JP2010074148A - 電界効果型トランジスタ、表示素子、画像表示装置及びシステム - Google Patents
電界効果型トランジスタ、表示素子、画像表示装置及びシステム Download PDFInfo
- Publication number
- JP2010074148A JP2010074148A JP2009180600A JP2009180600A JP2010074148A JP 2010074148 A JP2010074148 A JP 2010074148A JP 2009180600 A JP2009180600 A JP 2009180600A JP 2009180600 A JP2009180600 A JP 2009180600A JP 2010074148 A JP2010074148 A JP 2010074148A
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- Japan
- Prior art keywords
- effect transistor
- field effect
- oxide semiconductor
- active layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 9
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】ゲート電圧を印加するためのゲート電極26と、電流を取り出すためのソース電極23及びドレイン電極24と、ソース電極23及びドレイン電極24に隣接して設けられ、マグネシウム(Mg)とインジウム(In)を主成分とする酸化物半導体からなる活性層22と、ゲート電極26と活性層22との間に設けられたゲート絶縁層25とを備えている。そして、活性層22を形成する際に流す酸素ガスの流量は、酸素分圧が1.7×10−3Paとなるように調整されており、活性層22を構成する酸化物半導体は、体積抵抗率が10Ωcmで、酸素が非化学量論組成であるMgIn2O4系酸化物半導体となる。
【選択図】図7
Description
また、ZnO及びIn−Ga−Zn−O系酸化物の結晶構造は、ウルツ型及びホモロガス型の六方晶系で異方性が強いため、薄膜の配向制御が必須で、大面積のディスプレイへの応用には困難が予想される。
そして、走査線とデータ線とによって、表示素子を特定することができる。
(1)ガラス製の基板21上に、100nmの厚さになるようにアルミニウム(Al)を蒸着する。そして、フォトリソグラフィを行ってライン状にパターニングし、ゲート電極26を形成する。
(2)プラズマCVDにより、200nmの厚さになるようにSiO2を成膜し、ゲート絶縁膜25を形成する。
(3)ゲート絶縁膜25上へのレジストの塗布、露光、現像を行い、活性層22に対応した形状にパターニングされたレジスト層を形成する。
(4)高周波スパッタ法により、活性層22となるMg−In系酸化物膜を形成する。
(5)レジストの除去によってリフトオフを行い、活性層22を所望の形状とする。
(6)フォトリソグラフィとリフトオフ法により、厚さ100nmのアルミニウム(Al)からなるソース電極とドレイン電極を形成する。ここでは、チャネル長は50μm、チャネル幅は2mmとした。
(1)ガラス製の基板500上に、200nmの厚さになるようにモリブデン(Mo)をスパッタする。そして、フォトリソグラフィによってライン状にパターニングし、ゲート電極501を形成する。
(2)プラズマCVDにより、ゲート絶縁膜502となるSiNx、活性層503となる非晶質シリコン(a−Si:H)、及びリンのドープされた非晶質シリコン504(n+−a−Si:H)の3層を続けて成膜する。膜厚はそれぞれ、300nm、200nm、50nmである。活性層503の成膜時は、基板温度を250℃とし、SiH4流量35sccm、H2流量35sccm、圧力0.1Torr、パワー密度100mW/cm2とした。n+−a−Si:Hは、活性層503とソース・ドレイン電極505及び506との間のコンタクトを良くするために設けている。続いて、フォトリソグラフィにより、TFTをアイランド化する。
(3)厚さ100nmのアルミニウム(Al)層を形成し、フォトリソグラフィによりソース電極505及びドレイン電極506の形状にこれをパターニングする。
(4)ソース・ドレイン電極505及び506をマスクとして、リアクティブイオンエッチング(RIE)によりバックチャネルをエッチングする。これによりソース電極とドレイン電極の間(チャネル部)のn+−a−Si:Hを除去し、図24の電界効果型トランジスタを得る。チャネル長は50μm、チャネル幅は0.2mmとした。
(1)ガラス製の基板21上に、100nmの厚さになるようにアルミニウム(Al)を蒸着する。そして、フォトリソグラフィによりライン状にパターニングし、ゲート電極26を形成する。
(2)プラズマCVDにより、200nmの厚さになるようにSiO2を成膜し、ゲート絶縁膜25を形成する。
(3)DCスパッタ法により、ソース電極23、ドレイン電極24となるITO膜を形成する。フォトリソグラフィにより、所望の電極形状にパターニングする。
(4)レジストの塗布、露光、現像を行い、活性層22に対応した形状にパターニングされたレジスト層を形成する。
(5)高周波スパッタ法により、活性層22となるMg−In系酸化物膜を形成する。成膜条件は実施例1と同様とする。
(6)レジストの除去によってリフトオフを行い、活性層22を所望の形状とする。
なお、Mg−In系酸化物膜の成膜条件は実施例1と同じであるため、実施例2の膜も非晶質状態であり約10Ωcmの体積抵抗率を持つ。
n系酸化物膜の体積抵抗率を10−2Ωcm以上109Ωcm以下とすることが好ましい。
Claims (12)
- ゲート電圧を印加するためのゲート電極と;
電流を取り出すためのソース電極及びドレイン電極と;
前記ソース電極及びドレイン電極に隣接して設けられ、マグネシウム(Mg)とインジウム(In)を主成分とする酸化物半導体からなる活性層と;
前記ゲート電極と前記活性層との間に設けられたゲート絶縁層と;を備える電界効果型トランジスタ。 - 前記酸化物半導体は、体積抵抗率が10−2Ωcm以上、109Ωcm以下であることを特徴とする請求項1に記載の電界効果型トランジスタ。
- 前記酸化物半導体は、前記インジウムの一部がアルミニウム及びガリウムの少なくともいずれかに置換されていることを特徴とする請求項1又は2に記載の電界効果型トランジスタ。
- 前記酸化物半導体は、前記マグネシウムの一部がカルシウム、ストロンチウム及びバリウムの少なくともいずれかに置換されていることを特徴とする請求項1〜3のいずれか一項に記載の電界効果型トランジスタ。
- 前記酸化物半導体は、少なくとも一部がスピネル構造あるいはオリビン構造を有することを特徴とする請求項1〜4のいずれか一項に記載の電界効果型トランジスタ。
- 前記酸化物半導体は、少なくとも一部が非晶質であることを特徴とする請求項1〜4のいずれか一項に記載の電界効果型トランジスタ。
- 前記酸化物半導体は、酸素の一部が窒素及びフッ素の少なくともいずれかに置換されていることを特徴とする請求項1〜6のいずれか一項に記載の電界効果型トランジスタ。
- 駆動信号に応じて光出力が制御される光制御素子と;
請求項1〜7のいずれか一項に記載の電界効果型トランジスタを含み、前記光制御素子を駆動する駆動回路と;を備える表示素子。 - 前記光制御素子は、有機エレクトロルミネッセンス素子を含むことを特徴とする請求項8に記載の表示素子。
- 前記光制御素子は、液晶素子を含むことを特徴とする請求項8に記載の表示素子。
- 画像データに応じた画像を表示する画像表示装置であって、
マトリックス状に配置された複数の請求項8〜10のいずれか一項に記載の表示素子と;
前記複数の表示素子における各電界効果型トランジスタにゲート電圧を個別に印加するための複数の配線と;
前記画像データに応じて、前記各電界効果型トランジスタのゲート電圧を前記複数の配線を介して個別に制御する表示制御装置と;
を備える画像表示装置。 - 請求項11に記載の画像表示装置と;
表示する画像情報に基づいて画像データを作成し、該画像データを前記画像表示装置に出力する画像データ作成装置と;を備えるシステム。
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Also Published As
Publication number | Publication date |
---|---|
US20110128275A1 (en) | 2011-06-02 |
KR20110030694A (ko) | 2011-03-23 |
CN102132413B (zh) | 2016-04-27 |
EP2316132B1 (en) | 2023-02-01 |
EP2316132A1 (en) | 2011-05-04 |
CN102132413A (zh) | 2011-07-20 |
WO2010021349A1 (en) | 2010-02-25 |
TWI409955B (zh) | 2013-09-21 |
TW201010084A (en) | 2010-03-01 |
JP5644071B2 (ja) | 2014-12-24 |
EP2316132A4 (en) | 2017-08-23 |
US20170154998A1 (en) | 2017-06-01 |
KR101232014B1 (ko) | 2013-02-08 |
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