JP2010021416A5 - - Google Patents
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- Publication number
- JP2010021416A5 JP2010021416A5 JP2008181456A JP2008181456A JP2010021416A5 JP 2010021416 A5 JP2010021416 A5 JP 2010021416A5 JP 2008181456 A JP2008181456 A JP 2008181456A JP 2008181456 A JP2008181456 A JP 2008181456A JP 2010021416 A5 JP2010021416 A5 JP 2010021416A5
- Authority
- JP
- Japan
- Prior art keywords
- resist pattern
- main surface
- semiconductor substrate
- forming
- organic material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims 13
- 239000000758 substrate Substances 0.000 claims 10
- 239000011368 organic material Substances 0.000 claims 6
- 150000002500 ions Chemical class 0.000 claims 5
- 229910052732 germanium Inorganic materials 0.000 claims 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 238000004132 cross linking Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008181456A JP2010021416A (ja) | 2008-07-11 | 2008-07-11 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008181456A JP2010021416A (ja) | 2008-07-11 | 2008-07-11 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010021416A JP2010021416A (ja) | 2010-01-28 |
| JP2010021416A5 true JP2010021416A5 (enExample) | 2011-08-25 |
Family
ID=41706003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008181456A Pending JP2010021416A (ja) | 2008-07-11 | 2008-07-11 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010021416A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9268899B2 (en) * | 2013-03-14 | 2016-02-23 | Silicon Storage Technology, Inc. | Transistor design for use in advanced nanometer flash memory devices |
| CN112038391B (zh) * | 2019-06-03 | 2024-05-24 | 上海先进半导体制造有限公司 | 超结场效应晶体管的制作方法 |
| CN114695094B (zh) * | 2020-12-29 | 2025-07-25 | 芯恩（青岛）集成电路有限公司 | 一种抑制wpe的阱离子注入方法 |
| CN114695093B (zh) * | 2020-12-29 | 2025-07-11 | 芯恩（青岛）集成电路有限公司 | 一种阱离子注入方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100633994B1 (ko) * | 2005-07-26 | 2006-10-13 | 동부일렉트로닉스 주식회사 | 반도체 소자의 웰 포토레지스트 패턴 및 그 형성 방법 |
| JP2007305858A (ja) * | 2006-05-12 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
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2008
- 2008-07-11 JP JP2008181456A patent/JP2010021416A/ja active Pending