JP2010050485A - エッチング速度の均一性を改善する装置及び方法 - Google Patents
エッチング速度の均一性を改善する装置及び方法 Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000009977 dual effect Effects 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims 1
- 238000012545 processing Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
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- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
【解決手段】エッチング装置(200)は、第1の電極(208)、第2の電極(202)、閉じ込めリング(216)、合焦リング(218)、及びシールド(220)を囲むチャンバを有する。第1の電極は、一定電位の源に結合される。第2の電極は、二重周波数RF電源(206)に結合される。閉じ込めリングは、第1の電極と第2の電極との間に配設される。チャンバは、源に結合された導電性材料で形成される。合焦リングは、実質的に、第2の電極を取り囲み、該第2の電極を電気的に絶縁する。シールドは、実質的に、合焦リングを取り囲む。第2の電極の縁とシールドの縁との間の距離は、少なくとも、該第2の電極の縁と第1の電極の縁との間の距離より少ない。シールドは、一定電位の源に結合された導電性材料で形成される。
【選択図】図2
Description
202 チャック
204 ウエハ
206 二重RF電源
208 上方電極
210 プラズマ
212 ガスライン
214 排気ライン
216 閉じ込めリング
210 プラズマ
218 合焦リング
220 導電性シールド
300 容量結合プラズマ処理チャンバ
302 チャック
304 ウエハ
306 二重RF電源
308 上方電極
312 ガスライン
314 排気ライン
316 閉じ込めリング
310 プラズマ
318 合焦リング
320 導電性シールド
322 シリコン被覆
Claims (9)
- 一定電位の源に結合された第1の電極と、
二重周波数RF電源に結合された第2の電極と、
前記第1の電極と前記第2の電極との間に配設された複数の閉じ込めリングと、
前記の第1の電極と、前記第2の電極と、前記複数の閉じ込めリングとを囲み、前記一定電位の前記源に結合された導電性材料で形成されたチャンバと、
前記第2の電極を実質的に取り囲み、前記第2の電極を電気的に絶縁する合焦リングと、
前記合焦リングを実質的に取り囲むシールドと、
を備え、前記第2の電極の縁と前記シールドの縁との間の距離は、少なくとも前記第2の電極の縁と前記第1の電極の縁との間の距離より小さく、前記シールドが前記一定電位の前記源に結合された導電性材料で形成された、
ことを特徴とするエッチング装置。 - 前記第2の電極がウエハを支持する請求項1に記載のエッチング装置。
- 前記合焦リングが石英を含む請求項1に記載のエッチング装置。
- 前記シールドがアルミニウムを含む請求項1に記載のエッチング装置。
- 前記シールド上に被覆されたシリコン層をさらに含む請求項4に記載のエッチング装置。
- 前記シリコン層が、前記合焦リングの上に、部分的に内側に延びる請求項5に記載のエッチング装置。
- 前記第1の電極の表面が前記第2の電極の表面より大きい請求項1に記載のエッチング装置。
- 上方電極と下方電極とを有するプラズマエッチング装置におけるエッチング速度の均一性を改善する方法であって、
電気的絶縁リングを、二重周波数RF電源に結合された前記下方電極の縁の周りに置き、
接地されたシールドを前記電気的絶縁リングの周りに置く、
ステップを備え、前記下方電極の縁と前記接地されたシールドの縁との間の距離が、少なくとも、前記下方電極の縁と前記上方電極の縁との間の距離より小さいことを特徴とする方法。 - 前記接地されたシールドの前記縁と前記上方電極の前記縁との間の距離を調整することをさらに含む請求項8に記載の方法。
Applications Claiming Priority (2)
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US33803401P | 2001-11-13 | 2001-11-13 | |
US60/338,034 | 2001-11-13 |
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JP2003544797A Division JP4750359B2 (ja) | 2001-11-13 | 2002-11-13 | エッチング速度の均一性を改善する装置及び方法 |
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JP2010050485A true JP2010050485A (ja) | 2010-03-04 |
JP5546216B2 JP5546216B2 (ja) | 2014-07-09 |
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JP2003544797A Expired - Lifetime JP4750359B2 (ja) | 2001-11-13 | 2002-11-13 | エッチング速度の均一性を改善する装置及び方法 |
JP2009263851A Expired - Lifetime JP5546216B2 (ja) | 2001-11-13 | 2009-11-19 | エッチング速度の均一性を改善する装置及び方法 |
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JP2003544797A Expired - Lifetime JP4750359B2 (ja) | 2001-11-13 | 2002-11-13 | エッチング速度の均一性を改善する装置及び方法 |
Country Status (6)
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US (1) | US6887340B2 (ja) |
EP (1) | EP1446825B1 (ja) |
JP (2) | JP4750359B2 (ja) |
KR (2) | KR101094123B1 (ja) |
CN (1) | CN1312727C (ja) |
WO (1) | WO2003043061A1 (ja) |
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JP2012015514A (ja) * | 2010-06-30 | 2012-01-19 | Lam Res Corp | プラズマ処理チャンバ用の可動接地リング |
KR101313166B1 (ko) | 2011-11-23 | 2013-09-30 | 엘아이지에이디피 주식회사 | 플라즈마 처리장치 |
US10529539B2 (en) | 2004-06-21 | 2020-01-07 | Tokyo Electron Limited | Plasma processing apparatus and method |
US10546727B2 (en) | 2004-06-21 | 2020-01-28 | Tokyo Electron Limited | Plasma processing apparatus and method |
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US7510665B2 (en) * | 2003-08-15 | 2009-03-31 | Applied Materials, Inc. | Plasma generation and control using dual frequency RF signals |
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- 2002-11-12 US US10/293,898 patent/US6887340B2/en not_active Expired - Lifetime
- 2002-11-13 CN CNB028224922A patent/CN1312727C/zh not_active Expired - Lifetime
- 2002-11-13 KR KR1020097022750A patent/KR101094123B1/ko not_active IP Right Cessation
- 2002-11-13 EP EP02780667A patent/EP1446825B1/en not_active Expired - Lifetime
- 2002-11-13 KR KR1020047007242A patent/KR100964827B1/ko active IP Right Grant
- 2002-11-13 JP JP2003544797A patent/JP4750359B2/ja not_active Expired - Lifetime
- 2002-11-13 WO PCT/US2002/036557 patent/WO2003043061A1/en active Application Filing
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WO2000039837A1 (en) * | 1998-12-28 | 2000-07-06 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
JP2000269196A (ja) * | 1999-03-19 | 2000-09-29 | Toshiba Corp | プラズマ処理方法及びプラズマ処理装置 |
JP2000286242A (ja) * | 1999-03-31 | 2000-10-13 | Tokyo Electron Ltd | プラズマ処理装置 |
WO2008121654A1 (en) * | 2007-03-30 | 2008-10-09 | Lam Research Corporation | Method and apparatus for inducing dc voltage on wafer-facing electrode |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US10529539B2 (en) | 2004-06-21 | 2020-01-07 | Tokyo Electron Limited | Plasma processing apparatus and method |
US10546727B2 (en) | 2004-06-21 | 2020-01-28 | Tokyo Electron Limited | Plasma processing apparatus and method |
JP2012015514A (ja) * | 2010-06-30 | 2012-01-19 | Lam Res Corp | プラズマ処理チャンバ用の可動接地リング |
KR101313166B1 (ko) | 2011-11-23 | 2013-09-30 | 엘아이지에이디피 주식회사 | 플라즈마 처리장치 |
Also Published As
Publication number | Publication date |
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EP1446825A1 (en) | 2004-08-18 |
KR20050044437A (ko) | 2005-05-12 |
US6887340B2 (en) | 2005-05-03 |
JP2006501631A (ja) | 2006-01-12 |
KR100964827B1 (ko) | 2010-06-22 |
EP1446825B1 (en) | 2012-10-31 |
KR20090125217A (ko) | 2009-12-03 |
KR101094123B1 (ko) | 2011-12-15 |
US20030148611A1 (en) | 2003-08-07 |
CN1585997A (zh) | 2005-02-23 |
CN1312727C (zh) | 2007-04-25 |
JP5546216B2 (ja) | 2014-07-09 |
WO2003043061A1 (en) | 2003-05-22 |
JP4750359B2 (ja) | 2011-08-17 |
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