JP2010034462A5 - - Google Patents

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Publication number
JP2010034462A5
JP2010034462A5 JP2008197508A JP2008197508A JP2010034462A5 JP 2010034462 A5 JP2010034462 A5 JP 2010034462A5 JP 2008197508 A JP2008197508 A JP 2008197508A JP 2008197508 A JP2008197508 A JP 2008197508A JP 2010034462 A5 JP2010034462 A5 JP 2010034462A5
Authority
JP
Japan
Prior art keywords
wafer
double
polishing apparatus
surface plate
side polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008197508A
Other languages
English (en)
Japanese (ja)
Other versions
JP4955624B2 (ja
JP2010034462A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2008197508A external-priority patent/JP4955624B2/ja
Priority to JP2008197508A priority Critical patent/JP4955624B2/ja
Priority to DE112009001875.0T priority patent/DE112009001875B4/de
Priority to KR1020117002430A priority patent/KR101587226B1/ko
Priority to CN200980127186.4A priority patent/CN102089121B/zh
Priority to US13/002,449 priority patent/US8834230B2/en
Priority to PCT/JP2009/003021 priority patent/WO2010013390A1/ja
Priority to SG2013053954A priority patent/SG192518A1/en
Priority to TW098122953A priority patent/TWI478226B/zh
Publication of JP2010034462A publication Critical patent/JP2010034462A/ja
Publication of JP2010034462A5 publication Critical patent/JP2010034462A5/ja
Publication of JP4955624B2 publication Critical patent/JP4955624B2/ja
Application granted granted Critical
Priority to US14/446,847 priority patent/US9108289B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008197508A 2008-07-31 2008-07-31 両面研磨装置 Active JP4955624B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2008197508A JP4955624B2 (ja) 2008-07-31 2008-07-31 両面研磨装置
PCT/JP2009/003021 WO2010013390A1 (ja) 2008-07-31 2009-06-30 ウェーハの研磨方法および両面研磨装置
SG2013053954A SG192518A1 (en) 2008-07-31 2009-06-30 Wafer polishing method
KR1020117002430A KR101587226B1 (ko) 2008-07-31 2009-06-30 웨이퍼의 연마 방법 및 양면 연마 장치
CN200980127186.4A CN102089121B (zh) 2008-07-31 2009-06-30 芯片的研磨方法及双面研磨装置
US13/002,449 US8834230B2 (en) 2008-07-31 2009-06-30 Wafer polishing method and double-side polishing apparatus
DE112009001875.0T DE112009001875B4 (de) 2008-07-31 2009-06-30 Waferpolierverfahren und Doppelseitenpoliervorrichtung
TW098122953A TWI478226B (zh) 2008-07-31 2009-07-07 Grinding method of double - sided grinding device and wafer
US14/446,847 US9108289B2 (en) 2008-07-31 2014-07-30 Double-side polishing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008197508A JP4955624B2 (ja) 2008-07-31 2008-07-31 両面研磨装置

Publications (3)

Publication Number Publication Date
JP2010034462A JP2010034462A (ja) 2010-02-12
JP2010034462A5 true JP2010034462A5 (https=) 2010-10-21
JP4955624B2 JP4955624B2 (ja) 2012-06-20

Family

ID=41738563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008197508A Active JP4955624B2 (ja) 2008-07-31 2008-07-31 両面研磨装置

Country Status (1)

Country Link
JP (1) JP4955624B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6123150B2 (ja) * 2011-08-30 2017-05-10 株式会社Sumco シリコンウェーハ加工量の評価方法およびシリコンウェーハの製造方法
JP6003800B2 (ja) * 2013-05-16 2016-10-05 信越半導体株式会社 ウェーハの両面研磨方法及び両面研磨システム
JP6206388B2 (ja) 2014-12-15 2017-10-04 信越半導体株式会社 シリコンウェーハの研磨方法
JP6222171B2 (ja) * 2015-06-22 2017-11-01 信越半導体株式会社 定寸装置、研磨装置、及び研磨方法
JP6760638B2 (ja) * 2016-04-14 2020-09-23 スピードファム株式会社 平面研磨装置
CN110695788B (zh) * 2019-10-16 2021-05-28 广东博智林机器人有限公司 混凝土边角抹平装置
JP2026052445A (ja) * 2024-09-11 2026-03-24 株式会社Sumco ワークの周方向の厚みばらつきの検出方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3491337B2 (ja) * 1994-05-13 2004-01-26 株式会社デンソー 半導体厚非接触測定装置
US6301009B1 (en) * 1997-12-01 2001-10-09 Zygo Corporation In-situ metrology system and method
JP3367496B2 (ja) * 2000-01-20 2003-01-14 株式会社ニコン 研磨体、平坦化装置、半導体デバイス製造方法、および半導体デバイス
JP2001009699A (ja) * 1999-07-05 2001-01-16 Nichiden Mach Ltd 平面研磨装置
JP2001077068A (ja) * 1999-09-08 2001-03-23 Sumitomo Metal Ind Ltd 半導体ウエハの研磨終点検出方法及びその装置
JP2001105308A (ja) * 1999-10-04 2001-04-17 Asahi Kasei Corp 光伝送路付研磨装置
JP2002018710A (ja) * 2000-07-07 2002-01-22 Canon Inc 基板研磨方法、基板研磨装置、膜厚測定方法及び膜厚測定装置
JP2002100594A (ja) * 2000-09-22 2002-04-05 Komatsu Electronic Metals Co Ltd 平面研磨方法および装置
JP4281255B2 (ja) * 2001-01-25 2009-06-17 株式会社デンソー ウエハ厚計測装置及びウエハ研磨方法
JP2003001559A (ja) * 2001-06-21 2003-01-08 Mitsubishi Electric Corp 化学的機械研磨方法、化学的機械研磨装置およびスラリー供給装置
JP2003057027A (ja) * 2001-08-10 2003-02-26 Ebara Corp 測定装置
JP2006095677A (ja) * 2004-08-30 2006-04-13 Showa Denko Kk 研磨方法
JP4786899B2 (ja) * 2004-12-20 2011-10-05 Ｈｏｙａ株式会社 マスクブランクス用ガラス基板の製造方法，マスクブランクスの製造方法、反射型マスクブランクスの製造方法、露光用マスクの製造方法、反射型マスクの製造方法、及び半導体装置の製造方法
JP2006224233A (ja) * 2005-02-17 2006-08-31 Hoya Corp マスクブランクス用ガラス基板の製造方法及びマスクブランクスの製造方法
JP2006231471A (ja) * 2005-02-25 2006-09-07 Speedfam Co Ltd 両面ポリッシュ加工機とその定寸制御方法
JP4904027B2 (ja) * 2005-08-10 2012-03-28 ニッタ・ハース株式会社 研磨パッド
JP2007290050A (ja) * 2006-04-21 2007-11-08 Hamai Co Ltd 研磨方法及び平面研磨装置

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