TW201013776A - A manufacturing method of a semiconductor device - Google Patents

A manufacturing method of a semiconductor device Download PDF

Info

Publication number
TW201013776A
TW201013776A TW098122555A TW98122555A TW201013776A TW 201013776 A TW201013776 A TW 201013776A TW 098122555 A TW098122555 A TW 098122555A TW 98122555 A TW98122555 A TW 98122555A TW 201013776 A TW201013776 A TW 201013776A
Authority
TW
Taiwan
Prior art keywords
gas
semiconductor device
layer
manufacturing
wiring layer
Prior art date
Application number
TW098122555A
Other languages
English (en)
Chinese (zh)
Inventor
Masao Kunitou
Original Assignee
Nec Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corp filed Critical Nec Electronics Corp
Publication of TW201013776A publication Critical patent/TW201013776A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/701—Tape-automated bond [TAB] connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
TW098122555A 2008-07-04 2009-07-03 A manufacturing method of a semiconductor device TW201013776A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008175720A JP2010016233A (ja) 2008-07-04 2008-07-04 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW201013776A true TW201013776A (en) 2010-04-01

Family

ID=41702053

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098122555A TW201013776A (en) 2008-07-04 2009-07-03 A manufacturing method of a semiconductor device

Country Status (3)

Country Link
JP (1) JP2010016233A (enExample)
KR (1) KR101049383B1 (enExample)
TW (1) TW201013776A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI794238B (zh) * 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015146023A1 (ja) * 2014-03-25 2015-10-01 株式会社Ｊｏｌｅｄ エッチング方法、および、これを用いた有機ｅｌ表示パネルの製造方法
JP2016122801A (ja) * 2014-12-25 2016-07-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20240169867A (ko) * 2023-05-25 2024-12-03 삼성전자주식회사 반도체 소자 및 그 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100805695B1 (ko) * 2005-08-17 2008-02-21 주식회사 하이닉스반도체 메탈퓨즈를 구비한 반도체소자의 제조 방법
KR20070105827A (ko) * 2006-04-27 2007-10-31 주식회사 하이닉스반도체 리페어 퓨즈를 구비한 반도체 소자의 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI794238B (zh) * 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法

Also Published As

Publication number Publication date
KR101049383B1 (ko) 2011-07-14
KR20100004879A (ko) 2010-01-13
JP2010016233A (ja) 2010-01-21

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