JP2010016233A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010016233A5 JP2010016233A5 JP2008175720A JP2008175720A JP2010016233A5 JP 2010016233 A5 JP2010016233 A5 JP 2010016233A5 JP 2008175720 A JP2008175720 A JP 2008175720A JP 2008175720 A JP2008175720 A JP 2008175720A JP 2010016233 A5 JP2010016233 A5 JP 2010016233A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- pad region
- gas
- cover layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010410 layer Substances 0.000 claims 20
- 239000004065 semiconductor Substances 0.000 claims 18
- 238000004519 manufacturing process Methods 0.000 claims 17
- 239000007789 gas Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 8
- 239000000460 chlorine Substances 0.000 claims 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 229910052801 chlorine Inorganic materials 0.000 claims 3
- 239000011229 interlayer Substances 0.000 claims 3
- 238000001020 plasma etching Methods 0.000 claims 3
- 239000011241 protective layer Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- -1 chlorine ions Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 239000009719 polyimide resin Substances 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008175720A JP2010016233A (ja) | 2008-07-04 | 2008-07-04 | 半導体装置の製造方法 |
| KR1020090060270A KR101049383B1 (ko) | 2008-07-04 | 2009-07-02 | 반도체 장치의 제조 방법 |
| TW098122555A TW201013776A (en) | 2008-07-04 | 2009-07-03 | A manufacturing method of a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008175720A JP2010016233A (ja) | 2008-07-04 | 2008-07-04 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010016233A JP2010016233A (ja) | 2010-01-21 |
| JP2010016233A5 true JP2010016233A5 (enExample) | 2011-06-30 |
Family
ID=41702053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008175720A Withdrawn JP2010016233A (ja) | 2008-07-04 | 2008-07-04 | 半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2010016233A (enExample) |
| KR (1) | KR101049383B1 (enExample) |
| TW (1) | TW201013776A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015146023A1 (ja) * | 2014-03-25 | 2015-10-01 | 株式会社Ｊｏｌｅｄ | エッチング方法、および、これを用いた有機ｅｌ表示パネルの製造方法 |
| JP2016122801A (ja) * | 2014-12-25 | 2016-07-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| TWI794238B (zh) * | 2017-07-13 | 2023-03-01 | 荷蘭商Ａｓｍ智慧財產控股公司 | 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100805695B1 (ko) * | 2005-08-17 | 2008-02-21 | 주식회사 하이닉스반도체 | 메탈퓨즈를 구비한 반도체소자의 제조 방법 |
| KR20070105827A (ko) * | 2006-04-27 | 2007-10-31 | 주식회사 하이닉스반도체 | 리페어 퓨즈를 구비한 반도체 소자의 제조 방법 |
-
2008
- 2008-07-04 JP JP2008175720A patent/JP2010016233A/ja not_active Withdrawn
-
2009
- 2009-07-02 KR KR1020090060270A patent/KR101049383B1/ko not_active Expired - Fee Related
- 2009-07-03 TW TW098122555A patent/TW201013776A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8018023B2 (en) | Trench sidewall protection by a carbon-rich layer in a semiconductor device | |
| CN1139971C (zh) | 具有多层布线的半导体器件的制造方法 | |
| JP2009530871A5 (enExample) | ||
| JP2007019187A5 (enExample) | ||
| TWI570840B (zh) | 半導體裝置及其製造方法 | |
| KR20130143515A (ko) | 반도체 장치 및 그 제조 방법 | |
| JP2010056579A5 (enExample) | ||
| JP2009158940A5 (enExample) | ||
| JP2007110112A5 (enExample) | ||
| JP5100198B2 (ja) | 半導体素子の微細パターンの形成方法 | |
| JP2004281936A (ja) | 半導体装置の製造方法 | |
| JPWO2004097923A1 (ja) | 半導体装置の製造方法 | |
| CN101510499B (zh) | 集成电路结构的蚀刻方法 | |
| CN1126156C (zh) | 半导体器件及其制造方法 | |
| JP2007019188A5 (enExample) | ||
| JP2010016233A5 (enExample) | ||
| US20160358811A1 (en) | Interconnect structure | |
| JP2007110043A (ja) | 半導体装置の製造方法 | |
| JP2005197692A (ja) | 半導体素子のデュアルダマシンパターン形成方法 | |
| JP2016213305A5 (ja) | 半導体装置の製造方法 | |
| CN102082115A (zh) | 铝互连线结构和形成铝互连线结构的方法 | |
| JP2014078579A (ja) | 半導体装置の製造方法 | |
| JP2008300385A (ja) | 配線構造およびその製造方法 | |
| KR20120050827A (ko) | 반도체 소자의 금속 배선 형성 방법 | |
| CN100397614C (zh) | 用于在半导体装置中制造金属线的方法 |