NL1035001A1 - Optische emissiespectroscopie procesbewaking en materiaalkarakterisering. - Google Patents
Optische emissiespectroscopie procesbewaking en materiaalkarakterisering.Info
- Publication number
- NL1035001A1 NL1035001A1 NL1035001A NL1035001A NL1035001A1 NL 1035001 A1 NL1035001 A1 NL 1035001A1 NL 1035001 A NL1035001 A NL 1035001A NL 1035001 A NL1035001 A NL 1035001A NL 1035001 A1 NL1035001 A1 NL 1035001A1
- Authority
- NL
- Netherlands
- Prior art keywords
- process monitoring
- optical emission
- emission spectroscopy
- material characterization
- spectroscopy process
- Prior art date
Links
- 238000001636 atomic emission spectroscopy Methods 0.000 title 1
- 238000012512 characterization method Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000012544 monitoring process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/718—Laser microanalysis, i.e. with formation of sample plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N2021/178—Methods for obtaining spatial resolution of the property being measured
- G01N2021/1782—In-depth resolution
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8411—Application to online plant, process monitoring
- G01N2021/8416—Application to online plant, process monitoring and process controlling, not otherwise provided for
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67330607 | 2007-02-09 | ||
US11/673,306 US7718554B2 (en) | 2007-02-09 | 2007-02-09 | Focused laser beam processing |
US68941907 | 2007-03-21 | ||
US11/689,419 US7599048B2 (en) | 2007-02-09 | 2007-03-21 | Optical emission spectroscopy process monitoring and material characterization |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1035001A1 true NL1035001A1 (nl) | 2008-08-12 |
NL1035001C2 NL1035001C2 (nl) | 2011-03-28 |
Family
ID=39597723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1035001A NL1035001C2 (nl) | 2007-02-09 | 2008-02-07 | Optische emissiespectroscopie procesbewaking en materiaalkarakterisering. |
Country Status (5)
Country | Link |
---|---|
US (1) | US7599048B2 (nl) |
JP (1) | JP2008199019A (nl) |
KR (1) | KR20080074700A (nl) |
DE (1) | DE102007049135A1 (nl) |
NL (1) | NL1035001C2 (nl) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7718554B2 (en) * | 2007-02-09 | 2010-05-18 | Wafermasters, Inc. | Focused laser beam processing |
US20080206897A1 (en) * | 2007-02-27 | 2008-08-28 | Woo Sik Yoo | Selective Depth Optical Processing |
US7816152B2 (en) | 2007-04-11 | 2010-10-19 | WaferMaster, Inc. | In situ, ex situ and inline process monitoring, optimization and fabrication |
US20090004368A1 (en) * | 2007-06-29 | 2009-01-01 | Weyerhaeuser Co. | Systems and methods for curing a deposited layer on a substrate |
FR2929011B1 (fr) * | 2008-03-20 | 2013-01-04 | Commissariat Energie Atomique | Procede et dispositif de mesure quantitative a haute cadence de cibles biomoleculaires presentes sur ou dans un support d'analyse biologique. |
WO2009137494A1 (en) * | 2008-05-05 | 2009-11-12 | Applied Spectra, Inc. | Laser ablation apparatus and method |
US10493559B2 (en) * | 2008-07-09 | 2019-12-03 | Fei Company | Method and apparatus for laser machining |
JP6245805B2 (ja) * | 2009-08-07 | 2017-12-13 | スマーター アロイズ インコーポレーテッド | 形状記憶材料の処理方法および形状記憶材料の処理装置 |
DE102010040611A1 (de) * | 2010-09-13 | 2012-03-15 | Sulfurcell Solartechnik Gmbh | Spektrometer zur Erfassung opto-elektronischer Materialeigenschaften einer Halbleiterprobe |
JP5953198B2 (ja) * | 2011-09-28 | 2016-07-20 | 株式会社リプス・ワークス | 極短パルスレーザによる多次元パターン形成装置及び形成方法 |
JP5818646B2 (ja) * | 2011-11-15 | 2015-11-18 | 住友重機械工業株式会社 | レーザ加工装置、及び、レーザ加工方法 |
JP6261844B2 (ja) * | 2012-02-20 | 2018-01-17 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
US9453801B2 (en) | 2012-05-25 | 2016-09-27 | Kla-Tencor Corporation | Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems |
FR2996000B1 (fr) | 2012-09-25 | 2014-10-17 | Univ Claude Bernard Lyon | Installation de mesures spectroscopiques a partir d'un plasma induit par laser |
TWI632013B (zh) * | 2013-03-15 | 2018-08-11 | 美商伊雷克托科學工業股份有限公司 | 用以處理工件上或之內的特徵的雷射處理設備和用於雷射處理工件的方法 |
DE102013008396B4 (de) | 2013-05-17 | 2015-04-02 | G. Rau Gmbh & Co. Kg | Verfahren und Vorrichtung zum Umschmelzen und/oder Umschmelzlegieren metallischer Werkstoffe, insbesondere von Nitinol |
KR101538028B1 (ko) * | 2014-04-11 | 2015-07-22 | 한국기계연구원 | 박막의 가공 두께 제어 및 모니터링을 위한 실시간 측정 및 가공 장치 및 방법 |
DE102014208371B4 (de) * | 2014-05-05 | 2016-09-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Laserbearbeitung einer Oberfläche |
US20150346103A1 (en) * | 2014-05-29 | 2015-12-03 | Bwt Property, Inc. | Laser Induced Breakdown Spectroscopy (LIBS) Apparatus and Method for Performing Spectral Imaging of a Sample Surface |
DE102015202575A1 (de) * | 2015-02-12 | 2016-08-18 | Robert Bosch Gmbh | Vorrichtung zum Bearbeiten eines Substrats |
US9874524B2 (en) | 2016-03-04 | 2018-01-23 | Applied Materials, Inc. | In-situ spatially resolved plasma monitoring by using optical emission spectroscopy |
US10705024B2 (en) * | 2017-03-17 | 2020-07-07 | Lincoln Global, Inc. | System and method for positive metal identification and intelligent consumable identification |
TWI686255B (zh) * | 2017-11-01 | 2020-03-01 | 台灣愛司帝科技股份有限公司 | 薄型半導體晶圓的切割裝置及其切割方法 |
EP3788684A1 (en) * | 2018-05-03 | 2021-03-10 | Quantum-Si Incorporated | Characterizing an optical element |
KR102364049B1 (ko) * | 2020-11-03 | 2022-02-17 | 한국광기술원 | 레이저 마킹기를 이용한 식자재 마킹 시스템 및 식자재 운반 컨베이어 벨트 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5998759A (en) * | 1996-12-24 | 1999-12-07 | General Scanning, Inc. | Laser processing |
US6568899B1 (en) | 1999-11-30 | 2003-05-27 | Wafermasters, Inc. | Wafer processing system including a robot |
US7157038B2 (en) * | 2000-09-20 | 2007-01-02 | Electro Scientific Industries, Inc. | Ultraviolet laser ablative patterning of microstructures in semiconductors |
US6532068B2 (en) * | 2001-07-17 | 2003-03-11 | National Research Council Of Canada | Method and apparatus for depth profile analysis by laser induced plasma spectros copy |
US6873419B2 (en) * | 2001-11-16 | 2005-03-29 | National Research Council Of Canada | Method and apparatus for three-dimensional compositional mapping of heterogeneous materials |
JP2006073866A (ja) * | 2004-09-03 | 2006-03-16 | Horiba Ltd | 半導体材料の応力測定方法及びその装置 |
US7440097B2 (en) * | 2006-06-27 | 2008-10-21 | General Electric Company | Laser plasma spectroscopy apparatus and method for in situ depth profiling |
-
2007
- 2007-03-21 US US11/689,419 patent/US7599048B2/en not_active Expired - Fee Related
- 2007-10-12 DE DE102007049135A patent/DE102007049135A1/de not_active Withdrawn
- 2007-10-23 KR KR1020070106541A patent/KR20080074700A/ko not_active Application Discontinuation
-
2008
- 2008-02-07 NL NL1035001A patent/NL1035001C2/nl not_active IP Right Cessation
- 2008-02-08 JP JP2008028522A patent/JP2008199019A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL1035001C2 (nl) | 2011-03-28 |
US20080192250A1 (en) | 2008-08-14 |
JP2008199019A (ja) | 2008-08-28 |
DE102007049135A1 (de) | 2008-08-14 |
KR20080074700A (ko) | 2008-08-13 |
US7599048B2 (en) | 2009-10-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AD1A | A request for search or an international type search has been filed | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20120901 |