201021627 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種使處理氣體與被處理物之表面接觸， 以處理被處理物之表面的裝置，特別係關於一種適合於使 用具有有毒性或腐蝕性之處理氣體之處理的表面處理裝 置。 【先前技術】 對玻璃基板或半導體晶圓等被處理物噴附處理氣體而進 行蝕刻、清洗、表面改質、成膜等表面處理的裝置為公知 者。此種表面處理所使用之處理氣體中，含有一旦洩漏至 外部會不利於安全或環境之成分之情形並不在少數。因 此，一般而言係利用處理槽（腔室）包圍處理空間，以防止 處理氣體向外部洩漏。 專利文獻1、2之表面處理裝置中，於處理槽（腔室）設置 有導入被處理物之入口、及導出被處理物之出口。入口及 出口成為狹縫狀。於處理槽之兩端設置有緩和室，以緩和 電漿生成氣體之流出及外氣向處理槽内之流入。處理槽之 内部之氣體自排氣口排出。 專利文獻3之表面處理裝置包括包圍放電電漿發生部之 内槽、及包圍該内槽之外槽。外槽與内槽之間之空間的内 壓低於内槽之内壓，且低於外氣壓。其結果處理氣體會 自内槽流出至外槽與内槽之間的空間，且外氣會流入至外 槽。 [先前技術文獻] 143256.doc 201021627 [專利文獻] [專利文獻1]曰本專利第4058857號公報（圖9) [專利文獻2]日本專利第3994596號公報（圖7) [專利文獻3]曰本專利特開2003-142298號公報 ^ 【發明内容】 “ [發明所欲解決之問題] 處理槽上必需有使被處理物進出之開口。處理槽内之處 ❹ 理氣體亦有可能自該開口洩漏。為了防止如此之洩漏，考 慮有將排氣系統連接於處理槽，並自處理槽進行排氣。藉 此，可使上述開口處之氣體之流動自處理槽之外部朝向處 理槽之内部。然而’來自上述開口之流入氣體容易變為蒼 流。於是’處理槽内之氣體分布變得不穩定。又，當處理 槽之外部之外氣發生擾亂時，該擾亂有時亦會經由上述開 口而傳播至處理槽之内部。發明者確認到當於上述開口之 外側形成渦流時，上述開口之内部之氣體成為旋渦而自上 φ 述開口漏出至外部的現象。 本發明係有鑒於上述情形而完成者，其目的在於使設置 於表面處理用之處理槽上的被處理物之進出用之開口處之 氣體的流動穩定。 [解決問題之技術手段] 種表面處理裝置，其係 i而處理上述表面之裝 為了解決上述問題，本發明係一牙 使處理氣體與被處理物之表面接觸 置’其特徵在於包含： 處理槽， 其包含將被處理物沿搬送方向搬入或搬出之開 143256.doc 201021627 口，且内部設置有進行上述表面處理之處理空間； 供給系統，其向上述處理空間供給處理氣體；以及 排氣系統，其自上述處理槽之内部排出氣體；且 上述處理槽之上述開口係藉由於與上述搬送方向正交之 對向方向上隔開對向距離而彼此對向之一對整流面所二 出來，上述開口之沿上述搬送方向之深度為上述對向距： 之2倍以l·。 Φ 藉由排氣系統之排氣，可於上述開σ處形成自外 處理槽之内部之氣體流動。藉此，可防止處理氣體自 開口漏出至外部。此外’可藉由一對整流面，使自上述開 口流入至處理槽内之氣體之流動穩定化，且可防止、力 體變成紊流’或者可使流入氣體接近為層流。因此广可： 處理槽内進而將處理空間之氣體分布敎化。藉此，可破 保表面處理之穩定性。又，可防止處理槽之内部受到外部 :影響。例如當於處理槽之外部發生渴流等之氣體之擾亂 日’’可防止該擾亂經由開口而傳播至處理槽之内部，從 可防止處理槽之内部之氣體成為渴流等並通過 漏出至外部。進而，φ τ*- 之氣體之· 了更確實地防止處理氣體或已經處理 更好的是上述開口之深度為上述對向距離之6〜1〇倍 此，可更確實地使開口處之氣體流穩定化。 σ藉 較好的是上述開口之形狀為長方形。 ==距離視情形而有所不同之情形時，對 係疋義為平均值。較好的是，上述開口之深度為上述對向 I43256.doc -6 - 201021627 距離之平均值之2倍以上，更好的是，上述開口之深度為 上述對向距離之平均值之6〜10倍。 [發明之效果] 根據本發明’可使被處理物之搬入或搬出用之開口處之 氣體之流動穩定。進而，可防止處理槽内之氣體分布發生 變動’從而可確保表面處理之穩定性。 【實施方式】 以下’說明本發明之實施形態。 圖1係表示本發明之第1實施形態。本實施形態之被處理 物9係由平板顯示器用之玻璃基板所構成，但本發明並不 限定於此，例如可適用於半導體晶圓、連續片材狀之樹脂 薄膜等各種被處理物。本實施形態之表面處理内容為玻璃 基板9之表面所覆膜之矽（省略圖示）之蝕刻，但本發明並不 限疋於此亦可適用於氧化發或氮化石夕之姑刻，但不限於 蝕刻，亦可適用於成膜、清洗、疏水化、親水化等各種表 面處理。 再者，包含平板顯示器用玻璃基板之被處理物9之長度 (圖1之左右方向之尺寸）例如為1500 mm，寬度（與圖丨之紙 面正交之方向之尺寸）例如為11〇〇 mm左右，厚度例如為 0.7 mm左右。 如圖1所示，表面處理裝置丨包括處理槽1〇、搬送機構 20、供給系統30及排氣系統4〇。 處理槽10成為内部可配置被處理物9之大小之容器狀。 於處理槽1G之内部之大致中央部形成有處理空_。換言 143256.doc 201021627 之，處理槽ίο包圍處理空間19。處理空間19係被劃分於後 述之供給噴嘴33、及應配置於該供給喷嘴33之下方之被處 理物9之間。再者，圖中，處理空間19之厚度（上下方向之 尺寸）係被誇大表示。實際之處理空間19之厚度為〇 5〜$ mm左右。 於處理槽1〇之一端側（圖丨中右側）之壁丨丨形成有搬入開口 13。於處理槽10之他端側（圖！中左侧）之壁12形成有搬:開 口 14。搬入搬出開口 13、14係沿與圖丨之紙面正交之方向 延伸。被處理物9可通過搬入搬出開口 13、14而進出於處 理槽10°搬人搬出開口13、14始終為打開。於處理槽1〇上 設置有將搬入搬出開口13、14開閉之門。關於搬入搬出開 口 13、14之構造以下將進一步進行詳細說明。 搬送機構20由輥式輸送機所構成。輥式輸送機之多個輥 21係將轴線朝向與圖!之紙面正交之方向，左右空開間隔 而排列。輥式輸送機20之一部分配置於處理槽1〇之内部。 被處理物9载置於輥21之上’於圖i中自右方向朝左方向 (搬送方向）搬送，通過搬入開口 13而被搬入至處理槽内 並配置於處理空間19内，然後，通過搬出開口㈣自處理 槽10搬出。 一搬送機構20不限於輥式輸送機，亦可由移動式載台、懸 浮載台、機械臂等所構成。 供給系統30包括原料氣體供給部31及供給喷嘴33。供給 路徑32自原料氣體供給部31延伸。供給路徑32連接於供^ 噴嘴33。供給喷嘴33配置於處理槽1〇之頂部。雖省略詳細 143256.doc -8 - 201021627 圖不，但供給噴嘴33係沿與圖i之紙面正交之方向而延伸 為稍長於被處理物9之同方向尺寸。 供給系統30將包含與處理内容相應之反應成分或該反應 成分之原料成分等之處理氣體供給至處理空間19。處理氣 體成分（上述反應成分、原料成分等）具有環境負荷性、有 毒性、腐蝕性之情形不在少數。與矽之蝕刻相關之本實施 形態中，作為反應成分，係使用氟系反應成分與氧化性反 φ 應成分。作為氟系反應成分，可列舉HF、COF2、氟自由 基等。氟系反應成分例如可於將氟系原料以水（h2〇)加濕 後，藉由電漿化（包含分解、激發、活性化、離子化等）而 生成。本實施形態中，作為氟系原料係使用。作為氟 系原料，亦可代替CF4，而使用c^6、c3f8、c3f8等其他 PFC(全氟碳），亦可使用chF3、CHA、CHsF等HFC(氫氟 碳）’亦可使用SF6、NF3、XA等PFC及HFC以外之含氟化 合物。 • 氟系原料亦可利用稀釋氣體進行稀釋。作為稀釋氣體， 例如使用A r、H e等稀有氣體或N 2。作為氟系原料之添加 劑，亦可代替水（KhO) ’而使用醇等含〇H基之化合物。 作為氧化性反應成分，可列舉〇3、〇自由基等。本實施 形態中，作為氧化性反應成分，係使用03。03能以氧（02) 作為原料而利用臭氧發生器生成。亦可藉由將02等氧系原 料電漿化而生成氧化性反應成分。 上述氟系原料或氧系原料之電漿化，可藉由向電漿生成 裝置之一對電極之間之電漿空間導入包含上述原料之氣體 143256.doc 201021627 執灯上述電漿化較好的是於大氣麼附近執行。此處， 所謂大氣壓附近，係指U13XH)4〜5〇.663xl()4以之範圍， 考慮到壓力調整之容易化或裝置構成之簡化，較好的是201021627 VI. Description of the Invention: [Technical Field] The present invention relates to a device for contacting a processing gas with a surface of a workpiece to treat the surface of the object to be treated, in particular, a toxic or A surface treatment device for the treatment of corrosive process gases. [Prior Art] A device for performing a surface treatment such as etching, cleaning, surface modification, or film formation by spraying a processing gas onto a workpiece such as a glass substrate or a semiconductor wafer is known. It is not uncommon for the treatment gas used in such surface treatment to contain a component which is unfavorable to safety or the environment once it leaks to the outside. Therefore, in general, the processing space is surrounded by a processing tank (chamber) to prevent the processing gas from leaking to the outside. In the surface treatment apparatuses of Patent Documents 1 and 2, an inlet for introducing a workpiece and an outlet for guiding the workpiece are provided in the treatment tank (chamber). The inlet and outlet are slit-shaped. A mitigation chamber is disposed at both ends of the treatment tank to alleviate the outflow of the plasma generated gas and the inflow of the external gas into the treatment tank. The gas inside the treatment tank is discharged from the exhaust port. The surface treatment apparatus of Patent Document 3 includes an inner groove surrounding the discharge plasma generating portion and a groove surrounding the inner groove. The internal pressure of the space between the outer tank and the inner tank is lower than the inner pressure of the inner tank and lower than the outer air pressure. As a result, the process gas flows out from the inner tank to the space between the outer tank and the inner tank, and the outside air flows into the outer tank. [Patent Document 1] Japanese Patent No. 3,049,596 (FIG. 7) [Patent Document 3] [Patent Document 3] 曰 专利 2010 2010 2010 143 143 143 143 143 143 143 143 143 143 58 58 58 58 58 58 58 399 399 399 399 399 399 [Patent No. 2003-142298] [Disclosed from the Invention] "Problems to be Solved by the Invention" There must be an opening in the treatment tank for allowing the object to be treated in and out. It is also possible that the treatment gas in the treatment tank is from the opening. In order to prevent such leakage, it is considered that the exhaust system is connected to the treatment tank and is exhausted from the treatment tank, whereby the flow of the gas at the opening can be made from the outside of the treatment tank toward the inside of the treatment tank. However, the inflowing gas from the above opening tends to become a bleed. Thus, the distribution of the gas in the treatment tank becomes unstable. Moreover, when the gas outside the treatment tank is disturbed, the disturbance sometimes passes through the opening. In the inside of the processing tank, the inventors have confirmed that when the eddy current is formed on the outer side of the opening, the gas inside the opening becomes a vortex and leaks from the upper φ opening to the outside. The present invention has been made in view of the above circumstances, and an object thereof is to stabilize the flow of gas at an opening for entering and exiting a workpiece to be processed in a treatment tank for surface treatment. [Technical means for solving the problem] In order to solve the above problems, the present invention relates to a method in which the processing gas is brought into contact with the surface of the object to be treated, and is characterized in that it comprises: a processing tank including the object to be processed in the conveying direction Loading or unloading opening 143256.doc 201021627, and internally providing a processing space for performing the above surface treatment; a supply system for supplying a processing gas to the processing space; and an exhaust system for discharging gas from the inside of the processing tank; And the opening of the processing tank is separated by a pair of rectifying surfaces which are opposed to each other by an opposing distance in a direction perpendicular to the conveying direction, and the depth of the opening in the conveying direction is the Opposite distance: 2 times in l·. Φ By the exhaust of the exhaust system, it can be formed from the outer treatment groove at the above-mentioned opening σ The gas flow in the portion prevents leakage of the process gas from the opening to the outside. In addition, the flow of the gas flowing into the treatment tank from the opening can be stabilized by a pair of rectifying surfaces, and the force can be prevented. It becomes a turbulent flow or can make the inflowing gas close to a laminar flow. Therefore, it is possible to: the treatment gas in the treatment tank further degenerates the gas distribution in the treatment space. Thereby, the stability of the surface treatment can be broken. Further, the treatment tank can be prevented. The inside is externally affected: for example, when a gas disturbance such as a thirst flow occurs outside the treatment tank, the disturbance can be prevented from propagating through the opening to the inside of the treatment tank, and the gas inside the treatment tank can be prevented from becoming a thirsty flow. And the gas is leaked to the outside. Further, the gas of φ τ*- is more surely prevented from being treated or treated better. The depth of the opening is 6 to 1 times the above-mentioned opposing distance, and more The gas flow at the opening is surely stabilized. Preferably, the shape of the opening is a rectangle. == When the distance is different depending on the situation, the system is the average value. Preferably, the depth of the opening is more than twice the average of the distances of the opposite I43256.doc -6 - 201021627. More preferably, the depth of the opening is 6 to 10 of the average of the opposite distances. Times. [Effects of the Invention] According to the present invention, the flow of the gas at the opening for carrying in or out of the workpiece can be stabilized. Further, it is possible to prevent the gas distribution in the treatment tank from fluctuating, thereby ensuring the stability of the surface treatment. [Embodiment] Hereinafter, embodiments of the present invention will be described. Fig. 1 shows a first embodiment of the present invention. The object to be processed 9 of the present embodiment is composed of a glass substrate for a flat panel display. However, the present invention is not limited thereto, and can be applied to, for example, a semiconductor wafer or a continuous sheet-like resin film. The surface treatment content of the present embodiment is etching of a film (not shown) on the surface of the glass substrate 9. However, the present invention is not limited thereto, and may be applied to an oxidized hair or a nitrided stone. It is not limited to etching, and can also be applied to various surface treatments such as film formation, cleaning, hydrophobization, and hydrophilization. Further, the length of the workpiece 9 including the glass substrate for a flat panel display (the dimension in the left-right direction of FIG. 1) is, for example, 1500 mm, and the width (the dimension in the direction orthogonal to the plane of the sheet) is, for example, 11 mm. The thickness is, for example, about 0.7 mm. As shown in Fig. 1, the surface treatment apparatus 丨 includes a treatment tank 1A, a conveying mechanism 20, a supply system 30, and an exhaust system 4A. The treatment tank 10 has a container shape in which the size of the workpiece 9 can be disposed inside. A processing space _ is formed in a substantially central portion of the inside of the processing tank 1G. In other words, 143256.doc 201021627, the processing slot ίο surrounds the processing space 19. The processing space 19 is divided between a supply nozzle 33 to be described later and a workpiece 9 to be disposed below the supply nozzle 33. Further, in the figure, the thickness (the size in the up and down direction) of the processing space 19 is exaggerated. The actual processing space 19 has a thickness of about 〜 5 to $ mm. A loading opening 13 is formed in the wall of one end side of the processing tank 1 (the right side in the figure). A wall 12 is formed on the wall 12 of the other end side of the processing tank 10 (the left side in the figure!). The loading/unloading openings 13 and 14 extend in a direction orthogonal to the plane of the drawing. The workpiece 9 can be moved into the processing tank 10 by loading and unloading the openings 13 and 14. The moving and unloading openings 13 and 14 are always opened. A door for opening and closing the loading/unloading openings 13 and 14 is provided in the processing tank 1A. The structure of the loading/unloading openings 13 and 14 will be described in further detail below. The conveying mechanism 20 is constituted by a roller conveyor. The plurality of rollers 21 of the roller conveyor are arranged such that the axes are oriented in a direction orthogonal to the plane of the paper of Fig. One of the roller conveyors 20 is disposed inside the processing tank 1〇. The workpiece 9 is placed on the roll 21 and transported from the right direction to the left direction (transport direction) in FIG. i, and is carried into the processing tank through the carry-in opening 13 and placed in the processing space 19, and then passed through The carry-out opening (4) is carried out from the processing tank 10. The transport mechanism 20 is not limited to a roller conveyor, and may be constituted by a movable stage, a suspension stage, a robot arm or the like. The supply system 30 includes a material gas supply unit 31 and a supply nozzle 33. The supply path 32 extends from the material gas supply unit 31. The supply path 32 is connected to the supply nozzle 33. The supply nozzle 33 is disposed at the top of the processing tank 1〇. Although the detailed description of 143256.doc -8 - 201021627 is omitted, the supply nozzle 33 extends in a direction orthogonal to the plane of the paper of Fig. i to be slightly longer than the size of the object 9 in the same direction. The supply system 30 supplies a processing gas containing a reaction component corresponding to the processing content or a raw material component of the reaction component to the processing space 19. The handling of gas components (the above-mentioned reaction components, raw material components, etc.) is environmentally hazardous, toxic, and corrosive. In the present embodiment relating to etching of tantalum, a fluorine-based reaction component and an oxidizing anti-φ component are used as a reaction component. Examples of the fluorine-based reaction component include HF, COF 2, and a fluorine radical. The fluorine-based reaction component can be produced, for example, by humidifying water (h2〇) and then plasma-forming (including decomposition, excitation, activation, ionization, etc.). In the present embodiment, it is used as a fluorine-based raw material. As the fluorine-based raw material, other PFCs (perfluorocarbons) such as c^6, c3f8, and c3f8 may be used instead of CF4, and HFC (hydrofluorocarbon) such as chF3, CHA, or CHsF may be used. SF6 and NF3 may also be used. Fluorine compounds other than PFC and HFC such as XA. • Fluorine-based materials can also be diluted with a diluent gas. As the diluent gas, for example, a rare gas such as Ar or He or N 2 is used. As the additive for the fluorine-based raw material, a compound containing a ruthenium H group such as an alcohol may be used instead of water (KhO)'. Examples of the oxidative reaction component include ruthenium 3 and anthracene radical. In the present embodiment, as the oxidative reaction component, 03.03 can be produced by using an ozone generator using oxygen (02) as a raw material. An oxidative reaction component can also be produced by slurrying an oxygen-based raw material such as 02. The plasma of the fluorine-based raw material or the oxygen-based raw material can be introduced into the plasma space between the electrodes of one of the plasma generating devices by introducing the gas containing the raw material 143256.doc 201021627 It is performed near the atmosphere. Here, the term "atmospheric pressure" refers to the range of U13XH)4~5〇.663xl()4, and it is preferable to consider the ease of pressure adjustment or the simplification of the device configuration.
Pa ’更好的是 9 33ixigMg 397χΐ〇4Pa ’ is better 9 33ixigMg 397χΐ〇4
Pa ° 石夕之蝕刻相關之本實施形態中’於原料氣體供給部3i 令，利用Ar稀釋氟系原料之CF4，且添加H2〇，從而獲得 氟系原料氣體（CF4+Ar+H2〇)。將該氟系原料氣體經供給路 仏32而導入至供給噴嘴33。供給噴嘴^上設置有一對電 極。於該電極間將氟系原料氣體電漿化。供給喷嘴33兼作 電漿生成裝置。藉此’ ±成HF等氟系反應成分。雖省略圖 示，但另外利用臭氧發生器生成〇3作為氧化性反應成分而 導入至供給噴嘴33，從而與上述電漿化後之氣體混合。藉 此生成包含氟系反應成分（HF等）與氧化性反應成分（〇3 等）之處理氣體。當然’處理氣體中亦包含原料氣體成分 (CF4、仏〇、Ar、〇2等）。該處理氣體自供給喷嘴33之底面 (前端面）向處理空間19噴出。處理氣體之供給流量例如為 32 slm左右。 再者，亦可於氣體供給部31中生成包含氟系反應成分與 氧化性反應成分之處理氣體，藉由供給路徑32將該處理氣 體送至供給喷嘴33後噴出。 自供給噴嘴33噴出之處理氣體被噴附於處理空間19之被 處理物9上，被處理物9受到表面處理。矽之蝕刻中係藉由 處理氣體中之氧化性成分（〇3等）而將矽氧化，從而氧化矽 143256.doc •10- 201021627 與處理氣體中之氟系反應成分（HF等）發生反應，而生成揮 發成分之S1F4。藉此，可去除被處理物9之表面之矽層。 其次說明排氣系統40。於處理槽1〇之底部之例如大致中 央部設置有排氣口43 ^排氣路徑42自排氣口43延伸。排氣 路後42上依序設置著過濾器部45與排氣泵“。雖省略圖 .不，但於供給喷嘴33之底面上與處理氣體之喷出口鄰接而 形成有局部排氣口。與該局部排氣口相連之抽吸路徑自供 ❹ 給喷嘴33之上部被引出。該抽吸路徑與過濾器部45之更上 游側（排氣口 43侧）之排氣路徑42合流。上述局部排氣口及 抽吸路徑亦構成排氣系統4〇之要素。 過濾器部45除了包含去除排出氣體中之塵埃等之過濾器 之外，亦包含去除排出氣體中之HF等之洗氣器、去除排出 氣體中之He之捕霧器、及去除排氣體中之〇3之臭氧分解 器等。 藉由排氣泵41(排氣機構）之驅動，將處理槽1〇内之氣體 ❹ 自排氣口 43吸入至排氣路徑42。又，於處理空間丨9内喷附 於被處理物9上之後之處理氣體（以下稱作「已經處理之氣 體」），主要被吸入至上述局部排氣口，並經由上述抽吸 路徑而與排氣路徑42合流。已經處理之氣體包含處理氣體 之成分（HF、〇3、CF4、HW、Ar等）或表面處理反應所引 起之副生成物（S〖F4等）。已經處理之氣體之一部分有時亦 會自處理空間19沒漏，此種已經處理之氣體自排氣口 “吸 入0 排氣系統40之排出氣體流量係設定處理槽10内之氣體不 143256.doc 201021627In the present embodiment, the raw material gas supply unit 3i is used to dilute the CF4 of the fluorine-based raw material with Ar, and H2 is added to obtain a fluorine-based raw material gas (CF4+Ar+H2〇). This fluorine-based material gas is introduced into the supply nozzle 33 through the supply path 32. A pair of electrodes are provided on the supply nozzle ^. A fluorine-based source gas is plasmad between the electrodes. The supply nozzle 33 also serves as a plasma generating device. Thereby, it is made into a fluorine-based reaction component such as HF. Although the illustration is omitted, the krypton 3 is generated as an oxidative reaction component by the ozone generator, and introduced into the supply nozzle 33 to be mixed with the plasma after the plasma. Thereby, a processing gas containing a fluorine-based reaction component (HF or the like) and an oxidizing reaction component (〇3 or the like) is produced. Of course, the process gas also contains a raw material gas component (CF4, ruthenium, Ar, ruthenium 2, etc.). This processing gas is ejected from the bottom surface (front end surface) of the supply nozzle 33 to the processing space 19. The supply flow rate of the processing gas is, for example, about 32 slm. Further, a processing gas containing a fluorine-based reaction component and an oxidizing reaction component may be generated in the gas supply unit 31, and the processing gas may be sent to the supply nozzle 33 through the supply path 32 to be ejected. The processing gas ejected from the supply nozzle 33 is ejected onto the workpiece 9 in the processing space 19, and the workpiece 9 is subjected to surface treatment. In the etching of ruthenium, the ruthenium is oxidized by the oxidizing component (〇3, etc.) in the treatment gas, so that the ruthenium oxide 143256.doc •10-201021627 reacts with the fluorine-based reaction component (HF or the like) in the treatment gas. And the volatile component S1F4 is produced. Thereby, the ruthenium layer on the surface of the workpiece 9 can be removed. Next, the exhaust system 40 will be described. For example, a substantially central portion of the bottom of the treatment tank 1 is provided with an exhaust port 43. The exhaust path 42 extends from the exhaust port 43. The filter unit 45 and the exhaust pump are sequentially disposed in the exhaust passage 42. Although not shown, a partial exhaust port is formed adjacent to the discharge port of the processing gas on the bottom surface of the supply nozzle 33. The suction path to which the partial exhaust port is connected is taken out from the upper portion of the supply nozzle 33. The suction path merges with the exhaust path 42 on the upstream side (the exhaust port 43 side) of the filter portion 45. The gas port and the suction path also constitute an element of the exhaust system 4. The filter unit 45 includes a filter for removing HF or the like in the exhaust gas, and a filter for removing the dust in the exhaust gas. a mist trapper for discharging He in the gas, an ozone decomposer for removing the helium 3 in the exhaust gas, etc. The gas in the treatment tank 1 is exhausted by the driving of the exhaust pump 41 (exhaust mechanism) The port 43 is sucked into the exhaust path 42. Further, the process gas (hereinafter referred to as "processed gas") after being sprayed on the workpiece 9 in the processing space 9 is mainly sucked into the above-mentioned local exhaust port. And the exhaust path 42 via the suction path described above Flow. The gas that has been treated contains components (HF, 〇3, CF4, HW, Ar, etc.) of the processing gas or by-products (S, F4, etc.) caused by the surface treatment reaction. Some of the treated gas sometimes leaks from the processing space 19, and the treated gas is exhausted from the exhaust port. The exhaust gas flow rate of the exhaust system 40 is set to be 143256.doc. 201021627
會自搬入搬出開口 13、M Λ漏之程度之少量。為了使氣 不會自搬入搬出開口 13 “史轧體 洩漏，將排出氣體流量設定得 大於處理氣體之供给流量，^ 從而處理槽1 〇之外部之環境氧 體（空氣）自搬入搬出開σ1 ” 丄也 13 14向處理槽10之内部流入。 本實施形態中’如上述般虚 处里乳體之供給流量為32 sim& 右，與此相對，第1排出糸 〇ΛΛ ^ 出系統40之排出氣體流量例如為 200〜400 slm左右。 因此’排氣系統4 〇之排屮盔雜^丄 出乳體之大部分為空氣。排出氣 體中’比例最大之成分為氮。 ^乱排出氣體中進而包含已經處 理之氣體之成分（HF、〇3、cf、只η Α 3 、Η2〇、Ar、SiF4 等）。 表面處理裝置1中進而包括再利用部50。再利用部50自 利用排氣系、統40排氣之氣體中回收處理氣體之反應成分。 若進行詳細說明，則再利用卹、社 丹⑺用4 50包括分離回收器5丨。分離 回收器51上設置有分離膜μ。益a八# 力刀雕胰S2。藉由分離膜52將分離回收器 之内部分隔為濃縮室53與稀釋室⑷作為分離膜52,例 如係使用玻璃狀聚合物膜（參照日本專利第3ΐ5ιΐ5ΐ號公報 等）。分離膜52使CF4(反應成分）透過之速度相對較小，使 氮（雜質）透過之速度相對較大。排氣泵41之更下游側之排 氣路徑42與濃縮室53連通。來自排氣泵41之排出氣體被導 入至濃縮室53，並被分離為藉由分離膜52而滯留於濃縮室 53内之回收氣體與透過分離膜52而進入至稀釋室54内之放 出孤體。回收氣體係CF4》辰度較南（CF4=90 vol%以上），且 流里較小。放出氣體係CF4濃度較低（CF4 = 1 vol%以下），且 流量較大。 I43256.doc -12- 201021627 再者’圖中僅圖示有一個分離回收器5 1，但再利用系統 50亦可包含複數個分離回收器51。複數個分離回收器51可 串聯地相連’亦可並聯地相連，亦能以串聯與並聯組·人的 ^ 方式相連。 回收路徑55自濃縮室53之下游端延伸。回收路徑55連接 於原料氣體供給部3 1。 放出路徑46自稀釋室54延伸。放出路程46連接於除宝設 備47。 Φ 對處理槽10之搬入搬出開口 13、14之構造進行詳細說 明。 如圖2及圖3所示，於搬入側壁11上形成有開口部16。開 口部16係成為沿搬入側壁n之寬度方向（圖2之左右方向、 圖3之紙面正交方向）延伸之狹縫狀。 於搬入側壁11安裝有上下成為一對之整流板15、15。以 下 S將上下之整流板15彼此區分時，係對上側之整流板 φ 15之符號標註「A」，對下側之整流板1 5之符號標註 「B」。 如圖3所示’上侧之整流板15A被分為兩個上側整流板部 15a、15a °如圖2所，各整流板部15a、i5a成為沿搬入側 壁11之寬度方向延伸之較細之平板狀。如圖3所示，兩個 上側整流板部1 5a、15a自外側（圖3中右）與内侧（圖3中左） 夾持搬入側壁11之開口部16之更上侧之部分◎上側整流板 部15a、15a之下面與開口部16之上端緣形成為一面。藉由 彼此形成為一面之上侧整流板部15a、15&之下面及開口部 143256.doc -13- 201021627 16之上端緣，構成上側之整流面17。上側整流面17係沿搬 入側壁11之寬度方向水平地延伸。 下側之整流板15B被分為兩個下側整流板部15b、15b。 如圖2所示，各整流板部15b、15b成為沿搬入側壁11之寬 度方向延伸之較細之平板狀。如圖3所示，兩個下側整流 板部1 5b、15b係自外·側（圖3中右）與内側（圖3中左）夾持住 搬入側壁11之開口部16之更下側之部分。下侧整流板部 l5b、15b之上面與開口部16之下端緣形成為一面。藉由彼 此形成為一面之下側整流板部15b、15b之上面及開口部i 6 之下端緣’構成下側整流面18。下側整流面18係沿搬入側 壁11之寬度方向水平地延伸。 上側整流面17與下側整流面18彼此呈平行，且上下（與 被處理物9之搬送方向（圖3之左右方向）正交之對向方向）對 向。於一對整流面1 7、1 8之間形成有搬入開口丨3。上側整 流面17限定開口 13之上緣。下側整流面18限定開口 13之下 緣。 整流面17、18之沿被處理物9之搬送方向（圖3之左右方 向）之長度L、進而開口 13之沿搬送方向之深度L ,為整流 面17、18之對向距離D、進而開口 13之上下之厚度〇之2倍 以上（Lg2xD)，較好的是6倍以上（Lg6xD)。開口 13之深 度L之上限係考慮整流板15之安裝性及與輥2ι之干涉等而 適當設定。開口 13之深度L之上限較好的是對向距離D之 倍左右’更好的是1〇倍左右。 本實施形態巾’㈣面17、18之對向距離_開口 13之 143256.doc •14· 201021627 厚度D，例如為D=5 mm左右。因此，開口 13之深度乙為 L=10 mm以上’較好的是30 mm以上。 雖省略詳細圖示，但關於搬出開口 14亦成為與搬入開口 13相同之構造。即，於搬出侧壁12形成有開口部16，該開 口部16上安裝有整流板15，且形成有上下對向之一對整流 ' 面17、18，將搬出開口 14限定於該等整流面17、18之間。 搬出開口 14之深度L為厚度〇之2倍以上，較好的是6倍以 上。 根據上述構成之表面處理裝置1，藉由搬送機構2〇將被 處理物9自搬入開口 I3搬入至處理槽1〇之内部，並導入至 處理空間19。又，藉由供給系統3〇將處理氣體供給至處理 空間19〇該處理氣體與被處理物9接觸，而執行蝕刻等表 面處理。將處理後之被處理物9通過搬出開口 14而自處理 槽1〇搬出。將複數個被處理物9於輥式輸送機2〇上空開間 隔而排成一行，並於依序搬入至處理槽1〇内進行表面處理 ❹ 之後 ，自處理槽10搬出。 與處理氣體之供給並行地藉由排氣系統4〇排出處理槽1〇 内之氣體（包含處理空間19之已經處理之氣體）。藉由該排 氣，處理槽10之外部之氣體通過搬入搬出開口 13、14後流 •入至處理槽1〇之内部。因此，可使搬入搬出開口 13、14内 之氣體之流動自外側朝向内側（處理槽丨〇内）之方向。藉 此，可防止處理槽10内之處理氣體或已經處理之氣體自搬 入搬出開口 13、14向外部洩漏。 且，搬入搬出開口 13、14之深度L·為厚度ϋ之2倍以上 I43256.doc •15- 201021627 因此可使自搬入 ’從而可防止流 態接近為層流。 進而，可使處理 可確保表面處理 (L2 2xD)，較好的是6倍以上（Lg 6χ〇)， 搬出開口 13、14流入之氣體之流動穩定化 入氣體變為紊流。或者可使流入氣體之狀 因此，可使處理槽1 〇之氣體分布穩定化。 空間19之處理氣體之流動穩定化。藉此， 之穩定性。又，可防止處理槽1G之内部受到外部之影響 例如，當於處理槽10之外部產生渴流等之氣體之擾亂時 可防止該擾亂經由#口13、14而傳播至處理槽1〇之内部， 從而可防止處理槽10之内部之氣體變為渴流等而自開口 13、14向外洩漏。進而’可更確實地防止處理氣體或已經 處理之氣體之洩漏。 藉由排氣系統40自處理槽1 〇内排出之氣體經過濾器部45 過濾之後，受到排氣泵41壓縮，而導入至分離回收器5 i。 分離回收器5 1令，將排出氣體分離為高Cf4濃度之回收氣 體與低CF4濃度之放出氣體。回收氣體經由回收路徑“而 被輸送至原料氣體供給部31。藉此，將由分離回收器51回 收之反應成分（CF4)返送至回收路徑55内，從而可再利 用。因此，可減少表面處理裝置1之Cf4之總使用量，從而 可抑制運轉成本。放出氣體被送至放出路徑46並經除害設 備47進行除害處理之後，向大氣中放出。 排氣系統40之排氣流量為經處理之氣體不會自搬入搬出 開口 13、14洩漏之程度之少量。因此，可減輕分離回收器 5 1之負荷。又’亦可減輕除害設備47之負荷。藉此，可使 分離回收器51及除害設備47小型化。 143256.doc -16· 201021627 其次’說明本發明之其他實施形態。以下之實施形態 中’關於與已述之形態重複之構成，於圖式中標註相同符 號並省略說明。 圖4係表示搬入搬出開口之變形例。該變形例中，上下 之各整流板15未被分隔為整流板部15a、15b，而是成為一 體之平板狀。上側之整流板15A係安裝於搬入側壁1]t之開 口部16之更上側部分之外側面。上側整流板15A之下面與 開口部16之上端緣形成為一面。藉由彼此形成為一面之上 側整流板15A之下面及開口部16之上端緣，構成上側整流 面17。 下側之整流板15B安裝於搬入側壁11之開口部1 6之更下 側部分之外側面。下側整流板15B之上面與開口部16之下 端緣形成為一面。藉由彼此形成為一面之下側整流板15B 之上面及開口部16之下端緣，構成下側整流面18。 雖然省略圖示，但關於搬出侧壁12之整流板15亦與圖4 所示之搬入側壁11之整流板15相同。 搬入搬出開口 13 ' 14之深度L為厚度〇之2倍以上 (LghD)，較好的是6倍以上（Lg6xD)，關於這一點與第1 實施形態相同。再者，亦可使整流板15以不自壁u、12之 外侧面而是自壁11、12之内側面向處理槽1〇之内部突出之 方式安裝。 圖5係表示搬入搬出開口之其他變形例。該變形例中， 搬入側壁11之開π部16係比已述之實施形態（圖3、圖句沿 上下更大地打開。上下之各整流板15成為一體之平板狀。 143256.doc •17· 201021627 上側之整流板15 A之中央部安裝於開口部丨6之上端緣。僅 藉由上側整流板15Α之下面構成上側整流面17。下側之整 流板15Β之中央部安裝於開口部16之下端緣。僅藉由下側 整流板15Β之上面構成下側整流面18。搬入開口 13被劃分 於上下之整流板15、15間。 雖省略圖示，但關於搬出開口 14，亦與圖5所示之搬入 開口 13同樣地進行劃分。 該形態中，整流板15之沿被處理物9之搬送方向之長度 與搬入搬出開口 13、14之深度L一致。搬入搬出開口 13、 14之深度L為厚度D之2倍以上（l^2xD)，較好的是6倍以 上（L26xD)，關於這一點與已述之實施形態相同。 本發明並不限於上述實施形態，於不脫離本發明之主旨 之範圍可進行各種改變。 例如，搬入開口 1 3與搬出開口 14亦可由一個共用之開口 構成。搬送機構20亦可將被處理物9自上述共用之開口搬 入至處理槽10之内部並配置於處理空間19内’進行表面處 理後’將被處理物9自上述共用之開口向外部搬出。被處 理物9之朝向處理槽10之搬入及自處理槽1〇之搬出除了使 用搬送機構20進行之外’亦可由作業者進行。 上下之整流板15A、15B之外端部之間之位置、或内端 部之間之位置於被處理物9之搬送方向上亦可不一致。上 下之整流板15A、15B之任一方亦可比他方更朝向處理槽 1 0之外側或處理槽10之内側突出。此時，兩整流板丨5、15 143256.doc •18· 201021627 於對向方向上彼此重合之部分 <間的空間（開口 13或14)之 沿上述搬送方向之深度（L)，亦可主 4』為整流板15、15之間之 對向距離（D)的2倍以上，較好的是6倍以上。 [產業上之可利用性] 本發明例如可適用於平板顯示器(咖，_ — display)或半導體晶圓之製造。 【圖式簡單說明】A small amount of the degree of leakage from the opening and exiting openings. In order to prevent the gas from being carried into the opening and exiting opening 13, the flow rate of the exhaust gas is set to be larger than the supply flow rate of the processing gas, so that the ambient oxygen (air) outside the processing tank 1 is moved in and out σ1" The crucible 13 14 flows into the inside of the processing tank 10. In the present embodiment, the supply flow rate of the emulsion in the imaginary portion is 32 sim & right, and the discharge gas flow rate of the first discharge enthalpy system 40 is, for example, about 200 to 400 slm. Therefore, the exhaust system of the exhaust system is mostly air. The component with the largest proportion in the exhaust gas is nitrogen. The disordered exhaust gas further contains components of the treated gas (HF, 〇3, cf, η Α 3 , Η 2 〇, Ar, SiF 4 , etc.). The surface treatment apparatus 1 further includes a reuse unit 50. The recycling unit 50 recovers the reaction component of the processing gas from the gas exhausted by the exhaust system and the system 40. For detailed explanation, the re-use shirt and the social (7) use 4 50 include a separation and recovery device. The separation membrane 51 is provided on the separation and recovery unit 51. Yi a eight # force knife carving pancreas S2. The inside of the separation and recovery device is partitioned into a separation chamber 53 and a dilution chamber (4) as a separation membrane 52 by a separation membrane 52. For example, a glassy polymer membrane is used (refer to Japanese Patent No. 3, 5, 5, 5, 5, or the like). The separation membrane 52 has a relatively small rate of transmission of CF4 (reaction component), and a relatively high rate of transmission of nitrogen (impurities). The exhaust passage 42 on the downstream side of the exhaust pump 41 communicates with the concentrating chamber 53. The exhaust gas from the exhaust pump 41 is introduced into the concentrating chamber 53, and is separated into a recovered gas retained in the concentrating chamber 53 by the separation membrane 52 and a discharge eliminator that passes through the separation membrane 52 and enters into the dilution chamber 54. . The recovered gas system CF4 has a shorter degree of origin (CF4=90 vol% or more) and the flow is smaller. The concentration of CF4 in the evolved gas system is low (CF4 = 1 vol% or less) and the flow rate is large. I43256.doc -12- 201021627 Furthermore, only one separation collector 5 1 is shown in the drawing, but the recycling system 50 may also include a plurality of separation collectors 51. The plurality of separation recoverers 51 may be connected in series or may be connected in parallel, or may be connected in series and in parallel. The recovery path 55 extends from the downstream end of the concentrating chamber 53. The recovery path 55 is connected to the material gas supply unit 31. The discharge path 46 extends from the dilution chamber 54. The release path 46 is connected to the Detachment Equipment 47. Φ The structure of the loading/unloading openings 13 and 14 of the processing tank 10 will be described in detail. As shown in FIGS. 2 and 3, an opening portion 16 is formed in the loading side wall 11. The opening portion 16 is formed in a slit shape extending in the width direction of the loading side wall n (the horizontal direction in Fig. 2 and the direction perpendicular to the plane of the drawing in Fig. 3). The rectifying plates 15 and 15 which are vertically connected to each other are attached to the loading side wall 11. When the upper and lower rectifying plates 15 are distinguished from each other by the following S, the symbol of the upper rectifying plate φ 15 is marked with "A", and the lower rectifying plate 15 is marked with "B". As shown in Fig. 3, the upper rectifying plate 15A is divided into two upper rectifying plate portions 15a and 15a. As shown in Fig. 2, each of the rectifying plate portions 15a and i5a is formed to be thinner in the width direction of the loading side wall 11. Flat. As shown in Fig. 3, the two upper rectifying plate portions 15a, 15a are sandwiched from the outer side (right in Fig. 3) and the inner side (left in Fig. 3) to the upper side of the opening portion 16 of the side wall 11 The lower surface of the plate portions 15a and 15a and the upper edge of the opening portion 16 are formed on one surface. The upper side rectifying surface 17 is formed by forming the upper edges of the upper side rectifying plate portions 15a, 15 & and the upper edges of the opening portions 143256.doc - 13 - 201021627 16 . The upper rectifying surface 17 extends horizontally in the width direction of the loading side wall 11. The lower rectifying plate 15B is divided into two lower rectifying plate portions 15b and 15b. As shown in Fig. 2, each of the rectifying plate portions 15b and 15b has a thin plate shape extending in the width direction of the loading side wall 11. As shown in Fig. 3, the two lower rectifying plate portions 15b, 15b are sandwiched from the outer side (right side in Fig. 3) and the inner side (left side in Fig. 3) to the lower side of the opening portion 16 of the carrying side wall 11. Part of it. The upper surface of the lower rectifying plate portions l5b, 15b and the lower end edge of the opening portion 16 are formed on one side. The lower rectifying surface 18 is formed by the upper surface of the one side lower rectifying plate portions 15b and 15b and the lower end edge of the opening i6. The lower rectifying surface 18 extends horizontally in the width direction of the loading side wall 11. The upper rectifying surface 17 and the lower rectifying surface 18 are parallel to each other and face up and down (opposing directions orthogonal to the conveying direction of the workpiece 9 (the horizontal direction in Fig. 3)). A loading opening 丨3 is formed between the pair of rectifying surfaces 17 and 18. The upper side flow surface 17 defines the upper edge of the opening 13. The lower rectifying surface 18 defines a lower edge of the opening 13. The length L of the flow regulating surfaces 17 and 18 along the conveying direction of the workpiece 9 (the horizontal direction in FIG. 3) and the depth L of the opening 13 in the conveying direction are the opposing distances D of the rectifying surfaces 17, 18, and then the openings The thickness of the upper and lower layers of 13 is more than 2 times (Lg2xD), preferably 6 times or more (Lg6xD). The upper limit of the depth L of the opening 13 is appropriately set in consideration of the mountability of the rectifying plate 15 and the interference with the roller 2m. The upper limit of the depth L of the opening 13 is preferably about 1 times the distance D of the opposite direction D. In the present embodiment, the opposite direction of the '(4) faces 17 and 18 is 143256.doc • 14· 201021627. The thickness D is, for example, about D=5 mm. Therefore, the depth B of the opening 13 is L = 10 mm or more', preferably 30 mm or more. Although the detailed illustration is omitted, the carry-out opening 14 also has the same structure as the carry-in opening 13. That is, an opening 16 is formed in the carry-out side wall 12, and the rectifying plate 15 is attached to the opening 16, and a pair of rectifying surfaces 17 and 18 facing up and down are formed, and the unloading opening 14 is limited to the rectifying surface. Between 17,18. The depth L of the carry-out opening 14 is twice or more the thickness 〇, preferably 6 times or more. According to the surface treatment apparatus 1 having the above-described configuration, the workpiece 9 is carried into the processing tank 1 by the transport mechanism 2, and is introduced into the processing space 19. Further, the processing gas is supplied to the processing space 19 by the supply system 3, and the processing gas comes into contact with the workpiece 9, and surface treatment such as etching is performed. The processed object 9 is carried out from the processing tank 1 through the carry-out opening 14. A plurality of objects 9 to be processed are placed in a row on the roller conveyor 2, and are sequentially carried into the processing tank 1 to be surface-treated, and then carried out from the processing tank 10. The gas in the treatment tank 1 (containing the treated gas of the treatment space 19) is discharged by the exhaust system 4〇 in parallel with the supply of the process gas. By this exhaust, the gas outside the treatment tank 10 passes through the carry-in/out openings 13 and 14 and flows into the inside of the treatment tank 1〇. Therefore, the flow of the gas carried into and out of the openings 13 and 14 can be made from the outer side toward the inner side (in the processing tank). Thereby, it is possible to prevent the processing gas in the processing tank 10 or the gas that has been treated from leaking to the outside from the loading/unloading openings 13, 14. Further, the depth L· of the loading/unloading openings 13 and 14 is twice or more the thickness I I43256.doc • 15 - 201021627 Therefore, it is possible to prevent the flow from approaching to laminar flow. Further, the treatment can ensure surface treatment (L2 2xD), preferably 6 times or more (Lg 6 χ〇), and the flow of the gas flowing into the openings 13 and 14 is stabilized, and the gas becomes turbulent. Alternatively, the form of the inflowing gas can be stabilized so that the gas distribution in the treatment tank 1 can be stabilized. The flow of the process gas in the space 19 is stabilized. Thereby, the stability. Further, it is possible to prevent the inside of the treatment tank 1G from being affected by the outside. For example, when disturbance of gas such as thirsty flow is generated outside the treatment tank 10, the disturbance can be prevented from being propagated to the inside of the treatment tank 1 through the # ports 13 and 14. Thereby, it is possible to prevent the gas inside the treatment tank 10 from being thirsty or the like and leaking outward from the openings 13, 14. Further, leakage of the process gas or the gas that has been treated can be more reliably prevented. The gas discharged from the treatment tank 1 by the exhaust system 40 is filtered by the filter unit 45, and then compressed by the exhaust pump 41 to be introduced into the separation and recovery unit 5 i. The separation and recovery unit 5 1 separates the exhaust gas into a high Cf4 concentration recovery gas and a low CF4 concentration evolved gas. The recovered gas is sent to the raw material gas supply unit 31 via the recovery path. Thereby, the reaction component (CF4) recovered by the separation and recovery unit 51 is returned to the recovery path 55, and can be reused. Therefore, the surface treatment apparatus can be reduced. The total use amount of Cf4 of 1 can suppress the running cost. The released gas is sent to the discharge path 46 and is subjected to the detoxification treatment by the detoxification device 47, and then released to the atmosphere. The exhaust gas flow rate of the exhaust system 40 is processed. The gas does not leak from the loading/unloading openings 13 and 14 to a small extent. Therefore, the load of the separation and recovery unit 51 can be reduced. Further, the load of the detoxification device 47 can be reduced. Thereby, the separation and recovery device 51 can be made 51. And the other embodiments of the present invention are described in the following description. In the following embodiments, the same reference numerals are used to omit the configuration in the following embodiments, and the same reference numerals are used in the drawings. Fig. 4 is a view showing a modification of the loading/unloading opening. In this modification, the upper and lower rectifying plates 15 are not divided into the rectifying plate portions 15a and 15b, but are integrated. The upper rectifying plate 15A is attached to the outer side surface of the upper portion of the opening portion 16 of the loading side wall 1]t. The lower surface of the upper rectifying plate 15A and the upper end edge of the opening portion 16 are formed as one surface. The lower surface of the upper side rectifying plate 15A and the upper end of the opening portion 16 constitute the upper rectifying surface 17. The lower rectifying plate 15B is attached to the outer side surface of the lower portion of the opening portion 16 of the carrying side wall 11. The upper surface of the plate 15B and the lower end edge of the opening portion 16 are formed as one surface. The upper surface of the lower surface rectifying plate 15B and the lower end edge of the opening portion 16 are formed to form the lower rectifying surface 18. Although not shown, The rectifying plate 15 for carrying out the side wall 12 is also the same as the rectifying plate 15 of the carrying-in side wall 11 shown in Fig. 4. The depth L of the loading/unloading opening 13' 14 is twice or more the thickness L (LghD), preferably 6 More than this (Lg6xD), this point is the same as that of the first embodiment. Further, the rectifying plate 15 may be formed so as not to face the outer side of the walls u, 12 but from the inner side of the walls 11, 12 toward the processing tank 1 It is installed in an internal way. Figure 5 shows the loading and unloading. In another modification of the opening, in the modified example, the opening π portion 16 of the loading side wall 11 is larger than the above-described embodiment (the figure and the figure are opened more vertically). The upper and lower rectifying plates 15 are integrated into a flat plate shape. 143256.doc •17· 201021627 The central portion of the upper rectifying plate 15 A is attached to the upper edge of the opening 丨6. The upper rectifying surface 17 is formed only by the lower surface of the upper rectifying plate 15Α. The center of the lower rectifying plate 15Β The portion is attached to the lower edge of the opening portion 16. The lower rectifying surface 18 is formed only by the upper surface of the lower rectifying plate 15A. The loading opening 13 is partitioned between the upper and lower rectifying plates 15, 15. Although not shown in the drawings, the carry-out opening 14 is also divided in the same manner as the carry-in opening 13 shown in Fig. 5 . In this embodiment, the length of the flow regulating member 15 in the conveying direction of the workpiece 9 coincides with the depth L of the loading/unloading openings 13 and 14. The depth L of the loading/unloading openings 13 and 14 is twice or more the thickness D (l^2xD), preferably 6 times or more (L26xD), which is the same as the embodiment described above. The present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit and scope of the invention. For example, the carry-in opening 13 and the carry-out opening 14 may be constituted by a common opening. The conveyance mechanism 20 can also carry the workpiece 9 from the common opening into the processing tank 10 and arrange it in the processing space 19, and after performing the surface treatment, the workpiece 9 is carried out from the shared opening to the outside. The carry-in of the processing object 9 toward the processing tank 10 and the removal from the processing tank 1 can be performed by the operator in addition to the use of the transport mechanism 20. The position between the outer end portions of the upper and lower flow regulating plates 15A, 15B or the position between the inner end portions may not coincide with the conveyance direction of the workpiece 9. Either of the upper and lower rectifying plates 15A, 15B may protrude toward the outer side of the processing tank 10 or the inside of the processing tank 10 more than the other. At this time, the depth (L) of the space between the two rectifying plates 、5, 15 143256.doc • 18· 201021627 which overlaps each other in the opposite direction (the opening 13 or 14) in the above-mentioned conveying direction may also be The main 4′′ is twice or more than the opposing distance (D) between the rectifying plates 15 and 15, and is preferably 6 times or more. [Industrial Applicability] The present invention is applicable to, for example, a flat panel display (display) or a semiconductor wafer. [Simple description of the map]
❹ 圖1係表示本發明之第〖實施形態之表面處理裝置之概略 構成的解說圖； 圖2係自沿圖1之„_„方向觀察上述表面處理裝置之處理 槽之箭視側面圖； 圖3係表示上述處理槽之搬入開口，且為沿圖2之 線之放大剖面圖； 圖4係表示本發明之第2實施形態，且為處理槽之搬入開 口之放大剖面圖；及 圖5係表示本發明之第3實施形態，且為處理槽之搬入開 口之放大剖面圖。 【主要元件符號說明】 1 表面處理裝置 9 被處理物 10 處理槽 11 搬入侧壁 12 搬出側壁 13 搬入開口 143256.doc -19- 2010216271 is an explanatory view showing a schematic configuration of a surface treatment apparatus according to an embodiment of the present invention; and FIG. 2 is an arrow side view of a processing tank of the surface treatment apparatus viewed from a direction of FIG. 3 is an enlarged cross-sectional view taken along the line of FIG. 2, and FIG. 4 is an enlarged cross-sectional view showing a loading opening of the processing tank; and FIG. The third embodiment of the present invention is shown in an enlarged cross-sectional view of the loading opening of the processing tank. [Description of main component symbols] 1 Surface treatment device 9 Object to be treated 10 Treatment tank 11 Loading into the side wall 12 Carrying out the side wall 13 Loading the opening 143256.doc -19- 201021627
14 15 15a 15b 16 17 18 19 20 30 33 40 50 51 D L 搬出開口 整流板 上側整流板部 下側整流板部 開口部 上側整流面 下側整流面 處理空間 搬送機構 供給系統 供給喷嘴 排氣系統 再利用部 分離回收器 整流面之對向距離 開口之深度 143256.doc -20-14 15 15a 15b 16 17 18 19 20 30 33 40 50 51 DL Carry-out opening rectification plate side rectification plate lower lower rectification plate section opening upper rectification surface lower rectification surface treatment space transport mechanism supply system supply nozzle exhaust system reuse section The depth of the opposite distance of the rectifying surface of the separation collector is 143256.doc -20-