開的位置之層流狀態的氣流,且具有沿著前述EL用遮罩的表面之流動。 A mask cleaning method for an organic EL, which is a mask cleaning method for an organic EL for removing a vapor deposition material adhering to a mask for an organic EL, characterized in that the surface of the organic EL mask is irradiated with laser light. The free product generated by the pulverization of the vapor deposition material is scattered upward, and the scattered free product is removed by the air flow; the air flow is formed at a position separated from the surface of the organic EL mask. The flow in the laminar flow state and having a flow along the surface of the aforementioned EL mask.
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