KR20050044437A - 에칭 속도의 균일성을 향상시키기 위한 장치 및 방법 - Google Patents
에칭 속도의 균일성을 향상시키기 위한 장치 및 방법 Download PDFInfo
- Publication number
- KR20050044437A KR20050044437A KR1020047007242A KR20047007242A KR20050044437A KR 20050044437 A KR20050044437 A KR 20050044437A KR 1020047007242 A KR1020047007242 A KR 1020047007242A KR 20047007242 A KR20047007242 A KR 20047007242A KR 20050044437 A KR20050044437 A KR 20050044437A
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- Prior art keywords
- electrode
- edge
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- wafer
- focus ring
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- 238000000034 method Methods 0.000 title claims description 29
- 238000005530 etching Methods 0.000 claims abstract description 38
- 230000009977 dual effect Effects 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 230000000452 restraining effect Effects 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 76
- 230000008569 process Effects 0.000 description 18
- 239000007789 gas Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000003518 caustics Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004401 flow injection analysis Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
Claims (9)
- 고정 전위의 전원에 결합되는 제1 전극과,이중 주파수 RF 전력원에 결합되는 제2 전극과,상기 제1 전극과 상기 제2 전극 사이에 배치되는 복수의 구속 링과,상기 제1 전극, 상기 제2 전극 및 상기 복수의 구속 링을 둘러싸는 챔버와,상기 제2 전극을 실질적으로 둘러싸서 상기 제2 전극을 전기적으로 절연시키는 포커스 링과,상기 포커스 링을 실질적으로 둘러싸는 실드를 포함하고,상기 챔버는 상기 고정 전위의 상기 전원에 결합되는 전기 전도성 재료로 형성되고, 상기 제2 전극의 에지와 상기 실드의 에지 사이의 거리는 적어도 상기 제2 전극의 에지와 상기 제1 전극의 에지 사이의 거리보다 더 작고, 상기 실드는 상기 고정 전위의 상기 전원에 결합되는 전기 전도성 재료로 형성되는 에칭 장치.
- 제1항에 있어서, 상기 제2 전극은 웨이퍼를 지지하는 에칭 장치.
- 제1항에 있어서, 상기 포커스 링은 석영을 포함하는 에칭 장치.
- 제1항에 있어서, 상기 실드는 알루미늄을 포함하는 에칭 장치.
- 제4항에 있어서, 상기 실드 상에 코팅되는 실리콘 층을 더 포함하는 에칭 장치.
- 제5항에 있어서, 상기 실리콘 층은 상기 포커스 링에 걸쳐 부분적으로 내향으로 연장하는 에칭 장치.
- 제1항에 있어서, 상기 제1 전극의 표면은 상기 제2 전극의 표면보다 더 큰 에칭 장치.
- 상부 전극 및 바닥 전극을 가지는 플라즈마 에칭 장치에서 에칭 속도 균일성을 향상시키기 위한 방법이며,전기 절연 링을 이중 주파수 RF 전력원에 결합되는 바닥 전극의 에지 주위에 위치시키는 단계와,접지된 실드를 상기 전기 절연 링 주위에 위치시키는 단계를 포함하고,상기 바닥 전극의 에지와 상기 접지된 실드의 에지 사이의 거리는 적어도 상기 바닥 전극의 에지와 상부 전극의 에지 사이의 거리보다 더 작은 방법.
- 제8항에 있어서, 상기 접지된 실드의 상기 에지와 상부 전극의 상기 에지 사이의 거리를 조정하는 단계를 더 포함하는 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33803401P | 2001-11-13 | 2001-11-13 | |
US60/338,034 | 2001-11-13 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097022750A Division KR101094123B1 (ko) | 2001-11-13 | 2002-11-13 | 에칭 속도의 균일성을 향상시키기 위한 장치 및 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050044437A true KR20050044437A (ko) | 2005-05-12 |
KR100964827B1 KR100964827B1 (ko) | 2010-06-22 |
Family
ID=23323116
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097022750A KR101094123B1 (ko) | 2001-11-13 | 2002-11-13 | 에칭 속도의 균일성을 향상시키기 위한 장치 및 방법 |
KR1020047007242A KR100964827B1 (ko) | 2001-11-13 | 2002-11-13 | 에칭 속도의 균일성을 향상시키기 위한 장치 및 방법 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097022750A KR101094123B1 (ko) | 2001-11-13 | 2002-11-13 | 에칭 속도의 균일성을 향상시키기 위한 장치 및 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6887340B2 (ko) |
EP (1) | EP1446825B1 (ko) |
JP (2) | JP4750359B2 (ko) |
KR (2) | KR101094123B1 (ko) |
CN (1) | CN1312727C (ko) |
WO (1) | WO2003043061A1 (ko) |
Cited By (2)
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US10529539B2 (en) | 2004-06-21 | 2020-01-07 | Tokyo Electron Limited | Plasma processing apparatus and method |
US10546727B2 (en) | 2004-06-21 | 2020-01-28 | Tokyo Electron Limited | Plasma processing apparatus and method |
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US7510665B2 (en) * | 2003-08-15 | 2009-03-31 | Applied Materials, Inc. | Plasma generation and control using dual frequency RF signals |
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US7879185B2 (en) | 2003-12-18 | 2011-02-01 | Applied Materials, Inc. | Dual frequency RF match |
US20050133166A1 (en) * | 2003-12-19 | 2005-06-23 | Applied Materials, Inc. | Tuned potential pedestal for mask etch processing apparatus |
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2002
- 2002-11-12 US US10/293,898 patent/US6887340B2/en not_active Expired - Lifetime
- 2002-11-13 CN CNB028224922A patent/CN1312727C/zh not_active Expired - Lifetime
- 2002-11-13 KR KR1020097022750A patent/KR101094123B1/ko not_active IP Right Cessation
- 2002-11-13 EP EP02780667A patent/EP1446825B1/en not_active Expired - Lifetime
- 2002-11-13 KR KR1020047007242A patent/KR100964827B1/ko active IP Right Grant
- 2002-11-13 JP JP2003544797A patent/JP4750359B2/ja not_active Expired - Lifetime
- 2002-11-13 WO PCT/US2002/036557 patent/WO2003043061A1/en active Application Filing
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2009
- 2009-11-19 JP JP2009263851A patent/JP5546216B2/ja not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10529539B2 (en) | 2004-06-21 | 2020-01-07 | Tokyo Electron Limited | Plasma processing apparatus and method |
US10546727B2 (en) | 2004-06-21 | 2020-01-28 | Tokyo Electron Limited | Plasma processing apparatus and method |
Also Published As
Publication number | Publication date |
---|---|
EP1446825A1 (en) | 2004-08-18 |
JP2010050485A (ja) | 2010-03-04 |
US6887340B2 (en) | 2005-05-03 |
JP2006501631A (ja) | 2006-01-12 |
KR100964827B1 (ko) | 2010-06-22 |
EP1446825B1 (en) | 2012-10-31 |
KR20090125217A (ko) | 2009-12-03 |
KR101094123B1 (ko) | 2011-12-15 |
US20030148611A1 (en) | 2003-08-07 |
CN1585997A (zh) | 2005-02-23 |
CN1312727C (zh) | 2007-04-25 |
JP5546216B2 (ja) | 2014-07-09 |
WO2003043061A1 (en) | 2003-05-22 |
JP4750359B2 (ja) | 2011-08-17 |
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