JP2010080741A - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP2010080741A
JP2010080741A JP2008248530A JP2008248530A JP2010080741A JP 2010080741 A JP2010080741 A JP 2010080741A JP 2008248530 A JP2008248530 A JP 2008248530A JP 2008248530 A JP2008248530 A JP 2008248530A JP 2010080741 A JP2010080741 A JP 2010080741A
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JP
Japan
Prior art keywords
layer
type
substrate
light emitting
nitride semiconductor
Prior art date
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Pending
Application number
JP2008248530A
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English (en)
Japanese (ja)
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JP2010080741A5 (enExample
Inventor
Shigetoshi Ito
茂稔 伊藤
Takeshi Kamikawa
剛 神川
Pablo Vaccaro
パブロ バッカロ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2008248530A priority Critical patent/JP2010080741A/ja
Priority to CN200980134707.9A priority patent/CN102144342B/zh
Priority to PCT/JP2009/065408 priority patent/WO2010027016A1/ja
Priority to US13/062,460 priority patent/US20110220871A1/en
Publication of JP2010080741A publication Critical patent/JP2010080741A/ja
Publication of JP2010080741A5 publication Critical patent/JP2010080741A5/ja
Pending legal-status Critical Current

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JP2008248530A 2008-09-05 2008-09-26 半導体発光素子 Pending JP2010080741A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008248530A JP2010080741A (ja) 2008-09-26 2008-09-26 半導体発光素子
CN200980134707.9A CN102144342B (zh) 2008-09-05 2009-09-03 氮化物半导体发光器件和半导体发光器件
PCT/JP2009/065408 WO2010027016A1 (ja) 2008-09-05 2009-09-03 窒化物半導体発光素子および半導体発光素子
US13/062,460 US20110220871A1 (en) 2008-09-05 2009-09-03 Nitride semiconductor light-emitting device and semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008248530A JP2010080741A (ja) 2008-09-26 2008-09-26 半導体発光素子

Publications (2)

Publication Number Publication Date
JP2010080741A true JP2010080741A (ja) 2010-04-08
JP2010080741A5 JP2010080741A5 (enExample) 2012-06-14

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ID=42210839

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JP2008248530A Pending JP2010080741A (ja) 2008-09-05 2008-09-26 半導体発光素子

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JP (1) JP2010080741A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064020B1 (ko) 2010-04-23 2011-09-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP2012064728A (ja) * 2010-09-15 2012-03-29 Stanley Electric Co Ltd 光源装置
JP2012146847A (ja) * 2011-01-13 2012-08-02 Sharp Corp 窒化物半導体発光素子および半導体光学装置
JP2013135224A (ja) * 2011-12-26 2013-07-08 Lg Innotek Co Ltd 発光素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007012327A1 (de) * 2005-07-29 2007-02-01 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip
JP2007214260A (ja) * 2006-02-08 2007-08-23 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007012327A1 (de) * 2005-07-29 2007-02-01 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip
JP2007214260A (ja) * 2006-02-08 2007-08-23 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN6012049249; Ｋｏｉｃｈｉ　ＯＫＡＭＯＴＯ，　Ｉｓａｍｕ　ＮＩＫＩ，　Ａｌｅｘａｎｄｅｒ　ＳＨＶＡＲＴＳＥＲ，　Ｙｕｋｉｏ　ＮＡＲＵＫＡＷＡ，　Ｔａｋａｓｈｉ　ＭＵＫＡＩ　ａｎｄ　Ａｘｅｌ　ＳＣＨＥＲＥ: 'Ｓｕｒｆａｃｅ-ｐｌａｓｍｏｎ-ｅｎｈａｎｃｅｄ　ｌｉｇｈｔ　ｅｍｉｔｔｅｒｓ　ｂａｓｅｄ　ｏｎ　ＩｎＧａＮ　ｑｕａｎｔｕｍ　ｗｅｌｌｓ' Ｎａｔｕｒｅ　Ｍａｔｅｒｉａｌｓ ＶＯＬ　３, 200409, ｐｐ．６０１-ｐｐ．６０５, Ｎａｔｕｒｅ　Ｐｕｂｌｉｓｈｉｎｇ　Ｇｒｏｕｐ *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101064020B1 (ko) 2010-04-23 2011-09-08 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP2011233897A (ja) * 2010-04-23 2011-11-17 Lg Innotek Co Ltd 発光素子、発光素子パッケージ
US8624283B2 (en) 2010-04-23 2014-01-07 Lg Innotek Co., Ltd. Light emitting device, manufacturing method thereof, light emitting device package, and lighting system
JP2012064728A (ja) * 2010-09-15 2012-03-29 Stanley Electric Co Ltd 光源装置
JP2012146847A (ja) * 2011-01-13 2012-08-02 Sharp Corp 窒化物半導体発光素子および半導体光学装置
JP2013135224A (ja) * 2011-12-26 2013-07-08 Lg Innotek Co Ltd 発光素子

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