CN101226337A - Device and method for removing impurity on mask covered by protective membrane - Google Patents
Device and method for removing impurity on mask covered by protective membrane Download PDFInfo
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- CN101226337A CN101226337A CNA2007100022710A CN200710002271A CN101226337A CN 101226337 A CN101226337 A CN 101226337A CN A2007100022710 A CNA2007100022710 A CN A2007100022710A CN 200710002271 A CN200710002271 A CN 200710002271A CN 101226337 A CN101226337 A CN 101226337A
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Abstract
The invention relates to a device for removing the foreign material on the mask covered by protective film and a relative method, wherein the device comprises a laser supply, a lens group and a platform. The platform is distanced from the lens group to contain and arrange a mask with a protective film. The laser of the laser supply via the lens group is projected on the platform to penetrate the protective film and remove the foreign materials on the mask. The best embodiment of the inventive method comprises providing a laser supply and a platform, arranging a mask with a projective film on the platform, projecting the laser of the laser supply on the platform and penetrating the projective film, removing the foreign materials on the mask. The invention has the advantages that the invention can clean the foreign materials on mask without detaching film.
Description
Technical field
The present invention relates to a kind of device and method of removing the impurity on the mask, particularly a kind of device and method of removing the impurity on the mask that is covered by film.
Background technology
In the manufacture process of known mask; after a base material forms pattern via etching; just become available mask; form the mask of pattern if in figure, produce defective; then must repair pattern through mask laser trimmer (photomask laser repair machine); then through cleaning and covering a film (pellicle) on the mask, avoid the impaired or foreign matter of pattern to be attached on the mask and influence the result of exposure imaging with the pattern on the protection mask.After mask has been covered by film, can carry out a fault detection to mask, whether to have impurity or foreign matter in the check mask, if measure the foreign matter that existence can influence exposure imaging, then must remove film (film dismounting back just can't be used once again), by the mask laser trimmer repairing is done in the damage that is produced in the cleaning process, again clean mask, and then cover a new film, and just can dispatch from the factory afterwards, such process is not only consuming time, can increase the consumption of film simultaneously, because film is quite expensive, also can increase cost thus, therefore wishes to develop a kind of film of needn't dismantling and also can remove the impurity on the mask or the method for foreign matter.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of film of needn't dismantling also can remove the impurity on the mask or the device and method of foreign matter.
A preferred embodiment of removing the device that is positioned at the impurity on the mask that is covered by cuticula of the present invention comprises a LASER Light Source, a lens combination and a platform.Platform and lens combination keep a suitable distance, and for holding and placing the mask with cuticula.The laser that sends from this LASER Light Source is projected on the platform through lens combination, and the laser that is projected to platform passes cuticula and removes the impurity that is positioned on the mask.
Device in the above-mentioned preferred embodiment also comprises an observation element that is used to observe mask graph, this observation element can be a photo-coupler, the observation element can be by passing the mercury light source of this mask, or from the mercury light source of this mask reflection, observe the impurity that is positioned on this mask.
In above-mentioned preferred embodiment, LASER Light Source can be pulse laser (pulse laser) or continuous light wave laser (continuous wave laser).
In above-mentioned preferred embodiment, lens combination comprises a plurality of lens, and the enlargement ratio of described lens is all inequality, laser by a lens projects in the described lens to platform.
A preferred embodiment of removing the method that is positioned at the impurity on the mask that is covered by cuticula of the present invention comprises the following steps: to provide a LASER Light Source and a platform; The mask that will have cuticula is positioned on this platform; And make laser be projected to this platform from this LASER Light Source, and pass this cuticula, thus remove the impurity that is positioned on this mask.
Method in the above-mentioned preferred embodiment also comprises the following steps: to provide a lens combination, and this lens combination has a plurality of lens, and described lens have different enlargement ratios; According to the size of this impurity, make this laser by a lens projects in the described lens to this platform.
Method in the above-mentioned preferred embodiment also comprises the following steps: to provide an observation element; Utilize this observation element to observe this mask.
Method in the above-mentioned preferred embodiment also comprises the following steps: to utilize the light source of any wavelength coverage of passing this mask to observe this mask, in a preferred version, utilizes the mercury light source that passes this mask to observe this mask.
Method in the above-mentioned preferred embodiment also comprises the following steps: to utilize from the light source of any wavelength coverage of this mask reflection observes this mask, in a preferred version, utilizes from the mercury light source of this mask reflection and observes this mask.
Compare with conventional art, the invention has the advantages that: needn't dismantle film and also can remove impurity or foreign matter on the mask.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended accompanying drawing, carry out following detailed description.
Description of drawings
Fig. 1 is the schematic representation of apparatus that is positioned at the impurity on the mask that is covered by cuticula of removing of the present invention.
Fig. 2 represents that laser passes cuticula and hits the mechanism that is positioned at the impurity on the mask.
Fig. 3 is the synoptic diagram of the mask laser trimmer of NEC SL458 type.
Wherein, description of reference numerals is as follows:
3 impurity, 5 cuticula, 7 masks, 10 LASER Light Source
20 bodies, 30 lens combination, 40 platforms, 50 light pipe roads
60 catoptrons, 70 observation elements, 80 gas tips, 90 gas supply pipes
Embodiment
Fig. 1 is the device that is positioned at the impurity on the mask that is covered by cuticula of removing of the present invention, and this device comprises a LASER Light Source 10, body 20, lens combination 30, platform 40, light pipe road 50, catoptron 60 and observation element 70.When on the mask 7 that covers cuticula 5, detecting when having impurity, the mask 7 that is coated with cuticula 5 is positioned on the platform 40, laser is adjusted the scope of irradiation through body 20 and scioptics group 30 from LASER Light Source 10, pass cuticula 5 then and hit the impurity that is positioned on the mask 7, as shown in Figure 2, energy by laser is with impurity 3 burnings or smash into the littler particle of particle diameter, as long as particle grain size influences less than meeting below the critical value of exposure imaging, can reach requirement.Because the exposure region when on mask 7, needing to remove the zone of impurity and all being exposure imaging, therefore laser can penetrate mask 7 and enter in the light pipe road 50 after hitting impurity 3, enter in the observation element 70 via catoptron 60 reflections, can observe the figure after the finishing of mask 7 thus, and whether checked for impurities 3 has been gone out by hitting or has been smashed to the atomic granule of unlikely influence exposure.The form of LASER Light Source 10 can be pulse laser or continuous light wave laser.
Above-mentioned lens combination 30 comprises a plurality of lens, and these lens have different multiplying powers, uses different lens can change the scope of laser radiation, therefore selects to use different lens according to the size of the impurity particle diameter of observing element 70 be observed.In addition, in the present embodiment, observation element 70 uses photo-coupler (CCD), but is not limited thereto, and also can use other observation element.In the present embodiment, observation element 70 is to observe mask graph by the mercury light source that penetrates mask 7, in another embodiment, observation element 70 also can be arranged at the top of platform 40, by observing mask graph from the mercury light source of mask 7 reflections, the difference of these two embodiment is, if observe by the light source that penetrates mask 7, what then the exposure region of mask graph showed is the clear zone, and impurity partly is shown as the dark space; If by observing from the light source of mask 7 reflections, what then the exposure region of mask graph showed is the dark space, and impurity partly is shown as the clear zone.That is the light source of any wavelength coverage that the observation element can be by passing mask is observed the impurity that is positioned on the mask, also can observe the impurity that is positioned on the mask by the light source from any wavelength coverage of this mask reflection.
Because in the manufacture process of mask, the mask laser trimmer is the device with LASER Light Source, therefore also the mask laser trimmer can be repacked into and remove the device that is positioned at the impurity on the mask surface that is covered by cuticula, mask laser trimmer with NEC SL458 type is an example, as shown in Figure 3, except the action module part of irradiating laser, also include on platform 40 and can implement chemical vapor deposited module, this module comprises a gas tip (gas port) 80 and one gas supply pipe (gas tube) 90.Laser can expose to mask 7 from the through hole 82 of gas tip 80, and part unnecessary in the mask pattern is eliminated, and chemical vapor deposited module then can be repaired the defective in the mask pattern.In the mask laser trimmer of NEC SL458 type, because mask is positioned between platform 40 and the gas tip 80, space therebetween is too narrow and small, can't hold the mask 7 that has covered cuticula 5, therefore if will insert the mask 7 that has covered cuticula 5, chemical vapor deposited module (comprising gas tip 80 and gas supply pipe 90) must be removed, make between platform 40 and the lens combination 30 and have enough spaces, holding the mask 7 that covers cuticula 5, and reset laser controlling parameter in the body 20.
The present invention is for the form and the indefinite of mask and cuticula, and the mask of any form and cuticula all can use.The form of impurity comprises organism and inorganics, or the residue of the material of mask surface figure (as chromium (Chrome), MoSiNOx) or chip etc.Organism can be removed by the energy burning of laser, and the residue of the material of inorganics or mask surface figure or chip then can be crashed to pieces into the littler superfine microparticle of particle diameter by the energy of laser.
Though disclose the present invention with preferred embodiment above; but it is not in order to limit the present invention; those skilled in the art can carry out various changes and modification in not breaking away from design of the present invention and scope, so protection scope of the present invention is limited by the claimed scope of claims.
Claims (12)
1. remove the device that is positioned at the impurity on the mask that is covered by cuticula for one kind, comprising:
One LASER Light Source;
One lens combination; And
One platform, itself and this lens combination keeps a suitable distance, and for holding and placing the mask with cuticula, wherein the laser that sends from this LASER Light Source is projected on this platform through this lens combination, and the laser that is projected to this platform passes this cuticula and removes the impurity that is positioned on this mask.
2. the device that is positioned at the impurity on the mask that is covered by cuticula of removing as claimed in claim 1, wherein, this device also comprises an observation element that is used to observe this mask.
3. the device that is positioned at the impurity on the mask that is covered by cuticula of removing as claimed in claim 2, wherein, this observation element is a photo-coupler.
4. the device that is positioned at the impurity on the mask that is covered by cuticula of removing as claimed in claim 2, wherein, the light source of any wavelength coverage of this observation element by passing this mask is observed the impurity that is positioned on this mask.
5. the device that is positioned at the impurity on the mask that is covered by cuticula of removing as claimed in claim 2, wherein, this observation element is observed the impurity that is positioned on this mask by the light source from any wavelength coverage of this mask reflection.
6. the device that is positioned at the impurity on the mask that is covered by cuticula of removing as claimed in claim 1, wherein, this LASER Light Source is pulse laser or continuous light wave laser.
7. the device that is positioned at the impurity on the mask that is covered by cuticula of removing as claimed in claim 1, wherein, this lens combination comprises a plurality of lens, the enlargement ratio of described lens is all inequality, laser by a lens projects in the described lens to this platform.
8. remove the method that is positioned at the impurity on the mask that is covered by cuticula for one kind, this method comprises the following steps:
One LASER Light Source and a platform are provided;
The mask that will have cuticula is positioned on this platform; And
Make laser be projected to this platform, and pass this cuticula, thereby remove the impurity that is positioned on this mask from this LASER Light Source.
9. the method that is positioned at the impurity on the mask that is covered by cuticula of removing as claimed in claim 8, wherein, this method also comprises the following steps:
One lens combination is provided, and this lens combination has a plurality of lens, and described lens have different enlargement ratios;
According to the energy size of the adjusted size laser of this impurity, make laser by a lens projects in the described lens to this platform.
10. the method that is positioned at the impurity on the mask that is covered by cuticula of removing as claimed in claim 9, wherein, this method also comprises the following steps:
One observation element is provided;
Utilize this observation element to observe this mask.
11. the method that is positioned at the impurity on the mask that is covered by cuticula of removing as claimed in claim 10, wherein, this method also comprises the following steps:
Utilization is passed the light source of any wavelength coverage of this mask and is observed this mask.
12. the method that is positioned at the impurity on the mask that is covered by cuticula of removing as claimed in claim 10, wherein, this method also comprises the following steps:
Utilization is observed this mask from the light source of any wavelength coverage of this mask reflection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100022710A CN101226337A (en) | 2007-01-17 | 2007-01-17 | Device and method for removing impurity on mask covered by protective membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007100022710A CN101226337A (en) | 2007-01-17 | 2007-01-17 | Device and method for removing impurity on mask covered by protective membrane |
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| CN101226337A true CN101226337A (en) | 2008-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2007100022710A Pending CN101226337A (en) | 2007-01-17 | 2007-01-17 | Device and method for removing impurity on mask covered by protective membrane |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101834118A (en) * | 2009-03-09 | 2010-09-15 | 株式会社日立高新技术 | Cleaning apparatus and cleaning method of mask member, and organic EL display |
| CN102034937A (en) * | 2009-09-28 | 2011-04-27 | 株式会社日立高新技术 | Method and device for cleaning mask for organic EL and device for manufacturing organic EL display |
| CN102236248A (en) * | 2010-04-20 | 2011-11-09 | 株式会社Cowindst | Method and system for repairing half-tone mask |
| CN102650031A (en) * | 2012-04-19 | 2012-08-29 | 彩虹（佛山）平板显示有限公司 | Method for removing organic matters attached onto surface of MASK |
| CN103394490A (en) * | 2008-09-17 | 2013-11-20 | 株式会社日立高新技术 | Device and method for cleaning organic electro luminescence (EL) mask |
| CN101788770B (en) * | 2009-01-26 | 2014-05-14 | 台湾积体电路制造股份有限公司 | Method and apparatus for assembling pellicle on optical mask and its assembly |
| CN107209451A (en) * | 2015-02-03 | 2017-09-26 | Asml荷兰有限公司 | Mask assembly and associated method |
| WO2019024091A1 (en) * | 2017-08-04 | 2019-02-07 | 深圳市柔宇科技有限公司 | Laser repairing method and device |
| TWI673566B (en) * | 2018-02-13 | 2019-10-01 | 特銓股份有限公司 | Photomask cleaning device and reticle cleaning method |
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2007
- 2007-01-17 CN CNA2007100022710A patent/CN101226337A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103394490A (en) * | 2008-09-17 | 2013-11-20 | 株式会社日立高新技术 | Device and method for cleaning organic electro luminescence (EL) mask |
| CN101788770B (en) * | 2009-01-26 | 2014-05-14 | 台湾积体电路制造股份有限公司 | Method and apparatus for assembling pellicle on optical mask and its assembly |
| CN101834118A (en) * | 2009-03-09 | 2010-09-15 | 株式会社日立高新技术 | Cleaning apparatus and cleaning method of mask member, and organic EL display |
| CN101834118B (en) * | 2009-03-09 | 2012-12-26 | 株式会社日立高新技术 | Cleaning apparatus and cleaning method of mask member, and organic EL display |
| CN102034937A (en) * | 2009-09-28 | 2011-04-27 | 株式会社日立高新技术 | Method and device for cleaning mask for organic EL and device for manufacturing organic EL display |
| CN102236248A (en) * | 2010-04-20 | 2011-11-09 | 株式会社Cowindst | Method and system for repairing half-tone mask |
| CN102650031A (en) * | 2012-04-19 | 2012-08-29 | 彩虹（佛山）平板显示有限公司 | Method for removing organic matters attached onto surface of MASK |
| CN107209451A (en) * | 2015-02-03 | 2017-09-26 | Asml荷兰有限公司 | Mask assembly and associated method |
| US11029595B2 (en) | 2015-02-03 | 2021-06-08 | Asml Netherlands B.V. | Mask assembly and associated methods |
| US11086213B2 (en) | 2015-02-03 | 2021-08-10 | Asml Netherlands B.V. | Mask assembly and associated methods |
| US11635681B2 (en) | 2015-02-03 | 2023-04-25 | Asml Netherlands B.V. | Mask assembly and associated methods |
| WO2019024091A1 (en) * | 2017-08-04 | 2019-02-07 | 深圳市柔宇科技有限公司 | Laser repairing method and device |
| TWI673566B (en) * | 2018-02-13 | 2019-10-01 | 特銓股份有限公司 | Photomask cleaning device and reticle cleaning method |
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Open date: 20080723 |