JP2010062503A - Ｓｉｍｏｘウェーハの結晶欠陥の低減方法及びｓｉｍｏｘウェーハ - Google Patents

Ｓｉｍｏｘウェーハの結晶欠陥の低減方法及びｓｉｍｏｘウェーハ Download PDF

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Publication number
JP2010062503A
JP2010062503A JP2008229584A JP2008229584A JP2010062503A JP 2010062503 A JP2010062503 A JP 2010062503A JP 2008229584 A JP2008229584 A JP 2008229584A JP 2008229584 A JP2008229584 A JP 2008229584A JP 2010062503 A JP2010062503 A JP 2010062503A
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JP
Japan
Prior art keywords
wafer
silicon layer
crystal defects
simox
simox wafer
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Ceased
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JP2008229584A
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English (en)
Japanese (ja)
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JP2010062503A5 (https=
Inventor
Takaaki Kasamatsu
隆亮 笠松
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Sumco Corp
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Sumco Corp
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Priority to JP2008229584A priority Critical patent/JP2010062503A/ja
Priority to US12/551,958 priority patent/US8030183B2/en
Publication of JP2010062503A publication Critical patent/JP2010062503A/ja
Publication of JP2010062503A5 publication Critical patent/JP2010062503A5/ja
Ceased legal-status Critical Current

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  • Recrystallisation Techniques (AREA)
JP2008229584A 2008-09-08 2008-09-08 Ｓｉｍｏｘウェーハの結晶欠陥の低減方法及びｓｉｍｏｘウェーハ Ceased JP2010062503A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008229584A JP2010062503A (ja) 2008-09-08 2008-09-08 Ｓｉｍｏｘウェーハの結晶欠陥の低減方法及びｓｉｍｏｘウェーハ
US12/551,958 US8030183B2 (en) 2008-09-08 2009-09-01 Method for reducing crystal defect of SIMOX wafer and SIMOX wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008229584A JP2010062503A (ja) 2008-09-08 2008-09-08 Ｓｉｍｏｘウェーハの結晶欠陥の低減方法及びｓｉｍｏｘウェーハ

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JP2010062503A true JP2010062503A (ja) 2010-03-18
JP2010062503A5 JP2010062503A5 (https=) 2011-10-27

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010118382A (ja) * 2008-11-11 2010-05-27 Sumco Corp Ｓｉｍｏｘウェーハの結晶欠陥の低減方法
JP2013042106A (ja) * 2011-08-12 2013-02-28 Samsung Electronics Co Ltd 光電集積回路基板及びその製造方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169145A (ja) * 1984-09-12 1986-04-09 Toshiba Corp 半導体基体の製造方法
JPH03240230A (ja) * 1990-02-19 1991-10-25 Fujitsu Ltd 半導体装置の製造方法
JPH05291543A (ja) * 1992-04-15 1993-11-05 Fujitsu Ltd 半導体装置の製造方法
JPH06283421A (ja) * 1993-03-18 1994-10-07 Mitsubishi Materials Corp Ｓｏｉ基板およびその製造方法
JPH07193072A (ja) * 1993-12-27 1995-07-28 Nec Corp 半導体基板の製造方法
JPH07201975A (ja) * 1993-12-28 1995-08-04 Nippon Steel Corp 半導体基板の製造方法および製造装置
JPH1079355A (ja) * 1996-09-03 1998-03-24 Komatsu Denshi Kinzoku Kk Ｓｏｉ基板の製造方法
JPH10163218A (ja) * 1996-11-28 1998-06-19 Nkk Corp 半導体基板とその製造方法
JPH1126390A (ja) * 1997-07-07 1999-01-29 Kobe Steel Ltd 欠陥発生防止方法
JP2002289552A (ja) * 2001-03-28 2002-10-04 Nippon Steel Corp Ｓｉｍｏｘ基板の製造方法およびｓｉｍｏｘ基板
JP2002343800A (ja) * 2001-05-18 2002-11-29 Fujitsu Ltd シリコン半導体装置及びその製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169145A (ja) * 1984-09-12 1986-04-09 Toshiba Corp 半導体基体の製造方法
JPH03240230A (ja) * 1990-02-19 1991-10-25 Fujitsu Ltd 半導体装置の製造方法
JPH05291543A (ja) * 1992-04-15 1993-11-05 Fujitsu Ltd 半導体装置の製造方法
JPH06283421A (ja) * 1993-03-18 1994-10-07 Mitsubishi Materials Corp Ｓｏｉ基板およびその製造方法
JPH07193072A (ja) * 1993-12-27 1995-07-28 Nec Corp 半導体基板の製造方法
JPH07201975A (ja) * 1993-12-28 1995-08-04 Nippon Steel Corp 半導体基板の製造方法および製造装置
JPH1079355A (ja) * 1996-09-03 1998-03-24 Komatsu Denshi Kinzoku Kk Ｓｏｉ基板の製造方法
JPH10163218A (ja) * 1996-11-28 1998-06-19 Nkk Corp 半導体基板とその製造方法
JPH1126390A (ja) * 1997-07-07 1999-01-29 Kobe Steel Ltd 欠陥発生防止方法
JP2002289552A (ja) * 2001-03-28 2002-10-04 Nippon Steel Corp Ｓｉｍｏｘ基板の製造方法およびｓｉｍｏｘ基板
JP2002343800A (ja) * 2001-05-18 2002-11-29 Fujitsu Ltd シリコン半導体装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010118382A (ja) * 2008-11-11 2010-05-27 Sumco Corp Ｓｉｍｏｘウェーハの結晶欠陥の低減方法
JP2013042106A (ja) * 2011-08-12 2013-02-28 Samsung Electronics Co Ltd 光電集積回路基板及びその製造方法

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