JP2010062503A5 - - Google Patents
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- Publication number
- JP2010062503A5 JP2010062503A5 JP2008229584A JP2008229584A JP2010062503A5 JP 2010062503 A5 JP2010062503 A5 JP 2010062503A5 JP 2008229584 A JP2008229584 A JP 2008229584A JP 2008229584 A JP2008229584 A JP 2008229584A JP 2010062503 A5 JP2010062503 A5 JP 2010062503A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- silicon layer
- crystal defects
- simox wafer
- simox
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000013078 crystal Substances 0.000 claims 9
- 230000007547 defect Effects 0.000 claims 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 8
- 239000010703 silicon Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 7
- 150000002500 ions Chemical class 0.000 claims 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- -1 oxygen ions Chemical class 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 238000001953 recrystallisation Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008229584A JP2010062503A (ja) | 2008-09-08 | 2008-09-08 | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法及びｓｉｍｏｘウェーハ |
| US12/551,958 US8030183B2 (en) | 2008-09-08 | 2009-09-01 | Method for reducing crystal defect of SIMOX wafer and SIMOX wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008229584A JP2010062503A (ja) | 2008-09-08 | 2008-09-08 | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法及びｓｉｍｏｘウェーハ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010062503A JP2010062503A (ja) | 2010-03-18 |
| JP2010062503A5 true JP2010062503A5 (https=) | 2011-10-27 |
Family
ID=42188952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008229584A Ceased JP2010062503A (ja) | 2008-09-08 | 2008-09-08 | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法及びｓｉｍｏｘウェーハ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010062503A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010118382A (ja) * | 2008-11-11 | 2010-05-27 | Sumco Corp | Ｓｉｍｏｘウェーハの結晶欠陥の低減方法 |
| KR20130017914A (ko) * | 2011-08-12 | 2013-02-20 | 삼성전자주식회사 | 광전 집적회로 기판 및 그 제조방법 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6169145A (ja) * | 1984-09-12 | 1986-04-09 | Toshiba Corp | 半導体基体の製造方法 |
| JPH03240230A (ja) * | 1990-02-19 | 1991-10-25 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH05291543A (ja) * | 1992-04-15 | 1993-11-05 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPH06283421A (ja) * | 1993-03-18 | 1994-10-07 | Mitsubishi Materials Corp | Ｓｏｉ基板およびその製造方法 |
| JPH07193072A (ja) * | 1993-12-27 | 1995-07-28 | Nec Corp | 半導体基板の製造方法 |
| JP3139904B2 (ja) * | 1993-12-28 | 2001-03-05 | 新日本製鐵株式会社 | 半導体基板の製造方法および製造装置 |
| JPH1079355A (ja) * | 1996-09-03 | 1998-03-24 | Komatsu Denshi Kinzoku Kk | Ｓｏｉ基板の製造方法 |
| JPH10163218A (ja) * | 1996-11-28 | 1998-06-19 | Nkk Corp | 半導体基板とその製造方法 |
| JPH1126390A (ja) * | 1997-07-07 | 1999-01-29 | Kobe Steel Ltd | 欠陥発生防止方法 |
| JP2002289552A (ja) * | 2001-03-28 | 2002-10-04 | Nippon Steel Corp | Ｓｉｍｏｘ基板の製造方法およびｓｉｍｏｘ基板 |
| JP2002343800A (ja) * | 2001-05-18 | 2002-11-29 | Fujitsu Ltd | シリコン半導体装置及びその製造方法 |
-
2008
- 2008-09-08 JP JP2008229584A patent/JP2010062503A/ja not_active Ceased
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