JP2010118382A - Ｓｉｍｏｘウェーハの結晶欠陥の低減方法 - Google Patents
Ｓｉｍｏｘウェーハの結晶欠陥の低減方法 Download PDFInfo
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- JP2010118382A JP2010118382A JP2008288612A JP2008288612A JP2010118382A JP 2010118382 A JP2010118382 A JP 2010118382A JP 2008288612 A JP2008288612 A JP 2008288612A JP 2008288612 A JP2008288612 A JP 2008288612A JP 2010118382 A JP2010118382 A JP 2010118382A
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- Prior art keywords
- wafer
- silicon layer
- ions
- implanted
- crystal defects
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- 239000013078 crystal Substances 0.000 title claims abstract description 63
- 230000007547 defect Effects 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 82
- 239000010703 silicon Substances 0.000 claims abstract description 82
- 239000001301 oxygen Substances 0.000 claims abstract description 76
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 76
- 150000002500 ions Chemical class 0.000 claims abstract description 57
- 238000002513 implantation Methods 0.000 claims abstract description 44
- 238000010438 heat treatment Methods 0.000 claims abstract description 38
- 238000005468 ion implantation Methods 0.000 claims description 53
- -1 oxygen ions Chemical class 0.000 claims description 37
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000001953 recrystallisation Methods 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 39
- 238000000926 separation method Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 127
- 125000004429 atom Chemical group 0.000 description 18
- 238000009826 distribution Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000002244 precipitate Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008288612A JP2010118382A (ja) | 2008-11-11 | 2008-11-11 | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法 |
| US12/551,958 US8030183B2 (en) | 2008-09-08 | 2009-09-01 | Method for reducing crystal defect of SIMOX wafer and SIMOX wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008288612A JP2010118382A (ja) | 2008-11-11 | 2008-11-11 | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010118382A true JP2010118382A (ja) | 2010-05-27 |
| JP2010118382A5 JP2010118382A5 (https=) | 2012-02-16 |
Family
ID=42305893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008288612A Ceased JP2010118382A (ja) | 2008-09-08 | 2008-11-11 | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010118382A (https=) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169145A (ja) * | 1984-09-12 | 1986-04-09 | Toshiba Corp | 半導体基体の製造方法 |
| JPS6417444A (en) * | 1987-06-15 | 1989-01-20 | Commissariat Energie Atomique | Manufacture of insulation buried in semiconductor substrate by ion implantation and construction of semiconductor containing the insulation |
| JPH04162618A (ja) * | 1990-10-26 | 1992-06-08 | Hitachi Ltd | 半導体装置の製造方法およびイオン打込み装置ならびに半導体装置 |
| JPH06283421A (ja) * | 1993-03-18 | 1994-10-07 | Mitsubishi Materials Corp | Ｓｏｉ基板およびその製造方法 |
| JPH07201975A (ja) * | 1993-12-28 | 1995-08-04 | Nippon Steel Corp | 半導体基板の製造方法および製造装置 |
| JPH1126390A (ja) * | 1997-07-07 | 1999-01-29 | Kobe Steel Ltd | 欠陥発生防止方法 |
| JP2002289552A (ja) * | 2001-03-28 | 2002-10-04 | Nippon Steel Corp | Ｓｉｍｏｘ基板の製造方法およびｓｉｍｏｘ基板 |
| JP2007005563A (ja) * | 2005-06-23 | 2007-01-11 | Sumco Corp | Ｓｉｍｏｘウェーハの製造方法 |
| JP2010062503A (ja) * | 2008-09-08 | 2010-03-18 | Sumco Corp | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法及びｓｉｍｏｘウェーハ |
-
2008
- 2008-11-11 JP JP2008288612A patent/JP2010118382A/ja not_active Ceased
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169145A (ja) * | 1984-09-12 | 1986-04-09 | Toshiba Corp | 半導体基体の製造方法 |
| JPS6417444A (en) * | 1987-06-15 | 1989-01-20 | Commissariat Energie Atomique | Manufacture of insulation buried in semiconductor substrate by ion implantation and construction of semiconductor containing the insulation |
| JPH04162618A (ja) * | 1990-10-26 | 1992-06-08 | Hitachi Ltd | 半導体装置の製造方法およびイオン打込み装置ならびに半導体装置 |
| JPH06283421A (ja) * | 1993-03-18 | 1994-10-07 | Mitsubishi Materials Corp | Ｓｏｉ基板およびその製造方法 |
| JPH07201975A (ja) * | 1993-12-28 | 1995-08-04 | Nippon Steel Corp | 半導体基板の製造方法および製造装置 |
| JPH1126390A (ja) * | 1997-07-07 | 1999-01-29 | Kobe Steel Ltd | 欠陥発生防止方法 |
| JP2002289552A (ja) * | 2001-03-28 | 2002-10-04 | Nippon Steel Corp | Ｓｉｍｏｘ基板の製造方法およびｓｉｍｏｘ基板 |
| JP2007005563A (ja) * | 2005-06-23 | 2007-01-11 | Sumco Corp | Ｓｉｍｏｘウェーハの製造方法 |
| JP2010062503A (ja) * | 2008-09-08 | 2010-03-18 | Sumco Corp | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法及びｓｉｍｏｘウェーハ |
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