JP2010129981A - エピタキシャルウェーハ製造方法 - Google Patents

エピタキシャルウェーハ製造方法 Download PDF

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Publication number
JP2010129981A
JP2010129981A JP2008306678A JP2008306678A JP2010129981A JP 2010129981 A JP2010129981 A JP 2010129981A JP 2008306678 A JP2008306678 A JP 2008306678A JP 2008306678 A JP2008306678 A JP 2008306678A JP 2010129981 A JP2010129981 A JP 2010129981A
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Prior art keywords
epitaxial wafer
hydrogen chloride
wafer
phase growth
epitaxial
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Japanese (ja)
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JP2010129981A5 (cg-RX-API-DMAC10.html
Inventor
Yoshinobu Mori
義信 森
Hachinoshin Sueyoshi
八之進 末吉
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Sumco Techxiv Corp
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Sumco Techxiv Corp
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Priority to JP2008306678A priority Critical patent/JP2010129981A/ja
Publication of JP2010129981A publication Critical patent/JP2010129981A/ja
Publication of JP2010129981A5 publication Critical patent/JP2010129981A5/ja
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JP2008306678A 2008-12-01 2008-12-01 エピタキシャルウェーハ製造方法 Withdrawn JP2010129981A (ja)

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JP2008306678A JP2010129981A (ja) 2008-12-01 2008-12-01 エピタキシャルウェーハ製造方法

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JP2008306678A JP2010129981A (ja) 2008-12-01 2008-12-01 エピタキシャルウェーハ製造方法

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JP2010129981A true JP2010129981A (ja) 2010-06-10
JP2010129981A5 JP2010129981A5 (cg-RX-API-DMAC10.html) 2012-01-19

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111261497A (zh) * 2018-11-30 2020-06-09 胜高股份有限公司 外延晶片的制造方法及装置
CN115896936A (zh) * 2022-12-22 2023-04-04 西安奕斯伟材料科技有限公司 气体供应的处理方法、气体供应装置和外延生长设备

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111261497A (zh) * 2018-11-30 2020-06-09 胜高股份有限公司 外延晶片的制造方法及装置
CN115896936A (zh) * 2022-12-22 2023-04-04 西安奕斯伟材料科技有限公司 气体供应的处理方法、气体供应装置和外延生长设备

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