JP2010077452A5 - - Google Patents

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Publication number
JP2010077452A5
JP2010077452A5 JP2008215386A JP2008215386A JP2010077452A5 JP 2010077452 A5 JP2010077452 A5 JP 2010077452A5 JP 2008215386 A JP2008215386 A JP 2008215386A JP 2008215386 A JP2008215386 A JP 2008215386A JP 2010077452 A5 JP2010077452 A5 JP 2010077452A5
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JP
Japan
Prior art keywords
electrode
substrate
substrate potential
frequency sputtering
mounting table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2008215386A
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English (en)
Japanese (ja)
Other versions
JP5190316B2 (ja
JP2010077452A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2008215386A external-priority patent/JP5190316B2/ja
Priority to JP2008215386A priority Critical patent/JP5190316B2/ja
Priority to CN2008801103366A priority patent/CN101821424B/zh
Priority to KR1020107007282A priority patent/KR101229473B1/ko
Priority to PCT/JP2008/065485 priority patent/WO2009044597A1/ja
Priority to US12/727,316 priority patent/US9017535B2/en
Publication of JP2010077452A publication Critical patent/JP2010077452A/ja
Publication of JP2010077452A5 publication Critical patent/JP2010077452A5/ja
Publication of JP5190316B2 publication Critical patent/JP5190316B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008215386A 2007-10-04 2008-08-25 高周波スパッタリング装置 Active JP5190316B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008215386A JP5190316B2 (ja) 2007-10-04 2008-08-25 高周波スパッタリング装置
CN2008801103366A CN101821424B (zh) 2007-10-04 2008-08-29 高频溅射装置
KR1020107007282A KR101229473B1 (ko) 2007-10-04 2008-08-29 고주파 스퍼터링 장치
PCT/JP2008/065485 WO2009044597A1 (ja) 2007-10-04 2008-08-29 高周波スパッタリング装置
US12/727,316 US9017535B2 (en) 2007-10-04 2010-03-19 High-frequency sputtering device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009535931 2007-10-04
JP2009535931 2007-10-04
JP2008215386A JP5190316B2 (ja) 2007-10-04 2008-08-25 高周波スパッタリング装置

Publications (3)

Publication Number Publication Date
JP2010077452A JP2010077452A (ja) 2010-04-08
JP2010077452A5 true JP2010077452A5 (https=) 2012-01-19
JP5190316B2 JP5190316B2 (ja) 2013-04-24

Family

ID=42208214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008215386A Active JP5190316B2 (ja) 2007-10-04 2008-08-25 高周波スパッタリング装置

Country Status (1)

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JP (1) JP5190316B2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140272684A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
CN106795625B (zh) * 2015-03-25 2018-05-22 株式会社爱发科 高频溅射装置及溅射方法
US10431440B2 (en) * 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP2020026575A (ja) * 2018-08-10 2020-02-20 東京エレクトロン株式会社 成膜装置、成膜システム、および成膜方法
JP7325278B2 (ja) * 2019-09-18 2023-08-14 東京エレクトロン株式会社 スパッタ方法およびスパッタ装置
CN115461489A (zh) * 2020-04-30 2022-12-09 东京毅力科创株式会社 Pvd装置
US20240102152A1 (en) * 2020-05-11 2024-03-28 Yun-Chu TSAI Method of depositing layers of a thin-film transistor on a substrate and sputter deposition apparatus
KR102939822B1 (ko) * 2022-10-05 2026-03-13 신크론 컴퍼니 리미티드 호모에피택셜 박막, 그 제조 방법 및 제조 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0623568Y2 (ja) * 1987-02-21 1994-06-22 株式会社島津製作所 グロ−放電型成膜装置
JP2005187860A (ja) * 2003-12-25 2005-07-14 Nec Compound Semiconductor Devices Ltd スパッタ装置
JP4755475B2 (ja) * 2005-10-06 2011-08-24 株式会社昭和真空 スパッタ装置

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