JP2009540581A5 - - Google Patents
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- Publication number
- JP2009540581A5 JP2009540581A5 JP2009514560A JP2009514560A JP2009540581A5 JP 2009540581 A5 JP2009540581 A5 JP 2009540581A5 JP 2009514560 A JP2009514560 A JP 2009514560A JP 2009514560 A JP2009514560 A JP 2009514560A JP 2009540581 A5 JP2009540581 A5 JP 2009540581A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- corrosion inhibitor
- concentration
- scrub
- oxygen scavenger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80442506P | 2006-06-09 | 2006-06-09 | |
| US60/804,425 | 2006-06-09 | ||
| US11/760,722 | 2007-06-08 | ||
| US11/760,722 US7772128B2 (en) | 2006-06-09 | 2007-06-08 | Semiconductor system with surface modification |
| PCT/US2007/070820 WO2007146848A2 (en) | 2006-06-09 | 2007-06-09 | Surface modification of interlayer dielectric for minimizing contamination and surface degradation |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009540581A JP2009540581A (ja) | 2009-11-19 |
| JP2009540581A5 true JP2009540581A5 (enExample) | 2010-07-29 |
| JP5078997B2 JP5078997B2 (ja) | 2012-11-21 |
Family
ID=38822490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009514560A Active JP5078997B2 (ja) | 2006-06-09 | 2007-06-09 | 汚染および表面分解を最小限に抑えるための層間絶縁膜の表面改質 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US7772128B2 (enExample) |
| JP (1) | JP5078997B2 (enExample) |
| KR (1) | KR101480198B1 (enExample) |
| CN (2) | CN102522368A (enExample) |
| TW (1) | TWI360198B (enExample) |
| WO (1) | WO2007146848A2 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9058975B2 (en) | 2006-06-09 | 2015-06-16 | Lam Research Corporation | Cleaning solution formulations for substrates |
| US9691622B2 (en) | 2008-09-07 | 2017-06-27 | Lam Research Corporation | Pre-fill wafer cleaning formulation |
| US8361237B2 (en) * | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
| US9053924B2 (en) | 2008-12-26 | 2015-06-09 | Central Glass Company, Limited | Cleaning agent for silicon wafer |
| US7977235B2 (en) * | 2009-02-02 | 2011-07-12 | Tokyo Electron Limited | Method for manufacturing a semiconductor device with metal-containing cap layers |
| KR20100110123A (ko) * | 2009-04-02 | 2010-10-12 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| JP4699565B2 (ja) * | 2009-05-29 | 2011-06-15 | 三井化学株式会社 | 半導体用シール組成物、半導体装置および半導体装置の製造方法 |
| KR101770537B1 (ko) | 2009-10-23 | 2017-08-22 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 상호 접속부를 위한 자기―정렬 배리어 및 캡핑 층 |
| SG181854A1 (en) * | 2009-12-23 | 2012-07-30 | Lam Res Corp | Post deposition wafer cleaning formulation |
| CN103079816B (zh) | 2010-07-02 | 2018-01-02 | 3M创新有限公司 | 具有包封剂和光伏电池的阻挡组件 |
| KR101266620B1 (ko) | 2010-08-20 | 2013-05-22 | 다이닛뽕스크린 세이조오 가부시키가이샤 | 기판처리방법 및 기판처리장치 |
| JP6172306B2 (ja) * | 2011-01-12 | 2017-08-02 | セントラル硝子株式会社 | 保護膜形成用薬液 |
| US9059176B2 (en) | 2012-04-20 | 2015-06-16 | International Business Machines Corporation | Copper interconnect with CVD liner and metallic cap |
| TWI610806B (zh) | 2012-08-08 | 2018-01-11 | 3M新設資產公司 | 障壁膜,製造該障壁膜之方法,及包含該障壁膜之物件 |
| TWI826650B (zh) * | 2012-11-26 | 2023-12-21 | 美商應用材料股份有限公司 | 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理 |
| JP5674851B2 (ja) * | 2013-04-09 | 2015-02-25 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| US8962479B2 (en) * | 2013-05-10 | 2015-02-24 | International Business Machines Corporation | Interconnect structures containing nitrided metallic residues |
| US10283344B2 (en) | 2014-07-11 | 2019-05-07 | Applied Materials, Inc. | Supercritical carbon dioxide process for low-k thin films |
| US9349691B2 (en) * | 2014-07-24 | 2016-05-24 | International Business Machines Corporation | Semiconductor device with reduced via resistance |
| US9425087B1 (en) * | 2015-05-29 | 2016-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for forming semiconductor device structure |
| KR102189211B1 (ko) | 2015-10-04 | 2020-12-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 작은 열 질량의 가압 챔버 |
| KR102055712B1 (ko) | 2015-10-04 | 2019-12-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 감소된 용적의 처리 챔버 |
| JP6556945B2 (ja) | 2015-10-04 | 2019-08-07 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板支持とバッフルの装置 |
| KR102054605B1 (ko) | 2015-10-04 | 2019-12-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 고 종횡비 피처들을 위한 건조 프로세스 |
| US9536780B1 (en) | 2016-04-15 | 2017-01-03 | International Business Machines Corporation | Method and apparatus for single chamber treatment |
| CN108573942B (zh) | 2017-03-09 | 2021-09-14 | 联华电子股份有限公司 | 内连线结构及其制作方法 |
| US10832917B2 (en) | 2017-06-09 | 2020-11-10 | International Business Machines Corporation | Low oxygen cleaning for CMP equipment |
| US10790142B2 (en) * | 2017-11-28 | 2020-09-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selective capping processes and structures formed thereby |
| JP7531981B2 (ja) * | 2019-07-18 | 2024-08-13 | 東京エレクトロン株式会社 | 領域選択的堆積における横方向のフィルム成長を緩和するための方法 |
| KR102262250B1 (ko) | 2019-10-02 | 2021-06-09 | 세메스 주식회사 | 기판 처리 설비 및 기판 처리 방법 |
| EP4288999A4 (en) | 2021-02-08 | 2025-01-15 | MacDermid Enthone Inc. | Method and wet chemical compositions for diffusion barrier formation |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6355198B1 (en) * | 1996-03-15 | 2002-03-12 | President And Fellows Of Harvard College | Method of forming articles including waveguides via capillary micromolding and microtransfer molding |
| US6372633B1 (en) * | 1998-07-08 | 2002-04-16 | Applied Materials, Inc. | Method and apparatus for forming metal interconnects |
| US7208049B2 (en) * | 2003-10-20 | 2007-04-24 | Air Products And Chemicals, Inc. | Process solutions containing surfactants used as post-chemical mechanical planarization treatment |
| US6323128B1 (en) * | 1999-05-26 | 2001-11-27 | International Business Machines Corporation | Method for forming Co-W-P-Au films |
| TW479262B (en) * | 1999-06-09 | 2002-03-11 | Showa Denko Kk | Electrode material for capacitor and capacitor using the same |
| EP1310989B1 (en) * | 2000-06-16 | 2005-12-14 | Kao Corporation | Detergent composition |
| JP2002069495A (ja) * | 2000-06-16 | 2002-03-08 | Kao Corp | 洗浄剤組成物 |
| TW532052B (en) * | 2001-06-27 | 2003-05-11 | Ngk Spark Plug Co | Production method of a distribution substrate |
| JP3787085B2 (ja) * | 2001-12-04 | 2006-06-21 | 関東化学株式会社 | フォトレジスト残渣除去液組成物 |
| US7119418B2 (en) * | 2001-12-31 | 2006-10-10 | Advanced Technology Materials, Inc. | Supercritical fluid-assisted deposition of materials on semiconductor substrates |
| US6716771B2 (en) * | 2002-04-09 | 2004-04-06 | Intel Corporation | Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface |
| US7060330B2 (en) * | 2002-05-08 | 2006-06-13 | Applied Materials, Inc. | Method for forming ultra low k films using electron beam |
| JP4221191B2 (ja) * | 2002-05-16 | 2009-02-12 | 関東化学株式会社 | Cmp後洗浄液組成物 |
| US20040077295A1 (en) * | 2002-08-05 | 2004-04-22 | Hellring Stuart D. | Process for reducing dishing and erosion during chemical mechanical planarization |
| US7005390B2 (en) * | 2002-10-09 | 2006-02-28 | Intel Corporation | Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials |
| JP3902127B2 (ja) * | 2002-12-12 | 2007-04-04 | 株式会社荏原製作所 | めっき方法及び基板処理装置 |
| TWI324362B (en) * | 2003-01-10 | 2010-05-01 | Kanto Kagaku | Cleaning solution for semiconductor substrate |
| US7115517B2 (en) * | 2003-04-07 | 2006-10-03 | Applied Materials, Inc. | Method of fabricating a dual damascene interconnect structure |
| US6924232B2 (en) * | 2003-08-27 | 2005-08-02 | Freescale Semiconductor, Inc. | Semiconductor process and composition for forming a barrier material overlying copper |
| TWI362415B (en) * | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
| US20060003570A1 (en) * | 2003-12-02 | 2006-01-05 | Arulkumar Shanmugasundram | Method and apparatus for electroless capping with vapor drying |
| KR100795364B1 (ko) * | 2004-02-10 | 2008-01-17 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법 |
| BRPI0508291A (pt) * | 2004-03-01 | 2007-07-31 | Mallinckrodt Baker Inc | composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza |
| US7087564B2 (en) * | 2004-03-05 | 2006-08-08 | Air Liquide America, L.P. | Acidic chemistry for post-CMP cleaning |
| US7611996B2 (en) * | 2004-03-31 | 2009-11-03 | Applied Materials, Inc. | Multi-stage curing of low K nano-porous films |
| JP4456424B2 (ja) * | 2004-06-29 | 2010-04-28 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物 |
| EP1628336B1 (en) * | 2004-08-18 | 2012-01-04 | Mitsubishi Gas Chemical Company, Inc. | Cleaning liquid and cleaning method |
| US20060063382A1 (en) * | 2004-09-17 | 2006-03-23 | Dubin Valery M | Method to fabricate copper-cobalt interconnects |
| US7611588B2 (en) * | 2004-11-30 | 2009-11-03 | Ecolab Inc. | Methods and compositions for removing metal oxides |
| US20060128144A1 (en) * | 2004-12-15 | 2006-06-15 | Hyun-Mog Park | Interconnects having a recessed capping layer and methods of fabricating the same |
| US20070179072A1 (en) * | 2006-01-30 | 2007-08-02 | Rao Madhukar B | Cleaning formulations |
| JP2007291505A (ja) | 2006-03-31 | 2007-11-08 | Sanyo Chem Ind Ltd | 銅配線用洗浄剤 |
| US8404626B2 (en) * | 2007-12-21 | 2013-03-26 | Lam Research Corporation | Post-deposition cleaning methods and formulations for substrates with cap layers |
-
2007
- 2007-06-08 US US11/760,722 patent/US7772128B2/en active Active
- 2007-06-09 CN CN2011104101370A patent/CN102522368A/zh active Pending
- 2007-06-09 WO PCT/US2007/070820 patent/WO2007146848A2/en not_active Ceased
- 2007-06-09 JP JP2009514560A patent/JP5078997B2/ja active Active
- 2007-06-09 CN CN2007800213631A patent/CN101467232B/zh active Active
- 2007-06-09 KR KR20087030079A patent/KR101480198B1/ko active Active
- 2007-06-11 TW TW096121007A patent/TWI360198B/zh active
-
2008
- 2008-09-07 US US12/205,894 patent/US20090072190A1/en not_active Abandoned
-
2013
- 2013-10-04 US US14/046,555 patent/US9406556B2/en active Active
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