JP2010030853A5 - - Google Patents
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- Publication number
- JP2010030853A5 JP2010030853A5 JP2008195999A JP2008195999A JP2010030853A5 JP 2010030853 A5 JP2010030853 A5 JP 2010030853A5 JP 2008195999 A JP2008195999 A JP 2008195999A JP 2008195999 A JP2008195999 A JP 2008195999A JP 2010030853 A5 JP2010030853 A5 JP 2010030853A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon single
- sample tube
- convex portion
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 8
- 239000013078 crystal Substances 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 8
- 239000010703 silicon Substances 0.000 claims 8
- 239000002019 doping agent Substances 0.000 claims 3
- 230000003028 elevating effect Effects 0.000 claims 3
- 239000000155 melt Substances 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008195999A JP5270996B2 (ja) | 2008-07-30 | 2008-07-30 | シリコン単結晶引上装置 |
| EP09802962A EP2330234B1 (en) | 2008-07-30 | 2009-07-28 | Silicon single crystal pull-up apparatus |
| PCT/JP2009/063440 WO2010013719A1 (ja) | 2008-07-30 | 2009-07-28 | シリコン単結晶引上装置 |
| US13/056,017 US8920561B2 (en) | 2008-07-30 | 2009-07-28 | Silicon single crystal pull-up apparatus that pulls a doped silicon single crystal from a melt |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008195999A JP5270996B2 (ja) | 2008-07-30 | 2008-07-30 | シリコン単結晶引上装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010030853A JP2010030853A (ja) | 2010-02-12 |
| JP2010030853A5 true JP2010030853A5 (https=) | 2011-09-15 |
| JP5270996B2 JP5270996B2 (ja) | 2013-08-21 |
Family
ID=41610419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008195999A Active JP5270996B2 (ja) | 2008-07-30 | 2008-07-30 | シリコン単結晶引上装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8920561B2 (https=) |
| EP (1) | EP2330234B1 (https=) |
| JP (1) | JP5270996B2 (https=) |
| WO (1) | WO2010013719A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5329143B2 (ja) * | 2008-07-30 | 2013-10-30 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン単結晶引上装置 |
| MY166030A (en) * | 2011-04-20 | 2018-05-21 | Gtat Ip Holding Llc | Side feed system for czochralski growth of silicon ingots |
| US10202704B2 (en) | 2011-04-20 | 2019-02-12 | Gtat Ip Holding Llc | Side feed system for Czochralski growth of silicon ingots |
| KR101390798B1 (ko) | 2012-01-06 | 2014-05-02 | 주식회사 엘지실트론 | 융액에 도펀트를 투입하기 위한 장치 |
| US10233562B2 (en) | 2013-04-24 | 2019-03-19 | Sumco Techxiv Corporation | Method for producing single crystal, and method for producing silicon wafer |
| JP6631460B2 (ja) | 2016-10-03 | 2020-01-15 | 株式会社Sumco | シリコン単結晶の製造方法およびシリコン単結晶 |
| JP6702141B2 (ja) * | 2016-11-01 | 2020-05-27 | 信越半導体株式会社 | 単結晶引上げ装置 |
| US11585010B2 (en) | 2019-06-28 | 2023-02-21 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606920B2 (ja) * | 1982-11-12 | 1985-02-21 | 工業技術院長 | ガリウム砒素単結晶製造装置 |
| JPS59190292A (ja) | 1983-04-08 | 1984-10-29 | Shin Etsu Handotai Co Ltd | 半導体シリコン単結晶の抵抗率制御方法 |
| JPS61227986A (ja) * | 1985-03-30 | 1986-10-11 | Shin Etsu Handotai Co Ltd | 単結晶シリコン棒の製造方法 |
| DE4106589C2 (de) * | 1991-03-01 | 1997-04-24 | Wacker Siltronic Halbleitermat | Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski |
| JPH09227275A (ja) * | 1996-02-28 | 1997-09-02 | Sumitomo Sitix Corp | ドープ剤添加装置 |
| CN1432075A (zh) | 2000-05-10 | 2003-07-23 | Memc电子材料有限公司 | 用于将砷掺杂剂加入硅晶体生长工艺中的方法和装置 |
| US6312517B1 (en) * | 2000-05-11 | 2001-11-06 | Memc Electronic Materials, Inc. | Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
| JP2005247671A (ja) | 2004-03-08 | 2005-09-15 | Toshiba Ceramics Co Ltd | 単結晶引上装置 |
| JP4356517B2 (ja) * | 2004-05-28 | 2009-11-04 | 株式会社Ｓｕｍｃｏ | シリコン単結晶引上装置およびシリコン単結晶の製造方法 |
| JP5329143B2 (ja) * | 2008-07-30 | 2013-10-30 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン単結晶引上装置 |
-
2008
- 2008-07-30 JP JP2008195999A patent/JP5270996B2/ja active Active
-
2009
- 2009-07-28 WO PCT/JP2009/063440 patent/WO2010013719A1/ja not_active Ceased
- 2009-07-28 EP EP09802962A patent/EP2330234B1/en active Active
- 2009-07-28 US US13/056,017 patent/US8920561B2/en active Active
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