JP2009545862A - ２面冷却集積化トランジスタモジュール及びその製造方法 - Google Patents

２面冷却集積化トランジスタモジュール及びその製造方法 Download PDF

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JP2009545862A
JP2009545862A JP2009511260A JP2009511260A JP2009545862A JP 2009545862 A JP2009545862 A JP 2009545862A JP 2009511260 A JP2009511260 A JP 2009511260A JP 2009511260 A JP2009511260 A JP 2009511260A JP 2009545862 A JP2009545862 A JP 2009545862A
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module
transistor
drain
pad
clip
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JP2009545862A5 (ko
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ジョナサン エー． ノキル
ルーベン ピー． マドリッド
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フェアチャイルド・セミコンダクター・コーポレーション
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Priority claimed from US11/740,475 external-priority patent/US7777315B2/en
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Dc-Dc Converters (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2009511260A 2006-05-19 2007-05-21 ２面冷却集積化トランジスタモジュール及びその製造方法 Pending JP2009545862A (ja)

Applications Claiming Priority (4)

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US80218106P 2006-05-19 2006-05-19
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WO2007137221A2 (en) 2007-11-29
DE112007001240T5 (de) 2009-04-23
CN101473423B (zh) 2011-04-13
TW200810069A (en) 2008-02-16
KR20090009882A (ko) 2009-01-23
KR101157305B1 (ko) 2012-06-15
TWI452662B (zh) 2014-09-11
WO2007137221A3 (en) 2008-10-02

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