CN102236248A - Method and system for repairing half-tone mask - Google Patents
Method and system for repairing half-tone mask Download PDFInfo
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- CN102236248A CN102236248A CN 201010153020 CN201010153020A CN102236248A CN 102236248 A CN102236248 A CN 102236248A CN 201010153020 CN201010153020 CN 201010153020 CN 201010153020 A CN201010153020 A CN 201010153020A CN 102236248 A CN102236248 A CN 102236248A
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Abstract
The content of the invention relates to a method for repairing a half-tone mask and a system for repairing a half-tone mask. In the invention, the even transmittance of the repairing part can be ensured by executing a repairing procedure, and a function of removing defects also can be provided even if a surface film is formed. The repairing procedure comprises the following steps of: removing the defects in a half-tone mask by using laser beams; effectively forming a blocking film on the defect region; adjusting the thickness of the blocking film; and adjusting the transmittance real time.
Description
Technical field
The present invention relates to a kind of method that is used for the defect area or the thin film transistor base plate in the Thin Film Transistor-LCD (TFT-LCD) of repairing semiconductor.More specifically, the present invention relates to a kind of method and system that is used to repair half-tone mask, it can guarantee to repair the uniform transmitance at part place by a repair process, even and if after the top layer film forms, also can provide and remove this function of defective from mask, described repair process comprises: use laser beam to remove defective from half-tone mask; On defect area, form barrier film effectively; Regulate the thickness of barrier film; And regulate transmitance in real time.
Background technology
LCD TFT and color filter have a large amount of layers, and these are a large amount of is deposited upon over each other and each all passes through a photoetching process and forms pattern.Form because single layer is the one-period by photoetching process,, then can aspect processing cost, obtain very big effect if can reduce the time in each cycle of photoetching process so.Yet, because traditional photomask is configured to only allow pattern of realization in a layer, so be uneconomic.
In order to solve this problem of traditional photomask, slit mask, gray mask, half-tone mask and analog have been developed.
Slit mask has utilized scattering of light.Also promptly, slit mask has utilized the character of light scattering, according to the character of light scattering, passes than certain value---this value can guarantee down much to be applied to the linearity of the wavelength of slit---the light generation energy dispersion in thinner slit.Yet, for slit mask, owing to pass the only uneven distribution of fine gap scattering, and therefore exposure energy changes according to the position, obtains homogeneous thickness so be difficult on the last film---because on last film, produce unevenly because of the difference of position.
Gray mask has a light that allows the complete transmission of light to pass light transmission department wherein, a photoresistance stopper that stops light fully and a permission reduction when rayed and passes wherein gray tone layer.Because gray mask uses the diffraction of light that passes fine pattern to regulate the optical transmission amount, therefore be difficult in and obtain uniform pattern under the following situation: the situation and the gray mask that surpass preliminary dimension in the zone of gray tone pattern have under predetermined size or the larger sized situation.
Half-tone mask comprises: a light transmission department, and it forms on transparent substrate; A photoresistance stopper, it stops light fully; And a shadow tone portion, it regulates optical transmission to allow the transmission of light part.Half-tone mask can be defined as a mask that is formed with shadow tone portion on it.
Half-tone mask allows light to pass shadow tone portion equably, and therefore helps forming final uniform film.
Half-tone mask allows the mask forming process to simplify, but needs the process that this mask is produced in extra being used to, and has increased the quantity of the process of production mask thus.
Also promptly, form a defective during making in mask when---for example pin hole or analog---, the reply mask is repaired before using this mask so.When the defective in the shadow tone portion that is formed at mask is repaired, be necessary to keep the thickness evenness of gained film---by regulating the transmitance of light, make the defect area that the light that is suitable for allowing same level (referring to identical with the level of the light of the area free from defect that is adjacent to defect area of passing shadow tone portion) passes shadow tone portion.
When forming a defective in the shadow tone portion of half-tone mask when---for example pin hole---, pass other zones that wherein transmission light quantity becomes different in shadow tone portion, cause exposure energy to change thus and---under the situation of using photoresist or organic electrolysis plasma membrane---make that generation is uneven on the surface of gained film, thereby be difficult to obtain uniform film thickness because of the difference of position.So, when on film, forming a step, owing to open a part outside the expectation in aftertreatment during---for example drying, etching, ashing etc.---, and the part outside this expectation become a defective, so be necessary to repair the defect area of shadow tone portion.
Traditionally, for the defect area of balance shadow tone portion and the transmitance between the area free from defect adjacent thereto, repair process is carried out by following operation: defect area is removed by portion from shadow tone, then deposits on the regional area of shadow tone portion.
Yet, in deposition process,, cause the restoring area of shadow tone portion and the transmitance between the adjacent domain variant thus, thereby caused the problem that the step of deposited film is broadened because it is very difficult to regulate the transmitance at regional area place.Open the part outside the expectation during the step of widening of sedimentary deposit is at last handling process---for example drying, etching, ashing etc.---, still can in mask, cause defective thus.Specifically, the variation of transmitance increases with deposition conditions, make be very difficult to guarantee restoring area has and with the transmitance of its adjacent domain par.
Summary of the invention
The present invention is in order to solve the problems referred to above of correlation technique, and a target of the present invention provides a kind of method and system that is used to repair half-tone mask, it can guarantee to repair part transmitance uniformly by carrying out a repair process, and can provide and remove this function of defective (even if after the top layer film forms) from half-tone mask, described repair process comprises: use laser beam to remove defective from half-tone mask; On defect area, form barrier film effectively; Regulate the thickness of barrier film; And regulate transmitance in real time.
According to an aspect of the present invention, provide a kind of half-tone mask restorative procedure, it repairs the defect part of the shadow tone portion on the half-tone mask by depositing these starting material to the starting material illuminating laser beam on defect part with this.
This method can comprise: defect part is removed by portion from shadow tone; And on that part of removing defect part of shadow tone portion deposition shadow tone film.
Can be comprised at least a among Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N and the C by laser radiation with the starting material of deposition shadow tone film.
The shadow tone film that uses starting material to deposit can be by being selected from Mo
xO
y, Mo+Si, Mo+Si
xN
y, Mo+SiO
2, W
xO
y, W+Si, W+Si
xN
y, W+SiO
2, Cr, Cr+W+SiO
2, Cr+W+Si
xN
y, Cr
xO
y, Cr+Si, Cr+Si
xN
y, Cr+SiO
2, Cr+Mo+Si
xN
y, Cr+Mo+SiO
2, Cr+Mo+W+Si
xN
yAnd Cr+Mo+W+SiO
2A kind of material form.Use said composition, even the shadow tone film still keeps firm attachment after cleaning.In addition, when using this raw-material, the deposition on the defect part can be included in deposition Mo or W on the defect part, and deposits Si, SiO again on this film that is deposited as
2And Si
xN
yIn one of them.
Removing defect part from shadow tone portion can comprise: remove defect part according to a pattern with the pattern match of defect part, with enhancement process efficient.
Using laser beam to remove defect part can comprise: use and correct so as to the optical adjacent of the size of the round-shaped edge of compensation laser beam that (optical proximity correction, OPC) mask is removed defect part.
Removing of defect part can comprise: edge locked is carried out in the source with respect to laser beam, to prevent to remove the zero defect part of shadow tone portion.
This method also can comprise: by measure the transmitance that transmitance is regulated the shadow tone film after using starting material deposition shadow tone film.The adjusting of transmitance can repeat, up to transmitance satisfy pre-conditioned till, improve treatment effeciency thus.The adjusting of transmitance can be carried out in the scope of 0.01-10%.
Remove and the shadow tone depositing of thin film of defect part all can use the laser beam with the wavelength that is less than or equal to 400nm to carry out.
The shadow tone depositing of thin film can use the laser beam of the pulse recurrence rate with 1Hz-10kHz to carry out.
In the shadow tone depositing of thin film, can use the carrying gas of 50-500sccm flux to come accommodating source material.
Starting material can provide under 20-80 ℃ temperature, to reduce raw-material evaporating pressure.
A kind of repair system of half-tone mask is provided according to a further aspect in the invention.
This system can comprise: a chamber, and it is used for depositing of thin film; A starting material generation/feeding unit, its with raw material supply to the chamber; And an optical system, its use laser beam with the starting material ionization with deposition shadow tone film on the defect part of the half-tone mask in the chamber.
This optical system can comprise a lasing light emitter and a laser head unit.
This lasing light emitter can be launched the laser beam with the wavelength that is less than or equal to 400nm, maybe can launch the laser beam of the pulse recurrence rate with 1Hz-10kHz.
Starting material generation/feeding unit can comprise: a starting material generating unit, and it is configured to accommodating source material effectively, and storage waits to be supplied to the starting material in the chamber, and the starting material distillation is mixed with carrying gas with the starting material with distillation; And a temperature control unit, it will carry gas or starting material maintain its sublimation temperature or higher temperature.
This system can comprise a plurality of starting material generating units, in order to supply two or more starting material simultaneously.
Temperature control unit can comprise: a well heater, its heating raw materials; A temperature sensor, it detects the temperature of well heater; And a temperature controller, the temperature that it comes control heater based on the temperature that temperature sensor detects.
Starting material generation/feeding unit can be connected at least one carrying gas supply unit, and this carrying gas supply unit supply is transported to carrying gas in the chamber with starting material.
This shadow tone repair system also can comprise: a Purge gas feeding unit, it is supplied to Purge gas in the chamber by a purification pipeline, to purify remaining starting material in the chamber.
This shadow tone repair system also can comprise: a residual gas exhaust unit after its reaction in the chamber, is discharged to the outside with residual gas from the chamber.
The residual gas exhaust unit can comprise: a material gatherer, and it is collection material from the residual gas of discharging in the chamber; A thermal treatment portion, it separates the material that does not separate from residual gas by the material gatherer by thermal treatment; A filtrator, its emission gases that will pass material gatherer and thermal treatment portion is filtered; A pump, the emission gases of filtrator is passed in its suction; And blowdown presssure/flow controller of regulating pump pressure.
Starting material can comprise at least a among Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N and the C.
The shadow tone film can be by being selected from Mo
xO
y, Mo+Si, Mo+Si
xN
y, Mo+SiO
2, W
xO
y, W+Si, W+Si
xN
y, W+SiO
2, Cr, Cr+W+SiO
2, Cr+W+Si
xN
y, Cr
xO
y, Cr+Si, Cr+Si
xN
y, Cr+SiO
2, Cr+Mo+Si
xN
y, Cr+Mo+SiO
2, Cr+Mo+W+Si
xN
yAnd Cr+Mo+W+SiO
2A kind of formation.
Description of drawings
Above-mentioned and other targets of the present invention, feature and advantage will become in detailed description with the accompanying drawing obviously, wherein:
Fig. 1 is the process flow diagram according to the process of the reparation half-tone mask of one embodiment of the invention;
Fig. 2 is at the process flow diagram according to the pattern match step in the process of embodiment of the present invention;
Fig. 3 is the process flow diagram that is included in the repair process of the step of accommodating source material in the repair system according to one embodiment of the invention;
Fig. 4 and Fig. 5 are the block schemes of system that is used to carry out repair process according to one embodiment of the invention; And
Fig. 6 and Fig. 7 show the embodiment according to the optical system of a repair system of embodiment of the present invention.
Embodiment
Describe exemplary embodiment of the present invention in detail referring now to accompanying drawing.
Theme of the present invention is to repair the active region of the shadow tone portion that is positioned at half-tone mask or the open defect on the defect part (defective) in the following manner: remove defect part effectively and to starting material---for example metal material---illuminating laser beam is with the zone of removing with the starting material compensation.In other words, be positioned at defect part in the shadow tone portion of half-tone mask by repairing with deposition shadow tone film (barrier film) on defect part to the starting material illuminating laser beam.
Particularly, in order to repair the defect part in the shadow tone portion that is positioned at half-tone mask, defect part is at first specified by the definite exact position of this defect part in shadow tone portion, next: 1) defect part is removed from shadow tone portion; And 2) remove deposition shadow tone film on the zone what the defect part of shadow tone portion had been removed.
Referring to Fig. 1 and Fig. 2, the position of defect part is by determining defect part and definite, and the shadow tone film is deposited over by means of laser beam on the defect part, and measures transmitance, finishes repair process thus.
Particularly, half-tone mask to be repaired is loaded to determine the position (S1) of the defect part on it.Then, defect layer, promptly defect part is removed (S4) from half-tone mask.Next step, a shadow tone film is deposited over removing on the part of half-tone mask, to have the identical transmitance (S5) of other parts of removing part with being adjacent to of shadow tone portion.In this basic process, can carry out pattern match and edge locked to guarantee more effective reparation (S2, S3).In other words, step S2 and S3 can increase or omit as required.
Removing of defect part is to use laser beam to carry out.Particularly, when defect part has the fine size that is less than or equal to 1 μ m, then preferably use the OPC mask, be removed with round-shaped owing to the inherent characteristic of laser beam to prevent film.
Carry out pattern match and be for defect part can be removed with the pattern identical with the pattern that exists in the shadow tone portion---when when defect part is removed by shadow tone portion.The execution of this step is the purpose that realizes remediation efficiency in order to prevent removing of unnecessary part simultaneously.In this step, as shown in Figure 2, the pattern of the defect part of half-tone mask is replicated to obtain the shape of this pattern, makes defective part to remove according to the shape of this pattern, perhaps makes depositing of thin film to realize according to this shape.
Edge locked is such process: the edge coupling of the edge that will have pattern now and the defect part that will remove from half-tone mask, so that in removing the step of defect part, accurately regulate the irradiation area of laser beam.
Then, by measuring the transmitance of deposit film (barrier film), transmitance with reference to the zero defect part of the vicinity of half-tone mask, whether the transmitance of determining deposit film has a suitable setting value, if and the transmitance of determining deposit film do not have suitable value, then repeat above-mentioned steps (S6).The measurement of transmitance is an executed in real time, and when the transmitance of deposit film reached appropriate value, this process was finished (S7).
Next, will describe following process in detail with reference to figure 3: remove defect part (S4) and by ion deposition deposit shadow tone (HT) thus film forms barrier film (S5) removing on the part.
Deposition process based on laser is to use following principle to carry out: by making the laser radiation starting material metallic element in the starting material and the combination between the ligand are interrupted, so that metallic element separates with starting material and is deposited on the target with film shape.
In the present invention, defect part remove and the deposition in half-tone mask is to use laser beam to carry out, and the irradiation of laser beam is to use an optical system that comprises lasing light emitter, laser head unit etc. to carry out.In order from shadow tone portion, to remove defect part, use had the laser beam of characteristic frequency.Owing to when removing the film that stays, do not have thermal phenomenon, therefore preferably use laser beam with short as far as possible wavelength with the pulse width that is less than or equal to 15 psecs (ps).More preferably, use laser beam that does not produce thermal phenomenon or the laser beam of using the fast-pulse repetition rate that does not produce thermal phenomenon with 1Hz-10kHz with 400nm wavelength.Further preferably, can use the laser beam of fast-pulse repetition rate with 1kHz-10kHz.
In the present invention, removing deposition partly consists essentially of: to removing part accommodating source material (T3); And use laser beam removing deposit film (T4) on the part.For a more effective process, can provide Purge gas or blanket gas (T1, T2) as required, and when process was finished, raw-material supply was prevented from (T5) to finish this process (T6).It should be understood that and to carry out this process till determining that by the measurement of the deposition part being located transmitance the transmitance at this deposition part place reaches a suitable value.
Starting material can be made up of metal material.In the case, the expectation starting material have a low evaporating pressure so that starting material can slowly decompose.In addition, this raw-material slow decomposition causes the thickness of barrier film to increase gradually, thereby causes the rising of density.
Therefore, preferably carry gas with the flux supply of 50-500sccm; More preferably, be that 20-80 ℃ of following accommodating source material is to reduce raw-material evaporating pressure in temperature.
When deposition of barrier film when being used for the reparation of shadow tone portion, regulating thickness is in order to regulate the transmitance of barrier film.Expectation be, half-tone mask with the contiguous area free from defect of barrier film 0.5% in or littler this transmitance of value inner control.The parameter that is used for the transmitance adjusting can comprise laser power, temperature, flux, scanning multiplicity etc.It should be understood that can select one or more in these parameters to be used for transmitances regulates.
In the present invention, regulate the thickness of film to be used for the accurate adjusting of transmitance.Be used for traditional restorative procedure of gray mask, because thickness adjusted by transmission or stop that light partly carries out by target, therefore makes the film of repair-deficiency part have preset thickness or bigger thickness so that stop that light is just enough.
On the contrary, the 10-90% in the half-tone mask that manufacturer produces has the thickness that differs from one another, and this depends on determined line/interval width when designing the active region.Therefore, need carry out thickness adjusted.
The present invention has adopted the parameter that is used for thickness adjusted that hereinafter proposes.
At first, the wavelength of adjustable laser beam, energy density, pulse recurrence rate and pulse width.Perhaps, the flux of the raw-material carrying gas of adjustable carrier.For example, the flux of scalable inert gas such as Ar, He etc.
Alternatively, can obtain thickness adjusted in the following manner: use starting material with low evaporating pressure; Regulate raw-material temperature; Regulate the retention time of starting material in the inboard vacuum area of reaction chamber; Regulate the sweep velocity on the deposition region; And the gap size on the adjusting deposition region.
Particularly, in one embodiment, the parameter of scalable relevant raw materials is so that the deposition efficiency maximization.
In one embodiment, starting material can comprise at least a among Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N and the C.For example, the composition such as Cr+Mo, Cr+W, Cr+Mo+W, Cu+Mo, Cu+W, Cu+Mo+W, Mo+Si and W+Si can be used as starting material.
In addition, the shadow tone film of use laser deposition can be by being selected from Mo
xO
y, Mo+Si, Mo+Si
xN
y, Mo+SiO
2, W
xO
y, W+Si, W+Si
xN
y, W+SiO
2, Cr, Cr+W+SiO
2, Cr+W+Si
xN
y, Cr
xO
y, Cr+Si, Cr+Si
xN
y, Cr+SiO
2, Cr+Mo+Si
xN
y, Cr+Mo+SiO
2, Cr+Mo+W+Si
xN
yAnd Cr+Mo+W+SiO
2At least a material form.Particularly, using single component---for example Mo and W---under the situation that is used to deposit, during the cleaning of the single component that is deposited after repairing with divided thin film from.Yet, when using combination starting material for example Mo+Si, Mo+Si
xN
y, Mo+SiO
2, W+Si, W+Si
xN
yAnd W+SiO
2When being used to deposit, the cleaning after the combination starting material that deposited can fully stand to repair, and do not have the problems referred to above of single component, guaranteed post-depositional steady state (SS) thus.
Alternatively, be deposited on the defect part and then Si, SiO as Cr, Mo or W
2, and Si
xN
yOne of them when being deposited on this film that is deposited as, this deposited film has presented the tolerance to cleaning.Particularly, because MoSi presents different transmitances with respect to the Ghi-line with I-line (ultraviolet illumination wavelength), therefore the deposit film that is formed by MoSi has than before deposit film superior characteristic more.
Next, will the system of repair process that is used to carry out half-tone mask according to embodiment of the present invention be described with reference to figure 4 and Fig. 5.
Referring to Fig. 4, this repair system comprises: a carrying gas supply unit 100, and its supply is used to carry the raw-material carrying gas that is used for repairing half-tone mask; A starting material generation/feeding unit 200, it mixes starting material and supplies this potpourri with carrying gas; And an optical system 500, the laser beam that its irradiation is used to repair.In order to improve treatment effeciency, this system also can comprise: a Purge gas feeding unit 300, and its supply Purge gas is to purify the inside in chamber 300; And a blanket gas feeding unit 400, its supply blanket gas is discharged from the chamber to prevent starting material.This system also can comprise a residual gas deliverying unit 700, after its starting material that are used to repair reaction in the chamber, residual gas is discharged to the outside from the chamber.
With reference to figure 5, promptly, will each parts of this system be described in more detail according to the block scheme of the repair system of one embodiment of the invention.
In this system, carrying gas is provided to starting material generating unit 210 by a pipeline and mixes with starting material from carrying gas supply unit 100, starting material and then be provided to chamber 600 and be subjected to irradiation by the laser beam of optical system 500 radiation by a pipeline make by ionization to deposit a barrier film on the defective part of half-tone mask.This process can repeat according to the transmitance of being surveyed.Then, residual gas by residual gas deliverying unit 700 from the chamber 600 be discharged into the outside.
The operation of each parts of this system will be described in detail.
100 supplies of carrying gas supply unit are used to carry raw-material carrying gas, and are connected to the starting material generating unit 210 in the raw-material starting material generation/feeding unit 200 of storage.Then, this carrying gas is provided to starting material generating unit 210 and mixes with starting material from carrying gas supply unit 100, so that starting material are transported in the chamber 600.A pipeline that is connected to carrying gas supply unit 100 is provided with a valve 110 at the one end, and this valve 110 stops the supply of gas as required, and a flow controller 120 is set with the control flux in the rear end of valve 110.
Valve 110,111 preferably is arranged on the front side of flow controller 120 and rear side to prevent the reversed flow of gas.What expect is that this flow controller is set in each Purge gas feeding unit 300 and the blanket gas feeding unit 400, and is as mentioned below.At this, these elements are connected to pipeline, as shown in Figure 5.This pipeline also can comprise other valves and a well heater.
This system can comprise one or more carrying gas supply units 100, and each all is connected to starting material generating unit 210 by pipeline.When three carrying gas supply units when being connected to three starting material generating units respectively, as shown in Figure 5, three kinds or more kinds of starting material can side by side or individually be used in the chamber.
210 storages of starting material generating unit are used for the material of deposit film, and can comprise: a well heater, and it is used for this material is heated to sublimation temperature or higher; A temperature sensor, it is used to detect the temperature by the material of heater heats; And a temperature control unit that comprises the temperature controller (not shown), it is used for based on the temperature of control heater by the temperature of temperature sensor detection.
The carrying gas of carrying gas supply unit supply can be a kind of inert gas such as nitrogen (can be identical with following Purge gas and blanket gas).Valve can be set in place in an end of the carrying gas injection tube line of front, chamber, makes that starting material are injected in the chamber immediately when valve open.In addition, carrying gas can be set according to raw-material species number from the quantity of the pipeline that the carrying gas supply unit is injected into the chamber to be passed through, and mixes mutually to prevent starting material.
Purge gas feeding unit 300 can be supplied to pipeline between starting material generating unit 210 and chamber 600 with Purge gas by a pipeline.Pipeline between starting material generating unit 210 and chamber 600 is connected to following thermal treatment portion, and without the chamber.
Be stored in material in the starting material generating unit 210 and be heated by the well heater (not shown) and evaporate, and then mix, starting material are provided thus with carrying gas by gas nozzle (not shown) injection starting material generation unit.
The starting material of Sheng Chenging are discharged by the gas exhauster that is arranged on starting material generating unit 210 inboards by this way, and are injected in the chamber.At this, the temperature of well heater is to control by the temperature controller (not shown) of serviceability temperature sensor.Be used to inject the pipeline that carries gas and also be provided with well heater and temperature sensor, it is not reduced under the sublimation temperature so that control raw-material temperature, and the amount of pilot-gas, because the evaporating pressure of gas changes according to temperature.
The starting material that are injected in the chamber 600 are used to deposition of barrier film on the defect part of mask; Purge gas is injected preventing forming film on the optical window of laser beam irradiation towards optical window, and blanket gas forms a gas curtain to prevent raw-material leakage.
After the deposition, the residual gas that has participated in thin film deposition is by 700 dischargings of residual gas deliverying unit on the defect part of half-tone mask.
Residual gas deliverying unit 700 can comprise: a material gatherer 710, and it uses collection material in the residual gas that a refrigeratory discharges from the chamber; A thermal treatment portion 720, it separates the material that does not separate from residual gas by material gatherer 710 by thermal treatment; Filtrator 730,740, it will filter with the separating metal particle through the emission gases of material gatherer and thermal treatment portion; A pump 750, it aspirates residual gas by the residual gas bleeder line that is connected to the chamber with constant pressure or bigger pressure; And an exhaust flow controller, its pressure by control pump is regulated the blowdown presssure of residual gas bleeder line.It should be understood that these each parts are connected to exhaust line.Filtrator comprises that is used to filter an oarse-grained main filtrator 730, and an after-filter 740 that is used to filter fine particle.Thermal treatment portion 720 is made of a well heater.
In the system according to this embodiment, gas supply unit is connected to pipeline being used to supply gas to the chamber, and each pipeline all is provided with well heater starting material are heated to sublimation temperature or higher temperature.Usually, starting material can be heated to than the high about 10 ℃ temperature of raw-material sublimation temperature.
So, the gas of injection passes through heater heats, makes carrying gas to mix mutually with the starting material of distillation, and makes that this gas can mix with starting material effectively when Purge gas or blanket gas arrival chamber.
Although in this embodiment, be used for the gas supply unit and the discrete formation of carrying gas supply unit of Purge gas and blanket gas; but these gases can be from a common feeding unit supply, because inert gas or nitrogen can jointly be used as carrying gas, Purge gas and blanket gas.In other words, after inert gas or nitrogen were provided to the chamber from gas supply unit, this inert gas or nitrogen can be provided to by different pipelines in the chamber with as different gas.
Fig. 6 and 7 shows at the optical system 500 of the repair system shown in Fig. 5 and the embodiment in chamber 600.In the accompanying drawings, components identical number is marked by identical reference marker.In the present invention, whole optical system 500 is provided with for following purpose: with laser beam irradiation to the starting material that are supplied in the chamber 600, with on the defect part of half-tone mask the deposition these starting material.
Referring to Fig. 6, optical system 500 comprises: a plurality of beam splitter S, and it is arranged in the bombardment with laser beams path under the laser head unit of laser beam radiation; The slit mask 510 of a control laser beam; Pipe lens 540; Object lens 550; A chamber C, it has an optical window; A substrate 560; An automatic focusing portion 520; A ccd video camera 530; And a plurality of lamp L1, L2 and L3.
Referring to Fig. 7, this optical system adopts Dep laser instrument and Zap laser instrument as laser instrument, and except the parts of the optical system shown in Fig. 6, also comprises laser beam generator Q1, Q2.
Chamber C can have a function by top layer film (through-pellicle), and the chamber is moved along laser via, carries out the back repair process when having defective with convenient half-tone mask after thin film deposition.In traditional photomask is handled, owing to being repaired the back at defects on mask, the top layer film is attached to mask as diaphragm, after being attached to mask, this diaphragm just or else can repair the problem of this mask so exist.Yet, in the present invention,, can after diaphragm is attached to mask, repair mask more so because laser beam has the wavelength that sees through the material that is used for diaphragm.For example, after starting material are deposited to the defect part of half-tone mask, carry out the process of attached diaphragm.Then,, then a preset distance is moved along laser via in the chamber if find in the shadow tone film, to have defective, and with the defective of laser beam irradiation shadow tone film to repair this shadow tone film.Move this chamber and make the top layer film be attached to be inserted in mask and treat top layer film attach frame between the attached top layer film, and make and when this chamber is positioned at existing position, can not implement repair process.
According to embodiment of the present invention, the method and system of carrying out repair process comprises: use laser beam that defective is removed from half-tone mask; On defect area, form barrier film effectively; Regulate the thickness of barrier film; And regulate transmitance in real time, simultaneously, even if after the top layer film forms, also can provide and remove this function of defective, guaranteed to repair the uniform transmitance at part place thus, and guarantee the stability of the reparation of half-tone mask by after reparation, removing open defective, and reduced manufacturing cost.
Although described embodiments more of the present invention in conjunction with the accompanying drawings, but it will be apparent to those skilled in the art that, these embodiments only provide in the mode of illustration, and can make various different modifications, modification, replacement and equivalent variations thereof under prerequisite without departing from the spirit and scope of the present invention.Scope of the present invention should be only by appended claim restriction.
Claims (27)
1. the half-tone mask method of repairing, it is by repairing the defect part of the shadow tone portion on the half-tone mask to the starting material illuminating laser beam at these starting material of deposition on the defect part.
2. method according to claim 1, the reparation of wherein said defect part comprises:
From shadow tone portion, remove defect part, and
Deposition shadow tone film on that part of removing defect part of shadow tone portion.
3. method according to claim 2, wherein said starting material comprise at least a among Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N and the C.
4. method according to claim 2, wherein said shadow tone film is by being selected from Mo
xO
y, Mo+Si, Mo+Si
xN
y, Mo+SiO
2, W
xO
y, W+Si, W+Si
xN
y, W+SiO
2, Cr, Cr+W+SiO
2, Cr+W+Si
xN
y, Cr
xO
y, Cr+Si, Cr+Si
xN
y, Cr+SiO
2, Cr+Mo+Si
xN
y, Cr+Mo+SiO
2, Cr+Mo+W+Si
xN
yAnd Cr+Mo+W+SiO
2A kind of material form.
5. method according to claim 2, the deposition on the wherein said defect part comprises: deposition Mo or W on defect part; And on this film that is deposited as, deposit Si, SiO again
2And Si
ξN
ΨIn any one.
6. according to each described method in the claim 1 to 5, removing of wherein said defect part comprises: remove defect part according to a pattern with the pattern match of defect part.
7. according to each described method in the claim 1 to 5, removing of wherein said defect part comprises: use is corrected (OPC) mask so as to the optical adjacent of the size of the round-shaped edge of compensation laser beam and is removed defect part.
8. method according to claim 7, removing of wherein said defect part comprises: edge locked is carried out in the source with respect to laser beam, to prevent removing flawless part from shadow tone portion.
9. according to each described method in the claim 1 to 5, also comprise: by behind deposition shadow tone film, measuring the transmitance that transmitance is regulated the shadow tone film.
10. method according to claim 9, the adjusting of wherein said transmitance are to carry out in the scope of 0.01-10%.
11. method according to claim 9, remove and the described shadow tone depositing of thin film of wherein said defect part all are to use laser beam with the wavelength that is less than or equal to 400nm to carry out.
12. method according to claim 9, wherein said shadow tone depositing of thin film is to use the laser beam of the pulse recurrence rate with 1Hz-10kHz to carry out.
13. method according to claim 9, wherein in described shadow tone depositing of thin film, starting material are to use the carrying gas of 50-500sccm flux to supply.
14. method according to claim 9, wherein said starting material are to provide under 20-80 ℃ temperature, to reduce raw-material evaporating pressure.
15. the repair system of a half-tone mask comprises:
A chamber is used for depositing of thin film;
A starting material generation/feeding unit, its with raw material supply to the chamber; And
An optical system, its laser beam radiation is depositing the shadow tone film on the defect part of starting material ionization and the half-tone mask in the chamber.
16. system according to claim 15, wherein said optical system comprise a lasing light emitter and a laser head unit.
17. system according to claim 16, wherein said lasing light emitter emission has the laser beam of the wavelength of 400nm.
18. system according to claim 17, wherein said lasing light emitter emission has the laser beam of the pulse recurrence rate of 1Hz-10kHz.
19. system according to claim 15, wherein said starting material generation/feeding unit comprises: a starting material generating unit, and its storage waits to be supplied to the starting material in the chamber, and the starting material distillation is mixed with carrying gas with the starting material with distillation; And a temperature control unit, it will carry gas or starting material maintain its sublimation temperature or higher temperature.
20. system according to claim 19, the quantity of wherein said starting material generating unit is one or more.
21. system according to claim 19, wherein said temperature control unit comprises:
A well heater, its heating raw materials;
A temperature sensor, it detects the temperature in the well heater; And
A temperature controller, the temperature that it comes control heater based on the temperature that temperature sensor detects.
22. according to claim 15 or 19 described systems, wherein said starting material generation/feeding unit is connected at least one carrying gas supply unit, this carrying gas supply unit supply is transported to carrying gas in the chamber with starting material.
23. according to claim 15 or 19 described systems, also comprise: a Purge gas feeding unit, it is supplied to Purge gas in the chamber by a purification pipeline, to purify remaining starting material in the chamber.
24. system according to claim 23 also comprises: a residual gas exhaust unit after its reaction in the chamber, is discharged to the outside with residual gas from the chamber.
25. system according to claim 24, wherein said residual gas exhaust unit comprises:
A material gatherer, it is collection material from the residual gas of discharging in the chamber;
A thermal treatment portion, it separates the material that does not separate from residual gas by the material gatherer by thermal treatment;
A filtrator, the emission gases of material gatherer and thermal treatment portion is passed in its filtration;
A pump, the emission gases of filtrator is passed in its suction; And
A blowdown presssure/flow controller of regulating pump pressure.
26. according to claim 15 or 19 described systems, wherein said starting material comprise among Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N and the C at least a.
27. according to claim 15 or 19 described systems, wherein said shadow tone film is by being selected from Mo
xO
y, Mo+Si, Mo+Si
xN
y, Mo+SiO
2, W
xO
y, W+Si, W+Si
xN
y, W+SiO
2, Cr, Cr+W+SiO
2, Cr+W+Si
xN
y, Cr
xO
y, Cr+Si, Cr+Si
xN
y, Cr+SiO
2, Cr+Mo+Si
xN
y, Cr+Mo+SiO
2, Cr+Mo+W+Si
xN
yAnd Cr+Mo+W+SiO
2A kind of material form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010153020 CN102236248A (en) | 2010-04-20 | 2010-04-20 | Method and system for repairing half-tone mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010153020 CN102236248A (en) | 2010-04-20 | 2010-04-20 | Method and system for repairing half-tone mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102236248A true CN102236248A (en) | 2011-11-09 |
Family
ID=44887032
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010153020 Pending CN102236248A (en) | 2010-04-20 | 2010-04-20 | Method and system for repairing half-tone mask |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102236248A (en) |
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| CN106033172A (en) * | 2015-03-19 | 2016-10-19 | 中芯国际集成电路制造(上海)有限公司 | Method of optical proximity correction repair |
| CN106569387A (en) * | 2015-10-09 | 2017-04-19 | 中芯国际集成电路制造(北京)有限公司 | Mask and repair method thereof |
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Application publication date: 20111109 |