JP2010109372A - 二重磁気異方性自由層を有する磁気トンネル接合構造 - Google Patents
二重磁気異方性自由層を有する磁気トンネル接合構造 Download PDFInfo
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- H01F10/3277—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets by use of artificial ferrimagnets [AFI] only
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Abstract
【解決手段】磁気トンネル接合構造は、固定された磁化方向を有する第1磁性層10と、反転可能な磁化方向を有する第2磁性層30と、第1磁性層10と第2磁性層30との間に形成される非磁性層20と、第2磁性層30との磁性結合により第2磁性層30の磁化方向を第2磁性層30の平面に対して傾斜させ、垂直磁気異方性エネルギーが水平磁気異方性エネルギーより大きい第3磁性層40と、第2磁性層30と第3磁性層40との間に形成され、第2磁性層30と第3磁性層40が異なる結晶配向性を有するように分離する結晶構造分離層50とを含む。
【選択図】図1
Description
第一に、磁気トンネル接合構造の構成において、非磁性層(すなわち、トンネル障壁層)に隣接する第2磁性層に垂直磁気異方性エネルギーの大きい第3磁性層を磁気的に結合させて、前記第2磁性層と前記第3磁性層間の磁性結合により、電流非印加時の前記第2磁性層の磁化方向を水平方向(すなわち、前記第2磁性層の平面)に対して傾斜させることにより、磁化反転に必要な臨界電流値を大幅に下げることができる。
Claims (14)
- 固定された磁化方向を有する第1磁性層と、
反転可能な磁化方向を有する第2磁性層と、
前記第1磁性層と前記第2磁性層との間に形成される非磁性層と、
前記第2磁性層との磁性結合により前記第2磁性層の磁化方向を前記第2磁性層の平面に対して傾斜させ、垂直磁気異方性エネルギーが水平磁気異方性エネルギーより大きい第3磁性層と、
前記第2磁性層と前記第3磁性層との間に形成され、前記第2磁性層と前記第3磁性層が異なる結晶配向性を有するように分離する結晶構造分離層と
を含むことを特徴とする磁気トンネル接合構造。 - 前記結晶構造分離層が非晶質構造を有することを特徴とする請求項1に記載の磁気トンネル接合構造。
- 前記第2磁性層が体心立方(BCC)格子構造を有し、前記第3磁性層が面心立方(FCC)格子構造又は稠密六方(HCP)格子構造を有することを特徴とする請求項1又は2に記載の磁気トンネル接合構造。
- 前記第3磁性層の磁化容易軸が、前記第2磁性層の平面に対して垂直方向に配向されることを特徴とする請求項1に記載の磁気トンネル接合構造。
- 前記第2磁性層の磁化方向が前記第2磁性層の平面に対して傾斜した角度θは、−30゜≦θ<0゜又は0゜<θ≦30゜であることを特徴とする請求項1に記載の磁気トンネル接合構造。
- 前記第1磁性層が磁性層/非磁性層/磁性層の積層構造を有することを特徴とする請求項1に記載の磁気トンネル接合構造。
- 前記第1磁性層及び前記第2磁性層が、それぞれCoFeX(ここで、XはB、Re、Rh、Cr、Cu、Gd、及びTbからなる群から選択された少なくとも1つ)を含むことを特徴とする請求項1に記載の磁気トンネル接合構造。
- 前記非磁性層が絶縁体又は半導体を含み、前記絶縁体がMgO、Al2O3、HfO2、TiO2、Y2O3、及びYb2O3からなる群から選択された少なくとも1つであることを特徴とする請求項1に記載の磁気トンネル接合構造。
- 前記第3磁性層が、GdFeCo又はTbFeCoを含むか、又は[Co/Pt]n、[Co/Pd]n、[Ni/Pt]n、又は[CoCr/Pt]n系多層薄膜(ここで、nは1と10の間)を含むことを特徴とする請求項1に記載の磁気トンネル接合構造。
- 前記第3磁性層が[Co/Ni]n又は[CoX合金/Ni]n系多層薄膜を含み、ここで、nは1と10の間であり、XはB、Re、Rh、Cr、Cu、Gd、及びTbからなる群から選択された少なくとも1つであることを特徴とする請求項1に記載の磁気トンネル接合構造。
- 前記結晶構造分離層が、200〜600℃の温度で熱処理時に非晶質構造を有する物質を含むことを特徴とする請求項1に記載の磁気トンネル接合構造。
- 前記結晶構造分離層が、Ru、Ta、Re、及びRhからなる群から選択された少なくとも1つを含むことを特徴とする請求項1に記載の磁気トンネル接合構造。
- 前記第3磁性層上に形成され、前記第3磁性層の垂直磁気異方性エネルギーを増大させるバッファ層をさらに含むことを特徴とする請求項1に記載の磁気トンネル接合構造。
- 前記バッファ層が、Au、Cu、Pd、Pt、Ta、及びダイアモンド状炭素からなる群から選択された少なくとも1つを含むことを特徴とする請求項13に記載の磁気トンネル接合構造。
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JP5113135B2 (ja) | 2013-01-09 |
EP2182532B1 (en) | 2017-01-11 |
US20100109111A1 (en) | 2010-05-06 |
KR20100047985A (ko) | 2010-05-11 |
KR101178767B1 (ko) | 2012-09-07 |
EP2182532A1 (en) | 2010-05-05 |
US8338004B2 (en) | 2012-12-25 |
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