JP2009534834A5 - - Google Patents

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Publication number
JP2009534834A5
JP2009534834A5 JP2009506496A JP2009506496A JP2009534834A5 JP 2009534834 A5 JP2009534834 A5 JP 2009534834A5 JP 2009506496 A JP2009506496 A JP 2009506496A JP 2009506496 A JP2009506496 A JP 2009506496A JP 2009534834 A5 JP2009534834 A5 JP 2009534834A5
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JP
Japan
Prior art keywords
polishing composition
substrate
composition according
chemical mechanical
oxidizing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2009506496A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009534834A (ja
Filing date
Publication date
Priority claimed from US11/408,334 external-priority patent/US20070249167A1/en
Application filed filed Critical
Publication of JP2009534834A publication Critical patent/JP2009534834A/ja
Publication of JP2009534834A5 publication Critical patent/JP2009534834A5/ja
Withdrawn legal-status Critical Current

Links

JP2009506496A 2006-04-21 2007-03-22 銅含有基材のためのｃｍｐ法 Withdrawn JP2009534834A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/408,334 US20070249167A1 (en) 2006-04-21 2006-04-21 CMP method for copper-containing substrates
PCT/US2007/007123 WO2007126672A1 (en) 2006-04-21 2007-03-22 Cmp method for copper-containing substrates

Publications (2)

Publication Number Publication Date
JP2009534834A JP2009534834A (ja) 2009-09-24
JP2009534834A5 true JP2009534834A5 (enExample) 2010-04-08

Family

ID=38620011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009506496A Withdrawn JP2009534834A (ja) 2006-04-21 2007-03-22 銅含有基材のためのｃｍｐ法

Country Status (8)

Country Link
US (1) US20070249167A1 (enExample)
EP (1) EP2013308A4 (enExample)
JP (1) JP2009534834A (enExample)
KR (1) KR20080111149A (enExample)
CN (1) CN101437919A (enExample)
IL (1) IL194462A0 (enExample)
TW (1) TW200808946A (enExample)
WO (1) WO2007126672A1 (enExample)

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CN101451048A (zh) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 一种化学机械抛光液
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
US8247326B2 (en) * 2008-07-10 2012-08-21 Cabot Microelectronics Corporation Method of polishing nickel-phosphorous
CN101724347A (zh) * 2008-10-10 2010-06-09 安集微电子（上海）有限公司 一种化学机械抛光液
JP5533664B2 (ja) * 2008-11-10 2014-06-25 旭硝子株式会社 研磨用組成物および半導体集積回路装置の製造方法
CN102408834B (zh) * 2010-09-20 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液
JP2013077341A (ja) * 2011-09-29 2013-04-25 Alphana Technology Co Ltd 回転機器の製造方法およびその製造方法により製造される回転機器
US8999193B2 (en) * 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
CN103265893B (zh) * 2013-06-04 2015-12-09 复旦大学 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用
US10647900B2 (en) * 2013-07-11 2020-05-12 Basf Se Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors
US20200102475A1 (en) * 2018-09-28 2020-04-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mecahnical polishing composition and method of polishing silcon dioxide over silicon nitiride
CN119331517B (zh) * 2024-12-11 2025-05-27 衡阳市美润达表面处理有限公司 一种铝钛复合材料用抛光液及其制备方法

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US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
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US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6326293B1 (en) * 1997-12-19 2001-12-04 Texas Instruments Incorporated Formation of recessed polysilicon plugs using chemical-mechanical-polishing (CMP) and selective oxidation
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
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US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6599836B1 (en) * 1999-04-09 2003-07-29 Micron Technology, Inc. Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6375693B1 (en) * 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
US6436302B1 (en) * 1999-08-23 2002-08-20 Applied Materials, Inc. Post CU CMP polishing for reduced defects
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TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
JP3768402B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7012025B2 (en) * 2001-01-05 2006-03-14 Applied Materials Inc. Tantalum removal during chemical mechanical polishing
US20020104269A1 (en) * 2001-01-26 2002-08-08 Applied Materials, Inc. Photochemically enhanced chemical polish
US6638326B2 (en) * 2001-09-25 2003-10-28 Ekc Technology, Inc. Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US6726535B2 (en) * 2002-04-25 2004-04-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing localized Cu corrosion during CMP
CN1665902A (zh) * 2002-06-07 2005-09-07 昭和电工株式会社 金属抛光组合物,使用组合物进行抛光的方法以及使用抛光方法来生产晶片的方法
US7300603B2 (en) * 2003-08-05 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers

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