NL1035001A1 - Optische emissiespectroscopie procesbewaking en materiaalkarakterisering. - Google Patents

Optische emissiespectroscopie procesbewaking en materiaalkarakterisering.

Info

Publication number
NL1035001A1
NL1035001A1 NL1035001A NL1035001A NL1035001A1 NL 1035001 A1 NL1035001 A1 NL 1035001A1 NL 1035001 A NL1035001 A NL 1035001A NL 1035001 A NL1035001 A NL 1035001A NL 1035001 A1 NL1035001 A1 NL 1035001A1
Authority
NL
Netherlands
Prior art keywords
process monitoring
optical emission
emission spectroscopy
material characterization
spectroscopy process
Prior art date
Application number
NL1035001A
Other languages
English (en)
Other versions
NL1035001C2 (nl
Inventor
Woo Sik Yoo
Kitaek Kang
Original Assignee
Wafermasters Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/673,306 external-priority patent/US7718554B2/en
Application filed by Wafermasters Inc filed Critical Wafermasters Inc
Publication of NL1035001A1 publication Critical patent/NL1035001A1/nl
Application granted granted Critical
Publication of NL1035001C2 publication Critical patent/NL1035001C2/nl

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/718Laser microanalysis, i.e. with formation of sample plasma
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/082Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N2021/178Methods for obtaining spatial resolution of the property being measured
    • G01N2021/1782In-depth resolution
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N2021/8411Application to online plant, process monitoring
    • G01N2021/8416Application to online plant, process monitoring and process controlling, not otherwise provided for

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Laser Beam Processing (AREA)
NL1035001A 2007-02-09 2008-02-07 Optische emissiespectroscopie procesbewaking en materiaalkarakterisering. NL1035001C2 (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US67330607 2007-02-09
US11/673,306 US7718554B2 (en) 2007-02-09 2007-02-09 Focused laser beam processing
US68941907 2007-03-21
US11/689,419 US7599048B2 (en) 2007-02-09 2007-03-21 Optical emission spectroscopy process monitoring and material characterization

Publications (2)

Publication Number Publication Date
NL1035001A1 true NL1035001A1 (nl) 2008-08-12
NL1035001C2 NL1035001C2 (nl) 2011-03-28

Family

ID=39597723

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1035001A NL1035001C2 (nl) 2007-02-09 2008-02-07 Optische emissiespectroscopie procesbewaking en materiaalkarakterisering.

Country Status (5)

Country Link
US (1) US7599048B2 (nl)
JP (1) JP2008199019A (nl)
KR (1) KR20080074700A (nl)
DE (1) DE102007049135A1 (nl)
NL (1) NL1035001C2 (nl)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7718554B2 (en) * 2007-02-09 2010-05-18 Wafermasters, Inc. Focused laser beam processing
US20080206897A1 (en) * 2007-02-27 2008-08-28 Woo Sik Yoo Selective Depth Optical Processing
US7816152B2 (en) 2007-04-11 2010-10-19 WaferMaster, Inc. In situ, ex situ and inline process monitoring, optimization and fabrication
US20090004368A1 (en) * 2007-06-29 2009-01-01 Weyerhaeuser Co. Systems and methods for curing a deposited layer on a substrate
FR2929011B1 (fr) * 2008-03-20 2013-01-04 Commissariat Energie Atomique Procede et dispositif de mesure quantitative a haute cadence de cibles biomoleculaires presentes sur ou dans un support d'analyse biologique.
WO2009137494A1 (en) * 2008-05-05 2009-11-12 Applied Spectra, Inc. Laser ablation apparatus and method
US10493559B2 (en) * 2008-07-09 2019-12-03 Fei Company Method and apparatus for laser machining
JP6245805B2 (ja) * 2009-08-07 2017-12-13 スマーター アロイズ インコーポレーテッド 形状記憶材料の処理方法および形状記憶材料の処理装置
DE102010040611A1 (de) * 2010-09-13 2012-03-15 Sulfurcell Solartechnik Gmbh Spektrometer zur Erfassung opto-elektronischer Materialeigenschaften einer Halbleiterprobe
JP5953198B2 (ja) * 2011-09-28 2016-07-20 株式会社リプス・ワークス 極短パルスレーザによる多次元パターン形成装置及び形成方法
JP5818646B2 (ja) * 2011-11-15 2015-11-18 住友重機械工業株式会社 レーザ加工装置、及び、レーザ加工方法
JP6261844B2 (ja) * 2012-02-20 2018-01-17 株式会社ディスコ レーザー加工方法およびレーザー加工装置
US9453801B2 (en) 2012-05-25 2016-09-27 Kla-Tencor Corporation Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems
FR2996000B1 (fr) 2012-09-25 2014-10-17 Univ Claude Bernard Lyon Installation de mesures spectroscopiques a partir d'un plasma induit par laser
TWI632013B (zh) * 2013-03-15 2018-08-11 美商伊雷克托科學工業股份有限公司 用以處理工件上或之內的特徵的雷射處理設備和用於雷射處理工件的方法
DE102013008396B4 (de) 2013-05-17 2015-04-02 G. Rau Gmbh & Co. Kg Verfahren und Vorrichtung zum Umschmelzen und/oder Umschmelzlegieren metallischer Werkstoffe, insbesondere von Nitinol
KR101538028B1 (ko) * 2014-04-11 2015-07-22 한국기계연구원 박막의 가공 두께 제어 및 모니터링을 위한 실시간 측정 및 가공 장치 및 방법
DE102014208371B4 (de) * 2014-05-05 2016-09-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Laserbearbeitung einer Oberfläche
US20150346103A1 (en) * 2014-05-29 2015-12-03 Bwt Property, Inc. Laser Induced Breakdown Spectroscopy (LIBS) Apparatus and Method for Performing Spectral Imaging of a Sample Surface
DE102015202575A1 (de) * 2015-02-12 2016-08-18 Robert Bosch Gmbh Vorrichtung zum Bearbeiten eines Substrats
US9874524B2 (en) 2016-03-04 2018-01-23 Applied Materials, Inc. In-situ spatially resolved plasma monitoring by using optical emission spectroscopy
US10705024B2 (en) * 2017-03-17 2020-07-07 Lincoln Global, Inc. System and method for positive metal identification and intelligent consumable identification
TWI686255B (zh) * 2017-11-01 2020-03-01 台灣愛司帝科技股份有限公司 薄型半導體晶圓的切割裝置及其切割方法
EP3788684A1 (en) * 2018-05-03 2021-03-10 Quantum-Si Incorporated Characterizing an optical element
KR102364049B1 (ko) * 2020-11-03 2022-02-17 한국광기술원 레이저 마킹기를 이용한 식자재 마킹 시스템 및 식자재 운반 컨베이어 벨트

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5998759A (en) * 1996-12-24 1999-12-07 General Scanning, Inc. Laser processing
US6568899B1 (en) 1999-11-30 2003-05-27 Wafermasters, Inc. Wafer processing system including a robot
US7157038B2 (en) * 2000-09-20 2007-01-02 Electro Scientific Industries, Inc. Ultraviolet laser ablative patterning of microstructures in semiconductors
US6532068B2 (en) * 2001-07-17 2003-03-11 National Research Council Of Canada Method and apparatus for depth profile analysis by laser induced plasma spectros copy
US6873419B2 (en) * 2001-11-16 2005-03-29 National Research Council Of Canada Method and apparatus for three-dimensional compositional mapping of heterogeneous materials
JP2006073866A (ja) * 2004-09-03 2006-03-16 Horiba Ltd 半導体材料の応力測定方法及びその装置
US7440097B2 (en) * 2006-06-27 2008-10-21 General Electric Company Laser plasma spectroscopy apparatus and method for in situ depth profiling

Also Published As

Publication number Publication date
NL1035001C2 (nl) 2011-03-28
US20080192250A1 (en) 2008-08-14
JP2008199019A (ja) 2008-08-28
DE102007049135A1 (de) 2008-08-14
KR20080074700A (ko) 2008-08-13
US7599048B2 (en) 2009-10-06

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Effective date: 20120901