JP2008280212A5 - - Google Patents

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Publication number
JP2008280212A5
JP2008280212A5 JP2007125848A JP2007125848A JP2008280212A5 JP 2008280212 A5 JP2008280212 A5 JP 2008280212A5 JP 2007125848 A JP2007125848 A JP 2007125848A JP 2007125848 A JP2007125848 A JP 2007125848A JP 2008280212 A5 JP2008280212 A5 JP 2008280212A5
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JP
Japan
Prior art keywords
single crystal
producing
pulling
dopant
rectifying member
Prior art date
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Granted
Application number
JP2007125848A
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English (en)
Japanese (ja)
Other versions
JP5172202B2 (ja
JP2008280212A (ja
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Publication date
Application filed filed Critical
Priority to JP2007125848A priority Critical patent/JP5172202B2/ja
Priority claimed from JP2007125848A external-priority patent/JP5172202B2/ja
Priority to PCT/JP2008/058483 priority patent/WO2008142993A1/ja
Priority to DE112008000033.6T priority patent/DE112008000033B4/de
Priority to US12/515,730 priority patent/US8110042B2/en
Publication of JP2008280212A publication Critical patent/JP2008280212A/ja
Publication of JP2008280212A5 publication Critical patent/JP2008280212A5/ja
Application granted granted Critical
Publication of JP5172202B2 publication Critical patent/JP5172202B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007125848A 2007-05-10 2007-05-10 単結晶の製造方法 Active JP5172202B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007125848A JP5172202B2 (ja) 2007-05-10 2007-05-10 単結晶の製造方法
PCT/JP2008/058483 WO2008142993A1 (ja) 2007-05-10 2008-05-07 単結晶の製造方法
DE112008000033.6T DE112008000033B4 (de) 2007-05-10 2008-05-07 Verfahren zum Herstellen eines Einkristalls
US12/515,730 US8110042B2 (en) 2007-05-10 2008-05-07 Method for manufacturing single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007125848A JP5172202B2 (ja) 2007-05-10 2007-05-10 単結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2008280212A JP2008280212A (ja) 2008-11-20
JP2008280212A5 true JP2008280212A5 (https=) 2010-12-16
JP5172202B2 JP5172202B2 (ja) 2013-03-27

Family

ID=40031708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007125848A Active JP5172202B2 (ja) 2007-05-10 2007-05-10 単結晶の製造方法

Country Status (4)

Country Link
US (1) US8110042B2 (https=)
JP (1) JP5172202B2 (https=)
DE (1) DE112008000033B4 (https=)
WO (1) WO2008142993A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5226496B2 (ja) * 2008-12-17 2013-07-03 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
MY159737A (en) 2010-09-03 2017-01-31 Gtat Ip Holding Llc Silicon single crystal doped with gallium, indium, or aluminum
KR101252915B1 (ko) * 2010-09-06 2013-04-09 주식회사 엘지실트론 단결정 잉곳 제조방법
KR101303422B1 (ko) * 2011-03-28 2013-09-05 주식회사 엘지실트론 단결정 잉곳의 제조방법 및 이에 의해 제조된 단결정 잉곳과 웨이퍼
WO2013031091A1 (ja) * 2011-09-01 2013-03-07 信越半導体株式会社 シリコン単結晶の製造方法
KR101384060B1 (ko) 2012-08-03 2014-04-09 주식회사 엘지실트론 실리콘 단결정 잉곳 성장 방법
CN113417003A (zh) * 2021-06-22 2021-09-21 宁夏中欣晶圆半导体科技有限公司 能够降低头部氧含量的大直径单晶硅生产方法及装置
JP7359241B2 (ja) * 2022-03-15 2023-10-11 株式会社Sumco シリコン単結晶の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
EP0509312B1 (en) * 1991-04-16 1995-08-23 Sumitomo Electric Industries, Limited Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor
JP2978607B2 (ja) * 1991-09-17 1999-11-15 新日本製鐵株式会社 シリコン単結晶の製造方法
EP0625595B1 (en) * 1993-03-29 2001-09-19 Research Development Corporation Of Japan Control of oxygen concentration in single crystal pulled up from melt containing group-V element
JP2760932B2 (ja) * 1993-03-29 1998-06-04 科学技術振興事業団 単結晶引上げ用Ｓｉ融液の酸素濃度制御方法
US5477805A (en) 1993-12-28 1995-12-26 Research Development Corporation Of Japan Preparation of silicon melt for use in pull method of manufacturing single crystal
JP2691393B2 (ja) 1993-12-28 1997-12-17 科学技術振興事業団 単結晶引上げ用Ｓｉ融液の調整方法
JPH09227275A (ja) 1996-02-28 1997-09-02 Sumitomo Sitix Corp ドープ剤添加装置
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
JP3787452B2 (ja) * 1999-02-10 2006-06-21 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
WO2001063027A1 (en) * 2000-02-28 2001-08-30 Shin-Etsu Handotai Co., Ltd Method for preparing silicon single crystal and silicon single crystal
DE10250822B4 (de) 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium
JP4153293B2 (ja) * 2002-12-17 2008-09-24 コバレントマテリアル株式会社 シリコン単結晶引上方法
JP2007112663A (ja) * 2005-10-20 2007-05-10 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置および製造方法

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