JP2010021274A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2010021274A
JP2010021274A JP2008179207A JP2008179207A JP2010021274A JP 2010021274 A JP2010021274 A JP 2010021274A JP 2008179207 A JP2008179207 A JP 2008179207A JP 2008179207 A JP2008179207 A JP 2008179207A JP 2010021274 A JP2010021274 A JP 2010021274A
Authority
JP
Japan
Prior art keywords
type gaas
gaas
chip
layer
metal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008179207A
Other languages
English (en)
Inventor
Satoshi Suzuki
敏 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2008179207A priority Critical patent/JP2010021274A/ja
Priority to US12/260,494 priority patent/US7719087B2/en
Publication of JP2010021274A publication Critical patent/JP2010021274A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

【課題】ＧａＡｓチップの耐湿性を向上させることができる半導体装置を得る。
【解決手段】ＧａＡｓチップ１４は樹脂２６で封止されている。ＧａＡｓチップ１４は、ｐ型ＧａＡｓベース層３４（ｐ型ＧａＡｓ層）と、その上に形成されたｎ型ＧａＡｓエミッタ層３６（ｎ型ＧａＡｓ層）を有する。ＧａＡｓチップ１４の外周部においてｎ型ＧａＡｓエミッタ層３６上に金属電極１８が形成されている。この金属電極１８には正電圧が印加される。ＧａＡｓチップ１４の中央部に形成された素子領域２０と金属電極１８との間において、ｐ型ＧａＡｓベース層３４とｎ型ＧａＡｓエミッタ層３６に半絶縁性領域３８が形成されている。半絶縁性領域３８よりも外側において、ｐ型ＧａＡｓベース層３４と金属電極１８は接続部４０により電気的に接続されている。
【選択図】図３

Description

本発明は、ＧａＡｓチップを樹脂で封止した半導体装置に関し、特にＧａＡｓチップの耐湿性を向上させることができる半導体装置に関するものである。
半導体チップを樹脂で封止した樹脂封止型の半導体装置が提案されている（例えば、特許文献１参照）。例えば、半導体チップとしてＧａＡｓチップが用いられ、ＧａＡｓチップの外周部に電極が形成され、ＧａＡｓチップの中央部に素子領域が形成される。
特開昭６０−１６７４３２号公報
このような樹脂封止型の半導体装置は、高温多湿の環境下において、樹脂の表面や、ＧａＡｓチップが実装されたプリント回路基板と樹脂の境界から水分が浸入しやすい。この水分が原因となって、正電圧が印加される金属電極や素子領域の周辺においてＧａＡｓチップの表面が酸化され、素子が劣化故障するという問題があった。
本発明は、上述のような課題を解決するためになされたもので、その目的は、ＧａＡｓチップの耐湿性を向上させることができる半導体装置を得るものである。
本発明は、ＧａＡｓチップを樹脂で封止した半導体装置であって、前記ＧａＡｓチップは、ｐ型ＧａＡｓ層と、前記ｐ型ＧａＡｓ層上に形成されたｎ型ＧａＡｓ層と、前記ＧａＡｓチップの外周部において前記ｎ型ＧａＡｓ層上に形成され、正電圧が印加される金属電極と、前記ＧａＡｓチップの中央部に形成された素子領域と、前記金属電極と前記素子領域との間において前記ｐ型ＧａＡｓ層と前記ｎ型ＧａＡｓ層に形成された半絶縁性領域と、前記半絶縁性領域よりも外側において、前記ｐ型ＧａＡｓ層と前記金属電極とを電気的に接続する接続部とを有することを特徴とする半導体装置である。
本発明により、ＧａＡｓチップの耐湿性を向上させることができる。
実施の形態１．
図１は本発明の実施の形態１に係る半導体装置の内部を示す平面図であり、図２は図１のＡ−Ａ´における断面図である。
樹脂製又はセラミック製のプリント回路基板１０上に、接地されたダイパッド１２が設けられている。増幅器などが形成されたＧａＡｓチップ１４が、導電性の接着剤１６によりダイパッド１２上に実装されている。ＧａＡｓチップ１４の外周部に金属電極１８が形成され、ＧａＡｓチップ１４の中央部に、配線や半導体素子などを有する素子領域２０が形成されている。
プリント回路基板１０の表層に設けられた電気回路２２とＧａＡｓチップ１４の金属電極１８は金属ワイヤ２４により接続されている。ＧａＡｓチップ１４は樹脂２６で封止されている。なお、チップ面積を削減するため、チップ外周部まで金属電極１８や素子領域２０を配置している。領域２８は、ＧａＡｓチップ１４表面の酸化を防ぎたい領域である。
図３は図２のチップ端部を示す拡大断面図である。ＧａＡｓチップ１４は、半絶縁性ＧａＡｓ基板３０上に、ｎ型ＧａＡｓコレクタ層３２、ｐ型ＧａＡｓベース層３４（ｐ型ＧａＡｓ層）及びｎ型ＧａＡｓエミッタ層３６（ｎ型ＧａＡｓ層）が順番に形成されたｎｐｎ型バイポーラトランジスタを有する。なお、ｎ型ＧａＡｓコレクタ層３２、ｐ型ＧａＡｓベース層３４及びｎ型ＧａＡｓエミッタ層３６は、エピタキシャル成長により形成してもよいし、イオン注入により形成してもよい。
ＧａＡｓチップ１４の外周部においてｎ型ＧａＡｓエミッタ層３６上に金属電極１８が形成されている。この金属電極１８には金属ワイヤ２４を介して正電圧が印加される。ＧａＡｓチップ１４の中央部に形成された素子領域２０と金属電極１８との間において、イオン注入によりｎ型ＧａＡｓコレクタ層３２とｐ型ＧａＡｓベース層３４とｎ型ＧａＡｓエミッタ層３６に半絶縁性領域３８が形成されている。
本実施の形態では、半絶縁性領域３８よりも外側において、ｐ型ＧａＡｓベース層３４と金属電極１８は、ｎ型ＧａＡｓエミッタ層３６を貫通する接続部４０により電気的に接続されている。
次に、本実施の形態に係る半導体装置の効果について、図４に示す比較例と比較しながら説明する。比較例には、本実施の形態のような接続部４０は設けられていない。
高温多湿の環境下において、樹脂２６の表面や、樹脂２６とプリント回路基板１０の境界から浸入した水分は、不純物を含んだ溶媒となる。このため、接地されたダイパッド１２では、水分の電離による以下の陰極反応が起こると考えられる。
Ｏ２＋２Ｈ２Ｏ＋４ｅ− → ４ＯＨ−
また、金属電極１８や素子領域２０内の配線に用いられるＡｕなどの金属材料に比べ、ＧａＡｓの方が電位的に卑である。このため、比較例の場合、正電圧を印加された金属電極１８や素子領域２０付近のＧａＡｓチップ１４表面で、以下の陽極反応が起こると考えられる。
ＧａＡｓ＋６ｈ＋ → Ｇａ３＋＋Ａｓ３＋
そして、ダイパッド１２で発生したＯＨ−は、金属電極１８付近のＧａＡｓ表面に容易に到達し、陽極反応で生成されたＧａ３＋やＡｓ３＋と反応して酸化物４２（又は水酸化物）になる。これにより、比較例では、体積膨張による素子構造の破壊や、電流リークパスの形成などの劣化現象が発生する。
一方、本実施の形態では、半絶縁性領域３８よりも外側において、ｐ型ＧａＡｓベース層３４と金属電極１８は接続部４０により電気的に接続されている。そして、正電圧が印加されたｐ型ＧａＡｓベース層３４は、溶媒との間の電位障壁は引き下げられて陽極反応が容易に進む。しかし、正電圧が印加されたｎ型ＧａＡｓエミッタ層３６は、溶媒との間の電位障壁が引き上げられて陽極反応が容易には進まない。このため、ダイパッド１２を接地し、金属電極１８に正電圧を印加した場合、ＧａＡｓチップ１４の側面のｐ型ＧａＡｓベース層３４において陽極反応、ダイパッド１２において陰極反応が起こる。このようにＧａＡｓチップ１４の側面が優先的に酸化されるため、正電圧が印加される金属電極１８や素子領域２０の周辺においてＧａＡｓチップ１４の表面が酸化されるのを防ぐことができる。よって、素子の劣化故障を抑制して、ＧａＡｓチップの耐湿性を向上させることができる。
実施の形態２．
図５は本発明の実施の形態２に係る半導体装置の内部を示す平面図である。そして、図６は図５のＢ−Ｂ´における断面図、図７は図６のチップ端部を示す拡大断面図である。実施の形態１と同じ構成要素には同じ番号を付し、説明を省略する。
半絶縁性領域３８よりも外側においてｎ型ＧａＡｓエミッタ層３６がエッチング除去され、ｐ型ＧａＡｓベース層３４上にｎ型ＧａＡｓエミッタ層３６が存在しない切り欠き部４４が形成されている。これにより、ｐ型ＧａＡｓベース層３４の露出面積が広がってｐ型ＧａＡｓベース層３４における陽極反応をより起こり易くすることができるため、ＧａＡｓチップ１４の表面が酸化されるのを更に効果的に防ぐことができる。
なお、実施の形態１，２では、陽極反応を発生させるｐ型ＧａＡｓ層として、ｎｐｎ型バイポーラトランジスタのｐ型ＧａＡｓベース層３４を用いた。これに限らず、ｎ型電界効果トランジスタの場合は、ｎ型ＧａＡｓチャネル層の下に設けたｐ型ＧａＡｓ層を用いてもよい。また、ｐｎ接合発光ダイオードやレーザーの場合は、ｐ型ＧａＡｓコンタクト層やｐ型ＧａＡｓクラッド層を用いてもよい。
本発明の実施の形態１に係る半導体装置の内部を示す平面図である。 図１のＡ−Ａ´における断面図である。 図２のチップ端部を示す拡大断面図である。 半導体装置の比較例を示す拡大断面図である。 本発明の実施の形態２に係る半導体装置の内部を示す平面図である。 図５のＢ−Ｂ´における断面図である。 図６のチップ端部を示す拡大断面図である。
符号の説明
１４ ＧａＡｓチップ
１８ 金属電極
２０ 素子領域
２６ 樹脂
３４ ｐ型ＧａＡｓベース層（ｐ型ＧａＡｓ層）
３６ ｎ型ＧａＡｓエミッタ層（ｎ型ＧａＡｓ層）
３８ 半絶縁性領域
４０ 接続部
４４ 切り欠き部

Claims (2)

  1. ＧａＡｓチップを樹脂で封止した半導体装置であって、
    前記ＧａＡｓチップは、
    ｐ型ＧａＡｓ層と、
    前記ｐ型ＧａＡｓ層上に形成されたｎ型ＧａＡｓ層と、
    前記ＧａＡｓチップの外周部において前記ｎ型ＧａＡｓ層上に形成され、正電圧が印加される金属電極と、
    前記ＧａＡｓチップの中央部に形成された素子領域と、
    前記金属電極と前記素子領域との間において前記ｐ型ＧａＡｓ層と前記ｎ型ＧａＡｓ層に形成された半絶縁性領域と、
    前記半絶縁性領域よりも外側において、前記ｐ型ＧａＡｓ層と前記金属電極とを電気的に接続する接続部とを有することを特徴とする半導体装置。
  2. 前記半絶縁性領域よりも外側において、前記ｐ型ＧａＡｓ層上に前記ｎ型ＧａＡｓ層が存在しない切り欠き部が形成されていることを特徴とする請求項１に記載の半導体装置。
JP2008179207A 2008-07-09 2008-07-09 半導体装置 Pending JP2010021274A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008179207A JP2010021274A (ja) 2008-07-09 2008-07-09 半導体装置
US12/260,494 US7719087B2 (en) 2008-07-09 2008-10-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008179207A JP2010021274A (ja) 2008-07-09 2008-07-09 半導体装置

Publications (1)

Publication Number Publication Date
JP2010021274A true JP2010021274A (ja) 2010-01-28

Family

ID=41504421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008179207A Pending JP2010021274A (ja) 2008-07-09 2008-07-09 半導体装置

Country Status (2)

Country Link
US (1) US7719087B2 (ja)
JP (1) JP2010021274A (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167432A (ja) 1984-02-10 1985-08-30 Matsushita Electronics Corp 半導体装置
JP3507828B2 (ja) * 2001-09-11 2004-03-15 シャープ株式会社 ヘテロ接合バイポーラトランジスタ及びその製造方法
KR100568567B1 (ko) * 2003-12-19 2006-04-07 한국전자통신연구원 이종 접합 쌍극자 트랜지스터 및 그 제조 방법

Also Published As

Publication number Publication date
US7719087B2 (en) 2010-05-18
US20100007003A1 (en) 2010-01-14

Similar Documents

Publication Publication Date Title
TWI414082B (zh) 具有過電壓保護之發光二極體晶片
JP2012028567A (ja) 半導体装置
JP5962522B2 (ja) 半導体レーザ装置
JP3663281B2 (ja) 半導体発光素子
JPH10242516A (ja) 窒化ガリウム系化合物半導体発光素子及びその製造方法
US20150270240A1 (en) Power semiconductor device
JP2013229547A (ja) 半導体装置および半導体モジュール
CN104934398A (zh) 电子部件和引线框架
JP2008108886A (ja) 樹脂封止半導体装置
US9685396B2 (en) Semiconductor die arrangement
JP2010021274A (ja) 半導体装置
US20100084684A1 (en) Insulated gate bipolar transistor
JP2000216442A (ja) 半導体発光装置
JP2020043200A (ja) 半導体装置
JP2002094121A (ja) 半導体発光装置
KR100747642B1 (ko) 측면 발광형 ｌｅｄ 패키지
JP2007059867A (ja) 半導体装置
JPH10117018A (ja) チップ型発光ダイオード
JP2010199149A (ja) 半導体装置
JP2005012092A (ja) 光ファイバ用ｌｅｄおよびその製造方法
JP5369396B2 (ja) 半導体装置
JP6760518B2 (ja) 半導体モジュール
KR20100101771A (ko) 발광소자 패키지 및 그 제조방법
US8729572B2 (en) Light emitting diode package having a voltage stabilizing module consisting of two doping layers
JP7412246B2 (ja) 半導体装置