CN102165566A - Surface treatment apparatus - Google Patents

Surface treatment apparatus Download PDF

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Publication number
CN102165566A
CN102165566A CN2009801381737A CN200980138173A CN102165566A CN 102165566 A CN102165566 A CN 102165566A CN 2009801381737 A CN2009801381737 A CN 2009801381737A CN 200980138173 A CN200980138173 A CN 200980138173A CN 102165566 A CN102165566 A CN 102165566A
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China
Prior art keywords
gas
opening
treatment trough
treated
moving
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Granted
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CN2009801381737A
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CN102165566B (en
Inventor
梅冈尚
八木泽博史
真弓聪
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32376—Scanning across large workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A gas flow in openings, which are arranged on a surfaced treatment tank for the purpose of carrying in and out a subject to be treated, is stabilized. A subject to be treated (9) is carried into a treatment tank (10) in the transfer direction from a carry-in opening (13), and is arranged in a treatment space (19). A treatment gas is supplied to the treatment space (19) from a supply system (30), and the surface of the subject to be treated (9) is treated. Then, the subject to be treated (9) is carried out from a carry-out opening (14). The gas is released from the inside of the treatment tank (10) by means of an air-release system (40). The openings (13, 14) are defined by a pair of flow-straightening surfaces (17, 18), which face each other with a facing distance (D) therebetween in the facing direction which orthogonally intersect with the transfer direction. The depth (L) of the openings (13, 14) in the transfer direction is set double the facing direction (D) or more, and preferably, six times or more.

Description

Surface processing device
Technical field
The present invention relates to make and handle that gas contacts with the surface of object being treated so that the device that the surface of object being treated is handled, particularly be suitable for using having the surface processing device that toxicity or corrosive processing gas are handled.
Background technology
Known just like lower device, this device blows to object being treateds such as glass substrate or semiconductor wafers and handles gas so that carry out surface treatments such as etching, cleaning, surface modification, film forming.In case being used for this surface-treated handles gas and has much to comprise and leak into outside then produce the composition of unfavorable condition aspect secure context or environment.So, utilize treatment trough (chamber) will handle space encloses usually, to prevent handling gas leakage to outside.
The surface processing device of patent documentation 1,2 is provided with: the outlet that object being treated is imported the inlet and the derivation object being treated of treatment trough (chamber).Inlet and export mixes slit-shaped.The mitigation chamber is set at the two ends of treatment trough, relaxes outflow and the inflow of ambient atmos in treatment trough that plasma generates gas.The treatment trough gas inside is discharged from exhaust outlet.
The surface processing device of patent documentation 3 has: surround the inside groove of plasma discharging generating unit and the water jacket that this inside groove is surrounded.Force down in the inner pressure ratio inside groove in the space between water jacket and the inside groove and lower than ambient atmos pressure.Consequently, handle gas and flow to space between water jacket and the inside groove, and ambient atmos flows into water jacket from inside groove.
Patent documentation 1: Japan's special permission No. 4058857 communique (Fig. 9)
Patent documentation 2: Japan's special permission No. 3994596 communique (Fig. 7)
Patent documentation 3: TOHKEMY 2003-142298 communique
Treatment trough need be provided with the opening of object being treated turnover.So the processing gas in the treatment trough also might leak from this opening.In order to prevent such leakage, can consider gas extraction system is connected with treatment trough so that carry out exhaust from treatment trough.Thus, the gas that can make above-mentioned opening part from the outside of treatment trough towards the internal flow of treatment trough.But, become turbulent flow easily from the inflow gas of above-mentioned opening.If become turbulent flow, then the distribution of gas in the treatment trough becomes unstable.And when the ambient atmos of treatment trough outside was disorderly, this disorder also can propagate into the inside of treatment trough via above-mentioned opening.The inventor confirms if form eddy current in the outside of above-mentioned opening, then exists the gas of above-mentioned open interior to become eddy current and flow out to outside phenomenon from above-mentioned opening.
Summary of the invention
The present invention In view of the foregoing makes, and its purpose is to make and is arranged at the steady air current that be used for opening part that object being treated come in and go out of surface treatment with treatment trough.
In order to solve above-mentioned problem, surface processing device of the present invention makes handles that gas contacts with the surface of object being treated and to handling on described surface, this surface processing device is characterised in that to have:
Treatment trough, it has the opening of moving into or take out of object being treated along the conveyance direction, and is provided with in inside and carries out described surface-treated and handle the space;
Feed system, it is supplied with to described processing space and handles gas; And
Gas extraction system, gas is discharged in its inside from described treatment trough,
The described opening of described treatment trough by each other with the opposed direction of described conveyance direction quadrature on be separated by opposed distance and opposed a pair of rectification face delimited, the depth along described conveyance direction of described opening is more than the twice of described opposed distance
By carrying out exhaust, thereby can form from outside air-flow at described opening part towards treatment trough inside by gas extraction system.Thus, can prevent to handle gas and drain to the outside from described opening.In addition, utilize a pair of rectification face, can make the steady air current in described opening flows into treatment trough, thereby can prevent that inflow gas from becoming turbulent flow, and, can make inflow gas near laminar flow.Therefore, not only can make the distribution of gas in the treatment trough stable, and can make the distribution of gas of handling the space stable.Thus, can guarantee surface-treated stability.And, can prevent that the inside of treatment trough is subjected to externalities.For example, when producing gas such as eddy current turbulent in the outside of treatment trough, can prevent that this turbulent flow from propagating into the inside of treatment trough via opening, thereby can prevent that the treatment trough gas inside from becoming eddy current etc. and draining to the outside by described opening.And then, can prevent to handle gas more reliably or handle gas leakage.
The depth of described opening is 6～10 times of described opposed distance more preferably.Thus, can stablize the air-flow of opening part more reliably.
The shape of described opening is preferably rectangle.
When described opposed distance is different not simultaneously because of the position, opposed distance definition is a mean value.The depth of described opening is preferably more than the twice of mean value of described opposed distance, and the depth of described opening is 6～10 times of mean value of described opposed distance more preferably.
According to the present invention, can be used in the steady air current of the opening part of moving into or take out of object being treated.And then, can prevent that the distribution of gas in the treatment trough from producing change, thereby can guarantee surface-treated stability.
Description of drawings
Fig. 1 is the explanation figure of simple structure of the surface processing device of expression first embodiment of the invention.
Fig. 2 is oneself sees the treatment trough of above-mentioned surface processing device along the direction of the II-II line of Fig. 1 a end view.
Fig. 3 represents the opening of moving into of above-mentioned treatment trough, is the amplification profile along the III-III line of Fig. 2.
Fig. 4 represents second execution mode of the present invention, is the amplification profile of moving into opening of treatment trough.
Fig. 5 represents the 3rd execution mode of the present invention, is the amplification profile of moving into opening of treatment trough.
Embodiment
Below, embodiments of the present invention are described.
Fig. 1 represents first execution mode of the present invention.The object being treated 9 of this execution mode is made of glass basal plates of flat panel display, but the present invention is not limited to this, for example goes for semiconductor wafer, the various object being treateds such as resin molding of sheet continuously.The surface treatment content of this execution mode is the etching in the silicon on glass substrate 9 surfaces (omitting diagram) of filming, but the present invention is not limited to this, also go for the etching of silica or silicon nitride, and be not limited to etching, also go for various surface treatments such as film forming, cleaning, preventing hydration, hydrophiling.
In addition, the length (size on the left and right directions of Fig. 1) of the object being treated 9 that constitutes by the glass for flat panel display substrate for example for 1500mm, width (with the size on the direction of the paper quadrature of Fig. 1) for example for about 1100mm, thickness is for example for about 0.7mm.
As shown in Figure 1, surface processing device 1 has: treatment trough 10, transport mechanism 20, feed system 30 and gas extraction system 40.
Treatment trough 10 constitutes container-like, and its size can be configured in inside with object being treated 9.Substantial middle portion in treatment trough 10 inside is formed with and handles space 19.In other words, treatment trough 10 surrounds and handles space 19.Handle space 19 at aftermentioned supply nozzle 33 with should be configured between the object being treated 9 below this supply nozzle 33 and delimited.In addition, in the drawings, handle the thickness (size on the above-below direction) in space 19 and represented turgidly.The thickness in actual processing space 19 is about 0.5～5mm.
On the wall 11 of treatment trough 10 1 distolateral (in Fig. 1, being the right side), be formed with and move into opening 13.On the wall 12 of treatment trough 10 another distolateral (in Fig. 1, being the left side), be formed with and take out of opening 14.Move into take out of opening 13,14 with the direction of the paper quadrature of Fig. 1 on extend.Object being treated 9 is taken out of opening 13,14 by moving into, and can pass in and out treatment trough 10.Move into and take out of opening 13,14 and always open.Be not provided with at treatment trough 10 and take out of the door that opening 13,14 opens and closes moving into.For moving into the structure of taking out of opening 13,14, will be described in further detail in the back.
Transport mechanism 20 is made of the roller conveying device.A plurality of rollers 21 of roller conveying device make axis towards with the direction of the paper quadrature of Fig. 1 and about arrange across the compartment of terrain.The part of roller conveying device 20 is configured in the inside of treatment trough 10.Object being treated 9 is placed on the roller 21, and right-to-left in Fig. 1 (conveyance direction) conveyance is moved in the treatment trough 10 and is configured in and handle space 19 by moving into opening 13, after this, takes out of from treatment trough 10 by taking out of opening 14.
Transport mechanism 20 is not limited to the roller conveying device, also can be by moving bolster, float workbench, mechanical arm etc. and constitute.
Feed system 30 has: unstrpped gas supply unit 31 and supply nozzle 33.Feed path 32 extends from unstrpped gas supply unit 31.Feed path 32 is connected with supply nozzle 33.Supply nozzle 33 is configured in the top of treatment trough 10.Though omit detailed diagram, supply nozzle 33 with the direction of the paper quadrature of Fig. 1 on extend slightly longways than the size of object being treated 9 on this direction.
Feed system 30 will comprise processing gas with the material composition of the corresponding reacted constituent of contents processing and this reacted constituent etc. and be supplied to and handle space 19.Handle gas componant (above-mentioned reacted constituent, material composition etc.) and have environmental loads, toxicity, corrosivity mostly.In relating to the etched present embodiment of silicon, as reacted constituent, using fluorine is reacted constituent and oxidative reaction composition.As fluorine is reacted constituent, exemplifies HF, COF 2, fluoro free radical etc.Fluorine is that reacted constituent can followingly generate, and for example utilizes water (H 2O) fluorine is the raw material humidification after, carry out plasma and handle (comprise decomposition, excite, activation, ionization etc.) and generate.In this embodiment, be raw material as fluorine, use CF 4As fluorine is raw material, also can substitute CF 4And use C 2F 6, C 3F 8, C 3F 8Wait other PFC (perfluorinated hydrocarbon), also can use CHF 3, CH 2F 2, CH 3HFC such as F (hydrogen fluorine carbide) can also use SF 6, NF 3, XeF 2Deng the fluorochemical outside PFC and the HFC.
Fluorine is that raw material can utilize the diluent gas dilution.As diluent gas, for example use rare gas or N such as Ar, He 2As to fluorine being the additive that raw material adds, can place of water (H 2O) use ethanol etc. to contain the OH based compound.
As the oxidative reaction composition, exemplify O 3, O free radical etc.In this embodiment, as the oxidative reaction composition, use O 3Can be with oxygen (O 2) be that the prepared using ozone generator generates O 3Also can be with O 2Deng oxygen is the raw material plasma, generates the oxidative reaction composition.
Above-mentioned fluorine is that raw material or oxygen are that carry out in the pair of electrodes plasma space each other that the plasma of raw material can import plasma creating device by the gas that will comprise above-mentioned raw materials.Above-mentioned plasma is preferably handled near atmospheric pressure.At this, refer to 1.013 * 10 near the atmospheric pressure 4～50.663 * 10 4The scope of Pa is if consider the simplification that pressure controlled convenience and device constitute, then preferred 1.333 * 10 4～10.664 * 10 4Pa, more preferably 9.331 * 10 4～10.397 * 10 4Pa.
In the present embodiment relevant with the etching of silicon, utilizing Ar dilution fluorine at unstrpped gas supply unit 31 is the CF of raw material 4And interpolation H 2O is unstrpped gas (CF thereby obtain fluorine 4+ Ar+H 2O).With this fluorine is that unstrpped gas is passed through feed path 32 importing supply nozzles 33.Be provided with pair of electrodes at supply nozzle 33.Making fluorine between this electrode is the unstrpped gas plasma.Supply nozzle 33 double as plasma creating devices.Thus, generating fluorine such as HF is reacted constituent.Though the diagram of omission as the oxidative reaction composition, can generate O by ozone generator separately 3And it is imported supply nozzle 33, mix with gas after above-mentioned plasma is handled.Thus, generate that to comprise fluorine be reacted constituent (HF etc.) and oxidative reaction composition (O 3Deng) processing gas.Self-evident, handle gas and also include unstrpped gas composition (CF 4, H 2O, Ar, O 2Deng).This processing gas blows out to handling space 19 from the blow-off outlet of the bottom surface (front end face) of supplying with nozzle 33.The supply flow rate of handling gas for example is about 32slm.
In addition, also can comprise the processing gas that fluorine is reacted constituent and oxidative reaction composition, should handle gas and carry and blow out to supply nozzle 33 by feed path 32 in gas supply part 31 generations.
The processing gas that blows out from supply nozzle 33 is blown into the object being treated 9 of handling space 19, and object being treated 9 is carried out surface treatment.When carrying out the etching of silicon, utilize the oxidizability composition (O that handles in the gas 3Deng) with silicon oxidation, making the fluorine in silica and the processing gas is that reacted constituent (HF etc.) reacts, and generates the SiF of volatile ingredient 4Thus, the silicon layer on object being treated 9 surfaces can be removed.
Then, gas extraction system 40 is described.For example substantial middle portion in treatment trough 10 bottoms is provided with exhaust outlet 43.Exhaust pathway 42 extends from exhaust outlet 43.Be disposed with filter house 45 and exhaust pump 41 at exhaust pathway 42.Though the diagram of omission is formed with local exhaust inlet in the bottom surface of supply nozzle 33 and the blow-off outlet of processing gas in abutting connection with ground.Derive from the top of supplying with nozzle 33 in the attraction path that links to each other with this local exhaust inlet.The exhaust pathway 42 of this attraction path and filter house 45 upstream sides (exhaust outlet 43 sides) converges.Above-mentioned local exhaust inlet and attraction path also constitute the key element of gas extraction system 40.
Filter house 45 will be discharged the filter that dust in the gas etc. removes except that comprising, and also comprises to discharge washer that HF in the gas etc. removes, will discharge the H in the gas 2The mist eliminator that O removes, with the O in the waste gas 3The ozone of removing is removed device etc.
According to the driving of exhaust pump 41 (exhaust gear), the gas in the treatment trough 10 is drawn in the exhaust pathway 42 from exhaust outlet 43.And, mainly be inhaled into above-mentioned local exhaust inlet at the processing gas of handling after space 19 is blown into object being treated 9 (hereinafter referred to as " having handled gas "), and converge through above-mentioned attraction path and exhaust pathway 42.Handle gas and comprised composition (HF, the O that handles gas 3, CF 4, H 2O, Ar etc.) and pass through the secondary product (SiF that surface treatment reaction generates 4Deng).Also exist a part of having handled gas from handling the situation that leak in space 19, such gas of processing is inhaled into from exhaust outlet 43.
Extraction flow based on gas extraction system 40 is set on a small quantity, so that the gases in the treatment trough 10 can not moved into certainly and take out of opening 13,14 and spill.In order to make gas not take out of opening 13,14 and spill, make extraction flow bigger and the atmosphere gas (air) of treatment trough 10 outsides is moved into certainly take out of opening 13,14 and flowed into to the inside of treatment trough 10 than the supply flow rate of handling gas from moving into.In the present embodiment, as mentioned above, the supply flow rate of handling gas is about 32slm, and relative therewith, the extraction flow of the first discharge system 40 for example is about 200～400slm.
Therefore, the major part of the discharge gas of being discharged by gas extraction system 40 is an air.The composition of discharging proportion maximum in the gas is a nitrogen.Discharge gas and also include composition (HF, the O that has handled gas 3, CF 4, H 2O, Ar, SiF 4Deng).
Surface processing device 1 also has and utilizes portion 50 again.Utilize the reacted constituent of portion 50 recycling gas from the gas of discharging again by gas extraction system 40.Below discuss in detail.Utilize portion 50 to have the recover 51 of separation again.In separating recover 51, be provided with diffusion barrier 52.The inside that utilizes diffusion barrier 52 will separate recover 51 is divided into enriched chamber 53 and dilution chamber 54.As diffusion barrier 52, for example use glassy polymer membranes (speciallyying permit No. 3151151 communique etc. with reference to Japan).Diffusion barrier 52 makes CF 4The speed that (reacted constituent) sees through is relatively little, and the speed that nitrogen (impurity) is seen through is big relatively.The exhaust pathway 42 in exhaust pump 41 downstreams links to each other with enriched chamber 53.Discharge gas from exhaust pump 41 is imported into enriched chamber 53, and recovery gas that utilizes diffusion barrier 52 to be separated into to stay in the enriched chamber 53 and the emission gases that sees through diffusion barrier 52 and enter dilution chamber 54.Reclaim the CF of gas 4Concentration height (CF 4More than=the 90vol%) and flow little.The CF of emission gases 4Low (the CF of concentration 4=1vol% is following) and flow big.
In addition, though only illustrate a separation recover 51 in the drawings, utilize portion 50 also can have a plurality of separation recovers 51 again.A plurality of separation recovers 51 both can have been connected continuous, also can in parallelly link to each other, and can also link to each other with the mode that is parallel together connecting.
Reclaim path 55 from the enriched chamber 53 downstream extend.Reclaiming path 55 is connected with unstrpped gas supply unit 31.
Emission path 46 extends from dilution chamber 54.Emission path 46 is connected with the equipment of removing the evil 47.
The structure of taking out of opening 13,14 of moving into of treatment trough 10 is described in detail in detail.
As shown in Figures 2 and 3, be formed with peristome 16 moving into sidewall 11.Peristome 16 constitutes at the Width of moving into sidewall 11 (the paper orthogonal direction of the left and right directions of Fig. 2, Fig. 3) and goes up the slit-shaped of extending.
Be equipped with and constitute a pair of cowling panel 15,15 up and down moving into sidewall 11.Below, when the cowling panel 15 that is distinguished from each other up and down, behind the Reference numeral of the cowling panel 15 of upside, put on " A ", behind the Reference numeral of the cowling panel 15 of downside, put on " B ".
As shown in Figure 3, the cowling panel 15A of upside is divided into two the upward 15a of side fairing portion, 15a.As shown in Figure 2, each rectification board 15a, 15a constitute the thin tabular of extending along the Width of moving into sidewall 11.As shown in Figure 3, go up that the 15a of side fairing portion, 15a (are the right side) from the outside in Fig. 3 and inboard (being the left side) clips the part of peristome 16 upsides of moving into sidewall 11 for two in Fig. 3.The bottom surface of the last side fairing 15a of portion, 15a and the last ora terminalis coplane of peristome 16.Constitute the rectification face 17 of upside by the last ora terminalis of the bottom surface of the last side fairing 15a of portion, the 15a of coplane each other and peristome 16.Upside rectification face 17 is extension flatly on the Width of moving into sidewall 11.
The cowling panel 15B of downside is divided into two the following side fairing 15b of portion, 15b.As shown in Figure 2, each rectification board 15b, 15b constitute the thin tabular of extending along the Width of moving into sidewall 11.As shown in Figure 3, two the following side fairing 15b of portion, 15b (are the right side) from the outside and inboard (being the left side) clips the part of peristome 16 downsides of moving into sidewall 11 in Fig. 3 in Fig. 3.The end face of the following side fairing 15b of portion, 15b and the following ora terminalis coplane of peristome 16.By the end face of the following side fairing 15b of portion, the 15b of coplane and the following ora terminalis of peristome 16 constitute downside rectification face 18 each other.Downside rectification face 18 is extension flatly on the Width of moving into sidewall 11.
Upside rectification face 17 and downside rectification face 18 are parallel to each other, and up and down (with the opposed direction of conveyance direction (left and right directions of Fig. 3) quadrature of object being treated 9 on) opposed.Between a pair of rectification face 17,18, be formed with and move into opening 13.Upside rectification face 17 delimited the upper limb of opening 13.Downside rectification face 18 delimited the lower edge of opening 13.
The length L along object being treated 9 conveyance directions (left and right directions of Fig. 3) of rectification face 17,18 is that the depth L along the conveyance direction of opening 13 is that the opposed distance D of rectification face 17,18 is (L 〉=2 * D), to be preferably (L 〉=6 * D) more than 6 times more than the twice of the D of thickness up and down of opening 13.Consider the installation of cowling panel 15 and with the interference of roller 21 etc., suitably set the upper limit of the depth L of opening 13.The upper limit of the depth L of opening 13 is preferably about 15 times of opposed distance D, more preferably about 10 times.
In this embodiment, the opposed distance D of rectification face 17,18 is that the thickness D of opening 13 for example is about D=5mm.Therefore, the depth L of opening 13 is more than the L=10mm, is preferably more than the 30mm.
Though omit detailed diagram, for taking out of opening 14, also constitute the structure same with moving into opening 13.That is, be formed with peristome 16 taking out of sidewall 12, cowling panel 15 be installed, and be formed with opposed a pair of rectification face 17,18 up and down, between these rectification faces 17,18, delimit and take out of opening 14 at this peristome 16.The depth L that takes out of opening 14 is more than the twice of thickness D, is preferably more than 6 times.
According to the surface processing device 1 of said structure, utilize transport mechanism 20 that object being treated 9 is moved into the inside that opening 13 is moved into treatment trough 10 certainly, and it is imported processing space 19.In addition, utilize feed system 30, will handle gas and supply to processing space 19.This processing gas contacts with object being treated 9 and carries out surface treatments such as etching.Object being treated 9 after handling is taken out of from treatment trough 10 by taking out of opening 14.A plurality of object being treateds 9 are formed a line across the compartment of terrain on roller conveying device 20, move into successively carry out surface treatment in the treatment trough 10 after, take out of from treatment trough 10.
When supplying with processing gas, the gas (comprising the gas of processing of handling space 19) that utilizes gas extraction system 40 to discharge in the treatment troughs 10.By carrying out above-mentioned exhaust, the gas of treatment trough 10 outsides is taken out of the inside that opening 13,14 flows into treatment trough 10 by moving into.Therefore, can make and move into the air-flow of taking out of in the opening 13,14 towards the direction that flows to inboard (in the treatment trough 10) from the outside.Thus, can prevent the processing gas in the treatment trough 10 or handled gas and taken out of opening 13,14 and drain to the outside from moving into.
And the twice of moving into the depth L that takes out of opening 13,14 and be thickness D is above (L 〉=2 * D), to be preferably that (L 〉=6 * D) therefore, can make from moving into and take out of the steady air current that opening 13,14 flows into, and can prevent that inflow gas from becoming turbulent flow more than 6 times.And the state that can make inflow gas is near laminar flow.Therefore, can make the distribution of gas of treatment trough 10 stable.And then, can make the processing gas flow of handling space 19 stable.Thus, can guarantee surface-treated stability.And, can prevent that the inside of treatment trough 10 is subjected to externalities.For example, when the outside at treatment trough 10 has produced gases such as eddy current turbulent, can prevent that this turbulent flow from propagating into the inside of treatment trough 10 via opening 13,14, thereby can prevent that treatment trough 10 gas inside from becoming eddy current etc. and draining to the outside from opening 13,14.And then, can prevent the leakage of handling gas or having handled gas more reliably.
Utilize gas that gas extraction system 40 discharges in treatment trough 10 after filter house 45 filters, import by exhaust pump 41 compression backs and separate in the recovers 51.In separating recover 51, will discharge gas separations is CF 4Recovery gas and CF that concentration is high 4The emission gases that concentration is low.Reclaim gas and send into unstrpped gas supply unit 31 through reclaiming path 55.Thus, can be with the reacted constituent (CF that in separating recover 51, reclaims 4) send back to and reclaim path 55 and utilize again.Therefore, can reduce the CF of surface processing device 1 4Total use amount, thereby can suppress operating cost.After emission gases is utilized emission path 46 to deliver to the equipment of removing the evil 47 to carry out disinfection, be discharged in the atmosphere.
The extraction flow of gas extraction system 40 is a spot of, can not move into certainly and takes out of opening 13,14 and leak so that handled gas.Therefore, can alleviate the load that separates recover 51.And, the load that also can alleviate the equipment of removing the evil 47.Thus, can make the separation recover 51 and equipment 47 miniaturizations of removing the evil.
Then, other execution mode of the present invention is described.In the following embodiments, the structure for repeating with the execution mode narrated marks same Reference numeral in the accompanying drawings and omits explanation.
Fig. 4 represents to move into the variation of taking out of opening.In this variation, each cowling panel 15 up and down is not split into rectification board 15a, 15b, but constitutes the tabular of one.The cowling panel 15A of upside is installed in the lateral surface of peristome 16 upper portions of moving into sidewall 11.The last ora terminalis coplane of the bottom surface of last side fairing 15A and peristome 16.By the bottom surface of the last side fairing 15A of coplane and the last ora terminalis of peristome 16 constitute upside rectification face 17 each other.
The cowling panel 15B of downside is installed in the lateral surface of peristome 16 lower portion of moving into sidewall 11.The following ora terminalis coplane of the end face of following side fairing 15B and peristome 16.By the end face of the following side fairing 15B of coplane and the following ora terminalis of peristome 16 constitute downside rectification face 18 each other.
Though omit diagram, for the cowling panel 15 of taking out of sidewall 12, also constitute the structure same with the cowling panel of moving into sidewall 11 shown in Figure 4 15.
The twice of moving into the depth L that takes out of opening 13,14 and be thickness D is above, and (L 〉=2 * D) are preferably that (L 〉=6 * D), this point is identical with first execution mode more than 6 times.In addition, also cowling panel 15 can be mounted to from the medial surface of wall 11,12 and give prominence to, and be not the lateral surface that is installed on wall 11,12 towards the inside of treatment trough 10.
Fig. 5 represents to move into other variation of taking out of opening.In this variation, move into the peristome 16 of sidewall 11 and compare with the execution mode of having narrated (Fig. 3, Fig. 4), open significantly up and down.Each cowling panel 15 up and down constitutes the tabular of one.The central portion of the cowling panel 15A of upside is installed in the last ora terminalis of peristome 16.Only the bottom surface by last side fairing 15A constitutes upside rectification face 17.The central portion of the cowling panel 15B of downside is installed in the following ora terminalis of peristome 16.Only the end face by following side fairing 15B constitutes downside rectification face 18.Between cowling panel 15,15 up and down, delimit and move into opening 13.
Though the diagram of omission for taking out of opening 14, also similarly delimited with the opening 13 of moving into shown in Figure 5.
In this embodiment, cowling panel 15 along the length of object being treated 9 conveyance directions with to move into the depth L that takes out of opening 13,14 consistent.The twice of moving into the depth L that takes out of opening 13,14 and be thickness D is above, and (L 〉=2 * D) are preferably that (L 〉=6 * D), this point is identical with the execution mode of having narrated more than 6 times.
The present invention is not limited to above-mentioned execution mode, can carry out various changes in the scope that does not break away from purport of the present invention.
For example, move into opening 13 and take out of opening 14 and also can constitute by a shared opening.Transport mechanism 20 can be moved into object being treated 9 inside of treatment trough 10 and be disposed at from above-mentioned shared opening and handle space 19, after carrying out surface treatment, object being treated 9 is taken out of the outside from above-mentioned shared opening.Object being treated 9 is moved into and from the taking out of of treatment trough 10, except that using transport mechanism 20, also can be undertaken above-mentionedly moving into and taking out of by the operator to treatment trough 10.
Position or inner end position each other each other, the outer end of up and down cowling panel 15A, 15B can not line up on the conveyance direction of object being treated 9 yet.Either party among up and down cowling panel 15A, the 15B compares the opposing party, can be towards the outside of treatment trough 10 or treatment trough 10 interior side-prominent.In this case, the depth along above-mentioned conveyance direction (L) in two cowling panels 15,15 overlapped part space (opening 13 or 14) each other on opposed direction for more than the twice of cowling panel 15,15 opposed distance (D) each other, be preferably more than 6 times and get final product.
Industrial applicibility
The present invention is applicable to the manufacturing of for example flat-panel monitor (FPD) or semiconductor wafer.
Description of reference numerals
1 surface processing device
9 object being treateds
10 treatment troughs
11 move into sidewall
12 take out of sidewall
13 move into opening
14 take out of opening
15 cowling panels
The last side fairing of 15a portion
Side fairing portion under the 15b
16 peristomes
17 upside rectification faces
18 downside rectification faces
19 handle the space
20 transport mechanisms
30 feed systems
33 supply nozzles
40 gas extraction system
50 utilize portion again
51 separate recover
The opposed distance of D rectification face
The depth of L opening

Claims (2)

1. surface processing device, it makes handles that gas contacts with the surface of object being treated and to handling on described surface, this surface processing device is characterised in that to have:
Treatment trough, it has the opening of moving into or take out of object being treated along the conveyance direction, and is provided with in inside and carries out described surface-treated and handle the space;
Feed system, it is supplied with to described processing space and handles gas; And
Gas extraction system, gas is discharged in its inside from described treatment trough,
The described opening of described treatment trough by each other with the opposed direction of described conveyance direction quadrature on be separated by opposed distance and opposed a pair of rectification face delimited, the depth along described conveyance direction of described opening is more than the twice of described opposed distance.
2. surface processing device as claimed in claim 1 is characterized in that, the depth of described opening is more than 6 times of described opposed distance.
CN2009801381737A 2008-09-30 2009-09-16 Surface treatment apparatus Expired - Fee Related CN102165566B (en)

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CN107833830A (en) * 2017-11-22 2018-03-23 上海华力微电子有限公司 A kind of method for improving integration etching aggregation residual defects
CN109890772A (en) * 2016-11-16 2019-06-14 日本电气硝子株式会社 The manufacturing method of glass substrate
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KR101654293B1 (en) * 2013-01-16 2016-09-06 주식회사 잉크테크 Wet process chamber and wet process apparatus having the same

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CN104852001A (en) * 2014-02-14 2015-08-19 丰田自动车株式会社 Surface treatment apparatus and surface treatment method
CN104852001B (en) * 2014-02-14 2017-12-15 丰田自动车株式会社 Surface processing device and surface treatment method
CN109890772A (en) * 2016-11-16 2019-06-14 日本电气硝子株式会社 The manufacturing method of glass substrate
CN109890772B (en) * 2016-11-16 2021-11-30 日本电气硝子株式会社 Method for manufacturing glass substrate
CN107833830A (en) * 2017-11-22 2018-03-23 上海华力微电子有限公司 A kind of method for improving integration etching aggregation residual defects
CN111189313A (en) * 2018-11-14 2020-05-22 株式会社迪思科 Sediment drying device
CN111189313B (en) * 2018-11-14 2023-04-18 株式会社迪思科 Sediment drying device

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US20110209829A1 (en) 2011-09-01
WO2010038372A1 (en) 2010-04-08
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JP2010087079A (en) 2010-04-15
JP4486146B2 (en) 2010-06-23

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