JP2010021416A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2010021416A JP2010021416A JP2008181456A JP2008181456A JP2010021416A JP 2010021416 A JP2010021416 A JP 2010021416A JP 2008181456 A JP2008181456 A JP 2008181456A JP 2008181456 A JP2008181456 A JP 2008181456A JP 2010021416 A JP2010021416 A JP 2010021416A
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- JP
- Japan
- Prior art keywords
- resist pattern
- semiconductor substrate
- main surface
- ions
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 150000002500 ions Chemical class 0.000 claims abstract description 71
- 239000011368 organic material Substances 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 229910052732 germanium Inorganic materials 0.000 claims description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 239000003054 catalyst Substances 0.000 claims description 3
- 238000004132 cross linking Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000001723 curing Methods 0.000 claims 1
- 238000013007 heat curing Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 29
- 239000006117 anti-reflective coating Substances 0.000 abstract description 3
- 238000005468 ion implantation Methods 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 230000008569 process Effects 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 238000009826 distribution Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000975 dye Substances 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000000342 Monte Carlo simulation Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000987 azo dye Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008181456A JP2010021416A (ja) | 2008-07-11 | 2008-07-11 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008181456A JP2010021416A (ja) | 2008-07-11 | 2008-07-11 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010021416A true JP2010021416A (ja) | 2010-01-28 |
| JP2010021416A5 JP2010021416A5 (enExample) | 2011-08-25 |
Family
ID=41706003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008181456A Pending JP2010021416A (ja) | 2008-07-11 | 2008-07-11 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010021416A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019067480A (ja) * | 2013-03-14 | 2019-04-25 | シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． | 高度ナノメートルフラッシュメモリ装置において使用される改良形トランジスタ設計 |
| CN112038391A (zh) * | 2019-06-03 | 2020-12-04 | 上海先进半导体制造股份有限公司 | 超结场效应晶体管的制作方法 |
| CN114695093A (zh) * | 2020-12-29 | 2022-07-01 | 芯恩（青岛）集成电路有限公司 | 一种阱离子注入方法 |
| CN114695094A (zh) * | 2020-12-29 | 2022-07-01 | 芯恩（青岛）集成电路有限公司 | 一种抑制wpe的阱离子注入方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007036249A (ja) * | 2005-07-26 | 2007-02-08 | Dongbu Electronics Co Ltd | 半導体素子のウェルフォトレジストパターン及びその形成方法 |
| JP2007305858A (ja) * | 2006-05-12 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
-
2008
- 2008-07-11 JP JP2008181456A patent/JP2010021416A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007036249A (ja) * | 2005-07-26 | 2007-02-08 | Dongbu Electronics Co Ltd | 半導体素子のウェルフォトレジストパターン及びその形成方法 |
| JP2007305858A (ja) * | 2006-05-12 | 2007-11-22 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
Non-Patent Citations (1)
| Title |
|---|
| JPN6013037273; Ｉｇｏｒ Ｐｏｌｉｓｈｃｈｕｋ: 'ＣＭＯＳ Ｖｔ-Ｃｏｎｔｒｏｌ Ｉｍｐｒｏｖｅｍｅｎｔ ｔｈｒｏｕｇｈ Ｉｍｐｌａｎｔ Ｌａｔｅｒａｌ Ｓｃａｔｔｅｒ Ｅｌｉｍｉｎａｔｉｏｎ' ＩＥＥＥ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｓｙｍｐｏｓｉｕｍ ｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ , 200509, １９３-１９６頁 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019067480A (ja) * | 2013-03-14 | 2019-04-25 | シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． | 高度ナノメートルフラッシュメモリ装置において使用される改良形トランジスタ設計 |
| CN112038391A (zh) * | 2019-06-03 | 2020-12-04 | 上海先进半导体制造股份有限公司 | 超结场效应晶体管的制作方法 |
| CN112038391B (zh) * | 2019-06-03 | 2024-05-24 | 上海先进半导体制造有限公司 | 超结场效应晶体管的制作方法 |
| CN114695093A (zh) * | 2020-12-29 | 2022-07-01 | 芯恩（青岛）集成电路有限公司 | 一种阱离子注入方法 |
| CN114695094A (zh) * | 2020-12-29 | 2022-07-01 | 芯恩（青岛）集成电路有限公司 | 一种抑制wpe的阱离子注入方法 |
| CN114695094B (zh) * | 2020-12-29 | 2025-07-25 | 芯恩（青岛）集成电路有限公司 | 一种抑制wpe的阱离子注入方法 |
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