JP5078997B2 - 汚染および表面分解を最小限に抑えるための層間絶縁膜の表面改質 - Google Patents

汚染および表面分解を最小限に抑えるための層間絶縁膜の表面改質 Download PDF

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JP5078997B2
JP5078997B2 JP2009514560A JP2009514560A JP5078997B2 JP 5078997 B2 JP5078997 B2 JP 5078997B2 JP 2009514560 A JP2009514560 A JP 2009514560A JP 2009514560 A JP2009514560 A JP 2009514560A JP 5078997 B2 JP5078997 B2 JP 5078997B2
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layer
dielectric layer
capping
dielectric
conductor
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JP2009540581A5 (enExample
JP2009540581A (ja
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コリクス・アートゥア
リー・ナンハイ
ポリアンスカヤ・マリーナ
ワイゼ・マーク
コルネイユ・ジェイソン
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2009514560A 2006-06-09 2007-06-09 汚染および表面分解を最小限に抑えるための層間絶縁膜の表面改質 Active JP5078997B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US80442506P 2006-06-09 2006-06-09
US60/804,425 2006-06-09
US11/760,722 2007-06-08
US11/760,722 US7772128B2 (en) 2006-06-09 2007-06-08 Semiconductor system with surface modification
PCT/US2007/070820 WO2007146848A2 (en) 2006-06-09 2007-06-09 Surface modification of interlayer dielectric for minimizing contamination and surface degradation

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JP2009540581A JP2009540581A (ja) 2009-11-19
JP2009540581A5 JP2009540581A5 (enExample) 2010-07-29
JP5078997B2 true JP5078997B2 (ja) 2012-11-21

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US (3) US7772128B2 (enExample)
JP (1) JP5078997B2 (enExample)
KR (1) KR101480198B1 (enExample)
CN (2) CN102522368A (enExample)
TW (1) TWI360198B (enExample)
WO (1) WO2007146848A2 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9058975B2 (en) 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
US9691622B2 (en) 2008-09-07 2017-06-27 Lam Research Corporation Pre-fill wafer cleaning formulation
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
US9053924B2 (en) 2008-12-26 2015-06-09 Central Glass Company, Limited Cleaning agent for silicon wafer
US7977235B2 (en) * 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
KR20100110123A (ko) * 2009-04-02 2010-10-12 삼성전자주식회사 반도체 소자의 제조 방법
JP4699565B2 (ja) * 2009-05-29 2011-06-15 三井化学株式会社 半導体用シール組成物、半導体装置および半導体装置の製造方法
KR101770537B1 (ko) 2009-10-23 2017-08-22 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 상호 접속부를 위한 자기―정렬 배리어 및 캡핑 층
SG181854A1 (en) * 2009-12-23 2012-07-30 Lam Res Corp Post deposition wafer cleaning formulation
CN103079816B (zh) 2010-07-02 2018-01-02 3M创新有限公司 具有包封剂和光伏电池的阻挡组件
KR101266620B1 (ko) 2010-08-20 2013-05-22 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리방법 및 기판처리장치
JP6172306B2 (ja) * 2011-01-12 2017-08-02 セントラル硝子株式会社 保護膜形成用薬液
US9059176B2 (en) 2012-04-20 2015-06-16 International Business Machines Corporation Copper interconnect with CVD liner and metallic cap
TWI610806B (zh) 2012-08-08 2018-01-11 ３Ｍ新設資產公司 障壁膜，製造該障壁膜之方法，及包含該障壁膜之物件
TWI826650B (zh) * 2012-11-26 2023-12-21 美商應用材料股份有限公司 用於高深寬比半導體元件結構具有污染物去除之無黏附乾燥處理
JP5674851B2 (ja) * 2013-04-09 2015-02-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US8962479B2 (en) * 2013-05-10 2015-02-24 International Business Machines Corporation Interconnect structures containing nitrided metallic residues
US10283344B2 (en) 2014-07-11 2019-05-07 Applied Materials, Inc. Supercritical carbon dioxide process for low-k thin films
US9349691B2 (en) * 2014-07-24 2016-05-24 International Business Machines Corporation Semiconductor device with reduced via resistance
US9425087B1 (en) * 2015-05-29 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming semiconductor device structure
KR102189211B1 (ko) 2015-10-04 2020-12-09 어플라이드 머티어리얼스, 인코포레이티드 작은 열 질량의 가압 챔버
KR102055712B1 (ko) 2015-10-04 2019-12-13 어플라이드 머티어리얼스, 인코포레이티드 감소된 용적의 처리 챔버
JP6556945B2 (ja) 2015-10-04 2019-08-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板支持とバッフルの装置
KR102054605B1 (ko) 2015-10-04 2019-12-10 어플라이드 머티어리얼스, 인코포레이티드 고 종횡비 피처들을 위한 건조 프로세스
US9536780B1 (en) 2016-04-15 2017-01-03 International Business Machines Corporation Method and apparatus for single chamber treatment
CN108573942B (zh) 2017-03-09 2021-09-14 联华电子股份有限公司 内连线结构及其制作方法
US10832917B2 (en) 2017-06-09 2020-11-10 International Business Machines Corporation Low oxygen cleaning for CMP equipment
US10790142B2 (en) * 2017-11-28 2020-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Selective capping processes and structures formed thereby
JP7531981B2 (ja) * 2019-07-18 2024-08-13 東京エレクトロン株式会社 領域選択的堆積における横方向のフィルム成長を緩和するための方法
KR102262250B1 (ko) 2019-10-02 2021-06-09 세메스 주식회사 기판 처리 설비 및 기판 처리 방법
EP4288999A4 (en) 2021-02-08 2025-01-15 MacDermid Enthone Inc. Method and wet chemical compositions for diffusion barrier formation

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6355198B1 (en) * 1996-03-15 2002-03-12 President And Fellows Of Harvard College Method of forming articles including waveguides via capillary micromolding and microtransfer molding
US6372633B1 (en) * 1998-07-08 2002-04-16 Applied Materials, Inc. Method and apparatus for forming metal interconnects
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US6323128B1 (en) * 1999-05-26 2001-11-27 International Business Machines Corporation Method for forming Co-W-P-Au films
TW479262B (en) * 1999-06-09 2002-03-11 Showa Denko Kk Electrode material for capacitor and capacitor using the same
EP1310989B1 (en) * 2000-06-16 2005-12-14 Kao Corporation Detergent composition
JP2002069495A (ja) * 2000-06-16 2002-03-08 Kao Corp 洗浄剤組成物
TW532052B (en) * 2001-06-27 2003-05-11 Ngk Spark Plug Co Production method of a distribution substrate
JP3787085B2 (ja) * 2001-12-04 2006-06-21 関東化学株式会社 フォトレジスト残渣除去液組成物
US7119418B2 (en) * 2001-12-31 2006-10-10 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US6716771B2 (en) * 2002-04-09 2004-04-06 Intel Corporation Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface
US7060330B2 (en) * 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
JP4221191B2 (ja) * 2002-05-16 2009-02-12 関東化学株式会社 Ｃｍｐ後洗浄液組成物
US20040077295A1 (en) * 2002-08-05 2004-04-22 Hellring Stuart D. Process for reducing dishing and erosion during chemical mechanical planarization
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
JP3902127B2 (ja) * 2002-12-12 2007-04-04 株式会社荏原製作所 めっき方法及び基板処理装置
TWI324362B (en) * 2003-01-10 2010-05-01 Kanto Kagaku Cleaning solution for semiconductor substrate
US7115517B2 (en) * 2003-04-07 2006-10-03 Applied Materials, Inc. Method of fabricating a dual damascene interconnect structure
US6924232B2 (en) * 2003-08-27 2005-08-02 Freescale Semiconductor, Inc. Semiconductor process and composition for forming a barrier material overlying copper
TWI362415B (en) * 2003-10-27 2012-04-21 Wako Pure Chem Ind Ltd Novel detergent and method for cleaning
US20060003570A1 (en) * 2003-12-02 2006-01-05 Arulkumar Shanmugasundram Method and apparatus for electroless capping with vapor drying
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
BRPI0508291A (pt) * 2004-03-01 2007-07-31 Mallinckrodt Baker Inc composições e processo de limpeza para substratos nanoeletrÈnicas e microeletrÈnicas para limpeza
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
US7611996B2 (en) * 2004-03-31 2009-11-03 Applied Materials, Inc. Multi-stage curing of low K nano-porous films
JP4456424B2 (ja) * 2004-06-29 2010-04-28 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物
EP1628336B1 (en) * 2004-08-18 2012-01-04 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid and cleaning method
US20060063382A1 (en) * 2004-09-17 2006-03-23 Dubin Valery M Method to fabricate copper-cobalt interconnects
US7611588B2 (en) * 2004-11-30 2009-11-03 Ecolab Inc. Methods and compositions for removing metal oxides
US20060128144A1 (en) * 2004-12-15 2006-06-15 Hyun-Mog Park Interconnects having a recessed capping layer and methods of fabricating the same
US20070179072A1 (en) * 2006-01-30 2007-08-02 Rao Madhukar B Cleaning formulations
JP2007291505A (ja) 2006-03-31 2007-11-08 Sanyo Chem Ind Ltd 銅配線用洗浄剤
US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers

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CN101467232B (zh) 2012-02-22
US7772128B2 (en) 2010-08-10
KR101480198B1 (ko) 2015-01-07
TW200805567A (en) 2008-01-16
US20070287277A1 (en) 2007-12-13
CN102522368A (zh) 2012-06-27
TWI360198B (en) 2012-03-11
CN101467232A (zh) 2009-06-24
WO2007146848A2 (en) 2007-12-21
US20090072190A1 (en) 2009-03-19
US20140099789A1 (en) 2014-04-10
JP2009540581A (ja) 2009-11-19
WO2007146848A3 (en) 2008-03-06
KR20090017581A (ko) 2009-02-18
US9406556B2 (en) 2016-08-02

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