JP2010087079A - 表面処理装置 - Google Patents
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- 238000004381 surface treatment Methods 0.000 claims description 25
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
- H01J37/32376—Scanning across large workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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Abstract
【解決手段】被処理物9を搬送方向に沿って搬入開口13から処理槽10の内部に搬入し、処理空間19に配置する。供給系30から処理ガスを処理空間19に供給し、被処理物9を表面処理する。その後、被処理物9を搬出開口14から搬出する。排気系40で処理槽10の内部からガスを排出する。開口13,14を、互いに上記搬送方向と直交する対向方向に対向距離Dを隔てて対向する一対の整流面17,18によって画成する。開口13,14の上記搬送方向に沿う奥行きLを、対向距離Dの2倍以上とし、好ましくは6倍以上とする。
【選択図】図1
Description
特許文献3の表面処理装置は、放電プラズマ発生部を囲む内槽と、この内槽を囲む外槽とを備えている。外槽と内槽との間の空間の内圧は、内槽の内圧より低く、かつ外気圧より低くなっている。この結果、処理ガスが内槽から外槽と内槽との間の空間に流出し、かつ外気が外槽に流入するようになっている。
本発明は、上記事情に鑑みてなされたものであり、その目的とするところは、表面処理用の処理槽に設けた、被処理物の出し入れ用の開口でのガスの流れを安定させることにある。
被処理物を搬送方向に沿って搬入し又は搬出する開口を有し、かつ内部に前記表面処理を行なう処理空間が設けられた処理槽と、
前記処理空間に処理ガスを供給する供給系と、
前記処理槽の内部からガスを排出する排気系と、
を備え、前記処理槽の前記開口が、互いに前記搬送方向と直交する対向方向に対向距離を隔てて対向する一対の整流面によって画成され、前記開口の前記搬送方向に沿う奥行きが、前記対向距離の2倍以上であることを特徴とする。
前記開口の形状は、長方形が好ましい。
前記対向距離が、場所によって異なる場合、対向距離は平均した値と定義する。前記開口の奥行きが、前記対向距離の平均値の2倍以上であることが好ましく、前記開口の奥行きが、前記対向距離の平均値の6〜10倍であることが一層好ましい。
図1は、本発明の第1実施形態を示したものである。この実施形態の被処理物9は、フラットパネルディスプレイ用のガラス基板で構成されているが、本発明は、これに限定されるものではなく、例えば半導体ウェハ、連続シート状の樹脂フィルム等、種々の被処理物に適用できる。この実施形態の表面処理内容は、ガラス基板9の表面に被膜されたシリコン(図示省略)のエッチングであるが、本発明は、これに限定されるものではなく、酸化シリコンや窒化シリコンのエッチングにも適用でき、エッチングに限られず、成膜、洗浄、撥水化、親水化等、種々の表面処理に適用できる。
搬送手段20は、ローラーコンベアに限られず、移動式ステージ、浮上ステージ、ロボットアーム等で構成されていてもよい。
図2及び図3に示すように、搬入側壁11には開口部16が形成されている。開口部16は、搬入側壁11の幅方向(図2の左右方向、図3の紙面直交方向)に延びるスリット状になっている。
図4は、搬入出開口の変形例を示したものである。この変形例では、上下の各整流板15が、整流板部15a,15bに分割されておらず、一体の平板状になっている。上側の整流板15Aが、搬入側壁11の開口部16より上側部分の外側面に取り付けられている。上側整流板15Aの下面と開口部16の上端縁とが面一になっている。互いに面一をなす上側整流板15Aの下面及び開口部16の上端縁によって、上側整流面17が構成されている。
搬入出開口13,14の奥行きLが、厚さDの2倍以上であり(L≧2×D)、好ましくは6倍以上(L≧6×D)である点は、第1実施形態と同じである。なお、整流板15を、壁11,12の外側面にではなく、壁11,12の内側面から処理槽10の内部に突出するように取り付けてもよい。
この形態では、整流板15の被処理物9の搬送方向に沿う長さが、搬入出開口13,14の奥行きLと一致している。搬入出開口13,14の奥行きLが、厚さDの2倍以上であり(L≧2×D)、好ましくは6倍以上(L≧6×D)である点は、既述の実施形態と同じである。
例えば、搬入開口13と搬出開口14が、1つの共通の開口で構成されていてもよい。搬送手段20が、被処理物9を上記共通の開口から処理槽10の内部に搬入して処理空間19に配置し、表面処理後、被処理物9を上記共通の開口から外部へ搬出することにしてもよい。被処理物9の処理槽10への搬入及び処理槽10からの搬出は、搬送手段20を用いる他、作業者が行なってもよい。
9 被処理物
10 処理槽
11 搬入側壁
12 搬出側壁
13 搬入開口
14 搬出開口
15 整流板
15a 上側整流板部
15b 下側整流板部
16 開口部
17 上側整流面
18 下側整流面
19 処理空間
20 搬送手段
30 供給系
33 供給ノズル
40 排気系
50 再利用部
51 分離回収器
D 整流面の対向距離
L 開口の奥行き
Claims (2)
- 被処理物の表面に処理ガスを接触させ、前記表面を処理する装置において、
被処理物を搬送方向に沿って搬入し又は搬出する開口を有し、かつ内部に前記表面処理を行なう処理空間が設けられた処理槽と、
前記処理空間に処理ガスを供給する供給系と、
前記処理槽の内部からガスを排出する排気系と、
を備え、前記処理槽の前記開口が、互いに前記搬送方向と直交する対向方向に対向距離を隔てて対向する一対の整流面によって画成され、前記開口の前記搬送方向に沿う奥行きが、前記対向距離の2倍以上であることを特徴とする表面処理装置。 - 前記開口の奥行きが、前記対向距離の6倍以上であることを特徴とする請求項1に記載の表面処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008252334A JP4486146B2 (ja) | 2008-09-30 | 2008-09-30 | 表面処理装置 |
CN2009801381737A CN102165566B (zh) | 2008-09-30 | 2009-09-16 | 表面处理装置 |
PCT/JP2009/004634 WO2010038372A1 (ja) | 2008-09-30 | 2009-09-16 | 表面処理装置 |
US13/003,161 US20110209829A1 (en) | 2008-09-30 | 2009-09-16 | Surface treatment apparatus |
KR1020117007341A KR101045486B1 (ko) | 2008-09-30 | 2009-09-16 | 표면 처리 장치 |
TW098131977A TW201021627A (en) | 2008-09-30 | 2009-09-22 | Surface treatment apparatus |
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JP2008252334A JP4486146B2 (ja) | 2008-09-30 | 2008-09-30 | 表面処理装置 |
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JP2010087079A true JP2010087079A (ja) | 2010-04-15 |
JP4486146B2 JP4486146B2 (ja) | 2010-06-23 |
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JP2008252334A Active JP4486146B2 (ja) | 2008-09-30 | 2008-09-30 | 表面処理装置 |
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US (1) | US20110209829A1 (ja) |
JP (1) | JP4486146B2 (ja) |
KR (1) | KR101045486B1 (ja) |
CN (1) | CN102165566B (ja) |
TW (1) | TW201021627A (ja) |
WO (1) | WO2010038372A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011142233A1 (ja) * | 2010-05-11 | 2011-11-17 | シャープ株式会社 | クリーンルーム |
JP2013214745A (ja) * | 2012-03-30 | 2013-10-17 | Semes Co Ltd | 基板処理装置及び方法 |
KR20140092708A (ko) * | 2013-01-16 | 2014-07-24 | 주식회사 잉크테크 | 습식 공정 챔버 및 이를 포함하는 습식 공정 장치 |
KR101452316B1 (ko) * | 2012-03-30 | 2014-10-22 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6020483B2 (ja) * | 2014-02-14 | 2016-11-02 | トヨタ自動車株式会社 | 表面処理装置と表面処理方法 |
JP6700605B2 (ja) * | 2016-11-16 | 2020-05-27 | 日本電気硝子株式会社 | ガラス基板の製造方法 |
CN107833830B (zh) * | 2017-11-22 | 2021-03-12 | 上海华力微电子有限公司 | 一种改善一体化刻蚀聚集残留缺陷的方法 |
JP7125332B2 (ja) * | 2018-11-14 | 2022-08-24 | 株式会社ディスコ | スラッジ乾燥装置 |
Citations (3)
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JPH05235520A (ja) * | 1992-02-20 | 1993-09-10 | Matsushita Electric Works Ltd | 回路用基板のプラズマ処理方法 |
JP2005005579A (ja) * | 2003-06-13 | 2005-01-06 | Sharp Corp | プラズマ処理装置 |
JP2006164683A (ja) * | 2004-12-06 | 2006-06-22 | Sharp Corp | インライン型プラズマ処理装置 |
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- 2009-09-16 CN CN2009801381737A patent/CN102165566B/zh not_active Expired - Fee Related
- 2009-09-16 US US13/003,161 patent/US20110209829A1/en not_active Abandoned
- 2009-09-16 WO PCT/JP2009/004634 patent/WO2010038372A1/ja active Application Filing
- 2009-09-22 TW TW098131977A patent/TW201021627A/zh unknown
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011142233A1 (ja) * | 2010-05-11 | 2011-11-17 | シャープ株式会社 | クリーンルーム |
JP2013214745A (ja) * | 2012-03-30 | 2013-10-17 | Semes Co Ltd | 基板処理装置及び方法 |
KR101452316B1 (ko) * | 2012-03-30 | 2014-10-22 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR20140092708A (ko) * | 2013-01-16 | 2014-07-24 | 주식회사 잉크테크 | 습식 공정 챔버 및 이를 포함하는 습식 공정 장치 |
KR101654293B1 (ko) * | 2013-01-16 | 2016-09-06 | 주식회사 잉크테크 | 습식 공정 챔버 및 이를 포함하는 습식 공정 장치 |
Also Published As
Publication number | Publication date |
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WO2010038372A1 (ja) | 2010-04-08 |
US20110209829A1 (en) | 2011-09-01 |
JP4486146B2 (ja) | 2010-06-23 |
TW201021627A (en) | 2010-06-01 |
KR101045486B1 (ko) | 2011-06-30 |
KR20110040992A (ko) | 2011-04-20 |
CN102165566B (zh) | 2012-11-21 |
CN102165566A (zh) | 2011-08-24 |
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