JP2010097993A - プラズマ処理方法 - Google Patents
プラズマ処理方法 Download PDFInfo
- Publication number
- JP2010097993A JP2010097993A JP2008265261A JP2008265261A JP2010097993A JP 2010097993 A JP2010097993 A JP 2010097993A JP 2008265261 A JP2008265261 A JP 2008265261A JP 2008265261 A JP2008265261 A JP 2008265261A JP 2010097993 A JP2010097993 A JP 2010097993A
- Authority
- JP
- Japan
- Prior art keywords
- processing chamber
- gas
- plasma
- processing
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title abstract description 30
- 238000009832 plasma treatment Methods 0.000 title description 13
- 238000012545 processing Methods 0.000 claims abstract description 87
- 239000007789 gas Substances 0.000 claims abstract description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000003672 processing method Methods 0.000 claims abstract description 15
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 47
- 238000011109 contamination Methods 0.000 abstract description 36
- 229910052751 metal Inorganic materials 0.000 abstract description 30
- 239000002184 metal Substances 0.000 abstract description 30
- 230000008569 process Effects 0.000 abstract description 25
- 238000012423 maintenance Methods 0.000 abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 13
- 239000001301 oxygen Substances 0.000 abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 12
- 238000004140 cleaning Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000002265 prevention Effects 0.000 abstract description 7
- 239000011734 sodium Substances 0.000 description 17
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 16
- 229910052708 sodium Inorganic materials 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 10
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000012495 reaction gas Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000005691 oxidative coupling reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
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- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008265261A JP2010097993A (ja) | 2008-10-14 | 2008-10-14 | プラズマ処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008265261A JP2010097993A (ja) | 2008-10-14 | 2008-10-14 | プラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010097993A true JP2010097993A (ja) | 2010-04-30 |
| JP2010097993A5 JP2010097993A5 (enrdf_load_stackoverflow) | 2011-11-17 |
Family
ID=42259494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008265261A Pending JP2010097993A (ja) | 2008-10-14 | 2008-10-14 | プラズマ処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010097993A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019053925A1 (ja) * | 2017-09-12 | 2019-03-21 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置及びプログラム |
| JP2022049557A (ja) * | 2020-09-16 | 2022-03-29 | 東京エレクトロン株式会社 | プラズマパージ方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005074016A1 (ja) * | 2004-01-28 | 2005-08-11 | Tokyo Electron Limited | 基板処理装置の処理室清浄化方法、基板処理装置、および基板処理方法 |
-
2008
- 2008-10-14 JP JP2008265261A patent/JP2010097993A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005074016A1 (ja) * | 2004-01-28 | 2005-08-11 | Tokyo Electron Limited | 基板処理装置の処理室清浄化方法、基板処理装置、および基板処理方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019053925A1 (ja) * | 2017-09-12 | 2019-03-21 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置及びプログラム |
| JP2022049557A (ja) * | 2020-09-16 | 2022-03-29 | 東京エレクトロン株式会社 | プラズマパージ方法 |
| JP7479257B2 (ja) | 2020-09-16 | 2024-05-08 | 東京エレクトロン株式会社 | プラズマパージ方法 |
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