JP4750359B2 - エッチング速度の均一性を改善する装置及び方法 - Google Patents
エッチング速度の均一性を改善する装置及び方法 Download PDFInfo
- Publication number
- JP4750359B2 JP4750359B2 JP2003544797A JP2003544797A JP4750359B2 JP 4750359 B2 JP4750359 B2 JP 4750359B2 JP 2003544797 A JP2003544797 A JP 2003544797A JP 2003544797 A JP2003544797 A JP 2003544797A JP 4750359 B2 JP4750359 B2 JP 4750359B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- edge
- wafer
- shield
- focusing ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 17
- 238000005530 etching Methods 0.000 claims description 36
- 230000009977 dual effect Effects 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000012545 processing Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
本明細書は、同じ発明者の名前で2001年11月13日に出願された米国特許仮出願連続番号第60/338,034号に基づく利益を主張するものである。
本発明は、基板支持体に関する。より具体的には、本発明は、プラズマ処理中に、基板上に均一なプラズマ分散を達成する方法及び装置に関する。
典型的なプラズマエッチング装置は、反応ガスが流れるチャンバをもつ反応器を備える。チャンバ内で、ガスは、典型的には、無線周波エネルギによりイオン化されてプラズマになる。プラズマガスの高度に反応性のあるイオンは、処理されて集積回路(IC)になる半導体ウエハの表面上のポリマーマスクのような材料と反応することができる。エッチング前に、ウエハはチャンバ内に置かれて、チャック又はホルダにより適当な位置に保持され、該ウエハの上面をプラズマガスに曝す。幾つかの種類のチャックが当業者に周知である。チャックは、等温表面を形成し、ウエハのためのヒートシンクとして働くものとなる。1つの種類においては、半導体ウエハは、機械的クランピング手段によりエッチングのための所定の位置に保持される。別の種類のチャックにおいては、半導体ウエハは、チャックとウエハとの間の電界により生成された静電力により所定の位置に保持される。本発明は、両方の種類のチャックに適用することができる。
第1の電極、第2の電極、閉じ込めリング、合焦リング、及びシールドを囲むチャンバを有するエッチング装置。第1の電極は、一定電位の源に結合される。第2の電極は、二重周波数RF電源に結合される。閉じ込めリングは、第1の電極と第2の電極との間に配設される。チャンバは、源に結合された導電性材料で形成される。合焦リングは、実質的に、第2の電極を取り囲み、該第2の電極を電気的に絶縁する。シールドは、実質的に、合焦リングを取り囲む。第2の電極の縁とシールドの縁との間の距離は、少なくとも、該第2の電極の縁と第1の電極の縁との間の距離より少ない。シールドは、一定電位の源に結合された導電性材料で形成される。
本明細書に組み入れられかつ本明細書の一部を構成する添付の図面は、本発明の1つ又はそれ以上の実施形態を示し、詳細な説明と併せて、本発明の原理及び実装を説明するものとなる。
Claims (8)
- 一定電位の源に結合された第1の電極と、
二重周波数RF電源に結合され、ウエハを支持する第2の電極と、
前記第1の電極と前記第2の電極との間に配設された複数の閉じ込めリングと、
前記の第1の電極と、前記第2の電極と、前記複数の閉じ込めリングとを囲み、前記一定電位の前記源に結合された導電性材料で形成されたチャンバと、
前記第2の電極を実質的に取り囲み、前記第2の電極を電気的に絶縁する合焦リングと、
前記合焦リングを実質的に取り囲むシールドと、
を備え、前記第2の電極の縁と前記シールドの縁との間の距離は、少なくとも前記第2の電極の縁と前記第1の電極の縁との間の距離より小さく、前記シールドが前記一定電位の前記源に結合された導電性材料で形成され、
前記シールドは、前記第2の電極の縁と前記ウエハから出る電流の戻り路を形成する、ことを特徴とするエッチング装置。 - 前記合焦リングが石英を含む請求項1に記載のエッチング装置。
- 前記シールドがアルミニウムを含む請求項1に記載のエッチング装置。
- 前記シールド上に被覆されたシリコン層をさらに含む請求項3に記載のエッチング装置。
- 一定電位の源に結合された第1の電極と、
二重周波数RF電源に結合され、ウエハを支持する第2の電極と、
前記第1の電極と前記第2の電極との間に配設された複数の閉じ込めリングと、
前記の第1の電極と、前記第2の電極と、前記複数の閉じ込めリングとを囲み、前記一定電位の前記源に結合された導電性材料で形成されたチャンバと、
前記第2の電極を実質的に取り囲み、前記第2の電極を電気的に絶縁する合焦リングと、
前記合焦リングを実質的に取り囲むシールドと、
を備え、前記第2の電極の縁と前記シールドの縁との間の距離は、少なくとも前記第2の電極の縁と前記第1の電極の縁との間の距離より小さく、前記シールドが前記一定電位の前記源に結合された導電性材料で形成され、
前記シールド上に被覆されたシリコン層をさらに含み、
前記シリコン層が、前記合焦リングの上に、部分的に内側に延びることを特徴とするエッチング装置。 - 前記第1の電極の表面が前記第2の電極の表面より大きい請求項1に記載のエッチング装置。
- 請求項1に記載のエッチング装置におけるエッチング速度の均一性を改善する方法であって、
前記合焦リングを、前記二重周波数RF電源に結合された前記第2の電極の縁の周りに置き、
接地されたシールドを前記合焦リングの周りに置く、
ステップを備え、前記第2の電極の縁と前記接地されたシールドの縁との間の距離が、少なくとも、前記第2の電極の縁と前記第1の電極の縁との間の距離より小さい、
ことを特徴とする方法。 - 前記接地されたシールドの前記縁と前記第1の電極の前記縁との間の距離を調整することをさらに含む請求項7に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33803401P | 2001-11-13 | 2001-11-13 | |
US60/338,034 | 2001-11-13 | ||
PCT/US2002/036557 WO2003043061A1 (en) | 2001-11-13 | 2002-11-13 | Apparatus and method for improving etch rate uniformity |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009263851A Division JP5546216B2 (ja) | 2001-11-13 | 2009-11-19 | エッチング速度の均一性を改善する装置及び方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006501631A JP2006501631A (ja) | 2006-01-12 |
JP4750359B2 true JP4750359B2 (ja) | 2011-08-17 |
Family
ID=23323116
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003544797A Expired - Lifetime JP4750359B2 (ja) | 2001-11-13 | 2002-11-13 | エッチング速度の均一性を改善する装置及び方法 |
JP2009263851A Expired - Lifetime JP5546216B2 (ja) | 2001-11-13 | 2009-11-19 | エッチング速度の均一性を改善する装置及び方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009263851A Expired - Lifetime JP5546216B2 (ja) | 2001-11-13 | 2009-11-19 | エッチング速度の均一性を改善する装置及び方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6887340B2 (ja) |
EP (1) | EP1446825B1 (ja) |
JP (2) | JP4750359B2 (ja) |
KR (2) | KR101094123B1 (ja) |
CN (1) | CN1312727C (ja) |
WO (1) | WO2003043061A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10529539B2 (en) | 2004-06-21 | 2020-01-07 | Tokyo Electron Limited | Plasma processing apparatus and method |
US10546727B2 (en) | 2004-06-21 | 2020-01-28 | Tokyo Electron Limited | Plasma processing apparatus and method |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100585089B1 (ko) * | 2003-05-27 | 2006-05-30 | 삼성전자주식회사 | 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법 |
US7510665B2 (en) * | 2003-08-15 | 2009-03-31 | Applied Materials, Inc. | Plasma generation and control using dual frequency RF signals |
US7431857B2 (en) * | 2003-08-15 | 2008-10-07 | Applied Materials, Inc. | Plasma generation and control using a dual frequency RF source |
US20050106873A1 (en) * | 2003-08-15 | 2005-05-19 | Hoffman Daniel J. | Plasma chamber having multiple RF source frequencies |
US7838430B2 (en) * | 2003-10-28 | 2010-11-23 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing |
US7879185B2 (en) | 2003-12-18 | 2011-02-01 | Applied Materials, Inc. | Dual frequency RF match |
US20050133166A1 (en) * | 2003-12-19 | 2005-06-23 | Applied Materials, Inc. | Tuned potential pedestal for mask etch processing apparatus |
US20060081337A1 (en) * | 2004-03-12 | 2006-04-20 | Shinji Himori | Capacitive coupling plasma processing apparatus |
KR101247833B1 (ko) * | 2004-06-21 | 2013-03-26 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 |
US7740737B2 (en) | 2004-06-21 | 2010-06-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
US20060027329A1 (en) * | 2004-08-09 | 2006-02-09 | Sinha Ashok K | Multi-frequency plasma enhanced process chamber having a torroidal plasma source |
US7430986B2 (en) * | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
US7837825B2 (en) * | 2005-06-13 | 2010-11-23 | Lam Research Corporation | Confined plasma with adjustable electrode area ratio |
US20070031609A1 (en) | 2005-07-29 | 2007-02-08 | Ajay Kumar | Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the same |
US7829471B2 (en) | 2005-07-29 | 2010-11-09 | Applied Materials, Inc. | Cluster tool and method for process integration in manufacturing of a photomask |
US7375038B2 (en) | 2005-09-28 | 2008-05-20 | Applied Materials, Inc. | Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication |
US8608851B2 (en) | 2005-10-14 | 2013-12-17 | Advanced Micro-Fabrication Equipment, Inc. Asia | Plasma confinement apparatus, and method for confining a plasma |
US7695633B2 (en) | 2005-10-18 | 2010-04-13 | Applied Materials, Inc. | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
US8674255B1 (en) * | 2005-12-08 | 2014-03-18 | Lam Research Corporation | Apparatus and method for controlling etch uniformity |
US7683289B2 (en) * | 2005-12-16 | 2010-03-23 | Lam Research Corporation | Apparatus and method for controlling plasma density profile |
JP2007250967A (ja) * | 2006-03-17 | 2007-09-27 | Tokyo Electron Ltd | プラズマ処理装置および方法とフォーカスリング |
US7988814B2 (en) * | 2006-03-17 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
US7264688B1 (en) | 2006-04-24 | 2007-09-04 | Applied Materials, Inc. | Plasma reactor apparatus with independent capacitive and toroidal plasma sources |
US7727413B2 (en) | 2006-04-24 | 2010-06-01 | Applied Materials, Inc. | Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density |
US7780864B2 (en) | 2006-04-24 | 2010-08-24 | Applied Materials, Inc. | Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution |
US7837827B2 (en) * | 2007-06-28 | 2010-11-23 | Lam Research Corporation | Edge ring arrangements for substrate processing |
US7736914B2 (en) * | 2007-11-29 | 2010-06-15 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing and controlling the level of polymer formation |
US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
US8485128B2 (en) * | 2010-06-30 | 2013-07-16 | Lam Research Corporation | Movable ground ring for a plasma processing chamber |
US9666414B2 (en) | 2011-10-27 | 2017-05-30 | Applied Materials, Inc. | Process chamber for etching low k and other dielectric films |
US9947559B2 (en) * | 2011-10-28 | 2018-04-17 | Applied Materials, Inc. | Thermal management of edge ring in semiconductor processing |
KR101313166B1 (ko) | 2011-11-23 | 2013-09-30 | 엘아이지에이디피 주식회사 | 플라즈마 처리장치 |
CN103021934B (zh) * | 2012-12-20 | 2015-10-21 | 中微半导体设备(上海)有限公司 | 一种通孔或接触孔的形成方法 |
US9449797B2 (en) | 2013-05-07 | 2016-09-20 | Lam Research Corporation | Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface |
CN106611691B (zh) * | 2015-10-26 | 2018-10-12 | 中微半导体设备(上海)有限公司 | 多频脉冲等离子体处理装置及其处理方法和清洗方法 |
DE102017124682B4 (de) * | 2017-10-23 | 2019-06-27 | RF360 Europe GmbH | Wafer-Träger, Verfahren zum Abtragen von Material von einer Oberseite eines Wafers und Verfahren zum Hinzufügen von Material zu einem Wafer |
CN111586957B (zh) * | 2019-02-19 | 2021-05-04 | 大连理工大学 | 一种容性耦合等离子体放电装置 |
CN112614769B (zh) * | 2020-12-11 | 2021-12-31 | 无锡邑文电子科技有限公司 | 一种碳化硅刻蚀工艺腔体装置及使用方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4392932A (en) | 1981-11-12 | 1983-07-12 | Varian Associates, Inc. | Method for obtaining uniform etch by modulating bias on extension member around radio frequency etch table |
JPS6247131A (ja) * | 1985-08-27 | 1987-02-28 | Nec Corp | 反応性イオンエツチング装置 |
US4632719A (en) | 1985-09-18 | 1986-12-30 | Varian Associates, Inc. | Semiconductor etching apparatus with magnetic array and vertical shield |
DE3835153A1 (de) | 1988-10-15 | 1990-04-26 | Leybold Ag | Vorrichtung zum aetzen von substraten durch eine glimmentladung |
US5292399A (en) | 1990-04-19 | 1994-03-08 | Applied Materials, Inc. | Plasma etching apparatus with conductive means for inhibiting arcing |
JP3260168B2 (ja) * | 1991-07-23 | 2002-02-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US5463525A (en) | 1993-12-20 | 1995-10-31 | International Business Machines Corporation | Guard ring electrostatic chuck |
US5573596A (en) | 1994-01-28 | 1996-11-12 | Applied Materials, Inc. | Arc suppression in a plasma processing system |
JP3192370B2 (ja) * | 1995-06-08 | 2001-07-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US5534751A (en) | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
US5942042A (en) | 1997-05-23 | 1999-08-24 | Applied Materials, Inc. | Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system |
US6074488A (en) | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
WO1999014788A1 (en) | 1997-09-16 | 1999-03-25 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
US6051073A (en) * | 1998-02-11 | 2000-04-18 | Silicon Genesis Corporation | Perforated shield for plasma immersion ion implantation |
US5998932A (en) | 1998-06-26 | 1999-12-07 | Lam Research Corporation | Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber |
JP2000030896A (ja) * | 1998-07-10 | 2000-01-28 | Anelva Corp | プラズマ閉込め装置 |
US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
JP2000269196A (ja) * | 1999-03-19 | 2000-09-29 | Toshiba Corp | プラズマ処理方法及びプラズマ処理装置 |
JP2000286242A (ja) * | 1999-03-31 | 2000-10-13 | Tokyo Electron Ltd | プラズマ処理装置 |
WO2000068986A1 (en) * | 1999-05-07 | 2000-11-16 | Tokyo Electron Limited | Method and apparatus for vacuum treatment |
US6241477B1 (en) * | 1999-08-25 | 2001-06-05 | Applied Materials, Inc. | In-situ getter in process cavity of processing chamber |
US6413382B1 (en) * | 2000-11-03 | 2002-07-02 | Applied Materials, Inc. | Pulsed sputtering with a small rotating magnetron |
US8450635B2 (en) * | 2007-03-30 | 2013-05-28 | Lam Research Corporation | Method and apparatus for inducing DC voltage on wafer-facing electrode |
-
2002
- 2002-11-12 US US10/293,898 patent/US6887340B2/en not_active Expired - Lifetime
- 2002-11-13 CN CNB028224922A patent/CN1312727C/zh not_active Expired - Lifetime
- 2002-11-13 JP JP2003544797A patent/JP4750359B2/ja not_active Expired - Lifetime
- 2002-11-13 KR KR1020097022750A patent/KR101094123B1/ko not_active IP Right Cessation
- 2002-11-13 EP EP02780667A patent/EP1446825B1/en not_active Expired - Lifetime
- 2002-11-13 WO PCT/US2002/036557 patent/WO2003043061A1/en active Application Filing
- 2002-11-13 KR KR1020047007242A patent/KR100964827B1/ko active IP Right Grant
-
2009
- 2009-11-19 JP JP2009263851A patent/JP5546216B2/ja not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10529539B2 (en) | 2004-06-21 | 2020-01-07 | Tokyo Electron Limited | Plasma processing apparatus and method |
US10546727B2 (en) | 2004-06-21 | 2020-01-28 | Tokyo Electron Limited | Plasma processing apparatus and method |
Also Published As
Publication number | Publication date |
---|---|
JP5546216B2 (ja) | 2014-07-09 |
WO2003043061A1 (en) | 2003-05-22 |
JP2010050485A (ja) | 2010-03-04 |
EP1446825A1 (en) | 2004-08-18 |
KR101094123B1 (ko) | 2011-12-15 |
KR20090125217A (ko) | 2009-12-03 |
JP2006501631A (ja) | 2006-01-12 |
CN1312727C (zh) | 2007-04-25 |
KR100964827B1 (ko) | 2010-06-22 |
EP1446825B1 (en) | 2012-10-31 |
US20030148611A1 (en) | 2003-08-07 |
CN1585997A (zh) | 2005-02-23 |
KR20050044437A (ko) | 2005-05-12 |
US6887340B2 (en) | 2005-05-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4750359B2 (ja) | エッチング速度の均一性を改善する装置及び方法 | |
US7837825B2 (en) | Confined plasma with adjustable electrode area ratio | |
JP5518174B2 (ja) | プラズマを生成する方法又はプラズマチャンバの操作方法 | |
JP5215875B2 (ja) | プラズマエッチングチャンバのための統合型の容量および誘導電源 | |
US10012248B2 (en) | Annular baffle | |
US11152192B2 (en) | Plasma processing apparatus and method | |
KR101283830B1 (ko) | 전극 피스의 독립적 움직임을 이용한 에칭 레이트 균일성개선 | |
JP2011525694A (ja) | 異なる高さの内側及び外側電極を備えたカソード | |
JP2004079820A (ja) | プラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20051111 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20081024 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081104 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090204 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090402 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090721 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091127 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091215 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110325 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110519 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4750359 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140527 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |