JP2010118382A5 - - Google Patents
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- Publication number
- JP2010118382A5 JP2010118382A5 JP2008288612A JP2008288612A JP2010118382A5 JP 2010118382 A5 JP2010118382 A5 JP 2010118382A5 JP 2008288612 A JP2008288612 A JP 2008288612A JP 2008288612 A JP2008288612 A JP 2008288612A JP 2010118382 A5 JP2010118382 A5 JP 2010118382A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- crystal defects
- ions
- silicon layer
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000013078 crystal Substances 0.000 claims 9
- 230000007547 defect Effects 0.000 claims 9
- 150000002500 ions Chemical class 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 238000002513 implantation Methods 0.000 claims 4
- 238000005468 ion implantation Methods 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- -1 oxygen ions Chemical class 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 238000001953 recrystallisation Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008288612A JP2010118382A (ja) | 2008-11-11 | 2008-11-11 | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法 |
| US12/551,958 US8030183B2 (en) | 2008-09-08 | 2009-09-01 | Method for reducing crystal defect of SIMOX wafer and SIMOX wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008288612A JP2010118382A (ja) | 2008-11-11 | 2008-11-11 | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010118382A JP2010118382A (ja) | 2010-05-27 |
| JP2010118382A5 true JP2010118382A5 (https=) | 2012-02-16 |
Family
ID=42305893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008288612A Ceased JP2010118382A (ja) | 2008-09-08 | 2008-11-11 | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010118382A (https=) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169145A (ja) * | 1984-09-12 | 1986-04-09 | Toshiba Corp | 半導体基体の製造方法 |
| FR2616590B1 (fr) * | 1987-06-15 | 1990-03-02 | Commissariat Energie Atomique | Procede de fabrication d'une couche d'isolant enterree dans un substrat semi-conducteur par implantation ionique et structure semi-conductrice comportant cette couche |
| JPH04162618A (ja) * | 1990-10-26 | 1992-06-08 | Hitachi Ltd | 半導体装置の製造方法およびイオン打込み装置ならびに半導体装置 |
| JPH06283421A (ja) * | 1993-03-18 | 1994-10-07 | Mitsubishi Materials Corp | Ｓｏｉ基板およびその製造方法 |
| JP3139904B2 (ja) * | 1993-12-28 | 2001-03-05 | 新日本製鐵株式会社 | 半導体基板の製造方法および製造装置 |
| JPH1126390A (ja) * | 1997-07-07 | 1999-01-29 | Kobe Steel Ltd | 欠陥発生防止方法 |
| JP2002289552A (ja) * | 2001-03-28 | 2002-10-04 | Nippon Steel Corp | Ｓｉｍｏｘ基板の製造方法およびｓｉｍｏｘ基板 |
| JP2007005563A (ja) * | 2005-06-23 | 2007-01-11 | Sumco Corp | Ｓｉｍｏｘウェーハの製造方法 |
| JP2010062503A (ja) * | 2008-09-08 | 2010-03-18 | Sumco Corp | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法及びｓｉｍｏｘウェーハ |
-
2008
- 2008-11-11 JP JP2008288612A patent/JP2010118382A/ja not_active Ceased
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