JP2010109286A - 表示装置 - Google Patents

表示装置 Download PDF

Info

Publication number
JP2010109286A
JP2010109286A JP2008282183A JP2008282183A JP2010109286A JP 2010109286 A JP2010109286 A JP 2010109286A JP 2008282183 A JP2008282183 A JP 2008282183A JP 2008282183 A JP2008282183 A JP 2008282183A JP 2010109286 A JP2010109286 A JP 2010109286A
Authority
JP
Japan
Prior art keywords
region
semiconductor film
electrode
display device
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008282183A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010109286A5 (OSRAM
Inventor
Hidekazu Miyake
秀和 三宅
Takuo Kaito
拓生 海東
Teruji Saito
輝児 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Hitachi Displays Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Displays Ltd filed Critical Hitachi Displays Ltd
Priority to JP2008282183A priority Critical patent/JP2010109286A/ja
Priority to US12/608,193 priority patent/US20100109010A1/en
Publication of JP2010109286A publication Critical patent/JP2010109286A/ja
Publication of JP2010109286A5 publication Critical patent/JP2010109286A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP2008282183A 2008-10-31 2008-10-31 表示装置 Withdrawn JP2010109286A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008282183A JP2010109286A (ja) 2008-10-31 2008-10-31 表示装置
US12/608,193 US20100109010A1 (en) 2008-10-31 2009-10-29 Display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008282183A JP2010109286A (ja) 2008-10-31 2008-10-31 表示装置

Publications (2)

Publication Number Publication Date
JP2010109286A true JP2010109286A (ja) 2010-05-13
JP2010109286A5 JP2010109286A5 (OSRAM) 2011-08-11

Family

ID=42130306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008282183A Withdrawn JP2010109286A (ja) 2008-10-31 2008-10-31 表示装置

Country Status (2)

Country Link
US (1) US20100109010A1 (OSRAM)
JP (1) JP2010109286A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012178452A (ja) * 2011-02-25 2012-09-13 Japan Display East Co Ltd 表示装置及び表示装置の製造方法
US8907993B2 (en) 2011-03-30 2014-12-09 Japan Display Inc. Display device including a data selector circuit

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102184893A (zh) * 2011-04-18 2011-09-14 上海大学 一种基于微晶硅的tft有源矩阵制造工艺
CN103022083B (zh) * 2012-12-10 2015-07-22 京东方科技集团股份有限公司 一种阵列基板、显示装置及阵列基板的制备方法
US11462608B2 (en) 2020-03-25 2022-10-04 Apple Inc. Large panel displays with reduced routing line resistance

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6680223B1 (en) * 1997-09-23 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP5216204B2 (ja) * 2006-10-31 2013-06-19 株式会社半導体エネルギー研究所 液晶表示装置及びその作製方法
JP2008124266A (ja) * 2006-11-13 2008-05-29 Hitachi Displays Ltd 表示装置および表示装置の製造方法
JP2009071289A (ja) * 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012178452A (ja) * 2011-02-25 2012-09-13 Japan Display East Co Ltd 表示装置及び表示装置の製造方法
US8907993B2 (en) 2011-03-30 2014-12-09 Japan Display Inc. Display device including a data selector circuit

Also Published As

Publication number Publication date
US20100109010A1 (en) 2010-05-06

Similar Documents

Publication Publication Date Title
KR102860050B1 (ko) 박막 트랜지스터 기판
CN104867932B (zh) 薄膜晶体管基板及利用该薄膜晶体管基板的显示装置
JP5303119B2 (ja) 半導体装置
JP5306784B2 (ja) 表示装置
US8421944B2 (en) Display device substrate, display device, and wiring substrate
JP2010003910A (ja) 表示素子
CN103926765B (zh) 一种双栅极扫描线驱动的像素结构及其制作方法
WO2018180617A1 (ja) アクティブマトリクス基板、液晶表示装置および有機ｅｌ表示装置
JP5724105B2 (ja) 薄膜トランジスタアレイ装置、ｅｌ表示パネル、ｅｌ表示装置、薄膜トランジスタアレイ装置の製造方法、ｅｌ表示パネルの製造方法
JP5384088B2 (ja) 表示装置
JP5670458B2 (ja) マスク・レベルを削減した金属酸化物ｆｅｔの製造法
KR20150101416A (ko) 박막 트랜지스터 기판 및 이를 이용한 표시장치
WO2018180723A1 (ja) アクティブマトリクス基板およびその製造方法
KR20160001821A (ko) 이중 광 차단층을 구비한 산화물 반도체를 포함하는 박막 트랜지스터 기판
JP2009099636A (ja) 表示装置および表示装置の製造方法
JP2010109286A (ja) 表示装置
TWI401805B (zh) 顯示裝置
KR20160027903A (ko) 박막 트랜지스터 기판 및 이를 이용한 표시장치
JP2012178452A (ja) 表示装置及び表示装置の製造方法
JP6061536B2 (ja) 表示装置
JP5518382B2 (ja) 液晶表示装置
JP2010245162A (ja) 薄膜トランジスタ
TWI459566B (zh) 薄膜電晶體、具有其之顯示裝置及製造薄膜電晶體與顯示裝置之方法
JP5202254B2 (ja) 表示装置および表示装置の製造方法
JP2010205850A (ja) 表示装置

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20110112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110627

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110627

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20120724