JP2009533863A - Cmpスラリー用補助剤 - Google Patents
Cmpスラリー用補助剤 Download PDFInfo
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- JP2009533863A JP2009533863A JP2009505298A JP2009505298A JP2009533863A JP 2009533863 A JP2009533863 A JP 2009533863A JP 2009505298 A JP2009505298 A JP 2009505298A JP 2009505298 A JP2009505298 A JP 2009505298A JP 2009533863 A JP2009533863 A JP 2009533863A
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- auxiliary agent
- polishing
- abrasive particles
- charged material
- polymer particles
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- 239000002002 slurry Substances 0.000 title claims abstract description 47
- 239000012752 auxiliary agent Substances 0.000 title claims abstract description 34
- 239000002245 particle Substances 0.000 claims abstract description 133
- 238000005498 polishing Methods 0.000 claims abstract description 81
- 229920000642 polymer Polymers 0.000 claims abstract description 55
- 239000002801 charged material Substances 0.000 claims abstract description 48
- 239000011258 core-shell material Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 12
- 239000002671 adjuvant Substances 0.000 claims description 9
- 230000002209 hydrophobic effect Effects 0.000 claims description 9
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000010556 emulsion polymerization method Methods 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 abstract description 11
- 239000000178 monomer Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- 230000008569 process Effects 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000003999 initiator Substances 0.000 description 9
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- -1 vinyl halide Chemical class 0.000 description 7
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- 150000001450 anions Chemical class 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
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- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 125000000129 anionic group Chemical group 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 150000004996 alkyl benzenes Chemical class 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 238000007720 emulsion polymerization reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical class [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 1
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2,2'-azo-bis-isobutyronitrile Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical class O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- WYGWHHGCAGTUCH-UHFFFAOYSA-N 2-[(2-cyano-4-methylpentan-2-yl)diazenyl]-2,4-dimethylpentanenitrile Chemical compound CC(C)CC(C)(C#N)N=NC(C)(C#N)CC(C)C WYGWHHGCAGTUCH-UHFFFAOYSA-N 0.000 description 1
- IEVADDDOVGMCSI-UHFFFAOYSA-N 2-hydroxybutyl 2-methylprop-2-enoate Chemical compound CCC(O)COC(=O)C(C)=C IEVADDDOVGMCSI-UHFFFAOYSA-N 0.000 description 1
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- GNSFRPWPOGYVLO-UHFFFAOYSA-N 3-hydroxypropyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCO GNSFRPWPOGYVLO-UHFFFAOYSA-N 0.000 description 1
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical class CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical class C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 238000001016 Ostwald ripening Methods 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical class OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 description 1
- 150000003926 acrylamides Chemical class 0.000 description 1
- 150000001253 acrylic acids Chemical class 0.000 description 1
- 150000008360 acrylonitriles Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000012874 anionic emulsifier Substances 0.000 description 1
- 229920006318 anionic polymer Polymers 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 229910052751 metal Chemical class 0.000 description 1
- 239000002184 metal Chemical class 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003204 osmotic effect Effects 0.000 description 1
- 238000001139 pH measurement Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000012066 reaction slurry Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920002545 silicone oil Chemical class 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- RYYKJJJTJZKILX-UHFFFAOYSA-M sodium octadecanoate Chemical compound [Na+].CCCCCCCCCCCCCCCCCC([O-])=O RYYKJJJTJZKILX-UHFFFAOYSA-M 0.000 description 1
- SLBXZQMMERXQAL-UHFFFAOYSA-M sodium;1-dodecoxy-4-hydroxy-1,4-dioxobutane-2-sulfonate Chemical compound [Na+].CCCCCCCCCCCCOC(=O)C(S(O)(=O)=O)CC([O-])=O SLBXZQMMERXQAL-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical class [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/346—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties utilised during polishing, or grinding operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
表面に(−)電荷を帯びる高分子の粒度が10nm未満と小さすぎる場合は、陽電荷を帯びた材料からなる構造物にまばらに吸着し、又は、薄肉の被覆層に吸着し、陽電荷を帯びた材料からなる構造物を研磨から確実に保護することができなくなる。
前記乳化剤の含量は、主モノマー100重量部に対して0.05〜20重量部であることが好ましい。
研磨粒子の平均粒度は、50nm〜500nmの範囲であることが好ましい。
また、本発明は、前記CMPスラリーが適用されるSTI方法を提供する。
(1)コア−シェル構造の高分子粒子の製造
疎水性モノマーとしてスチレン100重量部、親水性陰電荷モノマーとしてアクリル酸5重量部、開始剤V65(2,2’−アゾビス(2,4−ジメチルバレロニトリル))0.05重量部及び強疎水剤としてヘキサデカン4.0重量部を混合した後、ラウリル硫酸ナトリウム10重量部を脱イオン水300重量部に溶解させた水溶液に混合した。次に、超音波粉砕機で5分間処理してミニエマルジョンを作った後、これを回分反応機で徐々に攪拌しながら60〜90℃で5時間加熱して重合させた。
このようにして得られた高分子粒子を遠心分離機MEGA17R(ハンイル科学産業(株)製、韓国)を用いて17000rpmで二時間遠心分離し、沈殿したものを水に再度分散させた。前記遠心分離−再分散の過程を3回繰り返した後、乳化剤の除去されたコア−シェル構造の高分子粒子溶液が得られた。製造された高分子粒子の平均粒度は、50nmであった。
(2)CMPスラリー用の高選択度補助剤の製造
前記製造された高分子粒子溶液が3重量%になるように水を加えて希釈した後、さらに水酸化アンモニウムを加えてpHを7.1に調節して最終のCMPスラリー用補助剤を製造した。
(3)CMPスラリーの製造
研磨粒子組成物として5重量%の酸化セリウムスラリー組成物HS8005HX(日立化成製)、上記で製造したCMPスラリー用補助剤及び水を1:3:3の体積比で混合してCMPスラリーを製造した。使用した研磨粒子の平均粒度は、250nm程度であった。
研磨粒子組成物として5重量%の酸化セリウムスラリー組成物HS8005HX(日立化成製)及び水を1:6の体積比で混合してCMPスラリーを製造した。
(比較例2)
(CMPスラリー用補助剤の製造)
前記実施例1で製造したコア−シェル構造の高分子粒子溶液の代わりに、線状の陰イオン性高分子物質を主成分としたHS8102GP(日立化成製)を使用したことを除いては、前記実施例1と同様にして最終のCMPスラリー用補助剤を製造した。
(CMPスラリーの製造)
研磨粒子組成物として5重量%の酸化セリウムスラリー組成物HS8005HX(日立化成製)、上記で製造したCMPスラリー用補助剤及び水を1:3:3の体積比で混合したCMPスラリーを製造した。
前記実施例1、前記比較例1、2で製造したCMPスラリーを用い、下記の方法でpH、イオン伝導度(mS)、平均凝集粒度(nm)、酸化膜研磨率(Å/分)、窒化膜研磨率(Å/分)及び選択度を測定し、その結果を下記の表1に示した。
イ) pH−pH測定用装備(コーニングpHメーター445)を用いて測定した。
ロ) 平均凝集粒度−光散乱装置Microtrap UPA150(米国ハネウェル社製)を用いて測定した。
ハ) 酸化膜研磨率−研磨機POLI400(GNPテクノロジ社製)を用いて研磨し、酸化膜の初期及び研磨後の厚さをNanospec6100(ナノメトリクス社製)で測定して研磨率を測定した。
ニ) 窒化膜研磨率−研磨機POLI400(GNPテクノロジ社製)を用いて研磨し、窒化膜の初期及び研磨後の厚さをNanospec6100(ナノメトリクス社製)で測定して研磨率を測定した。
ホ) 選択度−酸化膜の研磨率を窒化膜の研磨率で割って求めた。
ヘ) 厚さ偏差−酸化膜の研磨速度の標準偏差を平均研磨速度で割って求めた。
Claims (18)
- 研磨粒子を使用して陽電荷を帯びた材料からなる構造物と陰電荷を帯びた材料からなる構造物とを同時に研磨する際に、陽電荷を帯びた材料からなる構造物に吸着して陽電荷を帯びた材料からなる構造物の研磨を抑制することによって陰電荷を帯びた材料からなる構造物に対する研磨選択度を高める補助剤であって、表面に(−)電荷を帯び、且つ研磨時に一緒に使用される研磨粒子より小さなナノサイズを有するコア−シェル構造の高分子粒子を含有することを特徴とする補助剤。
- 前記高分子粒子は、研磨時に一緒に使用される研磨粒子と静電気力で結合されないことを特徴とする請求項1に記載の補助剤。
- 前記高分子粒子の表面電位範囲は、−25mV以下であることを特徴とする請求項1に記載の補助剤。
- 前記高分子粒子は、研磨粒子とゼータ電位が同符号であることを特徴とする請求項2に記載の補助剤。
- 高分子粒子の平均粒度が10〜100nmであることを特徴とする請求項1に記載の補助剤。
- CMPスラリーに使用されることを特徴とする請求項1に記載の補助剤。
- コア−シェル構造の高分子粒子は、コアが疎水性であり、シェルが親水性であることを特徴とする請求項1に記載の補助剤。
- 高分子粒子は、球状であることを特徴とする請求項1に記載の補助剤。
- 高分子粒子は、カルボキシル基(−COOH)、スルホン酸基または水酸基(−OH)によって表面に(−)電荷を帯びることを特徴とする請求項1に記載の補助剤。
- 高分子粒子は、 ミニエマルジョン重合法で製造されることを特徴とする請求項1に記載の補助剤。
- 前記表面に(−)電荷を帯びる高分子粒子は、塩基性物質と一緒に塩を形成することを特徴とする請求項1に記載の補助剤。
- pHが4.5〜8.8であることを特徴とする請求項1に記載の補助剤。
- (a)請求項1〜12のいずれか一つに記載の補助剤、
(b)研磨粒子、及び
(c)水
を含み、前記補助剤と研磨粒子とは、静電気力で結合されないことを特徴とするCMPスラリー。 - 補助剤0.1〜10重量%、研磨粒子0.1〜10重量%を含有し、更に組成物の総重量が100重量%になる残量の水を含有することを特徴とする請求項13に記載のCMPスラリー。
- 研磨粒子の平均粒度は、50nm〜500nmであることを特徴とする請求項13に記載のCMPスラリー。
- 研磨粒子は、シリカ、酸化ジルコニウム、酸化チタン、酸化セリウムからなる群から選択される少なくとも1つであることを特徴とする請求項13に記載のCMPスラリー。
- 請求項13に記載のCMPスラリーを使用するSTI法。
- 研磨粒子を使用して研磨する際に、表面に(−)電荷を帯び、且つ研磨粒子より小さなナノサイズを有し、研磨粒子と静電気力で結合されないコア−シェル構造の高分子粒子を使用することで、陽電荷を帯びた材料からなる構造物の研磨を抑制する方法。
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PCT/KR2007/001777 WO2007119965A1 (en) | 2006-04-14 | 2007-04-12 | Adjuvant for cmp slurry |
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