JP2010016401A - 液晶表示装置用アレイ基板製造用のエッチングテープ - Google Patents
液晶表示装置用アレイ基板製造用のエッチングテープ Download PDFInfo
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- JP2010016401A JP2010016401A JP2009230824A JP2009230824A JP2010016401A JP 2010016401 A JP2010016401 A JP 2010016401A JP 2009230824 A JP2009230824 A JP 2009230824A JP 2009230824 A JP2009230824 A JP 2009230824A JP 2010016401 A JP2010016401 A JP 2010016401A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H10P50/283—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31786—Of polyester [e.g., alkyd, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31935—Ester, halide or nitrile of addition polymer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31971—Of carbohydrate
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】本発明のエッチングテープは、ベースシート及びベースシート上にゲルタイプのエッチング物質が塗布されて形成されたエッチング物質層を含む。このエッチングテープは、透明絶縁基板上にゲート電極、ストレージキャパシターの第1電極、ゲート配線を形成する段階、ゲート絶縁膜、アクティブ層、オーミック接触層、ソース電極及びドレーン電極を形成し、誘電体層及びストレージキャパシターの第2電極を形成し、データ配線を形成する段階、画素電極を形成し、ゲートパッド電極を形成し、データパッド電極を形成する段階、保護層を形成する段階及びゲートパッド電極上に形成された保護層とデータパッド電極上に形成された保護層をエッチングすることでコンタクトホールを形成する段階を含む液晶表示装置用アレイ基板の製造方法に利用される。
【選択図】図1
Description
Claims (6)
- ベースシートと、
前記ベースシート上にゲルタイプのエッチング物質が塗布されて形成されたエッチング物質層と
を含むことを特徴とする液晶表示装置用アレイ基板製造用のエッチングテープ。 - 前記エッチング物質層上に位置する保護シートをさらに含むことを特徴とする、請求項1記載のエッチングテープ。
- 前記保護シートは、PETフィルム、PVCフィルム、PEフィルムまたはPPフィルムのいずれか1つ、又はいずれか2つ以上の混合物であることを特徴とする、請求項2記載のエッチングテープ。
- 前記ベースシートは、セロハンフィルム、高分子樹脂フィルムまたはSUSフィルムのいずれか1つ、又はいずれか2つ以上の混合物であることを特徴とする、請求項1記載のエッチングテープ。
- エッチング対象の物質層が、窒化シリコンにより形成され、
前記エッチング物質は、前記窒化シリコンをエッチングすることを特徴とする、請求項1記載のエッチングテープ。 - 前記エッチング物質は、NH4FまたはKOHのいずれか1つ、又は混合物であることを特徴とする、請求項5記載のエッチングテープ。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2005-0077742 | 2005-08-24 | ||
| KR1020050077742A KR101188425B1 (ko) | 2005-08-24 | 2005-08-24 | 식각 테이프 및 이를 이용한 액정 표시 장치용 어레이기판의 제조 방법 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006164456A Division JP4422700B2 (ja) | 2005-08-24 | 2006-06-14 | エッチングテープを利用した液晶表示装置用アレイ基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010016401A true JP2010016401A (ja) | 2010-01-21 |
| JP5266181B2 JP5266181B2 (ja) | 2013-08-21 |
Family
ID=37778413
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006164456A Expired - Fee Related JP4422700B2 (ja) | 2005-08-24 | 2006-06-14 | エッチングテープを利用した液晶表示装置用アレイ基板の製造方法 |
| JP2009230824A Expired - Fee Related JP5266181B2 (ja) | 2005-08-24 | 2009-10-02 | 液晶表示装置用アレイ基板製造用のエッチングテープ |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006164456A Expired - Fee Related JP4422700B2 (ja) | 2005-08-24 | 2006-06-14 | エッチングテープを利用した液晶表示装置用アレイ基板の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7498209B2 (ja) |
| JP (2) | JP4422700B2 (ja) |
| KR (1) | KR101188425B1 (ja) |
| CN (1) | CN1920664B (ja) |
| TW (1) | TWI299909B (ja) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101188425B1 (ko) * | 2005-08-24 | 2012-10-05 | 엘지디스플레이 주식회사 | 식각 테이프 및 이를 이용한 액정 표시 장치용 어레이기판의 제조 방법 |
| US8258511B2 (en) * | 2008-07-02 | 2012-09-04 | Applied Materials, Inc. | Thin film transistors using multiple active channel layers |
| TWI395037B (zh) * | 2008-10-13 | 2013-05-01 | Prime View Int Co Ltd | 主動元件陣列基板及其檢測方法 |
| CN102832226B (zh) | 2011-10-06 | 2016-06-01 | 友达光电股份有限公司 | 主动元件阵列基板及其制造方法 |
| KR101854698B1 (ko) * | 2011-12-02 | 2018-05-08 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조방법 |
| US20150103269A1 (en) * | 2012-04-26 | 2015-04-16 | Showa Denko K.K. | Transparent conductive substrate production method, transparent conductive substrate, and electrostatic capacitance touch panel |
| CN102832254B (zh) * | 2012-09-10 | 2016-04-06 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法、显示面板 |
| CN103159409A (zh) * | 2013-03-27 | 2013-06-19 | 城步新鼎盛电子科技有限公司 | 一种用于钢化玻璃盖板蚀刻成型的保护层生成方法 |
| CN104513982B (zh) * | 2013-09-27 | 2019-01-22 | 东友精细化工有限公司 | 用于液晶显示器的阵列基板的制造方法 |
| JP7580217B2 (ja) * | 2020-07-27 | 2024-11-11 | 株式会社Screenホールディングス | 基板処理方法、基板処理装置、および、処理液 |
| JP7546399B2 (ja) | 2020-07-27 | 2024-09-06 | 株式会社Screenホールディングス | 基板処理方法、基板処理装置および処理液 |
| KR102625065B1 (ko) | 2021-06-30 | 2024-01-15 | 이성환 | Utg 식각용 고정 테이프 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840637A (ja) * | 1971-09-28 | 1973-06-14 | ||
| JPS56133478A (en) * | 1980-03-25 | 1981-10-19 | Nippon Steel Corp | Descaling method for stainless steel |
| JPS60226930A (ja) * | 1984-04-21 | 1985-11-12 | 川鉄建材工業株式会社 | 金属面処理用シ−ト |
| JPH0817789A (ja) * | 1994-04-28 | 1996-01-19 | Canon Inc | エッチング方法、半導体素子の製造方法及びそれに使用し得るエッチング処理剤 |
| JP2004143530A (ja) * | 2002-10-24 | 2004-05-20 | Ekusebun:Kk | 金属表面洗浄剤 |
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| US3664913A (en) * | 1968-05-31 | 1972-05-23 | Ralph A Ratciiff | Indicia applying article and method |
| GB1572032A (en) * | 1977-01-31 | 1980-07-23 | Hoechst Uk Ltd | Gels comprising silica and an aqueous acid |
| US4448637A (en) * | 1981-12-28 | 1984-05-15 | Daicel Chemical Industries, Ltd. | Etching method of conductive film |
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| EP1276701B1 (de) * | 2000-04-28 | 2012-12-05 | Merck Patent GmbH | Ätzpasten für anorganische oberflächen |
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-
2005
- 2005-08-24 KR KR1020050077742A patent/KR101188425B1/ko not_active Expired - Fee Related
-
2006
- 2006-06-07 TW TW95120287A patent/TWI299909B/zh not_active IP Right Cessation
- 2006-06-12 CN CN2006100915561A patent/CN1920664B/zh not_active Expired - Fee Related
- 2006-06-14 JP JP2006164456A patent/JP4422700B2/ja not_active Expired - Fee Related
- 2006-06-20 US US11/455,715 patent/US7498209B2/en not_active Expired - Fee Related
-
2009
- 2009-01-16 US US12/320,126 patent/US7923118B2/en not_active Expired - Fee Related
- 2009-10-02 JP JP2009230824A patent/JP5266181B2/ja not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840637A (ja) * | 1971-09-28 | 1973-06-14 | ||
| JPS56133478A (en) * | 1980-03-25 | 1981-10-19 | Nippon Steel Corp | Descaling method for stainless steel |
| JPS60226930A (ja) * | 1984-04-21 | 1985-11-12 | 川鉄建材工業株式会社 | 金属面処理用シ−ト |
| JPH0817789A (ja) * | 1994-04-28 | 1996-01-19 | Canon Inc | エッチング方法、半導体素子の製造方法及びそれに使用し得るエッチング処理剤 |
| JP2004143530A (ja) * | 2002-10-24 | 2004-05-20 | Ekusebun:Kk | 金属表面洗浄剤 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5266181B2 (ja) | 2013-08-21 |
| CN1920664A (zh) | 2007-02-28 |
| TW200709425A (en) | 2007-03-01 |
| US7498209B2 (en) | 2009-03-03 |
| US7923118B2 (en) | 2011-04-12 |
| TWI299909B (en) | 2008-08-11 |
| US20090136772A1 (en) | 2009-05-28 |
| US20070048911A1 (en) | 2007-03-01 |
| KR20070023297A (ko) | 2007-02-28 |
| KR101188425B1 (ko) | 2012-10-05 |
| JP4422700B2 (ja) | 2010-02-24 |
| JP2007059876A (ja) | 2007-03-08 |
| CN1920664B (zh) | 2012-07-04 |
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